• 제목/요약/키워드: carbide analysis

검색결과 332건 처리시간 0.027초

TDS analysis of graphite divertor tiles

  • 이상균;임종연;최상철;서인용;신용현;홍승수;정광화;임기학
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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    • pp.41-41
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    • 1999
  • 핵융합 장치의 플라즈마 운행동안 토카막 내벽에 도달하는 온도는 최저 $600^{\circ}C$ 이상이다. 또한 플라즈마 자체와 사용자(User)들의 시료로부터 방출되는 입자들에 의한 내벽 충격(damage)은 장기간의 안정적인 운행 및 연구에 심각한 영향을 미친다. 이러한 이유로 토카막 제작시 내벽 보호재의 선정은 매우 높은 비중을 차지한다. Graphite는 높은 융점과 가공의 용이성으로 토카막 내벽의 보호재로 선호되는 물질이다. 그러나 토카막 용기(vessel)에 사용되는 스테인레스 스틸(AISI 316LN)보다 약 50배 이상의 기체 방출율(outgassing rate)을 가진다. 그러므로 장착 이전의 초기 청정화 과정이 매우 중요하며, 특히 400m2의 약 2톤(2000kg)의 graphite가 사용되므로 대량 처리를 할 수 있는 방법의 선정도 함께 개발되어야 한다. 본 연구팀에서는 처음 10개 회사의 시제품을 검토한 후, 최종 2개 회사의 4가지 종류의 시료를 선정하였다. 선정된 시료는 Union Carbide의 ATJ와 Toyo Tanso의 IG-110, IG-43, Ig-430이다. 시료는 비절삭유(oil-free) 가공에 의해 80$\times$2$\times$3 (mm)의 크기로 제작되었고 에탄올과 메탄올 용액에서 초음파 세척되었다. 건조된 시료는 TDS(Thermal Desorption Spectroscopy) 장치에 장착되어 세 단계의 실험을 하였다. 처음은 승온(상온 ~100$0^{\circ}C$)에 의한 방출 기체의 성분 분석, 두 번째는 장기간 (2주) 대기 노출 후 주요 방출 기체의 온도에 따른 변화, 마지막으로는 특정 기체에서의 장기간 보관후, 주요 방출 기체의 온도에 따른 변화를 조사하였다. 다음 그림 1은 본 연구에서 사용된 TDS 장치의 개략도이고 그림 2는 TDS 장치에 장착 직 후와 대기 중 노출된 시료들의 온도증가에 따른 총 압력의 변화이다.

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Mo가 고크롬주철의 조직 및 경도에 미치는 영향 (Effects of Mo on the Microstructure and Hardness in High Chromium Cast Irons)

  • 류성곤
    • 한국주조공학회지
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    • 제16권2호
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    • pp.141-148
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    • 1996
  • In high chromium cast iron, the control of matrix microstructure as well as carbide structure is important to the performance as a wear resistant material. In this study, 3.0% C-24.0% Cr white cast irons with various molybdenum contents(residual, 1.0%, 3.0% and 5.0%) were solidified conventionally and unidirectionally for studying their effects on the microstructure and hardness. In the conventional casting, two sets of castings were poured from each melt. One set of the castings consisted of cylindrical bars of 10 and 20mm by 155mm long. The second set of the castings was a cylindrical bar of 30mm by 200mm long. On the other hand, a pep-set mold set on the Cu plate was employed to make the solidification unidirectionally. X-ray diffraction method was used to observe retained austenite and carbides in the high chromium cast iron. The morphology of eutectic $M_7C_3$ carbides changed from needle-like type to nodular type with the increase of Mo content. And, the presence of $M_2C$ carbides was identified in the sample where Mo was added over 3.0 %. Primary and eutectic carbides appeared as rod type and corngrain type, respectively in the unidirectionally solidified samples which were cut to parallel to the solidification direction. In the EDX analysis, Cr concentration was higher in the primary and eutectic $M_7C_3$ carbides, Mo in the $M_2C$ carbides, and Fe in the matrix.

