• 제목/요약/키워드: bulk structure

검색결과 852건 처리시간 0.029초

종이의 Pore 특성 측정 기법의 비교 (Comparison of pore analysis techniques of the paper)

  • 남기영;정순기;원종명
    • 한국펄프종이공학회:학술대회논문집
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    • 한국펄프종이공학회 2007년도 추계학술발표논문집
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    • pp.179-186
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    • 2007
  • The best way to understand paper properties is to study paper structure. Paper is composed solid materials (pulp and other additives) and air three-dimensionally, it's important to understand pore structure of the paper. There are several method to analysis pore structure of the paper. Mercury intrusion technique is frequently used for the characterization of the porous paper, giving access to parameters such as pore size and pore distribution. But some researchers indicated mercury intrusion distorts the structure due to application of high pressure. So this paper suggest new analysis technique to pore structure of the paper. New pore analysis technique with SEM does not require high pressure, gives good resolution and measures pore structure.

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복합구조의 압전 에너지 하베스터를 위한 공정연구 (Processing Study for the Piezoelectric Energy Harvest of Composit Structure)

  • 이경수;신동진;고중혁
    • 한국전기전자재료학회논문지
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    • 제25권4호
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    • pp.286-289
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    • 2012
  • In this paper, we have proposed piezoelectric energy harvester employing the pillar structure with the diameter size of 500 um. So we have selected the Su-8 photo-resist and modified lithography process to manufacture the pillar structure with height above the $500{\mu}m$. Simultaneously, we tried to make a comparative study to use ceramic bulk - polymer structure In this paper, we will report the process and properties of micro pillar structure based on the PMN-PZT ($Pb(Mg_{1/3}Nb_{2/3})O_3-PbZrTiO_3$) materials. Finally, We will propose a method for generating electrical energy with a piezoelectric element using vibration, an energy source can be obtained from the "clean" energy.

미세 박판 성형 특성에 대한 실험적 연구 (An Experimental Approach of Milli-Structure Sheet Metal Forming)

  • 구태완;강범수
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2001년도 춘계학술대회논문집A
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    • pp.471-476
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    • 2001
  • Milli-structure components ate classified as a component group whose size is between macro and micro scales, that is, about less than 20mm and larger than 1mm. The forming of these components has a typical phenomenon of bulk deformation with thin sheets because of the forming size. In this study, milli-structure rectangular cup drawing is analyzed and measured using the finite element method and experiment. Generally, milli-structure containers or cases like cellular phone vibrator consist of rectangular-shaped drawing to save installation space. A systematic approach is established for the design and the experiment of the forming processes for rectangular milli-structure cases. To verify the simulation results, the experimental investigations were also carried out on a real industrial product. The numerical analysis by FEM shows good agreement with the experimental results in view of the deformation shape of the product.

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Initial Growth Mode and Nanostructure of Bulk Heterojunction Layers in Planar Type Metal Pthanlocyanine Molecules

  • Kim, Hyo-Jung;Kima, Ji-Whan;Lee, Hyun-Hwi;Lee, Byeon-Du;Kim, Jang-Joo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.162-162
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    • 2012
  • ZnPc and CuPc molecules stacked similar way in the film, but showed different growth modes in thermal evaporation. The distribution of CuPc crystals did not change by the film thickness, whereas the distribution of ZnPc became random as the increase of the film thickness. The disc type nanograins of CuPc were quite regularly distributed at the initial growth regime and the regular distribution of nanograins was kept during the film growth. On the other hand, ZnPc consisted in ellipsoid shaped nanograins and the distribution of nanograins was not regular in the initial growth regime. The irregular distribution of nanograins changed to the regular mode at the later growth regime by showing structure factor in GISAXS measurement. The different initial nanograin distribution in ZnPc and CuPc was related to the different nanostructure in the mixed layer with C60 to form the bulk heterojunction.

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Wire-woven Bulk Kagome 의 파손 메커니즘 분석 (Analysis of Failure Mechanism for Wire-woven Bulk Kaogme)

  • 이병곤;최지은;강기주;전인수
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2007년도 춘계학술대회A
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    • pp.1690-1695
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    • 2007
  • Lightweight metallic truss structures with open, periodic cell are currently being investigated because of their multi-functionality such as thermal management and load bearing. The Kagome truss PCM has been proved that it has higher resistance to plastic buckling, more plastic deformation energy and lower anisotropy than other truss PCMs. The subject of this paper is an examination of the failure mechanism of Wire woven Bulk Kagome(WBK). To address this issue, the out-of-plane compressive responses of the WBK has been measured and compared with theoretical and finite element (FE) predictions. For the experiment, 2 multi-layered WBK are fabricated and 3 specimens are prepared. For the theoretical analysis, the brazed joints of each wire in WBK are modeled as the pin-joint. Then, the peak stress of compressive behavior and elastic modulus are calculated based on the equilibrium equation and energy method. The mechanical structure with five by five cells on the plane are constructed is modeled using the commercial code, PATRAN 2005. and the analysis is achieved by the commercial FE code ABAQUS version 6.5 under the incremental theory of plasticity.

