• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.174-174
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• 2010

Gallium Nitride(GaN) attracts great attention due to their wide band gap energy (3.4eV), high thermal stability to the solid state lighting devices like LED, Laser diode, UV photo detector, spintronic devices, solar cells, sensors etc. Recently, researchers are interested in synthesis of polycrystalline and amorphous GaN which has also attracted towards optoelectronic device applications significantly. One of the alternatives to deposit GaN at low temperature is to use Single Source Molecular Percursor (SSP) which provides preformed Ga-N bonding. Moreover, our group succeeds in hybridization of SSP synthesized GaN with Single wall carbon nanotube which could be applicable in field emitting devices, hybrid LEDs and sensors. In this work, the GaN thin films were deposited on c-axis oriented sapphire substrate by MBE (Molecular Beam Epitaxy) using novel single source precursor of dimethyl gallium azido-tert-butylamine($Me_2Ga(N_3)NH_2C(CH_3)_3$) with additional source of ammonia. The surface morphology, structural and optical properties of GaN thin films were analyzed for the deposition in the temperature range of $600^{\circ}C$ to $750^{\circ}C$. Electrical properties of deposited thin films were carried out by four point probe technique and home made Hall effect measurement. The effect of ammonia on the crystallinity, microstructure and optical properties of as-deposited thin films are discussed briefly. The crystalline quality of GaN thin film was improved with substrate temperature as indicated by XRD rocking curve measurement. Photoluminescence measurement shows broad emission around 350nm-650nm which could be related to impurities or defects.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.203.1-203.1
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• 2013

Zinc oxide (ZnO) nanocrystalline thin films on various growth temperatures for active layer and different buffer layer thickness were grown by plasma-assisted molecular beam epitaxy (PA-MBE) on Si substrates. The ZnO active layer were grown with various growth temperature from 500 to $800^{\circ}C$ and the ZnO buffer layer were grown for different time from 5 to 40 minutes. To investigate the structural and optical properties of the ZnO thin films, scanning electron microscope (SEM), X-ray diffractometer (XRD), and photoluminescence (PL) spectroscopy were used, respectively. In the SEM images, the ZnO thin films have high densification of grains and good roughness and uniformity at $800^{\circ}C$ for active layer growth temperature and 20 minutes for buffer layer growth time, respectively. The PL spectra of ZnO buffer layers and active layers display sharp near band edge (NBE) emissions in UV range and broad deep level emissions (DLE) in visible range. The intensity of NBE peaks for the ZnO thin films significantly increase with increase in the active layer growth temperature. In addition, the NBE peak at 20 minutes for buffer layer growth time has the largest emission intensity and the intensity of DLE peaks decrease with increase in the growth time.

• Korean Journal of Materials Research
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• v.16 no.12
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• pp.761-765
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• 2006

[ $II-III_2-(S,Se)_4$ ] structured of phosphor has been used at various field because those have high luminescent efficiency and broad emission band. Among these phosphors, the europium doped $BaGa_2S_4$ was prepared by solid-state method and had high potential application due to an emissive property of UV region. Also, the common sulfide phosphors were synthesized by using injurious $H_2S\;or\;CS_2$ gas. However, in this study $BaGa_2S_4:Eu^{2+}$ phosphor in addition to excess sulfur was prepared under at 5% $H_2/95%\;N_2$ reduction atmosphere. Thus, this process could be considered as large scale synthesis because of non-harmfulness and simplification. The photoluminescence efficiency of the prepared $BaGa_2S_4:Eu^{2+}$ phosphor increased 20% than that of commercial $SrGa_2S_4:Eu^{2+}$ phosphor. The prepared $BaGa_2S_4:Eu^{2+}$ could be applied to green phosphor for white LED of three wavelengths.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.167-170
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• 2004

The stochiometric mix of evaporating materials for the $CuGaT_2$ single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuGaTe_2$ polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were 6.025 ${\AA}$ and 11.931 ${\AA}$, respectively. To obtain the single crystal thin films, $CuGaTe_2$ mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $670^{\circ}C$ and $410^{\circ}C$ respectively, and the thickness of the single crystal thin films is $2.1{\mu}m$. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $CuGaTe_2$ single crystal thin film, we have found that the values of spin orbit coupling ${\Delta}s.o$ and the crystal field splitting ${\Delta}cr$ were $0.079\underline{1}eV$ and $0.246\underline{3}eV$ at 10 K, respectively. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be $0.047\underline{0}eV$ and the dissipation energy of the donor-bound exciton and acceptor-bound exciton to be $0.049\underline{0}eV$, $0.055\underline{8}eV$, respectively.

• Korean Journal of Remote Sensing
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• v.35 no.5_2
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• pp.861-871
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• 2019

Landsat satellite images have been increasingly used for disaster damage analysis and disaster monitoring because they can be used for periodic and broad observation of disaster damage area. However, periodic disaster monitoring has limitation because of areas having missing data due to clouds as a characteristic of optical satellite images. Therefore, a study needs to be conducted for restoration of missing areas. This study detected and removed clouds and cloud shadows by using the quality assessment (QA) band provided when acquiring Landsat-8 images, and performed image restoration of removed areas through a spatial and temporal adaptive reflectance fusion (STARFM) algorithm. The restored image by the proposed method is compared with the restored image by conventional image restoration method throught MLC method. As a results, the restoration method by STARFM showed an overall accuracy of 89.40%, and it is confirmed that the restoration method is more efficient than the conventional image restoration method. Therefore, the results of this study are expected to increase the utilization of disaster analysis using Landsat satellite images.

