• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.348-348
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• 2011

Carbon nanotube (CNT) field effect transistors and sensors use CNT as a current channel, of which the resistance varies with the gate voltage or upon molecule adsorption. Since the performance of CNT devices depends very much on the CNT/metal contact resistance, the CNT/electrode contact must be stable and the contact resistance must be small. Depending on the geometry of CNT/electrode contact, it can be categorized into the end-contact, embedded-contact (top-contact), and side-contact (bottom-contact). Because of difficulties in the sample preparation, the end-contact CNT device is seldom practiced. The embedded-contact in which CNT is embedded inside the electrode is desirable due to its rigidness and the low contact resistance. Fabrication of this structure is complicated, however, because each CNT has to be located under a high-resolution microscope and then the electrode is patterned by electron beam lithography. The side-contact is done by depositing CNT electrophoretically or by precipitating on the patterned electrode. Although this contact is fragile and the contact resistance is relatively high, the side-contact by far has been widely practiced because of its simple fabrication process. Here we introduce a simple method to embed CNT inside the electrode while taking advantage of the bottom-contact process. The idea is to utilize a eutectic material as an electrode, which melts at low temperature so that CNT is not damaged while annealing to melt the electrode to embed CNT. The lowering of CNT/Au contact resistance upon annealing at mild temperature has been reported, but the electrode in these studies did not melt and CNT laid on the surface of electrode even after annealing. In our experiment, we used a eutectic Au/Al film that melts at 250$^{\circ}C$. After depositing CNT on the electrode made of an Au/Al thin film, we annealed the sample at 250$^{\circ}C$ in air to induce eutectic melting. As a result, Au-Al alloy grains formed, under which the CNT was embedded to produce a rigid and low resistance contact. The embedded CNT contact was as strong as to tolerate the ultrasonic agitation for 90 s and the current-voltage measurement indicated that the contact resistance was lowered by a factor of 4. By performing standard fabrication process on this CNT-deposited substrate to add another pair of electrodes bridged by CNT in perpendicular direction, we could fabricate a CNT cross junction. Finally, we could conclude that the eutectic alloy electrode is valid for CNT sensors by examine the detection of Au ion which is spontaneously reduced to CNT surface. The device sustatined strong washing process and maintained its detection ability.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.31 no.3 s.258
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• pp.380-387
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• 2007

We carried out an image analysis of living cells forming their contacts at the bottom of the cell culturing substrate. In order to visualize the contact area selectively, we adopted total-internal-reflection-fluorescence (TIRF) method, which can illuminate the specimen volume within only several hundred nano-meters above the substrate. From the fluorescent intensity of the TRF image, we could calculate the distance of the cell surface from the substrate. As a result, we visualized the origin of cell contacts, their movements, and the change of cell-contact type from the close-contact into focal-contact with information of its vertical displacement representing the temporal evolution process of the three-dimensional cell-surface-profile near the contact area during this metamorphosis.

• Tribology and Lubricants
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• v.35 no.1
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• pp.52-58
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• 2019

In the case of high-voltage connectors applied to automobiles, waterproofing has become an important issue for the safety of automobiles. In this study, structural analysis is performed on silicone rubber-type waterproof seals used in the voltage connector. For the structural analysis, the tensile properties of the actual rubber seal are evaluated using a miniaturized tensile testing machine. The Mooney-Rivlin material constants of the rubber seal are determined as follows; $D_1=0$, $C_{01}=0.241$, $C_{10}=0.0142$. The analysis shows that the contact pressure at the top of the seal where the seal and male connector are in contact is approximately three times higher than that at the bottom of the seal where the seal and female connector are in contact. It is confirmed that the waterproofing performance of the rubber seal depends on the contact pressure of the seal bottom where the seal and female connector are in contact. The contact pressure for waterproofing is found to be 4.7 bar. The strain concentration of the curved part is attributed to excessive initial tension. Therefore, a redesign is recommended for uniform stress or strain distribution in the curved section of the seal in response to the stress relaxation problem due to permanent deformation.

