• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.9
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• pp.1625-1632
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• 2006

We studied the effects or electric potential in ST37(+) and ST39(-) generated by various the manual art stimulus or acupuncture at ST36. And compared with data on the change of electric potential from hand of performer acupuncture therapy. Electric potential induced via acupuncture from performer may be important factor that is the initiation of electric potential changes in meridian and meridian point of being performer. The results for various manual art stimulus in acupuncture therapy was that four type of electro-wave observed. That is the capacitance currents type, sign wave type, triangle wave type and circle type triangle wave. And the change of electric potential ransfer from performer acupuncture therapy in stable electro-circle condition, were capacitance currents type. So we suggested that capacitance currents stimulus in electronic view may be important factor in acupuncture therapy between performer acupuncture therapy and being performer acupuncture therapy.

• Proceedings of the Optical Society of Korea Conference
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• 1991.06a
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• pp.135-138
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• 1991

A planar type PIN photodiode has been fabricated and discussed. We used OMVPE systems to grow the structure of u-InP/u-InP/n-InP. P-n junction was formed by Zn-diffusion method at 50$0^{\circ}C$, for 5 minitues. The device characteristics at 5V were as follows: Dark currents were distributed around 1nA. Capacitance was 1.6pF and responsivity was above 0.85 mA/mW for 1.3${\mu}{\textrm}{m}$ wavelength. Measured cut-off frequency(-3dB) at -5V was 1.1㎓.

• Journal of Power Electronics
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• v.13 no.3
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• pp.329-338
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• 2013

In this paper, the charging characteristics of series resonant type high voltage capacitor chargers considering the transformer stray capacitance have been studied. The principles of operation for the four operational modes and the mode changes for the four different switching frequency sections are explained and analyzed in the range of switching frequency below the resonant frequency. It is confirmed that the average charging currents derived from the above analysis results have non-linear characteristics in each of the four modes. The resonant current, resonant voltage, charging current, and charging time of this capacitor charger as variations of the switching frequency, series parallel capacitance ratio ($k=C_p/C_s$), and output voltage are calculated. From the calculation results, the advantages and disadvantages arising from the parallel connection of this stray capacitance are described. Some methods to minimize charging time of this capacitor charger are suggested. In addition, the results of a comparative test using two transformers whose stray capacitances are different are described. A 1.8 kJ/s prototype capacitor charger is assembled with a TI28335 DSP controller and a 40 kJ, 7 kV capacitor. The analysis results are verified by the experiment.

• Bulletin of the Korean Chemical Society
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• v.20 no.9
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• pp.1049-1055
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• 1999

Electrochemical oxidation of silicon (p-type Si(100)) at room temperature in ethylene glycol and in aqueous solutions has been performed by applying constant low current densities for the preparation of thin SiO2 layers. In-situ ac impedance spectroscopic methods have been employed to characterize the interfaces of electrolyte/oxide/semiconductor and to estimate the thickness of the oxide layer. The thicknesses of SiO2 layers calculated from the capacitive impedance were in the range of 25-100Å depending on the experimental conditions. The anodic polarization resistance parallel with the oxide layer capacitance increased continuously to a very large value in ethylene glycol solution. However, it decreased above 4 V in aqueous solutions, where oxygen evolved through the oxidation of water. Interstitially dissolved oxygen molecules in SiO2 layer at above the oxygen evolution potential were expected to facilitate the formation of SiO2 at the interfaces. Thin SiO2 films grew efficiently at a controlled rate during the application of low anodization currents in aqueous solutions.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.8
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• pp.34-41
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• 1993

Effect of high temperature annealing conditions on Ta$_{2}O_{5}$ thin films was investigated. Ta$_{2}O_{5}$ thin films were deposited on P-type silicon substrates by plasma-enhanced chemical vapor deposition (PECVD) using tantalum ethylate. Ta(C$_{2}H_{5}O)_{5}$, and nitrous oxide. N$_{2}$O. The microstructure changed from amorphous to polycrystalline above 700.deg. C annealing temperature. The refractive index, dielectric onstant and leakage current of the film increased as annealing temperature increased. However, annealing in oxygen ambient reduced leakage currents and dielectric constant due to the formation of interfacial SiO$_{2}$ layer. By optimizing annealing temperature and ambient, leakage current lower than 10$^{-8}$ A/cm$^{2}$ and maximum capacitance of 9 fF/${\mu}m^{2}$ could be obtained.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.19 no.4
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• pp.71-78
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• 2005

This paper proposes a novel multi-level energy recovery sustaining driver for AC PDP(Plasma Display Panel), which solves the problems of the conventional multi-level sustaining driver. While the conventional circuit improves the voltage md current stress of the switching elements in Weber circuit not only there are parasitic resonant currents between resonant inductors and parasitic capacitance and hard switching, but also the changing period between 0 and sustain voltage is too long. Comparing the proposed circuit with the conventional circuit, the number of components are reduced and the parasitic resonant currents in resonant inductors are eliminated Moreover the hard switching problem is solved by using CIM(Current Injection Method) and the operating frequency will be high as much as possible by removing Vs/2 sustain period. And the circuit operations of the proposed circuit are analyzed for each mode and the validity is verified by the simulations using PSpice program.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2003.09a
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• pp.45-45
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• 2003