• Journal of the Society of Naval Architects of Korea
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• v.31 no.1
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• pp.84-93
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• 1994

The purpose of present study is to investigate the surface roughness on tip-vortex cavitation and its induced noise, emanating from an elliptic wing of NACA 0012 section. Roughness elements of $200{\mu}m$ are applied to the 10% portion of wing tip, and then, the wing tip as well as the leading edge. It is shown from cavitation observation that the cavitation inception is first visible at about half chord downstream of wing tip for most experimental conditions, and developed into the tip-vortex cavitation and finally the fully developed cavitation as cavitation number is decreased. Acoustic noise generated by a tip-vortex cavitation has its frequency range of 3 kHz to 50 kHz, while the fully-developed cavitation at lower cavitation number induces a broad band spectrum. It is also shown that, when the roughness elements are applied to the wing tip and the leading edge, the cavitation characteristics and its induced noise are improved. Moreover, it is appeared that the condition at which the rough surface is at pressure side gives a better result. although its lift-drag ratio is reduced.

• Applied Chemistry for Engineering
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• v.32 no.2
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• pp.125-131
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• 2021

Semiconductor-based photocatalysts can only be activated with ultraviolet or visible light due to their intrinsic bandgap, and they cannot use the energy in the near-infrared region, which accounts for about 50% of solar energy. Therefore, in order to improve the performance of the semiconductor photocatalyst, it is necessary to utilize more solar energy in a broad band ranging from ultraviolet to near-infrared. Combining upconversion nanoparticles with semiconductor photocatalysts for near-infrared absorption have thus been reported. Upconversion nanoparticles can sequentially absorb multiple near-infrared photons and convert them into ultraviolet or visible to activate photocatalysts. In addition, by coupling the semiconductor photocatalyst and the upconversion nanoparticles with the plasmonic metal nanoparticles, the photocatalytic activity can be further improved. This review summarizes the recent studies on improving the photocatalytic performance with near-infrared absorption by using upconversion nanoparticles.

• Journal of The Korean Astronomical Society
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• v.54 no.2
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• pp.37-47
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• 2021

Reverberation mapping (RM) is an efficient method to investigate the physical sizes of the broad line region (BLR) and dusty torus in an active galactic nucleus (AGN). The Spectro-Photometer for the History of the Universe, Epoch of Reionization and Ices Explorer (SPHEREx) mission will provide multi-epoch spectroscopic data at optical and near-infrared wavelengths. These data can be used for RM experiments with bright AGNs. We present results of a feasibility test using SPHEREx data in the SPHEREx deep regions for torus RM measurements. We investigate the physical properties of bright AGNs in the SPHEREx deep field. Based on this information, we compute the efficiency of detecting torus time lags in simulated light curves. We demonstrate that, in combination with complementary optical data with a depth of ~ 20 mag in B-band, lags of ≤ 750 days for tori can be measured for more than ~ 200 bright AGNs. If high signal-to-noise ratio photometric data with a depth of ~ 21-22 mag are available, RM measurements are possible for up to ~ 900 objects. When complemented by well-designed early optical observations, SPHEREx can provide a unique dataset for studies of the physical properties of dusty tori in bright AGNs.

• Microbiology and Biotechnology Letters
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• v.47 no.3
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• pp.449-458
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• 2019

Hepatitis B treatments using immune therapy are gaining interest because of the improvements in dendritic cell performance for antigen presentation, which induces an appropriate immune response and raises patient survival rates. This research aims to produce a significant amount of the HBcAg antigen, which can induce an immune response and have a curative effect on HBV infection. In this study, the HBV subgenotype B3 of the HBcAg gene was used, which is dominant in Indonesia. Further, Lactococcus lactis bacteria was used as the host because of its safety and tightly regulated protein expression. The codon usage for the HBcAg gene was optimized to improve protein expression in L. lactis, which is important because a codon is not random between species. The HBcAg gene is attached to a pNZ8148 plasmid and transformed into the L. lactis NZ3900 expression host. The results confirm that a positive protein band (21 kDa) in two fractions of purified HBcAg was recognized by both western blotting and dot blot hybridization, even if the HBcAg optimized codon has higher GC contents than that suggested for L. lactis expression. Overall, this research strengthens the broad use of L. lactis bacteria for any protein expression, including higher protein expression of codon optimized HBcAg gene compared to non-optimized genes. Furthermore, the improvement in the codon optimization of the HBcAg gene significantly increases the total protein expression by 10-20%, and the expression level of the codon optimized HBcAg increases 1.5 to 3.2-times that of the native HBcAg.

• Current Photovoltaic Research
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• v.7 no.1
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• pp.9-14
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• 2019

Carrier selective solar cell structure has allured curiosity of photovoltaic researchers due to the use of wide band gap transition metal oxide (TMO). Distinctive p/n-type character, broad range of work functions (2 to 7 eV) and risk free fabrication of TMO has evolved new concept of heterojunction intrinsic thin layer (HIT) solar cell employing carrier selective layers such as $MoO_x$, $WO_x$, $V_2O_5$ and $TiO_2$ replacing the doped a-Si layers on either front side or back side. The p/n-doped hydrogenated amorphous silicon (a-Si:H) layers are deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD), which includes the flammable and toxic boron/phosphorous gas precursors. Due to this, carrier selective TMO is gaining popularity as analternative risk-free material in place of conventional a-Si:H. In this work hole selective materials such as $MoO_x$, $WO_x$ and $V_2O_5$has been investigated. Recently $MoO_x$, $WO_x$ & $V_2O_5$ hetero-structures showed conversion efficiency of 22.5%, 12.6% & 15.7% respectively at temperature below $200^{\circ}C$. In this work a concise review on few important aspects of the hole selective material solar cell such as historical developments, device structure, fabrication, factors effecting cell performance and dependency on temperature has been reported.