• 한국분말야금학회:학술대회논문집
• /
• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
• /
• pp.306-307
• /
• 2006

The sinter-bonding behavior of iron based powder mixtures was investigated. To produce the green compacts to be joined the following powders based on $H{\ddot{o}}gan{\ddot{a}}s$ AB grade NC 100.24 plain iron powder were used: NC 100.24 as delivered, PNC 30, PNC 60 and NC 100.24 + 4%Cu powder mixtures. Dimensional behaviour of all those materials during the sintering cycle was monitored by dilatometry. Simple ring shaped specimens as the outer parts and cylindrical as the inner parts were pressed. The influence of parts' composition on joining strength was established. Diffusion of alloying elements: copper and phosphorous, across the bonding surface was controlled by metallography, SEM and microanalysis.

• 센서학회지
• /
• 제9권2호
• /
• pp.134-140
• /
• 2000

Si기판 직접접합기술은 전자소자 및 MEMS에의 응용에 있어 대단히 매력적인 기술이다. 본 논문에서는 Si기판 직접접합에 있어서 HF 전처리 조건에 따른 초기접합에 관하여 서술한다. 접합된 시료들의 특성은 HF 농도, 인가하중과 같이 각각의 접합조건하에서 분석하였으며, 접합력은 인장강도측정법에 의해 평가하였다. 계면상의 결합성분과 표면의 거칠기는 FT-IR과 AFM을 사용하여 평가하였다. HF 전처리 후 Si기판 표면상의 Si-F결합은 DI water에 세정하는 동안 Si-OH로 재배열되며, 결과적으로 hydrophobic 기판은 Si-OH$\cdots$(HOH$\cdots$HOH$\cdots$HOH)$\cdots$OH-S의 수소결합되어 hydrophilic화된다. 초기접합력은 초기접합전의 HF 전처리 조건에 의존한다. (최소 : $2.4kgf/cm^2{\sim}$최대 : $14.9kgf/cm^2$)

• 한국산학기술학회논문지
• /
• 제15권4호
• /
• pp.1879-1884
• /
• 2014

최근 미세접합 기술이 다양한 사회에서 주목받고 있다. 미세접합 기술은 레이저 접합 초음파 접합 등이 있다. 그러나 미세 접합의 연구가 많이 부족한 실정이다. 이에 본 논문에서는 초음파 접합장치 구동 시 열평형 상태에서 압전소자에 열영향을 최소화하기 위해 냉각관을 설계하였다. 또한 냉각관이 설계된 초음파 접합 장치를 이용하여 접합 실험을 실시하였다. 다꾸찌 실험계획법을 이용하여 실험을 실시하였으며, 기초실험을 통해 공정변수와 반응 변수를 설정하였다. 접합 실험의 신뢰도를 검증하기 위하여 접합 계면의 미세조직을 관찰하였고, 인장실험을 통해 접합 강도를 확인하였다.

• 한국레이저가공학회지
• /
• 제11권3호
• /
• pp.10-15
• /
• 2008

This study is aimed to analyse the laser glass bonding process numerically. Due to the viscoelastic behaviour of glass, the extremely large deformation of the frit seal is resulted continuously over the transition temperature, so that the thermal boundary condition be changed in the entire calculation process. The commercial FEM algorithm is restrictively able to remesh the large geometrical boundary shape and to adapt the boundary conditions simultaneously. According to our manual adaptation of increasing the laser line intensity to 700 mW/mm, it is possible to estimate the thermal glass bonding process under the fracture stress in principle. But it should be studied further in the case of high laser line intensity.

