• JSTS:Journal of Semiconductor Technology and Science
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• 제15권5호
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• pp.577-584
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• 2015

A photovoltaic (PV) system generates electricity by installing a solar energy array; therefore, the photovoltaic system can be easily exposed to external factors, which include environmental factors such as temperature, humidity, and radiation. These factors-as well as shading, in particular-lead to power degradation. When there is an output loss in the solar cell of a PV module package, the output loss is partly controlled by the bypass diode. As solar cells become highly efficient, the characteristics of series resistance and parallel resistance improve, and the characteristics of reverse voltage change. A bypass diode is connected in parallel to the string that is connected in series to the PV module. Ideally, the bypass diode operates when the voltage is -0.6[V] around. This study examines the bypass diode operating time for different types of crystalline solar cells. It compares the reverse voltage characteristics between the single solar cell and polycrystalline solar cell. Special modules were produced for the experiment. The shading rate of the solar cell in the specially made solar energy module was raised by 5% each time to confirm that the bypass diode was operating. The operation of the bypass diode is affected not only by the reverse voltage but also by the forward bias. This tendency was verified as the number of strings increased.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.334.2-334.2
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• 2016

Silicon nitride (SiNx:H) films are generally used as passivation layer on solar cell and they are usually made by plasma enhanced chemical vapor deposition (PECVD). In this study, we investigated the properties of silicon nitride (SiNx:H) films made by PECVD. Effects of mixture ratio of process gases with silane (SiH4) and ammonia (NH3) on the passivation qualities of silicon nitride film are evaluated. Passivation properties of SiNx:H are focused by making antireflection properties identical with thickness and refractive index controlled. The absorption coefficient of each film was evaluated by spectrometric ellipsometery and the minority carrier lifetimes were evaluated by quasi-steady-state photo-conductance (QSSPC) measurement. The optical properties were obtained by UV-visible spectrophotometer. The interface properties were measured by capacitance-voltage (C-V) measurement and the film components were identified by Fourier transform infrared spectroscopy (FT-IR) and Rutherford backscattering spectroscopy detection (RBS) - elastic recoil detection (ERD).

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.122.2-122.2
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• 2011

결정질 태양전지 제작에서, passavtion은 표면의 반사도를 줄여주는 반사 방지막의 역할과 표면의 dangling bond를 감소시켜, 표면 재결합 속도를 줄이고 minority carrier lifetime을 증가하는 데 큰 영향을 미친다. 그렇기 때문에 저가형 고효율 태양전지 제작에서 우수한 특성을 가지는 passivation막은 매우 중요한 이슈이다. 본 연구에서는 LBC(local back contact) 구조를 가지는 단결정 태양전지 후면에, 기존의 Full Al-BSF의 passivation 막을 SiNx와 ONO passivation 막으로 각각 대체하여, LBC 구조에서 더 적합한 passivation 막을 찾고자 하였다. SiNx와 ONO passivation 막은 단결정 LBC 구조 태양전지 후면에 각각 형성되었고 $800^{\circ}C$, 20 sec 조건으로 소성되었다. 실험결과는 minority carrier lifetime과 surface recombination velocity로 관찰하였다. 그 결과, SiNx passivation 막의 표면 재결합 속도는 29.7cm/s이고, ONO passivation 막의 표면 재결합 속도는 24.5cm/s로, Full Al-BSF 표면 재결합 속도 750cm/s에 비해 더 적합한 passivation 막으로 확인할 수 있었다. 결과적으로 SiNx,ONO passivation 막이 Full Al-BSF보다 전극에 수집되는 캐리어의 양이 많아짐에 따라 효율향상을 가져올 수 있을 것이다.

• 태양에너지
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• 제8권2호
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• pp.19-25
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• 1988

[ $SnO_2$ ] thin films have been deposited on the pyrex glasses and silicon wafers by CVD method. Tin oxide films had a good transmittance above 80% in the visible region and the lowest sheet resistance at $520^{\circ}C$. When the ratio of $SbCl_3$ was 2wt%. The optimum conditions were obtained at the oxidation time of 3 minutes in the case that Voc and Jsc were 0.40V and $33.5mA/cm^2$ respectively and the corresponding conversion efficiency was 6.07%.

• 한국재료학회지
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• 제21권2호
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• pp.120-124
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• 2011

Silicon heterojunction solar cells have been studied by many research groups. In this work, silicon heterojunction solar cells having a simple structure of Ag/ZnO:Al/n type a-Si:H/p type c-Si/Al were fabricated. Samples were fabricated to investigate the effect of transparent conductive oxide growth conditions on the interface between ZnO:Al layer and a-Si:H layer. One sample was deposited by ZnO:Al at low working pressure. The other sample was deposited by ZnO:Al at alternating high working pressure and low working pressure. Electrical properties and chemical properties were investigated by light I-V characteristics and AES method, respectively. The light I-V characteristics showed better efficiency on sample deposited by ZnO:Al by alternating high working pressure and low working pressure. Atomic concentrations and relative oxidation states of Si, O, and Zn were analyzed by AES method. For poor efficiency samples, Si was diffused into ZnO:Al layer and O was diffused at the interface of ZnO:Al and Si. Differentiated O KLL spectra, Zn LMM spectra, and Si KLL spectra were used for interface reaction and oxidation state. According to AES spectra, sample deposited by high working pressure was effective at reducing the interface reaction and the Si diffusion. Consequently, the efficiency was improved by suppressing the SiOx formation at the interface.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.308-309
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• 2016

