Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)

The Korean Vacuum Society (한국진공학회)
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Passivation Properties of Hydrogenated Silicon Nitrides deposited by PECVD

  • Kim, Jae Eun (Department of Materials Science and Engineering, Korea University) ;
  • Lee, Kyung Dong (Department of Materials Science and Engineering, Korea University) ;
  • Kang, Yoonmook (KU-KIST Green School, Graduate School of Energy and Environment, Korea University) ;
  • Lee, Hae-Seok (Department of Materials Science and Engineering, Korea University) ;
  • kim, Donghwan (Department of Materials Science and Engineering, Korea University)
  • Published : 2016.02.17
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Abstract

Silicon nitride (SiNx:H) films are generally used as passivation layer on solar cell and they are usually made by plasma enhanced chemical vapor deposition (PECVD). In this study, we investigated the properties of silicon nitride (SiNx:H) films made by PECVD. Effects of mixture ratio of process gases with silane (SiH4) and ammonia (NH3) on the passivation qualities of silicon nitride film are evaluated. Passivation properties of SiNx:H are focused by making antireflection properties identical with thickness and refractive index controlled. The absorption coefficient of each film was evaluated by spectrometric ellipsometery and the minority carrier lifetimes were evaluated by quasi-steady-state photo-conductance (QSSPC) measurement. The optical properties were obtained by UV-visible spectrophotometer. The interface properties were measured by capacitance-voltage (C-V) measurement and the film components were identified by Fourier transform infrared spectroscopy (FT-IR) and Rutherford backscattering spectroscopy detection (RBS) - elastic recoil detection (ERD).

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