• Journal of the Korean Applied Science and Technology
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• v.17 no.1
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• pp.29-35
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• 2000

In this study, ultra-thin films of (N-docosyl quinolinium)-TCNQ(1:2) complex were prepared on the hydrophilic substrate by Langmuir-Blodgett(LB) technique. The characteristics of ${\pi}-A$ isotherms were studied to find optimum conditions of deposition by varying temperature of subphase, compression speed of barrier and amount of spreading solution. Using UV-vis spectra, capacitance and thickness, deposition of LB films was confirmed together with the thickness of the naturally oxidized aluminum film inside a device and dielectric constant of (N-docosyl quinolinium)-TCNQ(1:2) complex. The dielectric constant of LB film was about $4.59{\sim}5.58$. The electrical properties of (N-docosyl quinolinium)-TCNQ(1:2) complex were investigated at room temperature. The conductivity of this film measured by the direction of either vertical or horizontal axis was found to have a quite different value.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.113-116
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• 1998

This study should investigate to what extent the electric field of a vacuum interrupter might be influenced by the electric potential of floating arc shield. The electric potentials of floating shield and electric fields of a vacuum interrupter are analysed by a finite element method against variation of gap distances from 1mm to 12mm. The electric potentials of floating shield was increased with the gap distance, which is because the relative position of shield is closer to fixed contact so that the capacitance distribution inside interrupter is varied. The calculated results show that the maximum value of electric field of a vacuum interrupter with floating shield is nearly same to that without shield at shorter gap distance(below 5mm), however at larger gaps a significant increment of electric field is achieved in interrupter with shield companying with model without shield, which is due to the influence of charged floating shield.

• Transactions on Electrical and Electronic Materials
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• v.10 no.5
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• pp.147-151
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• 2009

For integrated passive device (IPD) applications, we have successfully developed and characterized metalinsulator-metal (MIM) capacitors with 2000 $\AA$ plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which are deposited with the $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $250^{\circ}C$. Five PECVD process parameters are designed to lower the refractive index and lower the deposition rate of $Si_3N_4$ films for the high breakdown electric field. For the PECVD process condition of gas mixing rate (0.957), working pressure (0.9 Torr), and RF power (60 W), the atomic force microscopy (AFM) root mean square (RMS) value of about 2000 $\AA$ $Si_3N_4$ on the bottom metal is lowest at 0.862 nm and the breakdown electric field is highest at about 8.0 MV/cm with a capacitance density of 326.5 pF/$mm^2$. A pretreatment of metal electrodes is proposed, which can reduce the peeling of nitride in the harsh test environment of heat, pressure, and humidity.

• The Journal of Korean Obstetrics and Gynecology
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• v.19 no.3
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• pp.247-256
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• 2006

Purpose : To research the Skin Resistance Variability(SRV) of premature ovarian failure(POF) patients by Autonomic Bioelectric Response Recorder(ABR-2000 system, Meridian, Korea) and report the specific results in SRV of POF patients. Methods : We measured SRV of 17 POF Patients who came to Conmaul Oriental Medical Hospital during August 2005 ${\sim}$ July 2006 by ABR-2000 system. We analyzed the results which height of graph Part was converted into 0${\sim}$10, and the readings of Low/Normal/High. Results : The mean value of graph height on each(1, 2, 3) part is lower than normal range(4-6) in POF patients. The distribution ratio of Low/Normal/High on each(1, 2, 3) part shows that there are much more Low proportion in POF patients. Conclusion : The low graph height of POF patients on 1, 2, 3 part means that conductivity & capacitance of POF patients is low, especially on head.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.8 no.6
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• pp.173-179
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• 2009

Recently, the super capacitor(EDLC) which has drawn attention as a new energy storage element has a lot of advantage such as no maintenance, long lifetime and quick charge/discharge characteristics with large current. The objective of this paper is propose a parameter measurement method to detect the changes in equivalent series resistor (ESR) and the capacitance value of a super capacitor in order to analysis the internal characteristic and worn-out state of a super capacitor. For proposed method, only the capacitor voltage measurement using simple analog switch is required. In addition, experimental results of voltage sag compensation system in order to compensate the input voltage drop during short-term power interruption adopted super capacitor are presented.