The aim of this study was the characterization and performance validation of new prototype avalanche photodiode (APD) arrays for positron emission tomography (PET). Two different APD array prototypes (noted A and B) developed by Radiation Monitoring Device (RMD) have been investigated. Principal characteristics of the two APD array were measured and compared. In order to characterize and evaluate the APD performance, capacitance, doping concentration, quantum efficiency, gain and dark current were measured. The doping concentration that shows the impurity distribution within an APD pixel as a function of depth was derived from the relationship between capacitance and bias voltage. Quantum efficiency was measured using a mercury vapor light source and a monochromator used to select a wavelength within the range of 300 to 700 nm. Quantum efficiency measurements were done at 500 V, for which the APD gain is equal to one. For the gain measurements, a pencil beam with 450 nm in wavelength was illuminating the center of each pixel. The APD dark currents were measured as a function of gain and bias. A linear fitting method was used to determine the value of surface and bulk leakage currents. Mean quantum efficiencies measured at 400 and 450 nm were 0.41 and 0.54, for array A, and 0.50 and 0.65 for array B. Mean gain at a bias voltage of 1700 V, was 617.6 for array A and 515.7 for type B. The values based on linear fitting were 0.08${\pm}$0.02 nA 38.40${\pm}$6.26 nA, 0.08${\pm}$0.0l nA 36.87${\pm}$5.19 nA, and 0.05${\pm}$0.00 nA, 21.80${\pm}$1.30 nA in bulk surface leakage current for array A and B respectively. Results of characterization demonstrate the importance of performance measurement validating the capability of APD array as the detector for PET imaging.

• Journal of the Optical Society of Korea
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• v.16 no.1
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• pp.1-5
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• 2012

This paper describes a 150-Mb/s monolithic optical receiver for plastic optical fiber link using a standard CMOS technology. The receiver integrates a photodiode using an N-well/P-substrate junction, a pre amplifier, a post amplifier, and an output driver. The size, PN-junction type, and the number of metal fingers of the photodiode are optimized to meet the link requirements. The N-well/P-substrate photodiode has a 200-${\mu}m$ by 200-${\mu}m$ optical window, 0.1-A/W responsivity, 7.6-pF junction capacitance and 113-MHz bandwidth. The monolithic receiver can successfully convert 150-Mb/s optical signal into digital data through up to 30-m plastic optical fiber link with -10.4 dBm of optical sensitivity. The receiver occupies 0.56-$mm^2$ area including electrostatic discharge protection diodes and bonding pads. To reduce unnecessary power consumption when the light is not over threshold or not modulating, a simple light detector and a signal detector are introduced. In active mode, the receiver core consumes 5.8-mA DC currents at 150-Mb/s data rate from a single 3.3 V supply, while consumes only $120{\mu}W$ in the sleep mode.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.22 no.2
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• pp.810-818
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• 2021

A leakage current of ESS is classified mainly by the occurrence from a PCS(Power Conditioning System) section and an unbalanced grid current. The reason for the leakage current from the PCS section is a voltage change by IGBT (Insulated Gate Bipolar Transistor) switching and stray capacitance between the IGBT and heatsink. The leakage current caused by the grid unbalanced current flows to the ESS through the neutral line of grid-connected transformer for the ESS with a three limb iron type of Yg-wire connection. This paper proposes a mechanism for the occurrence of leakage current caused by stray capacitance, which is calculated using the heatsink formula, from the aspect of the PCS section and grid unbalance current. Based on the proposed mechanisms, this study presents the modeling of the leakage current occurrence using PSCAD/EMTDC S/W and evaluates the characteristics of leakage currents from the PCS section and grid unbalanced current. From the simulation result, the leakage current has a large influence on the battery side by confirming that the leakage current from the PCS is increased from 7[mA] to 34[mA], and the leakage current from an unbalanced load to battery housing is increased from 3.96[mA] to 10.76[mA] according to the resistance of the housings and the magnitude of the ground resistance.

• Korean Journal of Veterinary Research
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• v.40 no.2
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• pp.275-282
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• 2000

Substantia nigra is known to highly express glibenclamide binding site, a protein associated to ATP-sensitive $K^{+}$ ($K_{ATP}$) channel in the brain. However, the functional expression of $K_{ATP}$ channels in the area is not yet known. In this work, we attempted to estimate the functional expression of $K_{ATP}$ channels in neurons of the substantia nigra pars compacta (SNC) in young rats using slice patch clamp technique. Membrane properties and whole cell currents attributable to $K_{ATP}$ channel were examined by the current and voltage clamp method, respectively. In SNC, two sub-populations of neurons were identified. Type I (rhythmic) neurons had low frequency rebound action potentials ($4.5{\pm}0.25Hz$, n=75) with rhythmic pattern. Type II (phasic) neurons were characterized by faster firing ($22.7{\pm}3.16Hz$, n=12). Both time constants and membrane capacitance in rhythmic neurons ($34.0{\pm}1.27$ ms, $270.0{\pm}11.83$ pF) and phasic neurons ($23.7{\pm}4.16$ ms, $184{\pm}35.2$ pF) were also significantly different. The current density of $K_{ATP}$ channels was $6.1{\pm}1.47$ pA/pF (2.44~15.43 pA/pF, n=8) at rhythmic neurons of young rats. Our data show that in SNC there are two types of neurons with different electrical properties and the density of $K_{ATP}$, channel of rhythmic neuron is about 600 channels per neuron.