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Pt/Si/Ti P형 4H-SiC 오옴성 접합에서 낮은 접촉 저항에 관한 연구 (Low resistivity ohmic Pt/Si/Ti contacts to p-type 4H-SiC)

  • 양성준;이주헌;노일호;김창교;조남인;정경화;김은동;김남균
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.521-524
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    • 2001
  • In this letter. we report on the investigation of Ti. Pt/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at $500^{\circ}C$ for 1h. $950^{\circ}C$ for 10 min respectively. The contact resistances were measured using the transmission line model method. which resulted in specific contact resistivities in the $3.5{\times}10^{-3}$ and $6.2{\times}10^{-4}ohm/cm^{2}$, and the physical properties of the contacts were examined using x-ray diffraction. microscopy. AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature, there was a intermixing of the Ti and Si. migration of into SiC. Overlayer of Pt had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.

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배터리 에너지 저장장치용 고효율 2kW급 양방향 DC-DC 컨버터 설계 (Design of a 2kW Bidirectional Synchronous DC-DC Converter for Battery Energy Storage System)

  • 이태영;조병극;조영훈;홍찬욱;이한솔;조관열
    • 전력전자학회논문지
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    • 제22권4호
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    • pp.312-323
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    • 2017
  • This paper introduces the bidirectional dc-dc converter design case study, which employs silicon-carbide (SiC) MOSFETs for battery energy storage system (BESS). This converter topology is selected as bidirectional synchronous buck converter, which is composed of a half bridge converter, an inductor, and a capacitor, where the converter has less conduction loss than that of a unidirectional buck and boost converter, and to improve the converter efficiency, both the power stage design and power conversion architecture are described in detail. The conduction and switching losses are compared among three different SiC devices in this paper. In addition, the thermal analysis using Maxwell software of each switching device supports the loss analyses, in which both the 2 kW prototype analyses and experimental results show very good agreement.

Shield Material Consideration in the LAR Tokamak Reactor

  • Hong, B.G.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.314-314
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    • 2010
  • For the optimal design of a tokamak-type reactor, self-consistent determination of a radial build of reactor systems is important and the radial build has to be determined by considering the plasma physics and engineering constraints which inter-relate various reactor systems. In a low aspect ratio (LAR) tokamak reactor with a superconducting toroidal field (TF) coil, the shield should provide sufficient protection for the superconducting TF coil and the shield plays a key role in determining the size of a reactor. To determine the radial build of a reactor, neutronic effects such as tritium breeding in the blanket, nuclear heating, and radiation damage to toroidal field (TF) coil has to be included in the systems analysis. In this work, the outboard blanket only is considered where tritium self-sufficiency is possible by using an inboard neutron reflector instead of breeding blanket. The reflecting shield should provide not only protection for the superconducting TF coil but also improved neutron economy for the tritium breeding in outboard blanket. Tungsten carbide, metal hydride such as titanium hydride and zirconium hydride can be used for improved shielding performance and thus smaller shield thickness. With the use of advanced technology in the shield, conceptual design of a compact superconducting LAR reactor with aspect ratio of less than 2 will be presented as a viable power plant.

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응답표면법에 의한 알루미늄합금의 가공면 거칠기에 관한 연구 (A Study on the Surface Roughness of Aluminum Alloy by Response Surface Nethod)

  • 구자성;김원일;이윤경;왕덕현;박지호
    • 한국산업융합학회 논문집
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    • 제8권1호
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    • pp.31-36
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    • 2005
  • The purpose of this experimental study is to gain equations for the prediction of surface roughness depending on the three major parameters(the cutting speed, the feed rate and the nose radius). It is the merit of Response Surface Methodology that the test time is reduced to minimum size and accurate analysis can be done. On this study, first, made specimen, Al 5052 BE material which is widely used in school and cut the specimen with coated tungsten carbide tools, by varying the cutting conditions, such as the cutting speed, the feed rate and the nose radius. In conclusion, the surface roughness was most greatly influenced by the feed rate. And Surface Roughness equation gained by experiment is as followed $$R=58.2\;v^{-0.22}f^{1.7}r^{-0.66}$$.

