• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2009년 추계학술발표대회
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• pp.205-209
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• 2009

Wetting properties between silver-copper-titanium braze alloys with different titanium contents up to 2.8 mass% and hexagonal boron nitride ceramics were investigated using sessile drop method at 1123K in Argon. The final contact angle is less than $30^{\circ}$ when the Ti content was over 0.41 mass%. Meanwhile, the contact angle curves show different behavior. In case of using braze alloy containing 2.8 mass% of titanium, the initial contact angle is acute angle just after the melting of braze. In case of brazes containing titanium less than 2.26 mass%, the contact angle is larger than $90^{\circ}$ at the beginning and slowly decreases to acute angle. The reaction layer of titanium nitride is observed at the interface. In addition, the reaction of Ti in the braze and N in the bulk h-BN seemed to show diffusion limited spreading.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2004년도 제22회 춘계학술대회논문집
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• pp.722-725
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• 2004

An experimental investigation was conducted to investigate the effects of the equivalence ratio and air mass flux on the combustion efficiency in a solid fuel ramjet used fuel grains which were highly loaded with boron carbide. Combustion efficiency increased with increasing equivalence ratio (grain length), and decreasing air mass flux. Higher inlet air temperature produced higher combustion efficiencies, apparently the result of enhanced combustion of the larger boron particles those bum in a diffusion controlled regime. Short grains which considered primarily of the recirculation region produced larger particles and lower combustion efficiencies. The result of the normalized combustion efficiency increased with inlet air temperature, is coincident with the result of the Brayton cycle thermal and the total efficiency relating to the heat input.

• Journal of Welding and Joining
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• 제34권2호
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• pp.46-53
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• 2016

Effect of heating rate on microstructure of brazed joints with STS 304 Printed Circuit Heat Exchanger (PCHE),which was manufactured as large-scale($1170(L){\times}520(W)){\times}100(T)$, mm), have been studied to compare bonding phenomenon. The specimens using MBF 20 was bonded at $1080^{\circ}C$ for 1hr with $0.38^{\circ}C/min$ and $20^{\circ}C/min$ heating rate, respectively. In case of a heating rate of $20^{\circ}C/min$, overflow of filler metal was observed at the edge of a brazed joints showing the height of filler metal was decreased from $100{\mu}m$ to $68{\mu}m$. At the center of the joints, CrB and high Ni contents of ${\gamma}$-Ni was existed. For the joints brazed at a heating rate of $0.38^{\circ}C/min$, the height of filler was decreased from $100{\mu}m$ to $86{\mu}m$ showing the overflow of filler was not appeared. At the center of the joints, only ${\gamma}$-Ni was detected gradating the Ni contents from center. This phenomenon was driven from a diffusion amount of Boron in filler metal. With a fast heating rate $20^{\circ}C/min$, diffusion amount of B was so small that liquid state of filler metal and base metal were reacted. But, for a slow heating rate $0.38^{\circ}C/min$, solid state of filler metal due to low diffusion amount of B reacted with base metal as a solid diffusion bonding.

• 한국결정성장학회지
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• 제18권1호
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• pp.15-21
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• 2008

탄화규소(SiC)는 산화저항성, 내식성, 고온 강도 및 열전도 특성 등의 기계적 특성이 매우 우수한 재료로 알려져 있지만, 강한 공유결합성으로 인하여 그 소결이 매우 어려운 재료이다. 본 연구에서는 치밀한 탄화규소 소결체를 제조하기 위하여 카본 및 보론을 소결 첨가제로하여 열간 가압 소결법을 적용하여 탄화규소 소결체를 제작하여 그 특성을 평가하였다. 카본의 첨가는 탄화규소의 소결을 촉진하는 역할을 하여 비정상 입성장을 억제하기 때문에 미세하고 균일한 미세구조를 형성하였기 때문에 탄화규소 소결체의 기계적 특성을 향상시키는 것을 확인 할 수 있었다. 또한 차본의 첨가는 소결 중 보론의 첨가에 의해 발생하는 탄화규소의 6H 구조에서 4H 구조로의 상전이를 억제함을 알 수 있었다.

• 연구논문집
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• 통권29호
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• pp.141-149
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• 1999

Brazing of Fe-Cr-Al alloy was carried out at $1200^{\circ}C$ in vacuum furnace using nickel-based filler metals : BNi-5 powder(Ni-Cr-Si-Fe base alloy} and MBF-50 foil (Ni-Cr-Si-B). The effect of boron content on the stability of oxide scale on the brazed joint was investigated by means of cyclic oxidation test performed at $1050^{\circ}C$ and $1200^{\circ}C$. Apparently, the joints brazed with MBF-50 containing boron showed relatively stable oxidation rates compared to boron-free BNi-5 at both temperatures. However, it was considered that the slower weight loss of MBF-50 brazed specimen wasn’t resulted from the low oxidation rate but from the spallation of oxide layer. The oxide layer consisted of thick spinel oxide on the surface and $Al_2 O_3$ internal oxide layer along the interface between mother alloy and braze, the mother alloy was also eroded seriously by the formation of spinel oxides such as $FeCr_2 O_4$ and $NiCr_2 O_4$ on the surface, likely to be induced by the change of oxide forming mechanism due to diffusion of boron from the braze. On the contrary, the joint brazed with BNi-5 showed the good oxidation resistance during the cyclic oxidation test. It seems that the oxidation can be retarded by the formation of stable $Al_2 O_3$ layer at the surface.

