• Transactions on Electrical and Electronic Materials
• /
• v.18 no.4
• /
• pp.199-202
• /
• 2017

Silicon carbide (SiC) is being spotlighted as a next-generation power semiconductor material owing to the characteristic limitations of the existing silicon materials. SiC has a wider band gap, higher breakdown voltage, higher thermal conductivity, and higher saturation electron mobility than those of Si. When using this material to implement Schottky barrier diode (SBD) devices, SBD-state operation loss and switching loss can be greatly reduced as compared to that of traditional Si. However, actual SiC SBDs exhibit a lower dielectric breakdown voltage than the theoretical breakdown voltage that causes the electric field concentration, a phenomenon that occurs on the edge of the contact surface as in conventional power semiconductor devices. Therefore in order to obtain a high breakdown voltage, it is necessary to distribute the electric field concentration using the edge termination structure. In this paper, we designed an edge termination structure using a field plate structure through oxide etch angle control, and optimized the structure to obtain a high breakdown voltage. We designed the edge termination structure for a 650 V breakdown voltage using Sentaurus Workbench provided by IDEC. We conducted field plate experiments. under the following conditions: $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, $60^{\circ}$, and $75^{\circ}$. The experimental results indicated that the oxide etch angle was $45^{\circ}$ when the breakdown voltage characteristics of the SiC SBD were optimized and a breakdown voltage of 681 V was obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.167-171
• /
• 2003

We report the material and electrical properties of $CoSi_2$ and $NiSi_2$contacts to n-type 4H-SiC depending on the post-annealing and the metal covering conditions. The Ni and Co silicides are deposited by RF sputtering with Ni/Si/Ni and Co/Si/Co films separately deposited on 4H-SiC substrates. The deposited films are annealed at $800\;^{\circ}C$ in $Ar:H_2$ (9:1) gas ambient. Results of the specific surface resistivity measurements show that the resistivity of the Co-based metal contact was the one order lower than that of the Ni-based contact. The specific contact resistance was measured by a transmission line technique, and the specific contact resistivity of $1.5{\times}10^{-6}\;{\Omega}\;cm^2$ is obtained for Co/Si/Co metal structures after a two-step annealing; at $550\;^{\circ}C$ for 10 min and $800\;^{\circ}C$ for 3min. The physical properties of the contacts were examined by using XRD and AES, and the results indicate that the Co-based metal contacts have better structural stability of silicide phases formed after the high temperature annealing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.7
• /
• pp.513-516
• /
• 2010

In this work, a study is presented of the static characteristics of 4H-SiC DMOSFETs obtained by adjustment of the p-base region. The structure of this MOSFET was designed by the use of a device simulator (ATLAS, Silvaco.). The static characteristics of SiC DMOSFETs such as the blocking voltages, threshold voltages, on-resistances, and figures of merit were obtained as a function of variations in p-base doping concentration from $1\;{\times}\;10^{17}\;cm^{-3}$ to $5\;{\times}\;10^{17}\;cm^{-3}$ and doping depth from $0.5\;{\mu}m$ to $1.0\;{\mu}m$. It was found that the doping concentration and the depth of P-base region have a close relation with the blocking and threshold voltages. For that reason, silicon carbide DMOSFET structures with highly intensified blocking voltages with good figures of merit can be achieved by adjustment of the p-base depth and doping concentration.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.80-80
• /
• 2000