Reducing surface recombination is a critical factor for high efficiency silicon solar cells. The passivation process is for reducing dangling bonds which are carrier. Tunnel oxide layer is one of main issues to achieve a good passivation between silicon wafer and emitter layer. Many research use wet-chemical oxidation or thermally grown which the highest conversion efficiencies have been reported so far. In this study, we deposit ultra-thin tunnel oxide layer by PECVD (Plasma Enhanced Chemical Vapor Deposition) using $N_2O$ plasma. Both side deposit tunnel oxide layer in different RF-power and phosphorus doped a-Si:H layer. After deposit, samples are annealed at $850^{\circ}C$ for 1 hour in $N_2$ gas atmosphere. After annealing, samples are measured lifetime and implied Voc (iVoc) by QSSPC (Quasi-Steady-State Photo Conductance). After measure, samples are annealed at $400^{\circ}C$ for 30 minute in $Ar/H_2$ gas atmosphere and then measure again lifetime and implied VOC. The lifetime is increase after all process also implied VOC. The highest results are lifetime $762{\mu}s$, implied Voc 733 mV at RF-power 200 W. The results of C-V measurement shows that Dit is increase when RF-power increase. Using this optimized tunnel oxide layer is attributed to increase iVoc. As a consequence, the cell efficiency is increased such as tunnel mechanism based solar cell application.

• Journal of the Korean Physical Society
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• 제73권11호
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• pp.1787-1793
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• 2018

The power conversion efficiency of perovskite solar cells has reached 23.3%. Although significant developments have been made through intensive studies, the stability issue is still challenging. Passivation of perovskite solar cells with a transparent polymer provides better stability; however, there are a few disadvantages of organic polymer such as low thermal stability, weak adhesion and the lack of water retention ability. In this work, we prepared a dual Parylene-F/C layer with 3-methacryloxypropyltrimethoxysilane, A-174, to combine the advantages of organic and inorganic materials. As a result, A-174 treated dual Parylene-F/C layer demonstrated improved passivation effects compared to a single Parylene layer due to the strong binding of Parylene and the water retention ability by $SiO_2$ formed from A-174. This synergetic effects can be expanded to the combination of other organic materials and organosilane compounds.

• 융복합기술연구소 논문집
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• 제8권1호
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• pp.33-39
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• 2018

The screen printing method for forming the electrode by applying the existing pressure is difficult to apply to thin wafers, and since expensive Ag paste is used, it is difficult to solve the problem of cost reduction. This can solve both of the problems by forming the front electrode using a plating method applicable to a thin wafer. In this paper, the process conditions of electrode formation are optimized by using LIEP (Light-Induced Electrode Plating). Experiments were conducted by varying the Ni plating bath temperature $40{\sim}70^{\circ}C$, the applied current 5 ~ 15 mA, and the plating process time 5 ~ 20 min. As a result of the experiment, it was confirmed that the optimal condition of the structural characteristics was obtained at the plating bath temperature of $60^{\circ}C$, 15 mA, and the process time of 20 min. The Cu LIEP process conditions, experiments were conducted with Cu plating bath temperature $40{\sim}70^{\circ}C$, applied voltage 5 ~ 15 V, plating process time 2 ~ 15 min. As a result of the experiment, it was confirmed that the optimum conditions were obtained as a result of electrical and structural characteristics at the plating bath temperature of $60^{\circ}C$ and applied current of 15 V and process time of 15 min. In order to form Ni silicide, the firing process time was fixed to 2 min and the temperature was changed to $310^{\circ}C$, $330^{\circ}C$, $350^{\circ}C$, and post contact annealing was performed. As a result, the lowest contact resistance value of $2.76{\Omega}$ was obtained at the firing temperature of $310^{\circ}C$. The contact resistivity of $1.07m{\Omega}cm^2$ can be calculated from the conditionally optimized sample. With the plating method using Ni / Cu, the efficiency of the solar cell can be expected to increase due to the increase of the electric conductivity and the decrease of the resistance component in the production of the solar cell, and the application to the thin wafer can be expected.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.53-60
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• 2014

Different kinds of post-deposition annealing (PDA) by a rapid thermal process (RTP) are used to enhance the field-effect passivation of $Al_2O_3$ film in crystal Si solar cells. To characterize the effects of PDA on $Al_2O_3$ and the interface, metal-insulator semiconductor (MIS) devices were fabricated. The effects of PDA were characterized as functions of RTP temperature from $400{\sim}700^{\circ}C$ and RTP time from 30~120 s. A high temperature PDA can retard the passivation of thin $Al_2O_3$ film in c-Si solar cells. PDA by RTP at $400^{\circ}C$ results in better passivation than a PDA at $400^{\circ}C$ in forming gas ($H_2$ 4% in $N_2$) for 30 minutes. A high thermal budget causes blistering on $Al_2O_3$ film, which degrades its thermal stability and effective lifetime. It is related to the film structure, deposition temperature, thickness of the film, and annealing temperature. RTP shows the possibility of being applied to the PDA of $Al_2O_3$ film. Optimal PDA conditions should be studied for specific $Al_2O_3$ films, considering blistering.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1592-1594
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• 2003

This paper presents the deposition and characterization of microcrystalline silicon(${\mu}c$-Si:H) films by HWCVD(Hot-wire Chemical Vapor Deposition) method at low substrate($300^{\circ}C$). The filament temperature, pressure and $SiH_4$ concentration were determined to be a critical parameter for the deposition of poly-Si films. Series A was deposited under the conditions of $1380^{\circ}C$(Tf), 100 mTorr and $2{\sim}10%\{SC:SiH_4/(SiH_4+H_2)\}$ for 60 min. Series B was deposited under the conditions of $1400{\sim}1450^{\circ}(T_f)$, 30 mTorr and $2{\sim}12%$(SC) for 60 min. The physical characteristics were measured by Raman and FTIR spectroscopy, dark and photoconductivity measurements under AM1.5 illumination.