• Journal of the Korean Society for Railway
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• v.7 no.3
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• pp.186-192
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• 2004

Using the finite element method, rail-wheel contact model has been analyzed for mechanical loads due to passengers and payload of the train. This paper presents an investigation on how tapered wheel and inclined rail surfaces affect the contact stress and displacement of rail-wheel contacting surface under mechanical loads. For a numerical analysis, the tapered faces of the wheel are considered as 2.5% and 5.5%. And two models of the tilted rail are also considered as 40：1 and 20：1 at the bottom of the rail. The computed results based on the contact stress and displacement FE analysis indicate that the tilting ratio of the rail, 20：1 with a tapered face of the wheel, 2.5% may be more stable compared to that of 40：1 tilting model and 5.5% tapered wheel face.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.53 no.4
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• pp.337-348
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• 2017

The tension of warp from trawler and sea-floor contact can generate tilt and wake turbulence around otter boards. Preliminary measurements of otter board tilt and 3-D flow velocity during bottom trawl operations were taken using a vector instrument to investigate the effects of wake turbulence at the trailing edge of the otter board. Tilt data (i.e., yaw, pitch, and roll) at 1 Hz and flow data (velocities in the towing, lateral, and vertical directions) at 16 Hz were analyzed to determine their periods and amplitudes using global wavelet and peak event analyses. The mean period (${\pm}standard$ deviation) of the tilt from the peak event analysis ($5{\pm}2s$) was longer or double than that of flow velocity ($3{\pm}2s$). The two periods also had a significant linear relationship. The turbulence rate of flow was 30-50% at the trailing edge and was closely related to roll deviation. The frequency of phase difference ratios (i.e., peak time differences between tilts and flow periods) was significantly different from random occurrence in two trials, possibly due to side tidal effects. However, in the other trials, flow peaks were random, as shown by the even peak times between tilts and flows. Future studies should focus on reducing tilt variation, wake turbulence, and bottom contact to stabilize otter board motion.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.889-892
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• 2004

We developed a high performance bottom contact, organic thin-film transistor (OTFT) array on plastic using a self-organized process. The effect of OTS treatment on the PVP gate insulator for the performance of OTFT on plastic has been studied The OTFT without OTS exhibited a field-effect mobility of 0.1 $cm^2$/Vs on/off current ratio of > $10^7$. On the other hand, OTFT with OTS, exhibited a field-effect mobility of 1.3 $cm^2$/Vs and on/off current ratio of>$10^8$.

• Magazine of the Korean Society of Agricultural Engineers
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• v.42 no.6
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• pp.83-89
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• 2000

A depot encircled with contact oxidation canal has been developed to improve water qualityr. The depot is aimed to settle suspended solid in the flow. The oxidation canal is to contact the pollutants and oxygen in the surface of gravel filter to purify the water. The deposit of the pollutant in the depot is released by the drainage culvert located at the bottom of it. Aeration nozzle is installed to supply enough oxygen to the gravel filter layers in the bottom of the detent the flow and improve oxidation efficiency. From the experiment it is founded that 91% of SS, 39% of TN, 63% of TP and 77% of COD were removed in the system. The treatment efficiency of total nitrogen is rather lower than any other components, however, it would be higher when some floating vegetation is added in the primary clarifier. The depot and oxidation canal system would be useful to purify the flows in the mouth of the reservoirs or at the outlet of the drainage canal.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.74-77
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• 2006

Thin $AuO_x$ layer was formed by $O_2$ plasma treatment on Au electrode. The surface work function of plasma treatment showed higher by 0.5 eV than that of bare Au, reducing the hole injection barrier at the Au/pentacene interface. Using $O_2$ plasma-treated Au source-drain electrodes, the field-effect mobility of bottom-contact pentacene-OTFT was increased from 0.05 to 0.1 $cm^2/Vs$.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.958-961
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• 2007

The electrical characteristics of organic thin-filmtransistor (OTFTs) can be improved by inserting adhesion layer on gate dielectrics. Adhesion layer was used as polymeric adhesion layer deposited on inorganic gate insulators such as silicon dioxide $(SiO_2)$ and it was formed by vapor deposition polymerization (VDP) instead of spin-coating process. The OTFTs obtained the on/off ratio $of{\sim}10^4$, threshold voltage of 1.8V, subthreshold slop of 2.9 V/decade and field effect mobility about $0.01\;cm^2/Vs$.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1174-1177
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• 2006

A bottom contact organic thin film transistor (OTFT) is fabricated with an organic double-layered gate insulator (GI) and pentacene. The PMMA and MNB layers are treated on gate insulator and source/drain (S/D, Au) before depositing pentacene to investigate device properties and pentacene growth. The sequence of surface treatment affects a device performance seriously. The ultra-thin PMMA (below 50A) was deposited on organic gate insulator and S/D metal by spin coating method, which showed no deterioration of on-state current (Ion) although bottom contact structure was exploited. We proposed that the reason of no contact resistance (Rc) increase may be due to a wettability difference in between PMMA / Au and PMMA / organic GI. As a result, the device treated by $PMMA\;{\rightarrow}\;MNB$ showed much better Ion behavior than those fabricated by $MNB\;{\rightarrow}\;PMMA$. We will report the important physical and electrical performance difference associated with surface treatment sequence.