Surface acoustic wave (SAW) devices have become more important as mobile telecommunication systems need h호-frrequency, low-loss, and down-sized components. Higher-frequency SAW divices can be more sasily realized by developing new h호-SAW-velocity materials. The ZnO/diamond/Si multilasyer structure is one of the most promising material components for GHz-band SAW filters because of its SAW velocity above 10,000 m/sec. Silicon carbide is also a potential candidate material for high frequency, high power and radiation resistive electronic devices due to its superior mechanical, thermal and electronic properties. However, high price of commercialized 6- or 4H-SiC single crystalline wafer is an obstacle to apply SiC to high frequency SAW devices. In this study, single crystalline 3C-SiC thin films were grown on Si (100) by MOCVD using bis-trimethylsilymethane (BTMSM, C7H20Si7) organosilicon precursor. The 3C-SiC film properties were investigated using SEM, TEM, and high resolution XRD. The FWHM of 3C-SiC (200) peak was obtained 0.37 degree. To investigate the SAW propagation characteristics of the 3C-SiC films, SAW filters were fabricated using interdigital transducer electrodes on the top of ZnO/3C-SiC/Si(100), which were used to excite surface acoustic waves. SAW velocities were calculated from the frequency-response measurements of SAW filters. A generalized SAW mode. The hard 3C-SiC thin films stiffened Si substrate so that the velocities of fundamental and the 1st mode increased up to 5,100 m/s and 9,140 m/s, respectively.

• Korean Journal of Materials Research
• /
• v.21 no.11
• /
• pp.596-603
• /
• 2011

The very high temperature gas reactor (VHTR) is one of the next generation nuclear reactors for its safety, long-term stability, and proliferation-resistance. The high operating temperature of over 800$^{\circ}C$ enables various applications with high energy efficiency. Heat is transferred from the primary helium loop to the secondary helium loop through the intermediate heat exchanger (IHX). The IHX material requires creep resistance, oxidation resistance, and corrosion resistance in a helium environment at high operating temperatures. A Ni-based superalloy such as Alloy 617 is considered as a primary candidate material for the intermediate heat exchanger. In this study, the microstructures of Alloy 617 crept in pure helium and air environments at 950$^{\circ}C$ were observed. The rupture time in helium was shorter than that in air under small applied stresses. As the exposure time increased, the thickness of outer oxide layer of the specimens clearly increased but delaminated after a long creep time. The depth of the carbide-depleted zone was rather high in the specimens under high applied stress. The reason was elucidated by the comparison between the ruptured region and grip region of the samples. It is considered that decarburization caused by minor gas impurities in a helium environment caused the reduction in creep rupture time.

• Korean Journal of Materials Research
• /
• v.18 no.10
• /
• pp.558-563
• /
• 2008

TiAlN films were deposited on WC-5Co substrates with different buffer layers by D.C. magnetron sputtering. The films were evaluated by microstructural observations and measuring of preferred orientation, hardness value, and adhesion force. As a process variable, various buffer layers were used such as TiAlN single layer, TiAlN/TiAl, TiAlN/TiN and TiAlN/CrN. TiAlN coating layer showed columnar structures which grew up at a right angle to the substrates. The thickness of the TiAlN coating layer was about $1.8{\mu}m$, which was formed for 200 minutes at $300^{\circ}$. XRD analysis showed that the preferred orientation of TiAlN layer with TiN buffer layer was (111) and (200), and the specimens of TiAlN/TiAl, TiAlN/CrN, TiAlN single layer have preferred orientation of (111), respectively. TiAlN single layer and TiAlN/TiAl showed good adhesion properties, showing an over 80N adhesion force, while TiAlN/TiN film showed approximately 13N and the TiAlN/CrN was the worst case, in which the layer was destroyed because of high internal residual stress. The value of micro vickers hardness of the TiAlN single layer, TiAlN/TiAl and TiAlN/TiN layers were 2711, 2548 and 2461 Hv, respectively.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2005.10a
• /
• pp.362-365
• /
• 2005

