• 제목/요약/키워드: boron-doped

검색결과 226건 처리시간 0.031초

Activation for Boron Doped poly-Si films by Hydrogen doping

  • Yang, Joon-Young;Yu, S.H.;Oh, K.M.;Kim, J.I.;Yang, M.S.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.171-174
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    • 2002
  • When boron ions are doped into the poly-Si films, the hydrogen ions doped with boron ions compensate the defect sites and suppress to produce damage density. These samples can be easily activated by hydrogen doping at high acceleration voltage($V_{acc}$).

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붕소가 도핑된 다이아몬드 전극을 이용한 생체화학물질의 검출 (Detection of Bio-chemical by Boron-doped Diamond Electrode)

  • 김규식;;;박수길
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.569-572
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    • 2001
  • Selective. highly stable determination of epinephrine(adrenalin) was achieved in cyclic voltammetric measurement carried out at electrochemically treated conductive boron-doped diamond electrode. Boron-doped diamond electrodes were prepared on single crystal Si wafers by microwave plasma chemical vapor deposition and $B_{2}O_{3}$ was dissolved in acetone/methanol(9:1) mixture solution so that the B/C weight ratio ca. $10^{4}ppm$. Epinephrine is a kind of catecholamines, which secreted from adrenal marrow cells. The serious problem to detection of epinephrine is the interference phenomena of electroactive constituent. including AA. In this study. electrochemical treatment of BDD was carried out to discriminate between epinephrine and AA responses. Experimental results showed that the peak potential of AA oxidation shift to the positive direction and the oxidation peak of epinephrine was unchanged. The effect of electrochemical treatment was maintained up to 40hrs.

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고농도 붕소의 도핑된 실리콘 웨이퍼에서의 산소석출에 관한 연구 (A Study on Oxygen Precipitation in Heavily Boron Doped Silicon Wafer)

  • 윤상현;곽계달
    • 한국전기전자재료학회논문지
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    • 제11권9호
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    • pp.705-710
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    • 1998
  • Intrinsic gettering is usually to improve wafer quality, which is an important factor for reliable ULSI devices. In order to generate oxygen precipitation in lightly and heavily boron doped silicon wafers with or without high $^75 As^+$ ion implantation, the 2-step annealing method was adopted. After annealing, the were cleaved and etched with th Wright etchant. The morphology of cross section on samples was inspected by FESEM(field emission scanning electron microscopy). The morphology of unimplanted samples was rater rough than that of the implanted. Oxygen precipitation density observed by an optical microscope in lightly boron doped samples was about 3$\times10^6/cm^3$. However, in heavily boron doped samples, the density of oxygen precipitation was largest at $600^{\circ}C$ in 1st annealing, and decreased abruptly until $800^{\circ}C$, But it increased slightly at $1000^{\circ}C$ and was independent with the implantation.

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붕소가 도핑된 다이아몬드 전극을 이용한 생계화학물질의 검출 (Detection of Bio-chemical by Boron-doped Diamond Electrode)

  • 김규식;;;박수길
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.569-572
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    • 2001
  • Selective, highly stable determination of epinephrine(adrenalin) was achieved in cyclic voltammetric measurement carried out at electrochemically treated conductive boron-doped diamond electrode. Boron-doped diamond electrodes were prepared on single crystal Si wafers by microwave plasma chemical vapor deposition and B$_2$O$_3$ was dissolved in acetone/methanol(1:1) mixture solution so that the B/C weight ratio ca. 10$^3$ppm.. Epinephrine is a kind of catecholamines, which secreted from adrenal marrow cells. The serious problem to detection of epinephrine is the interference phenomena of electroactive constituent, including AA. In this study, electrochemical treatment of BDD was carried out to discriminate between epinephrine and AA responses. Experimental results showed that the peak potential of AA oxidation shift to the positive direction and the oxidation peak of epinephrine was unchanged. The effect of electrochemical treatment was maintained up to 40hrs.

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붕소도핑 다이아몬드 전극을 이용한 수용성 폐절삭유의 전기화학적 특성연구 (A Study on the Electrochemical Properties of Water-soluble Waste Cutting Oil using Boron-Doped Diamond Electrodes)

  • 박진혁;김태규
    • 열처리공학회지
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    • 제35권6호
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    • pp.337-342
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    • 2022
  • In metal cutting, water-soluble cutting oil is used for cooling the surface of the workpiece and improving the surface roughness. However, waste cutting oil contains preservatives and surfactants, and if it is discarded as it is, it has an great influence on environmental pollution. For this reason, regulations on the use of cutting oil are being stricter. Hence, the development of eco-friendly treatment technologies is required. In this study, a diamond electrode doped with boron on a niobium substrate was deposited by thermal filament chemical vapor deposition and waste cutting oil was treated using an electrochemical method. Compared to the total amount of organic carbon contained in the waste cutting oil, it was confirmed that the boron-doped diamonds developed from this study showed much better performance than electrodes that has been widely used before.

