• 제목/요약/키워드: buffer insertion

검색결과 63건 처리시간 0.026초

다중 클록 영역의 SoC를 위한 효율적인 버퍼삽입 방식의 CTS에 대한 고려 (Consideration of CTS using Efficient Buffer Insertion for SoC in Multiple Clock Domain)

  • 서영호;최의선;김동욱
    • 한국정보통신학회논문지
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    • 제16권4호
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    • pp.643-653
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    • 2012
  • 본 논문에서는 버퍼 삽입 방법에 기반한 다중 클록 영역에서의 클록 트리 합성(clock tree synthesis, CTS) 기법에 대해서 논의한다. CTS를 수행하는데 있어서 준비해야하는 사항들과 실제적인 CTS 수행 방법들에 대해서 세부적인 기술들을 제안한다. 또한 CTS 수행 이후의 후처리 과정에 대해서도 제안한다. 버퍼 삽입 기반의 CTS는 기존에도 사용되는 방법인데 본 논문은 ASIC 및 SoC 상용 작업 현장에서 사용될 수 있는 실전적인 기법들에 대해서 논의하고자 한다. CTS는 사용되는 툴에 매우 의존적인데 본 논문은 Synopsys의 Astro를 대상으로 하였고, 이 툴을 이용하여 CTS를 수행하기 위한 세부적인 기술들에 대해서 이론을 바탕으로 경험적이고 고급적인 기법들을 제안한다. 본 논문을 통해 제안된 기법들은 많은 백앤드(backend) 설계자들에게 좋은 가이드가 될 것으로 기대한다.

스퍼터링법으로 증착된 산화아연 박막의 구조적 성질에 대한 산화마그네슘 완충층의 효과 연구 (Effect of MgO Buffer Layer on the Structural Properties of Sputter-grown ZnO Thin Film)

  • 임영수
    • 한국세라믹학회지
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    • 제46권6호
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    • pp.673-678
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    • 2009
  • The effect of MgO buffer layer on the structural properties of sputter-grown ZnO thin film was investigated. Sapphire (0001) and Si (100) substrate were used for the growth and MgO buffer layer was inserted between ZnO thin film and the substrate. X-ray diffraction pattern indicated that enhanced crystallinity in the ZnO thin film grown was achieved by inserting very thin MgO buffer layer, regardless of the substrate type. The strain in the ZnO thin film could also be controlled by the insertion of the MgO buffer layer, and tendency of the strain was strongly dependent on the substrate type.

기능적 오류방지를 위한 크로스톡 글리치 제거 알고리즘 (Crosstalk Glitch Elimination Algorithm for Functional Fault Avoidance)

  • 이형우;김유빈;김주호
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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    • pp.577-580
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    • 2004
  • Our paper focus on crosstalk noise problem, especially crosstalk glitch that occurs when victim is stable state and aggressor is transitive state. This generated glitch weigh with the functional reliability if the glitch is considerable. In this paper, we use buffer insertion, down sizing, buffer insertion with up-sizing methods concurrently. These methodologies use filtering effects which gates that have bigger noise margin than glitch width eliminates glitch. In addition, we do limited optimization in boundary of node's slack. Therefore, the operated node's changes are for nothing in other node's slack.

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기판의 종류에 따른 SAW 필터용 AlN 박막의 특성 (Characteristics of AlN thin films for SAW filters based on substrates)

  • 고봉철;남창우
    • 센서학회지
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    • 제16권3호
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    • pp.240-245
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    • 2007
  • AlN thin film for SAW filter application was deposited on (100) silicon, sapphire, $Si_{3}N_{4}$/Si, and $Al_{2}O_{3}$/Si substrates by reactive magnetron sputtering method, respectively. The structural characteristics were dependent on the structure of substrates. Scanning Electron Microscope (SEM), X-ray Diffraction (XRD) and Atomic Force Microscope (AFM) have been used to analyze structural properties and preferred orientation of AlN thin films. Preferred orientation and SAW characteristic of AlN were improved by insertion of $Al_{2}O_{3}$ buffer layer. Insertion loss of SAW devices using AlN/Si and AlN/$Al_{2}O_{3}$/Si were about 33.27 dB and 30.20 dB, respectively.

14.1" XGA AMLCD with Integrated Black Data Insertion as an application of a-Si TFT Gate Driver

  • Choi, Woo-Seok;Kim, Hae-Yeol;Cho, Hyung-Nyuck;Ryu, Chang-Il;Yoon, Soo-Young;Jang, Yong-Ho;Park, Kwon-Shik;Kim, Binn;Choi, Seung-Chan;Cho, Nam-Wook;Moon, Tae-Woong;Kim, Chang-Dong;Kang, In-Byeong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.583-586
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    • 2009
  • A 14.1" XGA (1024${\times}$768) LCD panel with Integrated Black Data Insertion (IBDI) has been world first developed successfully based on the integrated amorphous Silicon TFT gate driver which we previously introduced. The notable features compared with the conventional integrated a-Si TFT gate driver circuit are that the circuit consists of Dual buffer, Carry buffer structure, and Q-node cross charging for stable signal scanning characteristic and prevention of coupling between signal lines.

