• Journal of the Korean Ceramic Society
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• v.33 no.7
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• pp.761-770
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• 1996

Silicon carbide (SiC) films were deposited by low pressure chemical vapor deposition (LPCVD) using MTS (CH3SICl3) in a hydrogen atmosphere onto graphite substrates. Depletion effects of reactants which usually occur in the hot wall horizaontal reactor were increased with deposition temperature and pressure. Below 50 torr of total pressure (111) plane was preferenctially grown irrespectrive of deposition temperature and deposition site. Over 50 torr of total pressure however (220) plane was preferentially deposited under 130$0^{\circ}C$ and at inlet site. The surface morphologies of SiC films were uniform at all deposition sites under low pressure but greatly changed with pressure. It shows that a facet structure which was formed above 125$0^{\circ}C$ played an important role in the changed of preferred orientation and surface roughness.

• Journal of the Korean Ceramic Society
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• v.29 no.12
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• pp.926-934
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• 1992

Uniform diamond films in a few $\textrm{mm}^2$ size and locally isolated diamond single crystals in size of 60 $\mu\textrm{m}$ were synthesized on Si-wafer and Al2O3 substrate by the method of acetylene flame. The effects of substrate temperature and flow ratio of oxygen to acetylene on the morphology of deposited diamond were investigated. According to the observations of growth behavior of diamond on Si substrate with respect to substrate surface pretreatment and flow ratio, it was shown that well faceted diamonds could grow uniformly when flow ratio was above 0.9 and substrates were densely scratched. With increasing substrates temperature, the crystal morphology changes from octahedron bounded by only {111} plane below 850$^{\circ}C$ to cubo-octahedron with almost equal development of {111} and {100} plane in the temperature range of 850∼950$^{\circ}C$. Between 950∼1050$^{\circ}C$, the {111} faces become rough and concave. Above 1050$^{\circ}C$, new crystallites begin to grow on concave {111} surface and overall morphology looks like cubo-octahedron with degenerated {111} faces. These changes of morphology can be understood in terms of the different growth mode of each crystallographic plane with respect to the substrate temperature and supersaturation. And the observed phenomena on {111} planes can be related to the face instability and twin generation.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.43 no.2
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• pp.166-171
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• 2015

This paper shows the design of operational flight program(OFP) using model-based design(MBD) method which is used in various engineering fields to reduce time and flight risks for development. The verification of OFP for DO-178C guidelines carry out by a model advisor function of simulink. The flight control logic on simulink is converted into C-language by auto code generation tool from, then it is implemented on 32bit digital signal processor(DSP). The verifications of flight control algorithm on various weather conditions are performed by the HILS system with Flight simulator program, X-plane.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2002.11b
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• pp.848-851
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• 2002

In this paper, an experimental method using a reference accelerometer has been developed to measure the in-plane vibration intensity of a beam. It has the advantages of reducing accelerometer phase error comparing with the cross spectral intensity measurement technique using an accelerometer array. It needs no measurement of the input force required in the frequency response method using the only one accelerometer This method has been used to measure the in-plane vibration intensity over the beam. The result has been compared with an input power and the vibration intensity obtained with other methods. It showed that the present experimental method can be effectively used to measure the structural in-plane vibration intensity.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.204-210
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• 1995

The characteristics of the internal circuits and the load capacitance should be included to optimize the size of BiCMOS buffer. In order to get the optimum size and delay time of the BiCMOS buffer, new size plane is suggested. By using the size plane, the optimum characteristics of CMOS buffer according to the number of stages can be obtained. From this method, delaytime, .tau.$_{D}$, is obtained 2.39 nsec with $V_{\var}$=5V, $C_{L}$=5pF, W=30.mu.m and $A_{e}$=135.mu. $m^{2}$.>..>...>.

• Korean Journal of Materials Research
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• v.22 no.8
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• pp.397-402
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• 2012

Morphological control on hydroxyapatite crystals has attractive prospects in research to clarify the effects of crystal planes on biological performance. Hydrothermal processing is known as a typical type of processing for fabricating well-grown crystals with unique morphology. The purpose of the present study is to examine the feasibility of well-crystallized crystals with oriented structures through hydrothermal treatment of calcite. A single crystal of calcite was applied to hydrothermal treatment in a phosphate solution at $160^{\circ}C$. Rod-shaped hydroxyapatite crystals with micrometer-size were formed on the {100} face of calcite after treatment, while nanometer-sized hydroxyapatite crystals were formed on the (111). The hydroxyapatite crystals formed on each plane were not morphologically changed with increasing treatment periods. An oriented structure of rod-shaped hydroxyapatite was constructed after hydrothermal treatment of {100} planes on the calcite single, while such orientation was not observed on the (111) plane after the treatment. The layer of hydroxyapatite formed on the {100} plane was thicker than that of the (111) plane. The {100} plane of calcite shows a higher reactivity than that of the (111) plane, which results in rapid crystal growth of hydroxyapatite. The difference in the morphology of the formed hydroxyapatite was governed by the reactivity of each crystal plane exposed to the surrounding solution.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.675-676
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• 2008

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.10a
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• pp.351-352
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• 2009

• Journal of applied mathematics & informatics
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• v.26 no.1_2
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• pp.121-133
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• 2008

In this article, we define Minkowski Pythagorean-hodograph (MPH) curves in the Minkowski plane $\mathbb{R}^{1,1}$ and obtain $C^1$ Hermite interpolations for MPH quintics in the Minkowski plane $\mathbb{R}^{1,1}$. We also have the envelope curves of MPH curves, and make surfaces of revolution with exact rational offsets. In addition, we present an example of $C^1$ Hermite interpolations for MPH rational curves in $\mathbb{R}^{2,1}$ from those in $\mathbb{R}^{1,1}$ and a suitable MPH preserving mapping.

• Proceedings of the KIEE Conference
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• 2001.07a
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• pp.243-245
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• 2001

This paper presents a new classification method for high impedance faults in power systems. Results of phase plane trajectory with Clarke modal transformation using postfault current and voltage are utilized to classify types of arcing faults. The performance of the proposed method is tested on a typical 154 kV korean transmission system under various fault conditions using EMTP. As can be seen from results, phase plane trajectory of postfault current should be combined with that of o component from Clarke modal transformation to give reliability of clear fault classification. Thus the proposed method can classify arcing faults including LIFs and HIFs accurately in power systems.