• Journal of information and communication convergence engineering
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• v.16 no.1
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• pp.12-16
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• 2018

In this work, a voltage controlled oscillator (VCO) monolithic microwave integrated circuit (MMIC) was demonstrated for 10-GHz band motion detecting sensors. The VCO MMIC was fabricated using a $2-{\mu}m$ InGap/GaAs HBT process, and the tuning of the oscillation frequency is achieved by changing the internal capacitance in the HBT, instead of using extra varactor diodes. The implemented VCO MMIC has a micro size of $500{\mu}m{\times}500{\mu}m$, and demonstrates the value of inserting the VCO into a single chip transceiver. The experimental results showed that the frequency tuning characteristic was above 30 MHz, with the excellent output flatness characteristic of ${\pm}0.2dBm$ over the tuning bandwidth. And, the VCO MMIC exhibited a phase noise characteristic of -92.64 dBc/Hz and -118.28 dBc/Hz at the 100 kHz and 1 MHz offset frequencies from the carrier, respectively. The measured values were consistent with the design values, and exhibited good performance.

• The Korean Journal of Ceramics
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• v.5 no.4
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• pp.353-356
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• 1999

Highly proten-conductive elastic composites have been successfully prepared from $H_3PO_4$-doped silica gel and styrene-ethylene-butylene-styrene block elastic copolymer. In addition solid state electric double-layer capacitors have been fabricated using the composite as an electrolyte and activated carbon powders(ACP) hybridized with the composite as a polrizable electrode. The cyclic voltammogram of the electric double-layer capacitor fabricated demonstrated that electric charge was stored in the elecric double-layer at the interface between the polarizable electrode and the electrolyte. The value of capacitance of the capacitor was 10 F/(gram of total ACP), which was comparable to that of the capacitors using conventional liquid electrolytes.

• Bulletin of the Korean Chemical Society
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• v.23 no.5
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• pp.741-744
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• 2002

Single phase of multicomponent oxide ZrTiO4 film could be prepared through surface sol-gel route simply by coating the mixture of 100 mM zirconium butoxide and titanium butoxide on $Pt/Ti/SiO_2Si(100)$ substrate, following pyro lysis at $450^{\circ}C$, and annealing it at 770 $^{\circ}C.$ The dielectric constant of the film was reduced as the film thickness decreased due to of the interfacial effects caused by layer/electrode and a few voids inside the multilayer. However, the dielectric property was independent of applied dc bias sweeps voltage (-2 to +2 V).The dielectric constant of bulk film, 31.9, estimated using series-connected capacitor model was independent of film thickness and frequency in the measurement range, but theoretical interfacial thickness, ti, was dependent on the frequency. It reached a saturated ti value, $6.9{\AA}$, at high frequency by extraction of some capacitance component formed at low frequency range. The dielectric constant of bulk ZrTiO4 pellet-shaped material was 33.7 and very stable with frequency promising as good applicable devices.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.69-77
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• 2016

We propose nano-scale Cu direct bonding technology using ultra-high density Cu nano-pillar (CNP) with for high stacking yield exascale 2.5D/3D integration. We clarified the joining mechanism of nano-scale Cu direct bonding using CNP. Nano-scale Cu pillar easily bond with Cu electrode by re-crystallization of CNP due to the solid phase diffusion and by morphology change of CNP to minimize interfacial energy at relatively lower temperature and pressure compared to conventional micro-scale Cu direct bonding. We confirmed for the first time that 4.3 million electrodes per die are successfully connected in series with the joining yield of 100%. The joining resistance of CNP bundle with $80{\mu}m$ height is around 30 m for each pair of $10{\mu}m$ dia. electrode. Capacitance value of CNP bundle with $3{\mu}m$ length and $80{\mu}m$ height is around 0.6fF. Eye-diagram pattern shows no degradation even at 10Gbps data rate after the lamination of anisotropic conductive film.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.5
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• pp.858-865
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• 2008

In this paper, Capacitive Telemetry RF Sensor System using Recursive Least Square (RLS) algorithm was proposed. General Telemetry RF Sensor System means that it should be "wireless", "implantable" and "batterless". Conventional Telemetry RF Sensor System adopts Integrated Circuit type, but there are many defects like complexity of structure and the limitation of large power consumption in some cases. In order to overcome these disadvantages, Telemetry RF Sensor System based on inductive coupling principle was proposed in this paper. Proposed Telemetry RF Sensor System is very simple because it consists of R, L and C and measures the changes of environment like pressure and humidity in the type of capacitive value. This system adopted RLS algorithm for estimation of this capacitive parameter. For the purpose of applying RLS algorithm, proposed system was mathematically modelled with phasor method and was quasi-linearized. As two parameters such as phase and amplitude of output voltage for estimation were needed, Phase Difference Detector and Amplitude Detector were proposed respectively which were implemented using TMS320C2812 made by Texas Instrument. Finally, It is verified that the capacitance of proposed telemetry RF Sensor System using RLS algorithm can be estimated efficiently under noisy environment.