• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1993.10a
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• pp.50-53
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• 1993

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.4
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• pp.643-653
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• 2012

In this paper, we consider a clock tree synthesis technique (CTS) based on buffer insertion method in the multiple clock domain. We propose some detail techniques about the preparing items and the practical method for implementing CTS. We also propose a post processing after CTS implementation. Until now, the buffer insertion-based CTS technique has been widely used, and this paper discusses especially it's practical technique to be applied in the commercial fields to develop ASIC and SoC. CTS is very dependent on the used tool. We use Astro of Synopsys and propose the empirical and theoretical information of the detail techniques for implementing CTS using this tool. We expect that the proposed technique becomes to be good guidelines to backend designers.

• Journal of the Korean Ceramic Society
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• v.46 no.6
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• pp.673-678
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• 2009

The effect of MgO buffer layer on the structural properties of sputter-grown ZnO thin film was investigated. Sapphire (0001) and Si (100) substrate were used for the growth and MgO buffer layer was inserted between ZnO thin film and the substrate. X-ray diffraction pattern indicated that enhanced crystallinity in the ZnO thin film grown was achieved by inserting very thin MgO buffer layer, regardless of the substrate type. The strain in the ZnO thin film could also be controlled by the insertion of the MgO buffer layer, and tendency of the strain was strongly dependent on the substrate type.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.577-580
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• 2004

Our paper focus on crosstalk noise problem, especially crosstalk glitch that occurs when victim is stable state and aggressor is transitive state. This generated glitch weigh with the functional reliability if the glitch is considerable. In this paper, we use buffer insertion, down sizing, buffer insertion with up-sizing methods concurrently. These methodologies use filtering effects which gates that have bigger noise margin than glitch width eliminates glitch. In addition, we do limited optimization in boundary of node's slack. Therefore, the operated node's changes are for nothing in other node's slack.

• Journal of Sensor Science and Technology
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• v.16 no.3
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• pp.240-245
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• 2007

AlN thin film for SAW filter application was deposited on (100) silicon, sapphire, $Si_{3}N_{4}$/Si, and $Al_{2}O_{3}$/Si substrates by reactive magnetron sputtering method, respectively. The structural characteristics were dependent on the structure of substrates. Scanning Electron Microscope (SEM), X-ray Diffraction (XRD) and Atomic Force Microscope (AFM) have been used to analyze structural properties and preferred orientation of AlN thin films. Preferred orientation and SAW characteristic of AlN were improved by insertion of $Al_{2}O_{3}$ buffer layer. Insertion loss of SAW devices using AlN/Si and AlN/$Al_{2}O_{3}$/Si were about 33.27 dB and 30.20 dB, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.583-586
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• 2009

A 14.1" XGA (1024${\times}$768) LCD panel with Integrated Black Data Insertion (IBDI) has been world first developed successfully based on the integrated amorphous Silicon TFT gate driver which we previously introduced. The notable features compared with the conventional integrated a-Si TFT gate driver circuit are that the circuit consists of Dual buffer, Carry buffer structure, and Q-node cross charging for stable signal scanning characteristic and prevention of coupling between signal lines.

• Journal of Electrical Engineering and information Science
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• v.2 no.6
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• pp.28-35
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• 1997

A new approach concurrent transistor sizing and buffer insertion for low power optimization is proposed in this paper. The method considers the tradeoff between upsizing transistors and inserting buffers and chooses the solution with the lowest possible power and area cost. It operates by analyzing the feasible region of the cost-delay curves of the unbuffered and buffered circuits. As such the feasible region of circuits optimized by our method is extended to encompass the envelop of cost-delay curves which represent the union of the feasible regions of all buffered ad unbuffered versions of the circuit. The method is efficient and tunable in that optimality can be traded for compute time and as a result it can in theory near optimal results.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.379-379
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• 2010

Recent technical advances in OLEDs (organic light emitting devices) requires more and more the improvement in low operation voltage, long lifetime, and high luminance efficiency. Inverted top emission OLEDs (ITOLED) appeared to overcome these problems. This evolved to operate better luminance efficiency from conventional OLEDs. First, it has large open area so to be brighter than conventional OLEDs. Also easy integration is possible with Si-based driving circuits for active matrix OLED. But, a proper buffer layer for carrier injection is needed in order to get a good performance. The buffer layer protects underlying organic materials against destructive particles during the electrode deposition and improves their charge transport efficiency by reducing the charge injection barrier. Hexaazatriphenylene-hexacarbonitrile (HAT-CN), a discoid organic molecule, has been used successfully in tandem OLEDs due to its high workfunction more than 6.1 eV. And it has the lowest unoccupied molecular orbital (LUMO) level near to Fermi level. So it plays like a strong electron acceptor. In this experiment, we measured energy level alignment and hole current density on inverted OLED structures for hole injection. The normal film structure of Al/NPB/ITO showed bad characteristics while the HAT-CN insertion between Al and NPB greatly improved hole current density. The behavior can be explained by charge generation at the HAT-CN/NPB interface and gap state formation at Al/HAT-CN interface, respectively. This result indicates that a proper organic buffer layer can be successfully utilized to enhance hole injection efficiency even with low work function Al anode.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.14 no.4
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• pp.173-179
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• 2014

Today, a surgery for cataract of Korean society frequently come to operation. A method for treating cataracts have been developed in various ways. Widely used method is a method to use the artificial lens and replace it with the existing lens. The surgery can be inserted exactly according to the angle and points that are calculated in advance in the intraocular lens insertion is important. However, The lens insertion point can delete or blur the display due to such factors as foreign material coming out of the eye during surgery. Therefore, The lens insertion point needs a method of tracking the image processing by receiving the camera images in real time display method. In this paper, we propose a feature point tracking method by using template matching and buffer. a simulation results show that our ideas can track a feature point of the intraocular lens insertion.

• Current Applied Physics
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• v.18 no.12
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• pp.1592-1599
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• 2018

The present study deals with the effect of dual cathode buffer layer (CBL) on the performance of bilayer of 4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl)benzenamine] (TAPC) and fullerene (C70)-based organic solar cell (OSC) with low donor concentration. OSC devices with CBLs have been fabricated using thermal vapor deposition technique. We report the use of lithium fluoride (LiF) and molybdenum trioxide ($MoO_3$) as CBLs. The insertion of LiF between C70 and aluminium (Al) electrode enhances the power conversion efficiency (PCE) of device from 1.89% to 2.47% but quenching of photogenerated excitons is observed at interface of C70 and LiF layers. Incorporation of $MoO_3$ between LiF and Al electrode further enhances PCE of device to 3.51%. This has also improved the material quality and device properties, by preventing the formation of gap states and diminishing exciton quenching.