• Smart Structures and Systems
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• v.20 no.5
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• pp.637-640
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• 2017

The adoption of cladding panels as dissipation device is a sort of passive control "ante litteram" for residential and commercial buildings. This paper gives details on the current technology outlining the difference between buffer panels and cladding panels. The discussion of robustness and resilience of the resulting system is afforded. It is shown that the strength of such solution, originally related to economy and light weight, is mainly associated with the respect of the main robustness requisites, as well as the short time it requires for removal and replacement (resilience).

• Proceedings of the KIEE Conference
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• 2004.11c
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• pp.629-631
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• 2004

The proposed output buffer is presented for driving large-size LCD panels. This output buffer is designed by adding some simple circuitry to the conventional two-stage operational amplifier. The proposed circuit is simulated in a high-voltage 0.35um CMOS process with HSPICE. The simulated result is more improved settling time than that of conventional one.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.133-136
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• 2000

A new Op-Amp output buffer is presented for driving large-size LCD panels. The proposed Op-Amp is designed by combining a common source and a common drain amplifier to have a high slew rate and to minimize the quiescent current. The proposed circuits are simulated in a high-voltage 0.6${\mu}{\textrm}{m}$ CMOS process, dissipates only 20${\mu}{\textrm}{m}$ static current, and have 83dB open-loop DC gain and 60$^{\circ}$phase margin.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.964-967
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• 2005

The search for stable electron transporters and hole injectors has become particularly intense over the last 18 months as OLED manufacturers are poised to start production of OLED panels. We report here a proprietary electron transporter (E246), which reduces the operating voltage, increases the efficiency and the lifetime of OLEDs made of fluorescent or phosphorescent systems when compared with Alq3 as an electron transporter. We also report a novel proprietary hole injector (buffer, E9363) which also reduces the operating voltage, increases the efficiency and doubles the lifetime compared to CuPC. These two materials are now available commercially for display manufacturers.

• Journal of IKEEE
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• v.14 no.2
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• pp.51-57
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• 2010

A CMOS rail-to-rail high voltage buffer amplifier is proposed to drive the gamma correction reference voltage of large TFT LCD panels. It is operating by a single supply and only shows current consumption of 0.5mA at 18V power supply voltage. The circuit is designed to drive the gamma correction voltage of 8-bit or 10-bit high resolution TFT LCD panels. The buffer has high slew rate, 0.5mA static current and 1k$\Omega$ resistive and capacitive load driving capability. Also, it offers wide supply range, offset voltages below 50mV at 5mA constant output current, and below 2.5mV input referred offset voltage. To achieve wide-swing input and output dynamic range, current mirrored n-channel differential amplifier, p-channel differential amplifier, a class-AB push-pull output stage and a input level detector using hysteresis comparator are applied. The proposed circuit is realized in a high voltage 0.18um 18V CMOS process technology for display driver IC. The circuit operates at supply voltages from 8V to 18V.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.53 no.3
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• pp.443-450
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• 2020

No established method can be used to select effective antibiotics in antibiotic susceptibility tests for fish bacterial pathogens quickly and accurately. Here, we established the optimal conditions for determining the minimal inhibitory concentration (MIC) of major fish bacterial pathogens (Streptococcus spp., Edwardsiella tarda, Vibrio spp., Aeromonas spp., and Pseudomonas spp.) using the KRAQ1 and CAMPY2 panels. The MIC panel used 18 antibiotics of two types and we conducted experiments to establish the optimal culture medium and temperature for each species. The optimal conditions for incubating Streptococcus spp. were in cation-adjusted Mueller-Hinton broth with TES buffer (CAMHBT) at 28℃, using 5% lysed horse blood (LHB) as recommended by the Clinical Laboratory Standards Institute. For Vibrio spp., the optimal culture conditions were 28℃ in CAMHBT supplemented with 1% NaCl. The optimal conditions for culturing E. tarda, Aeromonas spp., and Pseudomonas spp. were in CAMHBT at 28℃.

• Journal of Advanced Navigation Technology
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• v.19 no.1
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• pp.66-73
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• 2015

In this paper, an architecture of a perpetual smart video device and its energy control model for the internet of things (IoT) are proposed. The smart video device consists of a processor, an image sensor, a video codec, and a network controller. In the proposed energy control model, energy consumed by image sensing, video encoding, and transmission and energy harvested by solar panels are defined as an input and an output of a battery, an energy buffer. Frame rate, quantization parameter, and operating frequency of processor are defined as the energy control parameters, and these parameters control the input and the output energy of the energy buffer, finally control the energy left in the battery. The proposed energy control model is validated by the energy consumption measurement of the smart phone based platform for various combinations of energy control parameters, and can be used for the design of perpetual smart video device.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.364.2-364.2
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• 2014

Magnesium oxide (MgO) thin films have attracted great scientific and technological interest in recent decades. Because of its distinguished properties such as a wide band gap (7.2 eV), a low dielectric constant (9.8), a low refractive index, an excellent chemical, and thermal stability (melting point=$2900^{\circ}C$), it is widely used as inorganic material in diverse areas such as fire resistant construction materials, optical materials, protective layers in plasma display panels, buffer layers of multilayer electronic/photonic devices, and perovskite ferroelectric thin films. Precursor used in the ALD requires volatility, stability, and low deposition temperature. Precursors using a heteroleptic ligands with different reactivity have advantage of selective reaction of the heteroleptic ligands on substrate during ALD process. In this study, we have synethesized new heteroleptic magnesium precursors ${\beta}$-diketonate and aminoalkoxide which have been widely used for the development of precursor because of the excellent volatility, chelating effects by increasing the coordination number of the metal, and advantages to synthesize a single precursor. A newly-synthesized Mg(II) precursor was adopted for growing MgO thin films using ALD.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.35-35
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• 2001

agnesium Oxide (MgO) with a NaCI structure is well known to exhibit high secondary electron emission, excellent high temperature chemical stability, high thermal conductance and electrical insulating properties. For these reason MgO films have been widely used for a buffer layer of high $T_c$ superconducting and a protective layer for AC-plasma display panels to improve discharge characteristics and panel lifetime. Up to now MgO films have been synthesized by lE-beam evaporation, Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapor Deposition (MOCVD), however there have been some limitations such as low film density and micro-cracks in films. Therefore magnetron sputtering process were emerged as predominant method to synthesis high density MgO films. In previous works, we designed and manufactured unbalanced magnetron source with high power density for the deposition of high quality MgO films. The magnetron discharges were sustained at the pressure of O.lmtorr with power density of $110W/\textrm{cm}^2$ and the maximum deposition rate was measured at $2.8\mu\textrm{m}/min$ for Cu films. In this study, the syntheses of MgO films were carried out by unbalanced magnetron sputtering with various $O_2$ partial pressure and specially target power densities, duty cycles and frequency using pulsed DC power supply. And also we investigated the plasma states with various $O_2$ partial pressure and pulsed DC conditions by Optical Emission Spectroscopy (OES). In order to confirm the relationships between plasma states and film properties such as microstructure and secondary electron emission coefficient were analyzed by X-Ray Diffraction(XRD), Transmission Electron Microscopy(TEM) and ${\gamma}-Focused$ Ion Beam (${\gamma}-FIB$).