Currently Chemical Mechanical Planarization (CMP) has become an essential step in the overall semiconductor wafer fabrication technology. Especially the CMP pad conditioner, one of the diamond tools, is required to have strong diamond retention. Strong cohesion between diamond grits and metal matrix prevents macro scratch on the wafer. If diamond retention is weak, the diamond will be pulled out of metal matrix. The pulled diamond grits are causative of macro scratch on wafer during CMP process. Firstly, some results will be reported of cohesion between diamond grits and metal matrix on the diamond tools prepared by three different manufacturing methods. A measuring instrument with sharp cemented carbide connected with a push-pull gauge was manufactured to measure the cohesion between diamond grits and metal matrix. The retention force of brazed diamond tool was stronger than the others. The retention force was also increased in proportion to the contact area of diamond grits and metal matrix. The brazed diamond tool has a strong chemical combination of the interlayer composed of chrome in metal matrix and carbon which enhance the interfacial cohesion strength between diamond grits and metal matrix. Secondly, we measured real-time data of the coefficient of friction and the pad wear rate by using CMP tester (CETR, CP-4). CMP pad conditioner samples were manufactured by brazed, electro-plated and sintered methods. The coefficient of friction and the pad wear rate were shown differently according to the arranged diamond patterns. Consequently, the coefficient of friction is increased according as the space between diamonds is increased or the concentration of diamonds is decreased. The pad wear rate is increased according as the degree of diamond protrusion is increased.

• Journal of the Korean Society for Nondestructive Testing
• /
• v.22 no.1
• /
• pp.65-73
• /
• 2002

Artificial aging was performed to simulate the microstructural degradation in 2.25Cr-1Mo steel arising from long time exposure at $540^{\circ}C$. Microstructural analysis (mean equivalent size, number of carbides per unit area) and measurement of mechanical properties(UTS, Vickers hardness) and magnetic properties(coercivity, remanence) were performed. By comparing these results, the relationship between magnetic properties and microstructural changes with artificial aging was clarified. The carbides were classified as rod, globular and acicular type in terms of morphology. The fine acicular carbides were found to diminish drastically in the initial stage of aging. The magnetic coercivity and remanence were observed to decrease rapidly in the initial about 920 hours of aging time and then decrease slowly afterwards. Linear correlations between the mechanical properties and magnetic properties such as correlations remanence were found.

• Journal of the Korean Society for Heat Treatment
• /
• v.6 no.3
• /
• pp.166-177
• /
• 1993

Bending fatigue strength tests were made for VC coated die steels which were coated by immersing in a molten borax bath and for hardened die steels which were quenched and tempered, in order to clarify the effect of VC coating at $1000^{\circ}C$ and $1025^{\circ}C$. The material used in this investigation was a representative cold and hot die steels STD11, STD61. The results obtained are as follows. 1) The endurance limit of VC coated die steels was a little lower than that of hardened die steels. It is considered to be mainly due to the decfl.lase of hardness in the substrates. Accordingly, the endurance limit reo covered almost to the level of hardened die steels by an additional diffusion treatment. 2) The initiation point of fatigue fracture of VC coated die steels in reversed bening was on the substrate just under the VC layer. Hence, the endurance limit is corrected to the hardness of this part. 3) But, there is a considerable scatter in this relationship and the endurance limit of VC coated die steels was a little lower than that of hardened die steels with equal hardness. These results suggest that the fatigue strength of VC coated die steels is determined not only by the hardness but also by other factors. For example. the residual stress in the substrate just under VC coating layer is one of the factors besides hardness which is mainly related to the retained austenite(${\gamma}_R$).

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.15 no.5
• /
• pp.2628-2634
• /
• 2014

Vehicle washer heater system is more widely adopted to defrost a window or to clear the windshield glass in winter season. The washer heater system should be designed to heat up washer fluid rapidly to the target temperature for only a short time. A numerical analysis has been carried out to analyze the heat transfer characteristics with materials of inside parts in vehicle washer heater system with filler and flow path. ANSYS - FLUENT software is employed for the analysis. The axial symmetry model is three-dimensional and unsteady. It applies to the coupled method which is one of pressure based. Through this result, it was obtained to find the optimal material condition for the filler and flow path in washer system. For material of filler, the air with lower density was heated more rapidly rather than silicon carbide(SiC). For material of flow path, copper with the heat transfer coefficient of approximately four times greater than the nickel gives us higher efficiency. That is the reason why the heating time of methanol was reduced to make uniform temperature in washer heater system.