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SOI NMOSFET을 이용한 Photo Detector의 특성 (Properties of Photo Detector using SOI NMOSFET)

  • 김종준;정두연;이종호;오환술
    • 한국전기전자재료학회논문지
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    • 제15권7호
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    • pp.583-590
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    • 2002
  • In this paper, a new Silicon on Insulator (SOI)-based photodetector was proposed, and its basic operation principle was explained. Fabrication steps of the detector are compatible with those of conventional SOI CMOS technology. With the proposed structure, RGB (Read, Green, Blue) which are three primary colors of light can be realized without using any organic color filters. It was shown that the characteristics of the SOI-based detector are better than those of bulk-based detector. To see the response characteristics to the green (G) among RGB, SOI and bulk NMOSFETS were fabricated using $1.5\mu m$ CMOS technology and characterized. We obtained optimum optical response characteristics at $V_{GS}=0.35 V$ in NMOSFET with threshold voltage of 0.72 V. Drain bias should be less than about 1.5 V to avoid any problem from floating body effect, since the body of the SOI NMOSFET was floated. The SOI and the bulk NMOSFETS shown maximum drain currents at the wavelengths of incident light around 550 nm and 750 nm, respectively. Therefore the SOI detector is more suitable for the G color detector.

P-type Skutterudite 열전소재의 열전도도 제어 연구 (Research for Controlled Thermal Conductivity of p-Type Skutterudite Materials)

  • 손근식;최순목
    • 한국전기전자재료학회논문지
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    • 제29권11호
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    • pp.671-675
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    • 2016
  • Skutterudite materials show PGEC (phonon glass electron crystal) characteristics which is an optimal strategy for designing high performance thermoelectric materials. Now two methods are in parallel to control thermal conductivity of skutterudites, a rattler-atoms doping method and a process for nanostructured bulk materials. Amount of rattler atoms in p-type skutterudite are depends on a Fe/Co ratio of matrix, and the optimal Fe/Co ratio has been reported about from 3:1 to 3.5:0.5 in $R(Fe,Co)_4Sb_{12}$ structure. In this paper, our discussion for rattler doping research was concentrated on double-rattler systems and DD-doped systems in p-type skutterudites. A melt spinning precess combined with high energy ball milling were suggested as a strategy for nanostructured bulk materials with PGEC (phonon glass electron crystal) characteristics in p-type skutterudites.

CMOS Microcontroller IC와 고밀도 원형모양SOI 마이크로센서의 단일집적 (A Monolithic Integration with A High Density Circular-Shape SOI Microsensor and CMOS Microcontroller IC)

  • 이명옥;문양호
    • 전기전자학회논문지
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    • 제1권1호
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    • pp.1-10
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    • 1997
  • It is well-known that rectangular bulk-Si sensors prepared by etch or epi etch-stop micromachining technology are already in practical use today, but the conventional bulk-Si sensor shows some drawbacks such as large chip size and limited applications as silicon sensor device is to be miniaturized. We consider a circular-shape SOI(Silicon-On-Insulator) micro-cavity technology to facilitate multiple sensors on very small chip, to make device easier to package than conventional sensor like pressure sensor and to provide very high over-pressure capability. This paper demonstrates the cross-functional results for stress analyses(targeting $5{\mu}m$ deflection and 100MPa stress as maximum at various applicable pressure ranges), for finding permissible diaphragm dimension by output sensitivity, and piezoresistive sensor theory from two-type SOI structures where the double SOI structure shows the most feasible deflection and small stress at various ambient pressures. Those results can be compared with the ones of circular-shape bulk-Si based sensor$^{[17]}. The SOI micro-cavity formed the sensors is promising to integrate with calibration, gain stage and controller unit plus high current/high voltage CMOS drivers onto monolithic chip.

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The Interaction of Hydrogen Atom with ZnO: A Comparative Study of Two Polar Surfaces

  • Doh, Won-Hui;Roy, Probir Chandra;Kim, Chang-Min
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.249-249
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    • 2012
  • The interaction of hydrogen with ZnO single crystal surfaces, ZnO(0001) and ZnO(000-1), has been investigated using a temperature programmed desorption (TPD) technique. Both surfaces do not interact with molecular hydrogen. When the ZnO(0001) is exposed to atomic hydrogen at 370 K, hydrogen is adsorbed in the surface and desorption takes place at around 460 K and 700 K. In ZnO(000-1), the desorption peaks are observed at around 440 K and 540 K. In both surfaces, as the atomic hydrogen exposure is further increased, the intensity of the low-temperature peak reaches maximum but the intensity of the high-temperature peak keeps increasing. In ZnO(000-1), the existence of hydrogen bonding to the surface O atoms and the bulk hydrogen has been confirmed by using X-ray photoelectron spectroscopy (XPS). When the Zn(0001) surface is exposed to atomic hydrogen at around 200 K, a new $H_2$ desorption peak has been observed at around 250 K. The intensity of the desorption feature at 250 K is much greater than that of the desorption feature at 460 K. This low-temperature desorption feature indicates hydrogen is bonded to surface Zn atoms. We will report the effect of the ZnO structure on the adsorption and bulk diffusion of hydrogen.

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표면효과를 고려한 박막구조의 멀티스케일 해석 (Multi-scale Analysis of Thin Film considering Surface effects)

  • 최진복;정광섭;조맹효
    • 한국전산구조공학회:학술대회논문집
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    • 한국전산구조공학회 2007년도 정기 학술대회 논문집
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    • pp.427-432
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    • 2007
  • In general, the response of bulk material is independent of its size when it comes to considering classical elasticity theory. Because the surface to bulk ratio of the large solids is very small, the influence of surface can be negligible. But the surface effect plays important role as the surface to bulk ratio becomes larger, that is, the contribution of the surface effect must be considered in nano-size elements such as thin film or beam structure. Molecular dynamics computation has been a conventional way to analyze these ultra-thin structures but this method is limited to simulate on the order of $10^6-10^8$ atoms for a few nanoseconds, and besides, very time consuming. Analysis of structures in submicro to micro range(thin-film, wire etc.) is difficult with classical molecular dynamics due to the restriction of computing resources and time. Therefore, in this paper, the continuum-based method is considered to simulate the overall physical and mechanical properties of the structures in nano-scale, especially, for the thin-film.

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