• 전기학회논문지
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• 제61권12호
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• pp.1872-1876
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• 2012

A calculation method of the breakdown voltage for the drain region with the cylindrical structure in LDMOS is proposed. The depletion region of the drain is divided into many smaller regions and the doping concentration of each split region is assumed to be uniformly distributed. The field and potential in each split region is calculated by the integration of the Poisson equation and the ionization integral method is used to compute the breakdown voltage. The breakdown voltage resulted from the proposed method shows the maximum relative error of 2.2% compared with the result of the 2-dimensional device simulation using BANDIS.

• 대한전기학회논문지
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• 제45권3호
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• pp.386-392
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• 1996

Zinc-Borosilicate is used as a side insulator wall to make high breakdown voltage with one Field Limiting Ring in a power p-n junction device in simulation. It is known that surface charge density can be yield at the interface of Zinc-Borosilicate glass / silicon system. When the glass is used as a side insulator wall, surface charge varied potential distribution and breakdown voltage is improved 1090 V under the same structure.The breakdown voltage under varying the surface charge density has a limit value. When the epitaxial thickness is varied, the position of FLR doesn't influence to the breakdown characteristic not only under non punch-through structure but also under punch-through structure. (author). 7 refs., 12 figs., 2 tabs.

• 한국정보통신학회논문지
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• 제17권2호
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• pp.372-377
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• 2013

DGMOSFET의 항복전압에 대하여 고찰하였으며 이를 위하여 포아송방정식의 분석학적 해 및 Fulop의 항복전압 조건을 사용하였다. DGMOSFET는 게이트단자의 전류제어능력 향상으로 단채널 효과를 감소시킬 수 있다는 장점이 있다. 그러나 단채널에서 나타나는 항복전압의 감소는 피할 수 없으므로 이에 대한 연구가 필요하다. 포아송방정식을 풀 때 사용하는 전하분포함수에 가우시안 함수를 적용함으로써 보다 실험값에 가깝게 해석하였으며 이때 이중게이트 MOSFET의 소자크기에 따라 항복전압의 변화를 관찰하였다. 본 연구의 전위모델에 대한 타당성은 이미 기존에 발표된 논문에서 입증하였으며 본 연구에서는 이 모델을 이용하여 항복전압을 분석할 것이다. DGMOSFET의 항복전압을 관찰한 결과, 채널길이가 감소할수록 그리고 도핑농도가 증가할수록 항복전압이 감소하는 것으로 나타났다. 또한 게이트산화막 두께 및 채널두께에 따라서 항복전압의 변화가 관찰되었다.

• Journal of information and communication convergence engineering
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• 제16권1호
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• pp.43-47
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• 2018

The existing modeling of avalanche dominated breakdown in double gate MOSFETs (DGMOSFETs) is not relevant for 10 nm gate lengths, because the avalanche mechanism does not occur when the channel length approaches the carrier scattering length. This paper focuses on the punch through mechanism to analyze the breakdown characteristics in 10 nm DGMOSFETs. The analysis is based on an analytical model for the thermionic-emission and tunneling currents, which is based on two-dimensional distributions of the electric potential, obtained from the Poisson equation, and the Wentzel-Kramers-Brillouin (WKB) approximation for the tunneling probability. The analysis shows that corresponding flat-band-voltage for fixed threshold voltage has a significant impact on the breakdown voltage. To investigate ambiguousness of number of dopants in channel, we compared breakdown voltages of high doping and undoped DGMOSFET and show undoped DGMOSFET is more realistic due to simple flat-band-voltage shift. Given that the flat-band-voltage is a process dependent parameter, the new model can be used to quantify the impact of process-parameter fluctuations on the breakdown voltage.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.897-899
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• 1999

In this paper, the interfacial dielectric breakdown phenomenon of interface between Epoxy/EPDM (ethylene propylene diene terpolymer) was discussed, which affects stability of insulation system of power delivery devices. Specimen structure was designed by using MAGSOFT's FLUX2D based on the finite elements method. Design concepts is to reduce the effect of charge transport from electrode in the process of breakdown and to have the tangential electrical potential with the Epoxy/EPDM interface. AC interfacial breakdown phenomenon of was investigated by variation of interfacial conditions oil and temperature which are supposed to have influence on the interfacial breakdown strength. Interfacial breakdown strength was improved by spreading oil over interfacial surface. The decreasing ratio of the AC interfacial breakdown strength in non-oiled specimens was increased by the temperature rising and its of oiled specimens was not affected by temperature.

