• Laser Solutions
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• v.4 no.3
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• pp.40-44
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• 2001

Microbump formation during CO$_2$ laser texturing of glass substrates is examined in this paper. Experimental results show that different bump shapes (dome-shaped, with a central dimple, and with a peripheral rim) are generated depending on the laser fluence. A theoretical model for the process is suggested based on thermoelastic behavior but limited only to the dome-shaped bump. The dimensions (maximum height and base area) of the bump shows a logarithmic dependence on laser fluence as expected from the theory. Numerical computation reveals that the effect of thermal diffusion is not negligible for relatively long laser pulses.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.06a
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• pp.236-242
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• 2001

In this paper the effect of bump compliance, load, and the number of pad on the lift-off speed is studied. When the load is greater and bump compliance lower, the shaft is lifted off at higher rotating speed. And when the load is applied near the center of pad, lift-off speed is lower. When the number of pad increases, the lift-off speed is higher. The lift-off characteristics can be used to lengthen the life time of the coating and design the rotating machinery supported by bump bearings.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.3
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• pp.19-23
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• 2015

In this study, two types of Au/TiW bump samples were fabricated by the electroplating process onto Al/Si and SiN/Si wafers for the COG (Chip On Glass) packaging. TiW was used as the UBM (Under Bump Metallurgy) material of the Au bump and it was deposited by a sputtering method under the sputtering powers ranges from 500 to 5000 Watt. We investigated the delamination phenomenas for the prepared samples as a function of the input sputtering powers. The stable interfacial adhesion condition was found to be 1500 Watt in sputtering power. In addition, the SAICAS (Surface And Interfacial Cutting Analysis System) measurement was used to find the adhesion strength of Au bumps for the prepared samples. TiW UBM films were deposited at the 1500 Watt sputtering power. As a results, there was a similar adhesion strengths between TiW/Au interfacial films on Al/Si and SiN/Si wafers. However, the adhesion strength of TiW UBM sputtering films on Al and SiN under films were 2.2 times differences, indicating 0.475 kN/m for Al/Si wafer and 0.093 kN/m for SiN/Si wafer, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.4
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• pp.23-29
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• 2000

We demonstrate the fabrication method of high-density and high-quality solder bump solving a copper (Cu) cross-contamination in Si-LSI laboratory. The Cu cross-contamination is solved by separating solder-bump process by two steps. Former is via-formation process excluding Cu/Ti under ball metallurgy (UBM) layer sputtering in Si-LSI laboratory. Latter is electroplating process including Ti-adhesion and Cu-seed layers sputtering out of Si-LSI laboratory. Thick photoresist (PR) is achieved by a multiple coating method. After TiW/Al-electrode sputtering for electroplating and via formation in Si-LSI laboratory, Cu/Ti UBM layer is sputtered on sample. The Cu-seed layer on the PR is etched during Cu-electroplating with low-electroplating rate due to a difference in resistance of UBM layer between via bottom and PR. Therefore Cu-buffer layer can be electroplated selectively at the via bottom. After etching the Ti-adhesion layer on the PR, Sn/Pb solder layer with a composition of 60/40 is electroplated using a tin-lead electroplating bath with a metal stoichiometry of 60/40 (weight percent ratio). Scanning electron microscope image shows that the fabricated solder bump is high-uniformity and high-quality as well as symmetric mushroom shape. The solder bumps with even 40/60 $\mu\textrm{m}$ in diameter/pitch do not touch during electroplating and reflow procedures. The solder-bump process of high-uniformity and high-density with the Cu cross-contamination free in Si-LSI laboratory will be effective for electronic microwave application.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.7
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• pp.149-156
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• 2013

This paper presents a hardware edge detector of image signal at pixel level of CMOS image sensor (CIS). The circuit detects edges of an image based on a bump circuit combining with the pixels. The APS converts light into electrical signals and the bump circuit compares the brightness between the target pixel and its neighbor pixels. Each column on CIS 64 by 64 pixels array shares a comparator. The comparator decides a peak level of the target pixel comparing with a reference voltage. The proposed edge detector is implemented using 0.18um CMOS technology. The circuit shows higher fill factor 34% and power dissipation by 0.9uW per pixel at 1.8V supply.