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RF 스퍼터링으로 증착된 하이드록시아파타이트 박막의 ESCA 분석 (The ESCA Analysis of Hydroxyapatite Thin Films Deposited by RF Sputtering)

  • 정찬회;이준희;김순국;김명한;유재근;김승언
    • 한국재료학회지
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    • 제16권4호
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    • pp.264-271
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    • 2006
  • RF sputtering process was applied to produce thin hydroxyapatite(HAp) films on Ti-6Al-4V alloy substrates. The effects of different heat treatment conditions on the chemical composites between HAp thin films and Ti-6Al-4V alloy substrates were studied. After deposition, the HAp thin films were heat treated for 1h at $400^{\circ}C,\;600^{\circ}C\;and\;800^{\circ}C$ under the atmosphere, and analyzed O/M, FESEM-EDX and ESCA, respectively. Experimental results represented that interface of HAp thin films and Ti-6Al-4V alloy substrates was composed Ti-OH, TiO, TiN, $Al_2O_3,\;V_2O_3,\;VO_2$. pyrophosphate and decreased carbide followed by the increase of heat treatment temperature.

HMDS 단일 전구체를 이용한 다결정 3C-SiC 박막 성장 (Growth of Polycrystalline 3C-SiC Thin Films using HMDS Single Precursor)

  • 정귀상;김강산;한기봉
    • 한국전기전자재료학회논문지
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    • 제20권2호
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    • pp.156-161
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    • 2007
  • This paper describes the characteristics of polycrystalline ${\beta}$ or 3C (cubic)-SiC (silicon carbide) thin films heteroepitaxailly grown on Si wafers with thermal oxide. In this work, the poly 3C-SiC film was deposited by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane: $Si_{2}(CH_{3}_{6})$ single precursor. The deposition was performed under various conditions to determine the optimized growth conditions. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_{2}$ were measured by SEM (scanning electron microscope). Finally, depth profiling was invesigated by GDS (glow discharge spectrometer) for component ratios analysis of Si and C according to the grown 3C-SiC film thickness. From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror and low defect. Therfore, the poly 3C-SiC thin film is suitable for extreme environment, Bio and RF MEMS applications in conjunction with Si micromaching.

MTS를 사용한 LPCVD 법에 의한 (100)Si 위의 $\beta$-SiC 증착 및 계면특성 (Interfacial Characteristics of $\beta$-SiC Film Growth on (100) Si by LPCVD Using MTS)

  • 최두진;김준우
    • 한국세라믹학회지
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    • 제34권8호
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    • pp.825-833
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    • 1997
  • Silicon carbide films were deposited by low pressure chemical vapor deposition(LPCVD) using MTS(CH3SICl3) in hydrogen atmosphere on (100) Si substrate. To prevent the unstable interface from being formed on the substrate, the experiments were performed through three deposition processes which were the deposition on 1) as received Si, 2) low temperature grown SiC, and 3) carbonized Si by C2H2. The microstructure of the interface between Si substrates and SiC films was observed by SEM and the adhesion between Si substrates and SiC films was measured through scratch test. The SiC films deposited on the low temperature grown SiC thin films, showed the stable interfacial structures. The interface of the SiC films deposited on carbonized Si, however, was more stable and showed better adhesion than the others. In the case of the low temperature growth process, the optimum condition was 120$0^{\circ}C$ on carbonized Si by 3% C2H2, at 105$0^{\circ}C$, 5 torr, 10 min, showed the most stable interface. As a result of XRD analysis, it was observed that the preferred orientation of (200) plane was increased with Si carbonization. On the basis of the experimental results, the models of defect formation in the process of each deposition were compared.

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공구재종에 따른 엔드밀 가공의 절삭력에 관한 통계적해석 (Statistical Analysis of Cutting Force for End Milling with Different Cutting Tool Materials)

  • 최만성
    • 반도체디스플레이기술학회지
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    • 제15권4호
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    • pp.86-91
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    • 2016
  • End milling is an important and common machining operation because of its versatility and capability to produce various profiles and curved surfaces. This paper presents an experimental study of the cutting force variations in the end milling of SM25C with HSS(high speed steel) and carbide tool. This paper involves a study of the Taguchi design application to optimize cutting force in a end milling operation. The Taguchi design is an efficient and effective experimental method in which a response variable can be optimized, given various control and noise factors, using fewer resources than a factorial design. This study included feed rate, spindle speed and depth of cut as control factors, and the noise factors were different cutting tool in the same specification. An orthogonal array of $L_9(3^3)$ of ANOVA analyses were carried out to identify the significant factors affecting cutting force, and the optimal cutting combination was determined by seeking the best cutting force and signal-to-noise ratio. Finally, confirmation tests verified that the Taguchi design was successful in optimizing end milling parameters for cutting force.