• 한국전기전자재료학회논문지
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• 제15권12호
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• pp.1079-1084
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• 2002

Because complex insulation method is used in EHV(extra high voltage) insulation systems, macro Interfaces between two different bulk materials which affect the stability of insulation system exist inevitably. Interface between toughened epoxy and silicone rubber was selected as a interface in EHV insulation systems and tested AC interfacial breakdown properties with variation of many conditions to influence on electrical Properties, such as interfacial pressure, roughness and oil. Specimen was designed to reduce the effect of charge transport from electrode in the process of breakdown and to have the tangential electrical potential with the direction of the interface between epoxy and silicone rubber by using FEM(finite elements method). It could control the interfacial pressure, roughness and viscosity of oil. From the result of this study, it was shown that the interfacial breakdown voltage is improved by increasing interfacial Pressure and oil. In particular, the dielectric strength saturates at certain interracial Pressure level. The decreasing ratio of the interfacial breakdown voltage in non-oiled specimen was increased by the temperature rising, while oiled specimen was not affected by temperature.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2012년도 춘계학술대회
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• pp.693-695
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• 2012

본 연구에서는 DGMOSFET의 항복전압에 대하여 고찰할 것이다. 이를 위하여 포아송방정식의 분석학적 해를 이용하였으며 Fulop의 항복전압 조건을 사용하였다. DGMOSFET는 게이트길이가 나노단위까지 사용가능한 소자로서 단채널효과를 감소시킬 수 있다는 장점이 있다. 그러나 단채널에서 나타나는 항복전압의 감소는 피할 수 없으므로 이에 대한 연구가 필요하다. 포아송방정식을 풀 때 사용하는 전하분포함수에 가우시안 함수를 적용함으로써 보다 실험값에 가깝게 해석하였으며 이때 이중게이트 MOSFET의 소자크기에 따라 항복전압의 변화를 관찰하였다. 본 연구의 전위모델에 대한 타당성은 이미 기존에 발표된 논문에서 입증하였으며 본 연구에서는 이 모델을 이용하여 항복전압을 분석할 것이다. DGMOSFET의 항복전압을 관찰한 결과, 채널길이가 감소할수록 그리고 도핑농도가 증가할수록 항복전압이 감소하는 것으로 나타났다. 또한 게이트산화막두께 및 채널두께에 따라서 항복전압의 변화가 관찰되었다.

• 전기학회논문지
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• 제62권5호
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• pp.649-656
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• 2013

A conventional epoxy-microsilica composite (EMC) and an epoxy-microsilica-nanosilicate composite (EMNC) were prepared in order to apply them to mold-type transformers, current transformers (CT) and potential transformers (PT). Nanosilicate was exfoliated in a epoxy resin using our electric field dispersion process and AC insulation breakdown strength at $30{\sim}150^{\circ}C$, glass transition temperature and viscoelasticity were studied. AC insulation breakdown strength of EMNC was higher than that of EMC and that value of EMNC was far higher at high temperature. Glass transition temperature and viscoelasticity property of EMNC was higher than those of EMC at high temperature. These results was due to the even dispersion of nanosilicates among the nanosilicas, which could be observed using transmission electron microscopy (TEM). That is, the nanosilicates interrupt the electron transfer and restrict the mobility of the epoxy chains.

• 조명전기설비학회논문지
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• 제28권4호
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• pp.62-69
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• 2014

This paper deals with the fundamental characteristics of transient and conventional ground impedances associated with soil discharges when the lightning impulse voltage was applied to a small-sized ground rod. The potential rise responses of the test ground rod to impulse currents were observed. The current-voltage (I-V)curves, transient and conventional ground impedance curves were examined.. To analyze the transient behaviors of ground rod attendant upon soil discharges, the impulse responses of ground rod were compared with those of non-inductive resistor. As a consequence, the potential rise and impedance of ground rod were reduced and the currents dispersed into the earth were increased due to soil discharges near the ground rod. Soil discharges are classified into two regimes; ionization and breakdown phenomena. The potential rise and impulse impedance of ground rod are significantly decreased by breakdown processes in soil.

• 국제학술발표논문집
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• The 9th International Conference on Construction Engineering and Project Management
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• pp.245-252
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• 2022

Risk identification for bridge projects is a knowledge-based and labor-intensive task involving several procedures and stakeholders. Presently, risk information of bridge projects is unstructured and stored in different sources and formats, hindering knowledge sharing, reuse, and automation of the risk identification process. Consequently, there is a need to develop structured and formalized risk information for bridge projects to aid effective risk identification and automation of the risk management processes to ensure project success. This study proposes a semantic risk breakdown structure (SRBS) to support risk identification for bridge projects. SRBS is a searchable hierarchical risk breakdown structure (RBS) developed with python programming language based on a semantic modeling approach. The proposed SRBS for risk identification of bridge projects consists of a 4-level tree structure with 11 categories of risks and 116 potential risks associated with bridge projects. The contributions of this paper are threefold. Firstly, this study fills the gap in knowledge by presenting a formalized risk breakdown structure that could enhance the risk identification of bridge projects. Secondly, the proposed SRBS can assist in the creation of a risk database to support the automation of the risk identification process for bridge projects to reduce manual efforts. Lastly, the proposed SRBS can be used as a risk ontology that could aid the development of an artificial intelligence-based integrated risk management system for construction projects.