• Smart Structures and Systems
• /
• 제20권5호
• /
• pp.637-640
• /
• 2017

The adoption of cladding panels as dissipation device is a sort of passive control "ante litteram" for residential and commercial buildings. This paper gives details on the current technology outlining the difference between buffer panels and cladding panels. The discussion of robustness and resilience of the resulting system is afforded. It is shown that the strength of such solution, originally related to economy and light weight, is mainly associated with the respect of the main robustness requisites, as well as the short time it requires for removal and replacement (resilience).

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2004년도 학술대회 논문집 정보 및 제어부문
• /
• pp.629-631
• /
• 2004

The proposed output buffer is presented for driving large-size LCD panels. This output buffer is designed by adding some simple circuitry to the conventional two-stage operational amplifier. The proposed circuit is simulated in a high-voltage 0.35um CMOS process with HSPICE. The simulated result is more improved settling time than that of conventional one.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
• /
• pp.133-136
• /
• 2000

A new Op-Amp output buffer is presented for driving large-size LCD panels. The proposed Op-Amp is designed by combining a common source and a common drain amplifier to have a high slew rate and to minimize the quiescent current. The proposed circuits are simulated in a high-voltage 0.6${\mu}{\textrm}{m}$ CMOS process, dissipates only 20${\mu}{\textrm}{m}$ static current, and have 83dB open-loop DC gain and 60$^{\circ}$phase margin.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
• /
• pp.964-967
• /
• 2005

The search for stable electron transporters and hole injectors has become particularly intense over the last 18 months as OLED manufacturers are poised to start production of OLED panels. We report here a proprietary electron transporter (E246), which reduces the operating voltage, increases the efficiency and the lifetime of OLEDs made of fluorescent or phosphorescent systems when compared with Alq3 as an electron transporter. We also report a novel proprietary hole injector (buffer, E9363) which also reduces the operating voltage, increases the efficiency and doubles the lifetime compared to CuPC. These two materials are now available commercially for display manufacturers.

• 전기전자학회논문지
• /
• 제14권2호
• /
• pp.51-57
• /
• 2010

대형 TFT LCD 판넬의 감마보정전압을 구동하기 위한 레일-투-레일 고전압 CMOS 완충 증폭기를 제안하였다. 이 회로는 단일 전압하에서 동작하고 18V 전압원에서 0.5mA 의 전류소비특성을 나타내며 8비트/10비트 고해상도 TFT LCD 판넬의 감마보정 전압 구동을 위하여 설계하였다. 이 회로는 높은 slew rate, 0.5mA의 정적 전류특성을 나타내며 1k$\Omega$의 저항성/용량성 부하구동 능력을 가지고 있다. 또한 넓은 출력 공급범위를 지니며, 5mA의 출력 정전류를 내보낼 경우 50mV미만의 옵셋전압 특성을 가진다. 또한, 용량성 부하 구동시 입력기준 옵셋전압이 2.5mV 미만인 좋은 특성을 나타낸다. 본 논문에서는 넓은 스윙입력범위와 출력 동작 범위을 얻기 위해 전류미러형 n-채널 차동증폭기, p-채널 차동증폭기, AB-급 푸쉬-풀 출력단, 히스테리시스 비교기를 사용한 입력레벨 검출기 등을 사용하였다. 제안된 회로는 고전압 디스플레이 구동 IC에 사용하기 위해 0.18um 18V 고전압 CMOS 공정기술에 의해 제작되었다. 제안된 회로는 8~18V의 공급 전압 범위에서 동작한다.

• 한국수산과학회지
• /
• 제53권3호
• /
• pp.443-450
• /
• 2020

No established method can be used to select effective antibiotics in antibiotic susceptibility tests for fish bacterial pathogens quickly and accurately. Here, we established the optimal conditions for determining the minimal inhibitory concentration (MIC) of major fish bacterial pathogens (Streptococcus spp., Edwardsiella tarda, Vibrio spp., Aeromonas spp., and Pseudomonas spp.) using the KRAQ1 and CAMPY2 panels. The MIC panel used 18 antibiotics of two types and we conducted experiments to establish the optimal culture medium and temperature for each species. The optimal conditions for incubating Streptococcus spp. were in cation-adjusted Mueller-Hinton broth with TES buffer (CAMHBT) at 28℃, using 5% lysed horse blood (LHB) as recommended by the Clinical Laboratory Standards Institute. For Vibrio spp., the optimal culture conditions were 28℃ in CAMHBT supplemented with 1% NaCl. The optimal conditions for culturing E. tarda, Aeromonas spp., and Pseudomonas spp. were in CAMHBT at 28℃.

