• Explosives and Blasting
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• v.25 no.2
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• pp.61-70
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• 2007

Korean large limestone mines started to employ bulk emulsion explosives to improve the productivity in early 2000s. As the application of the bulk emulsion explosives became common in the mid 2000s, the bulk emulsion application increases overall performance but it tends to decrease the moving and heaving because it lacks in gas volume and heat energy. Therefore, the chemical gassing technique was introduced to improve the blasting efficiency of the existing bulk emulsion explosives. The chemical gassing is a technique to replacing GMB(Glass Micro Balloon), which is used for a sensitizer, with gassing agent to chemically sensitize it. This paper introduces the case of successful application of chemical gassing in a Korean large limestone mine. We also compared and evaluated the blast and work efficiency between bulk emulsion GMB & gassing agent (chemical gassing). The results indicate that the replacement of GMB with gassing agent improved fragmentation in the upper part and toe of a bench as well as moving efficiency of the material.

• Progress in Superconductivity and Cryogenics
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• v.24 no.3
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• pp.47-51
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• 2022

With the innovative development of bio, pharmaceutical, and semiconductor technologies, it is essential to demand a next-generation transfer system that minimizes dust and vibrations generated during the manufacturing process. In order to develop dust-free and non-contact transfer systems, the high temperature superconductor (HTS) bulks have been applied as a magnet for levitation. However, sintered HTS bulk magnets are limited in their applications due to their relatively low critical current density (J_c) of several kA/cm² and low mechanical properties as a ceramic material. In addition, during cooling to cryogenic temperatures repeatedly, cracks and damage may occur by thermal shock. On the other hand, the bulk magnets made by stacked HTS tapes have various advantages, such as relatively high mechanical properties by alternate stacking of the metal and ceramic layer, high magnetic levitation performance by using coated conductors with high J_c of several MA/cm², consistent superconducting properties, miniaturization, light-weight, etc. In this study, we tried to fabricate HTS tapes stacked bulk magnets with 60 mm × 60 mm area and various numbers of HTS tape stacked layers for magnetic levitation. In order to examine the levitation forces of bulk magnets stacked with HTS tapes from 1 to 16 layers, specialized force measurement apparatus was made and adapted to measure the levitation force. By increasing the number of HTS tapes stacked layers, the levitation force of bulk magnet become larger. 16 HTS tapes stacked bulk magnets show promising levitation force of about 23.5 N, 6.538 kPa at 10 mm of levitated distance from NdFeB permanent magnet.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.76-79
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• 2000

The $Ba(Zn_{1/3}Ta_{2/3})O_3$ ceramics were prepared by conventional mixed oxide method. The structural properties of the BZT ceramics with the sintering temperature were investigated by XRD, SEM. The BZT ceramics have a complex-perovskite structure. The BZT ceramics sintered at $1550^{\circ}C$ had a superstructure plane of BZT(100). Increasing the sintering temperature, the bulk density and ordering were increased. The bulk density of the BZT ceramics sintered at $1550^{\circ}C$ was $7.50[g/cm^3]$. Increasing the sintering temperature, the average grain size were increased and pore were decreased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.2
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• pp.90-93
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• 2018

This aim of this study was to develop a process for creating bulk single-crystal YBaCuO superconductors in a high magnetic field. To support the bulk unidirectional growth of $YBa_2Cu_3O_{7-y}$, $SmBa_2Cu_3O_{7-y}$ seeds were planted inside YBaCuO composites and samples were produced by melting, enabling the growth of two YBaCuO superconductors. Due to the magnetism generated inside the superconductor of the upper sample, the magnetization inside the superconducting single crystals was evenly distributed, the sharpness of the induced magnetic force was improved, and the superconducting magnetization were significantly improved. This approach is widely applicable for the production of superconducting wires and current leads used for DC power breakers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.58-62
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• 1995