• 반도체디스플레이기술학회지
• /
• 제16권1호
• /
• pp.29-33
• /
• 2017

This paper presents a development of vision aligner with three channels for the wafer and plate bonding machine in manufacturing of LED. The developed vision aligner consists of three cameras and performs wafer alignment of rotation and translation, flipped wafer detection, and UV Tape detection on the target wafer and plate. Normally the process step of wafer bonding is not defined by standards in semiconductor's manufacturing which steps are used depends on the wafer types so, a lot of processing steps has many unexpected problems by the workers and environment of manufacturing such as the above mentioned. For the mass production, the machine operation related to production time and worker's safety so the operation process should be operated at one time with considering of unexpected problem. The developed system solved the 4 kinds of unexpected problems and it will apply on the massproduction environment.

• Journal of Welding and Joining
• /
• 제23권2호
• /
• pp.52-58
• /
• 2005

This study was carried out to investigate the effect of bonding temperature and heating rate on transient liquid phase diffusion bonding of Ni-base superalloy. The heating rate was varied by $0.1^{\circ}C$/sec, $1^{\circ}C$/sec, $10^{\circ}C$/sec to the bonding temperatures $1100^{\circ}C,\;1150^{\circ}C,\;1200^{\circ}C$ under vacuum. As bonding temperature increased, maximum dissolution width of base metal increased, but a dissolution finishing time decreased. The eutectic width of insert metal in the bonded interlayer decreased linearly in proportion to the square root of holding time during isothermal solidification stage. The bonding temperature was raised, isothermal solidification rate slightly increased. As the heating rate decreased and the bonding temperature increased, the completion time of dissolution after reaching bonding temperature decreased. When the heating rate was very slow, the solidification proceeded before reaching bonding temperature and the time required for the completion of isothermal solidification became reduced.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
• /
• pp.387-390
• /
• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for 2 inch SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECVD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using IR camera and SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of $5.3 kgf/cm^2$ to $15.5 kgf/cm^2$

• 마이크로전자및패키징학회지
• /
• 제20권1호
• /
• pp.7-13
• /
• 2013

3D 적층 IC 개발을 위한 본딩 기술의 현황에 대해 알아보았다. 실리콘 웨이퍼를 본딩하여 적층한 후 배선 공정을 진행하는 wafer direct bonding 기술보다는 배선 및 금속 범프를 먼저 형성한 후 금속 본딩을 통해 웨이퍼를 적층하는 공정이 주로 연구되고 있다. 일반적인 Cu 열압착 본딩 방식은 높은 온도와 압력을 필요로 하기 때문에 공정온도와 압력을 낮추기 위한 연구가 많이 진행되고 있으며, 그 가운데서 Ar 빔을 조사하여 표면을 활성화 시키는 SAB 방식과 실리콘 산화층과 Cu를 동시에 본딩하는 DBI 방식이 큰 주목을 받고 있다. 국내에서는 Cu 열압착 방식을 이용한 웨이퍼 레벨 적층 기술이 현재 개발 중에 있다.

• 마이크로전자및패키징학회지
• /
• 제22권4호
• /
• pp.15-23
• /
• 2015

Lead-free bonding has attracted significant attention for automotive power device packaging due to the upcoming environmental regulations. Silver (Ag) is one of the prime candidates for alternative of high Pb soldering owing to its superior electrical and thermal conductivity, low temperature sinterability, and high melting temperature after bonding. In this paper, the bonding technology by Ag paste was introduced. We classified into two Ag paste bonding according to applied pressure, and each bonding described in detail including recent studies.

• Journal of Welding and Joining
• /
• 제33권3호
• /
• pp.32-39
• /
• 2015

With the simplicity of process and high reliability in chip or package bonding, epoxy solder paste (ESP) has been recently considered as a competitive bonding material. The ESP material is composed of solder powder and epoxy formulation which can remove oxide layers on the surface of solder powder and pad finish metal. The bonding formed using ESP shows outstanding bonding strength and suppresses electrical short between adjacent pads or leads owing to the reinforced structure by cured epoxy after the bonding. ESP is also expected to suppress the formation and growth of whisker on the pads or leads. With the mentioned advantages, ESP is anticipated to become a spotlighted bonding material in the assembly of flexible electronics and electronic modules in automotive vehicles.