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Simultaneous Transistor Sizing and Buffer Insertion for Low Power Optimization

  • Kim, Ju-Ho
    • Journal of Electrical Engineering and information Science
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    • 제2권6호
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    • pp.28-35
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    • 1997
  • A new approach concurrent transistor sizing and buffer insertion for low power optimization is proposed in this paper. The method considers the tradeoff between upsizing transistors and inserting buffers and chooses the solution with the lowest possible power and area cost. It operates by analyzing the feasible region of the cost-delay curves of the unbuffered and buffered circuits. As such the feasible region of circuits optimized by our method is extended to encompass the envelop of cost-delay curves which represent the union of the feasible regions of all buffered ad unbuffered versions of the circuit. The method is efficient and tunable in that optimality can be traded for compute time and as a result it can in theory near optimal results.

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Insertion of an Organic Hole Injection Layer for Inverted Organic Light-Emitting Devices

  • 박순미;김윤학;이연진;김정원
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.379-379
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    • 2010
  • Recent technical advances in OLEDs (organic light emitting devices) requires more and more the improvement in low operation voltage, long lifetime, and high luminance efficiency. Inverted top emission OLEDs (ITOLED) appeared to overcome these problems. This evolved to operate better luminance efficiency from conventional OLEDs. First, it has large open area so to be brighter than conventional OLEDs. Also easy integration is possible with Si-based driving circuits for active matrix OLED. But, a proper buffer layer for carrier injection is needed in order to get a good performance. The buffer layer protects underlying organic materials against destructive particles during the electrode deposition and improves their charge transport efficiency by reducing the charge injection barrier. Hexaazatriphenylene-hexacarbonitrile (HAT-CN), a discoid organic molecule, has been used successfully in tandem OLEDs due to its high workfunction more than 6.1 eV. And it has the lowest unoccupied molecular orbital (LUMO) level near to Fermi level. So it plays like a strong electron acceptor. In this experiment, we measured energy level alignment and hole current density on inverted OLED structures for hole injection. The normal film structure of Al/NPB/ITO showed bad characteristics while the HAT-CN insertion between Al and NPB greatly improved hole current density. The behavior can be explained by charge generation at the HAT-CN/NPB interface and gap state formation at Al/HAT-CN interface, respectively. This result indicates that a proper organic buffer layer can be successfully utilized to enhance hole injection efficiency even with low work function Al anode.

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템플릿 매칭과 버퍼를 이용한 특징점 추적 방법 (A Feature Point Tracking Method By Using Template Matching and Buffer)

  • 조정현;안철웅;전재현
    • 한국인터넷방송통신학회논문지
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    • 제14권4호
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    • pp.173-179
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    • 2014
  • 오늘날 한국 사회에서 백내장 수술은 가장 빈번하게 이루어지는 수술중 하나이다. 백내장을 치료하기 위한 방법은 다양하게 발전해왔다. 이 중 오늘날 널리 쓰이는 방식은 인공 수정체를 이용하여 기존의 수정체와 교환하는 방법이다. 인공 수정체 삽입 시 미리 계산된 지점 및 각도로 정확하게 삽입하는 것이 중요할 수 있는 지점 표시가 필요 하다. 그러나 수술 중에 눈에서 분비되는 이물질 같은 요인에 의해 표시가 지워질 수 있다. 그러므로 이런 표시방법을 실시간으로 카메라 영상을 받음으로써 영상처리로 추적하는 방법이 필요하다. 본 논문에서는 템플릿 매칭과 버퍼를 이용한 특징점 추적 방법을 제안한다. 제안한 방법을 적용함으로 해당 수정체 삽입 위치를 정확히 추적하는 것을 확인하였다.

Performance improvements of organic solar cell using dual cathode buffer layers

  • Sachdeva, Sheenam;Kaur, Jagdish;Sharma, Kriti;Tripathi, S.K.
    • Current Applied Physics
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    • 제18권12호
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    • pp.1592-1599
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    • 2018
  • The present study deals with the effect of dual cathode buffer layer (CBL) on the performance of bilayer of 4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl)benzenamine] (TAPC) and fullerene (C70)-based organic solar cell (OSC) with low donor concentration. OSC devices with CBLs have been fabricated using thermal vapor deposition technique. We report the use of lithium fluoride (LiF) and molybdenum trioxide ($MoO_3$) as CBLs. The insertion of LiF between C70 and aluminium (Al) electrode enhances the power conversion efficiency (PCE) of device from 1.89% to 2.47% but quenching of photogenerated excitons is observed at interface of C70 and LiF layers. Incorporation of $MoO_3$ between LiF and Al electrode further enhances PCE of device to 3.51%. This has also improved the material quality and device properties, by preventing the formation of gap states and diminishing exciton quenching.