• Korean Journal of Optics and Photonics
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• v.10 no.6
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• pp.443-447
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• 1999

To investigate the effect of a shaded apodizer on the read-out signal in an optical disc system, we consider the is apodizer in which the amplitude transmittance decreases gradually from the center of pupil toward its edge and the iH apodizer in which the amplitude transmittance increases gradually from the center of pupil toward its edge, using the scalar diffraction theory. We also consider the bump shapes which are a cylindric, a semi-conic, and a conic bump, and bump height which is given by $\lambda/4$ and occurs to the phase change $(\pi)$). The read-out signal of is apodizer increases from S = 0 upto maximum value, and then decreases for increasingly larger values of bOo While the iH apodizer has two maximum values. When an optical disc system has a spherical aberration $(W_{40}=0.5\lambda)$, the maximum read-OUt signal of is apodizer is higher than that of iv apodizer which has no apodizer.odizer.

• Tribology and Lubricants
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• v.34 no.3
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• pp.75-83
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• 2018

Microturbomachinery (< 250 kW) using gas foil bearings can function without oil lubricants, simplify rotor-bearing systems, and demonstrate excellent rotordynamic stability at high speeds. State-of-the-art technologies generally use bump foil bearings or leaf foil bearings due to the specific advantages of each of the two types. Although these two types of bearings have been studied extensively, there are very few studies on leaf-bump foil bearings, which are a combination of the two aforementioned bearings. In this work, we illustrate a simple mathematical model of the leaf-bump foil bearing with leaf foils supported on bumps, and predict its static and dynamic performances. The analysis uses the simple elastic model for bumps that was previously developed and verified using experimental data, adds a leaf foil model, and solves the Reynolds equation for isothermal, isoviscous, and ideal gas fluid flow. The model predicts that the drag torques of the leaf-bump foil bearings are not affected significantly by static load and bearing clearance. Due to the preload effect of the leaf foils, rotor spinning, even under null static load, generates significant hydrodynamic pressure with its peak near the trailing edge of each leaf foil. A parametric study reveals that, while the journal eccentricity and minimum film thickness decrease, the drag torque, direct stiffness, and direct damping increase with increasing bump stiffness. The journal attitude angle and cross-coupled stiffness remain nearly constant with increasing bump stiffness. Interestingly, they are significantly smaller compared to the corresponding values obtained for bump foil bearings, thus, implying favorable rotor stability performance.

• Journal of Biosystems Engineering
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• v.30 no.6 s.113
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• pp.366-372
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• 2005

The objective of this study was to evaluate the bump crossing and loading stability of a proto-type mini-forwarder under development. The evaluation was performed by computer simulation using a multi-body dynamic analysis program, Recur- Dyn 5.21. The proto-type was modeled and its properties such as mass, mass center, and mass moment of inertia were determined using 3D CAD modeler, Solid Edge 8.0. The $\%$ errors of masses, mass center, mass moment of inertia, and vertical motion of the model were within less than $10\%$ and the model's behavior agreed relatively well with those of the proto-type when traversing over a rectangular bump. Using the validated model, bump crossing of the proto-type was simulated and the loading limit was determined. It was found that effects of the shapes of bump on the bump crossing performance was insignificant within the practical heights of bumps. Stability of bump crossing increased with loading. However, loading of longer logs than 2.7 m made the crossing unstable because the ends of logs contacted ground when traversing over the bump. The maximum loading capacity of the proto-type was estimated to be 7.8 kN of 2.7 m long logs.

• Korean Journal of Materials Research
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• v.20 no.1
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• pp.19-24
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• 2010

The current study examined Ag migration from the Ag paste bump in the SABiT technology-applied PCB. A series of experiments were performed to measure the existence/non-existence of Ag in the insulating prepreg region. The average grain size of Ag paste was 30 nm according to X-ray diffraction (XRD) measurement. Conventional XRD showed limitations in finding a small amount of Ag in the prepreg region. The surface morphology and cross section view in the Cu line-Ag paste bump-Cu line structure were observed using a field emission scanning electron microscope (FE-SEM). The amount of Ag as a function of distance from the edge of Ag paste bump was obtained by FE-SEM with energy dispersive spectroscopy (EDS). We used an electron probe micro analyzer (EPMA) to improve the detecting resolution of Ag content and achieved the Ag distribution function as a function of the distance from the edge of the Ag paste bump. The same method with EPMA was applied for Cu filled via instead of Ag paste bump. We compared the distribution function of Ag and Cu, obtained from EPMA, and concluded that there was no considerable Ag migration effect for the SABiT technology-applied printed circuit board (PCB).

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.831-832
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• 2013