• Macromolecular Research
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• v.8 no.2
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• pp.59-65
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• 2000

We simulated the conformational changes of polymethacrylates which have side chains with different lengths (methyl and butyl) by molecular dynamics simulation technique. Bulk states of atactic amorphous polymers relaxed at a higher temperature were generated. The chain behaviors of polymethacrylates were investigated upon varying temperatures. Molecular structural information was then obtained by characterizing radial distribution function(RDF), mean square displacement, self diffusion constant, and Connolly surfaces, among others. The estimated self diffusion constants and RDF values of PMMA and PBMA were found to be in good agreement with our expectation in view of the chain flexibility.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.05a
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• pp.258-262
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• 2008

Micro forming is a suited technology to manufacture very small metallic parts(several $mm{\sim}{\mu}m$). In this study, the micro forming property was studied, using Al5083 superplastic alloy with micro grain, suitable for the micro forming process and Zr-BMG amorphous with pseudo-superplastic phenomena in the supercooled liquid state. Micro forming experiments under stastic load status showed that distortion by slip and spin of the grain system and slip inside the grain was observed in the Al5083 superplastic alloy. In case of Zr-BMG, because there is no grain, the distribution of the forming property was similar to the load distribution between punch and metal.

• Journal of the Mineralogical Society of Korea
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• v.22 no.3
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• pp.249-259
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• 2009

The objective of this research was to find out the physical properties, such as dispersion and coagulation, of soil minerals depending on the types and concentrations of the cations in aqueous solution. Hwangto samples were obtained from 90 to 130 cm from surface at Jangdong-ri, Donggang-Myon, Naju, Chonnam Province. The clay fraction (< $2\;{\mu}m$) was separated by sedimentation method from the bulk soils. Both Hwangto and clay fractions, and the same samples after removal of amorphous and crystalline iron oxides were used in this experiment. The effect of 4 cations ($Na^+$, $K^+$, $Mg^{2+}$, $Ca^{2+}$) and their concentrations on settling speed and basal spacing of the minerals were observed to examine the physical properties of the soil and clay minerals. Hwangto mainly consisted of quartz, and the clay fractions consisted of kaolinite, illite, and vermiculite. The bulk soils contained 16.3 mg/kg of amorphous iron oxides and 436 mg/kg of crystalline iron oxides. Clay fractions were dispersed better than bulk soils due to their smaller particle size than that of the bulk samples in the aqueous solution. The bulk and clay samples were dispersed better when iron oxides were removed because of coating of minerals by the iron oxides. Clay minerals were settled faster as the charge and the concentration of cations added increased. The d-spacing of kaolinite and illite did not change when 4 types of cations were added. The d-spacing of vermiculite showed $14.04\;{\AA}$ when divalent cations were added while that of vermiculite showed $13.9\;{\AA}$ when monovalent cations were added. It may be attributed to the hydration radii of cations. This study indicated that both coating of iron oxides on minerals and types and concentrations of cations affect dispersion of minerals in solution and d-spacing of expanding clay minerals such as vermiculite.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.4
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• pp.726-732
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• 2007

We fabricated UV absorption functional $10{\sim}50nm-TiO_{2-x}/quartz$ structures layer using ALD (atomic layer deposition) method. We deposited $10nm-TiO_{2-x}$ layer on quartz substrate using ALD, and film thickness was determined by an ellipsometer. The others specimen thickness was controlled by ALD time lineally. We characterized controlling phase UV and visible optical property using an X-ray difractometer, a UV-VIS-IR spectrometer and a digital camera. $ALD-TiO_{2-x}$ layers were non-stoichiometric $TiO_{2-x}$ form and amorphous phases comparing with bulk $TiO_2$. While the conventional bulk $TiO_2$ had band gap of $3.0{\sim}3.2eV$ resulting in absorption edges at 380 nm and 415 nm, $ALD-TiO_{2-x}$ layers showed absorption edges at 197 nm and 250 nm. Therefore, our nano-thick $ALD-TiO_{2-x}$ was able to absorb shorter UV region and showed excellent transmittance in visible region. Our result implies that our newly proposed nano-thick $TiO_{2-x}$ using ALD process may improve transmittance in visible rays and be able to absorb shorter UV light effectively.

• Journal of Powder Materials
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• v.25 no.3
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• pp.246-250
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• 2018

In this study, we investigate the deformation behavior of $Hf_{44.5}Cu_{27}Ni_{13.5}Nb_5Al_{10}$ metallic glass powder under repeated compressive strain during mechanical milling. High-density (11.0 g/cc) Hf-based metallic glass powders are prepared using a gas atomization process. The relationship between the mechanical alloying time and microstructural change under phase transformation is evaluated for crystallization of the amorphous phase. Planetary mechanical milling is performed for 0, 40, or 90 h at 100 rpm. The amorphous structure of the Hf-based metallic glass powders during mechanical milling is analyzed using differential scanning calorimetry (DSC) and X-ray diffraction (XRD). Microstructural analysis of the Hf-based metallic glass powder deformed using mechanical milling reveals a layered structure with vein patterns at the fracture surface, which is observed in the fracture of bulk metallic glasses. We also study the crystallization behavior and the phase and microstructure transformations under isothermal heat treatment of the Hf-based metallic glass.

• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.55-57
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• 2017

Amorphous oxide thin film transistors (TFTs) were fabricated with 0.5 wt% silicon doped zinc tin oxide (a-0.5SZTO) thin film deposited by radio frequency (RF) magnetron sputtering. In order to investigate the effect of annealing treatment on the electrical properties of TFTs, a-0.5SZTO thin films were annealed at three different temperatures ($300^{\circ}C$, $500^{\circ}C$, and $700^{\circ}C$ for 2 hours in a air atmosphere. The structural and electrical properties of a-0.5SZTO TFTs were measured using X-ray diffraction and a semiconductor analyzer. As annealing temperature increased from $300^{\circ}C$ to $500^{\circ}C$, no peak was observed. This provided crystalline properties indicating that the amorphous phase was observed up to $500^{\circ}C$. The electrical properties of a-0.5SZTO TFTs, such as the field effect mobility (${\mu}_{FE}$) of $24.31cm^2/Vs$, on current ($I_{ON}$) of $2.38{\times}10^{-4}A$, and subthreshold swing (S.S) of 0.59 V/decade improved with the thermal annealing treatment. This improvement was mainly due to the increased carrier concentration and decreased structural defects by rearranged atoms. However, when a-0.5SZTO TFTs were annealed at $700^{\circ}C$, a crystalline peak was observed. As a result, electrical properties degraded. ${\mu}_{FE}$ was $0.06cm^2/Vs$, $I_{ON}$ was $5.27{\times}10^{-7}A$, and S.S was 2.09 V/decade. This degradation of electrical properties was mainly due to increased interfacial and bulk trap densities of forming grain boundaries caused by the annealing treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.320-320
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• 2014

Amorphous silicon alloy (a-Si) solar cells and modules have been receiving a great deal of attention as a low-cost alternate energy source for large-scale terrestrial applications. Key to the achievement of high-efficiency solar cells using the multi-junction approach is the development of high quality, low band-gap materials which can capture the low-energy photons of the solar spectrum. Several cell designs have been reported in the past where grading or buffer layers have been incorporated at the junction interface to reduce carrier recombination near the junction. We have investigated profiling the composition of the a-SiGe alloy throughout the bulk of the intrinsic material so as to have a built-in electrical field in a substantial portion of the intrinsic material. As a result, the band gap mismatch between a-Si:H and $a-Si_{1-x}Ge_x:H$ creates a barrier for carrier transport. Previous reports have proposed a graded band gap structure in the absorber layer not only effectively increases the short wavelength absorption near the p/i interface, but also enhances the hole transport near the i-n interface. Here, we modulated the GeH4 flow rate to control the band gap to be graded from 1.75 eV (a-Si:H) to 1.55 eV ($a-Si_{1-x}Ge_x:H$). The band structure in the absorber layer thus became like a U-shape in which the lowest band gap was located in the middle of the i-layer. Incorporation of this structure in the middle and top cell of the triple-cell configuration is expected to increase the conversion efficiency further.

• Journal of the Korean Applied Science and Technology
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• v.22 no.4
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• pp.306-314
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• 2005

In this study, spherical $pre-BaTiO_3$ particles are prepared by gelation and aging process in autoclave without catalysts. The (Ba-Ti) gel used as a starting material was prepared by aging mixtures of titanyl acylate with barium acetate aqueous solution([glacial acetic acid (AcOH)]/[titanium isopropoxide (TIP)] 4, [barium acetate]/[TIP] 1) at $45^{\circ}C$ for 48hrs. XRD and SEM results for the (Ba-Ti) gel sample at aging process showed that the gel was formed via aggregation of the fine particles. It seems to be the primary particles of bulk (Ba-Ti) gel amorphous, but the spatial arrangement of barium and titanium in the (Ba-Ti) gel is similar to that in crystalline $BaTiO_3$ particles. From XRD and FT-IR. spectroscopy analysis it was found that the crystal structure of the prepared particles continuously transformed from amorphous to tetragonal as the calcination temperature increased, and crystallized spherical cubic and tetragonal $BaTiO_3$ powder obtained at the very low calcination temperature between $500^{\circ}C$ and $900^{\circ}C$ after 1hrs of heat treatment respectively. According to BET analysis result, final particle have pore structure of ink bottle shape which is produced by aggregation of fine spherical particles with surface area of $280m^2/g$ and average pore size of 130nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.466-468
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• 2012

Amorphous InGaZnO (${\alpha}$-IGZO) thin-film transistors (TFTs) are are very promising due to their potential use in thin film electronics and display drivers [1]. However, the stability of AOS-TFTs under the various stresses has been issued for the practical AOSs applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the ${\alpha}$-IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of ${\alpha}$-IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of ${\alpha}$-IGZO thin film. In this paper, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in ${\alpha}$-IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of ${\alpha}$-IGZO TFTs by this new deposition method.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.6
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• pp.297-301
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• 2006

In the present work, we investigate the characteristics of new composition material, chalcogenide $Ge_1Se_1Te_2$ material in order to overcome the problems of conventional PRAM devices. The Tc of $Ge_1Se_1Te_2$ bulk was measured $231.503^{\circ}C$ with DSC analysis. For static DC test mode, at low voltage, two different resistances are observed. depending on the crystalline state of the phase-change resistor. In the first sweep, the as-deposited amorphous $Ge_1Se_1Te_2$ showed very high resistance. However when it reached the threshold voltage(about 11.8 V), the electrical resistance of device was drastically reduced through the formation of an electrically conducting path. The phase transition between the low conductive amorphous state and the high conductive crystal]me state was caused by the set and reset pulses respectively which fed through electrical signal. Set pulse has 4.3 V. 200 ns. then sample resistance is $80\sim100{\Omega}$. Reset pulse has 8.6 V 80 ns, then the sample resistance is $50{\sim}100K{\Omega}$. For such high resistance ratio of $R_{reset}/R_{set}$, we can expect high sensing margin reading the recorded data. We have confirmed that phase change properties of $Ge_1Se_1Te_2$ materials are closely related with the structure through the experiment of self-heating layers.