이종 원자 도핑 탄소 나노재료를 이용한 PEMFC Cathode용 촉매 합성 및 평가 (Heteroatom-doped carbon nanostructures as non-precious cathode catalysts for PEMFC)

  • 조가영;상가라주 샨무감
    • 한국태양에너지학회:학술대회논문집
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    • 한국태양에너지학회 2012년도 춘계학술발표대회 논문집
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    • pp.406-409
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    • 2012
  • Recently, enormous research efforts have been focused on the development of non-precious catalysts to replace Pt for electrocatalytic oxygen reduction reaction (ORR), and to reduce the cost of proton exchange membrane fuel cells (PEMFCs). In recent years, heteroatom (N, B, and P) doped carbon nanostructures have been received enormous importance as a non-precious electrode materials for oxygen reduction. Doping of foreign atom into carbon is able to modify electronic properties of carbon materials. In this study, nitrogen and boron doped carbon nanostructures were synthesized by using a facile and cost-effective thermal annealing route and prepared nanostructures were used as a non-precious electrocatalysts for the ORR in alkaline electrolyte. The nitrogen doped carbon nanocapsules (NCNCs) exhibited higher activity than that of a commercial Pt/C catalyst, excellent stability and resistance to methanol oxidation. The boron-doped carbon nanostructure (BC) prepared at $900^{\circ}C$ showed higher ORR activity than BCs prepared lower temperature (800, $700^{\circ}C$). The heteroatom doped carbon nanomaterials could be promising candidates as a metal-free catalysts for ORR in the PEMFCs.

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수소화 붕소 나트륨 (NaBH4) 과 이산화탄소의 환원을 이용한 바나듐 레독스 흐름전지용 탄소 촉매 개발 (Development of Boron Doped Carbon Using CO2 Reduction with NaBH4 for Vanadium Redox Flow Battery)

  • 한만호;김한성
    • 전기화학회지
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    • 제21권1호
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    • pp.1-5
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    • 2018
  • 본 연구에서는 수소화 붕소 나트륨 ($NaBH_4$)를 이용하여 고온에서 이산화탄소 ($CO_2$)를 환원시켜 붕소가 도핑된 카본을 제조하였고, 이를 카본 펠트에 코팅하여 바나듐 레독스 흐름전지용 전극으로 적용하였다. 전기화학적 성능 평가 결과, 순수 카본펠트 대비 붕소 도핑된 카본으로 코팅된 카본펠트의 가역성이 약 20% 향상되었고 전하 전달 저항이 60% 감소하였다. 충/방전 결과에서는, 에너지 밀도와 에너지 효율이 각각 21%와 12.4% 향상되었다. 이러한 결과는 $CO_2$를 환원시켜 제조한 탄소가 레독스 흐름전지용 전극소재로 사용될 수 있는 가능성을 보여준다.

Preparation of Boron Doped Fullerene Film by a Thermal Evaporation Technique using Argon Plasma Treatment and Its Electrochemical Application

  • Arie, Arenst Andreas;Jeon, Bup-Ju;Lee, Joong-Kee
    • Carbon letters
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    • 제11권2호
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    • pp.127-130
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    • 2010
  • Boron doped fullerene $C_{60}$ ($B:C_{60}$) films were prepared by the thermal evaporation of $C_{60}$ powder using argon plasma treatment. The morphology and structural characteristics of the thin films were investigated by scanning electron microscope (SEM), Fourier transform infra-red spectroscopy (FTIR) and x-ray photo electron spectroscopy (XPS). The electrochemical application of the boron doped fullerene film as a coating layer for silicon anodes in lithium ion batteries was also investigated. Cyclic voltammetry (CV) measurements were applied to the $B:C_{60}$ coated silicon electrodes at a scan rate of $0.05\;mVs^{-1}$. The CV results show that the $B:C_{60}$ coating layer act as a passivation layer with respect to the insertion and extraction of lithium ions into the silicon film electrode.

보론 도핑된 CdS 박막의 구조적 및 광학적 특성 (Effects of Boron Doping on the Structural and Optical Properties of CdS Thin Films)

  • Lee, Jae-Hyeong;Jung, Hak-Kee
    • 한국정보통신학회논문지
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    • 제7권5호
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    • pp.1032-1037
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    • 2003
  • 보론 도핑된 CdS 박막을 chemical bath deposition법으로 증착하고, 도핑농도에 따른 박막의 구조적, 광학적 특성을 조사하였다. 보론 도핑된 CdS 박막은 XRD 분석 결과 (002)면 방향으로 강한 우선성장 방위를 가지며 육방정(hexagonal) 구조로 성장하였다 보론 도핑에 관계없이 모든 시편은 2.3 eV(녹색 발광) 및 1.6 eV(적색 발광) 부근에서 PL peak을 가지며, 도핑 농도가 증가함에 따라 피크 세기는 감소하였다. 보론 도핑에 따라 CdS 박막의 가시광 영역에서의 광투과율은 향상되었고, 밴드 갭은 증가하였다.