• 한국세라믹학회지
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• 제44권8호
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• pp.445-450
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• 2007

A conversion layer of SiC was fabricated on the graphite substrate by a chemical vapor reaction method in order to enhance the oxidation resistance of graphite. The effect of boron carbide containing powder bed on the morphology of SiC conversion layer was investigated during the chemical vapor reaction of graphite with the reactive silicon-source at $1650^{\circ}C\;and\;1700^{\circ}C$ for 1 h. The presence of boron species enhanced the conversion of graphite into SiC, and altered the morphology of the conversion layer significantly as well. A continuous and thick SiC conversion layer was formed only when the boron source was used with the other silicon compounds. The boron is deemed to increase the diffusion of SiOx in SiC/C system.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2003년도 추계학술발표대회 개요집
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• pp.74-76
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• 2003

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.17-18
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• 2006

고상 확산 방법을 이용하여 얕은 소스/드레인 접합을 가지는 SOI (Silicon-On-Insulator) MOSFET 소자를 제작하였다. 확산원으로는 PSG(Phosphorus silicate glass) 박막과 PBF(Poly Boron Film) 박막이 각각 n, p-type 소자 형성을 위해 사용되었다. 얕은 접합 형성을 위하여 급속 열처리 방법(RTA: Rapid Thermal Annealing)을 이용하여 PSG와 PBF로부터 인과 붕소를 SOI MOSFET 소자의 소스/드레인으로 확산시켰다. 또한, 소자 특성 개선을 위한 후 속 열처리 공정으로 희석된 수소 분위기 중에서 FA(Furnace Annealing)를 실시하였다. SPD 기술을 적용하여 10 nm 이하의 매우 얕은 p-n 접합을 형성할 수 있었고, 양호한 다이오드 특성을 얻을 수 있었다. 또한, SPD 방법으로 결함이 없는 접합 형성이 가능하며, 소자 제작 공정의 최적화를 통해 차세대 CMOS 소자로 기대되는 SOI MOSFET를 성공적으로 제작할 수 있었다.

• 한국표면공학회지
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• 제52권2호
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• pp.53-57
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• 2019

Stability and activity of boron doped diamond (BDD) electrode are key factors for water treatment. In this study, BDD electrodes were prepared on various substrates such as Nb, Si, Ti, and $TiN_x/Ti$ by hot filament chemical vapor deposition (HFCVD) method. BDD/Ti film showed the delamination between BDD and Ti substrate due to the formation of TiC layer caused by diffusion of carbon. On the other hand, $BDD/TiN_x/Ti$ showed remarkably improved stability, compared to BDD/Ti. It was confirmed that $TiN_x$ intermediate layer act as barrier layer for diffusion of carbon. High potential window of 2.8 eV was maintained on the $BDD/TiN_x/Ti$ electrode and, better wastewater treatment capability and longer electrode working life than BDD/Nb, BDD/Si and BDD/Ti were obtained.

• 한국재료학회지
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• 제24권6호
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• pp.305-309
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• 2014

When sunlight irradiates a boron-doped p-type solar cell, the formation of BsO2i decreases the power-conversion efficiency in a phenomenon named light-induced degradation (LID). In this study, we used boron-doped p-type Cz-Si solar cells to monitor this degradation process in relation to irradiation wavelength, intensity and duration of the light source, and investigated the reliability of the LID effects, as well. When halogen light irradiated a substrate, the LID rate increased more rapidly than for irradiation with xenon light. For different intensities of halogen light (e.g., 1 SUN and 0.1 SUN), a lower-limit value of LID showed a similar trend in each case; however, the rate reached at the intensity of 0.1 SUN was three times slower than that at 1 SUN. Open-circuit voltage increased with increasing duration of irradiation because the defect-formation rate of LID was slow. Therefore, we suppose that sufficient time is needed to increase LID defects. After a recovery process to restore the initial value, the lower-limit open-circuit voltage exhibited during the re-degradation process showed a trend similar to that in the first degradation process. We suggest that the proportion of the LID in boron-doped p-type Cz-Si solar cells has high correlation with the normalized defect concentrations (NDC) of BsO2i. This can be calculated using the extracted minority-carrier diffusion-length with internal quantum efficiency (IQE) analysis.