Thermally stimulated currents have been measured to investigate the trap characteristics of the MONOS structures with the tunneling oxide layer of 27${\AA}$ thick nitride layer of 73${\AA}$ thick and blocking oxide layer of 40${\AA}$ thick. By changing the write-in voltage and the write-in temperature, peaks of the I-T characteristic curve due to the nitride bulk traps and the blocking oxide-nitride interface traps ware separated from each other experimentally. The results indicate that the nitride bulk traps are distributed spatially at a single energy level and the blocking oxide-nitride interface traps are distributed energetically at interface.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.201-201
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• 2006

In this study the glass transition temperature in thin polymer films has been studied. Ellipsometry has been used to measure $T_{g}$ of thin film as a function of film thickness. Empirical equation has been proposed to fit the measured $T_{g}$ pattern with thickness. Also, a continuous multilayer model was proposed and derived to describe the effect of surface on the observed $T_{g}$ reduction in thin films, and the depth-dependent $T_{g}$ profile was obtained. These results showed that $T_{g}$ at the top surface was much lower than the bulk $T_{g}$ and gradually approached the bulk $T_{g}$ with increasing distance from the edge of the film. The model and equation were modified to apply for the polymer coated on the strongly favorable substrate and the freely standing film.

• Transactions of the Korean hydrogen and new energy society
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• v.7 no.1
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• pp.39-44
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• 1996

The discharge capacity of V-Ti-Ni(V-rich) metal hydride electrode during the charge-discharge cycling was investigated in KOH electrolyte. All electrodes were degraded within 25 cycles. To investigate the cause of the degradation phenomena impedance measurements were performed by using E.I.S(electrochemical impedance spectroscopy). The surfaces of the degraded electrodes were examined by Auger electron spectroscopy (AES). It was observed that all electrodes were covered with oxygen from the surface to the bulk, titanium was enriched near surface, and vanadium was dissolved from the surface to the bulk.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1077-1079
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• 2003

This paper describes the development of bulk acoustic wave (BAW) resonators using a PolyVinyliDene Fluoride (PVDF). The resonators have an air gap between a substrate for acoustic isolation without surface micromachining. We measured the resonance frequency and the input reflection coefficient (S$\sub$11/) of resonators using vector network analyzer. The fundamental resonance in this experimental result was measured at 1.4 ㎓ with a return loss of -23.2 ㏈. We can confirm a possibility of resonator application as using a PVDF because it can fabricate the resonator without etching process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1039-1044
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• 2002

Film Bulk Acoustic Resonator (FBAR) using thin piezoelectric films can be made as monolithic integrated devices with compatibility to semiconductor process, leading to small size, low cost and high Q RF circuit elements with wide applications in communications area. This paper presents an MMIC compatible suspended FBAR using SOI micromachining. It is possible to make a single crystal silicon membrane using a SOI wafer In fabricating active devices, SOI wafer offers advantage which removes the substrate loss. FBAR was made on the 12㎛ silicon membrane. Electrode and Piezoelectric materials were deposited by RF magnetron sputter. The maximum resonance frequency of FBAR was shown at 2.5GHz range. The reflection loss, K$^2$$\_$eff/, Q$\_$serise/ and Q$\_$parallel/ in that frequency were 1.5dB, 2.29%, 220 and 160, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.358-361
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• 2002

체적파 박막형 공진기 (FBAR: Film Bulk Acoustic wave Resonator)소자를 제조하여, 박막의 c축 우선 배향성을 조절하는 것이 FBAR 소자 특성을 확인하였다. 본 연구에서는 MEMS 공정에 의해 Membrane 구조의 FBAR(Film Bulk Acoustic wave Resonator) 소자를 구현하고자 하였다. 이를 위해 Si 기판을 Back-etching 하여 membrane 구조를 제작하였고 압전층으로 ZnO을 Sputtering 공정에 의해 증착 후, 공정 조건에 따른 우선 배향성을 관찰하였다.