• 한국항행학회논문지
• /
• 제19권1호
• /
• pp.66-73
• /
• 2015

본 논문에서는 사물인터넷 환경에서 저전력 동작과 에너지 하비스팅이 가능한 스마트 비디오 디바이스의 구조와 에너지 제어모델을 제안한다. 스마트 비디오 디바이스는 프로세서, 이미지 센서, 비디오 코덱, 네트워크 제어기 모듈들로 구성된다. 제안하는 에너지 제어 모델은 이미지 센싱, 비디오 부호화, 전송 시 에너지 소비량 출력과 태양전지를 통한 하비스팅 에너지 입력을 이용하여 에너지 버퍼인 배터리 입출력 관계로 정의된다. 화면률, 양자화 계수, 프로세서 동작 주파수를 에너지 레벨과 기능 블록들의 에너지 소비 제어 계수로 사용한다. 제안하는 에너지 제어 모델은 스마트폰 기반으로 에너지 제어 계수들에 따른 에너지 소비량 측정을 통해 검증되었으며, 에너지 하비스팅 기능을 이용한 지속 가능한 스마트 비디오 디바이스 설계에 활용될 수 있다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.364.2-364.2
• /
• 2014

Magnesium oxide (MgO) thin films have attracted great scientific and technological interest in recent decades. Because of its distinguished properties such as a wide band gap (7.2 eV), a low dielectric constant (9.8), a low refractive index, an excellent chemical, and thermal stability (melting point=$2900^{\circ}C$), it is widely used as inorganic material in diverse areas such as fire resistant construction materials, optical materials, protective layers in plasma display panels, buffer layers of multilayer electronic/photonic devices, and perovskite ferroelectric thin films. Precursor used in the ALD requires volatility, stability, and low deposition temperature. Precursors using a heteroleptic ligands with different reactivity have advantage of selective reaction of the heteroleptic ligands on substrate during ALD process. In this study, we have synethesized new heteroleptic magnesium precursors ${\beta}$-diketonate and aminoalkoxide which have been widely used for the development of precursor because of the excellent volatility, chelating effects by increasing the coordination number of the metal, and advantages to synthesize a single precursor. A newly-synthesized Mg(II) precursor was adopted for growing MgO thin films using ALD.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.183-184
• /
• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2001년도 추계학술발표회 초록집
• /
• pp.35-35
• /
• 2001

agnesium Oxide (MgO) with a NaCI structure is well known to exhibit high secondary electron emission, excellent high temperature chemical stability, high thermal conductance and electrical insulating properties. For these reason MgO films have been widely used for a buffer layer of high $T_c$ superconducting and a protective layer for AC-plasma display panels to improve discharge characteristics and panel lifetime. Up to now MgO films have been synthesized by lE-beam evaporation, Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapor Deposition (MOCVD), however there have been some limitations such as low film density and micro-cracks in films. Therefore magnetron sputtering process were emerged as predominant method to synthesis high density MgO films. In previous works, we designed and manufactured unbalanced magnetron source with high power density for the deposition of high quality MgO films. The magnetron discharges were sustained at the pressure of O.lmtorr with power density of $110W/\textrm{cm}^2$ and the maximum deposition rate was measured at $2.8\mu\textrm{m}/min$ for Cu films. In this study, the syntheses of MgO films were carried out by unbalanced magnetron sputtering with various $O_2$ partial pressure and specially target power densities, duty cycles and frequency using pulsed DC power supply. And also we investigated the plasma states with various $O_2$ partial pressure and pulsed DC conditions by Optical Emission Spectroscopy (OES). In order to confirm the relationships between plasma states and film properties such as microstructure and secondary electron emission coefficient were analyzed by X-Ray Diffraction(XRD), Transmission Electron Microscopy(TEM) and ${\gamma}-Focused$ Ion Beam (${\gamma}-FIB$).