• 제목/요약/키워드: bonding technology

검색결과 1,566건 처리시간 0.034초

DeviceNet 을 채용한 GaAs 본딩 시스템의 통합 제어기술 (Integration and Control Technology of GaAs Bonding System using DeviceNet)

  • 송준엽;이승우;임선종;김원경;배영걸
    • 한국정밀공학회:학술대회논문집
    • /
    • 한국정밀공학회 2004년도 추계학술대회 논문집
    • /
    • pp.1376-1379
    • /
    • 2004
  • This study is designed integration and control system of GaAs bonding system consisted of multi-processing using DeviceNet and GEM-Protocol. Developing bonding system is composed of resin coating, pre-baking pre-aligner, bonding, material handler(flip robot), and wafer cassette, etc. This system has process-fluent of each a process and share information using GEM-protocol. This study devised virtual bonding simulator to control and to monitor bonding system efficiently. Also we can verify optimizing of system previously through a virtual bonding simulator.

  • PDF

Cu-Al 판재의 냉간 및 온간 압접에서 낮은 접합강도를 갖는 공정 조건에 관한 연구 (Process Conditions for Low Bonding Strength in Pressure Welding of Cu-Al Plates at Cold and Warm Temperatures)

  • 심경섭;이용신
    • 소성∙가공
    • /
    • 제13권7호
    • /
    • pp.623-628
    • /
    • 2004
  • This paper is concerned with pressure welding, which has been known as a main bonding mechanism during the cold and warm forming such as clad extrusion or bundle extrusion/drawing. Bonding characteristics between the Cu and Al plates by pressure welding are investigated focusing on the weak bonding. Experiments are performed at the cold and warm temperatures ranging from the room temperature to $200^{\circ}C$. The important factors examined in this work are the welding pressure, pressure holding time, surface roughness, and temperature. A bonding map, which can identify the bonding criterion with a weak bonding strength of IMPa , is proposed in terms of welding pressure and surface roughness fur the cold and warm temperature ranges.

Bonding between high strength rebar and reactive powder concrete

  • Deng, Zong-Cai;Jumbe, R. Daud;Yuan, Chang-Xing
    • Computers and Concrete
    • /
    • 제13권3호
    • /
    • pp.411-421
    • /
    • 2014
  • A central pullout test was conducted to investigate the bonding properties between high strength rebar and reactive powder concrete (RPC), which covered ultimate pullout load, ultimate bonding stress, free end initial slip, free end slip at peak load, and load-slip curve characteristics. The effects of varying rebar buried length, thickness of protective layer and diameter of rebars on the bonding properties were studied, and how to determine the minimum thickness of protective layer and critical anchorage length was suggested according the test results. The results prove that: 1) Ultimate pull out load and free end initial slip load increases with increase in buried length, while ultimate bonding stress and slip corresponding to the peak load reduces. When buried length is increased from 3d to 4d(d is the diameter of rebar), after peak load, the load-slip curve descending segment declines faster, but later the load rises again exceeding the first peak load. When buried length reaches 5d, rebar pull fracture occurs. 2) As thickness of protective layer increases, the ultimate pull out load, ultimate bond stress, free end initial slip load and the slip corresponding to the peak load increase, and the descending section of the curve becomes gentle. The recommended minimum thickness of protective layer for plate type members should be the greater value between d and 10 mm, and for beams or columns the greater value between d and 15 mm. 3) Increasing the diameter of HRB500 rebars leads to a gentle slope in the descending segment of the pullout curve. 4) The bonding properties between high strength steel HRB500 and RPC is very good. The suggested buried length for test determining bonding strength between high strength rebars and RPC is 4d and a formula to calculate the critical anchorage length is established. The relationships between ultimate bonding stress and thickness of protective layer or the buried length was obtained.

LCD 구동 IC의 실장을 위한 초음파 ACF접합 기술 (Ultrasonic ACF Bonding Technique for Mounting LCD Driver ICs)

  • 정상원;윤원수;김경수
    • 제어로봇시스템학회논문지
    • /
    • 제14권6호
    • /
    • pp.543-547
    • /
    • 2008
  • In the paper, we develop the ultrasonic bonding technique for LCD driver chips having small size and high pin-density. In general, the mounting technology for LCD driver ICs is a thermo-compression method utilizing the ACF (An-isotropic Conductive Film). The major drawback of the conventional approach is the long process time. It will be shown that the conventional ACF method based on thermo-compression can be remarkably enhanced by employing the ultrasonic bonding technique in terms of bonding time. The proposed approach is to apply the ultrasonic energy together with the thermo-compression methodology for the ACF bonding process. To this end, we design a bonding head that enables pre-heating, pressure and ultrasonic excitation. Through the bonding experiments mainly with LCD driver ICs, we present the procedures to select the best combination of process parameters with analysis. We investigate the effects of bonding pressure, bonding time, pre-heating temperature before bonding, and the power level of ultrasonic energy. The addition of ultrasonic excitation to the thermo-compression method reduces the pre-heating temperature and the bonding process time while keeping the quality bonding between the LCD pad and the driver IC. The proposed concept will be verified and demonstrated with experimental results.

저온 Cu/Ag-Ag/Cu 본딩에서의 Ag 나노막 효과 (Effect of Ag Nanolayer in Low Temperature Cu/Ag-Ag/Cu Bonding)

  • 김윤호;박승민;김사라은경
    • 마이크로전자및패키징학회지
    • /
    • 제28권2호
    • /
    • pp.59-64
    • /
    • 2021
  • 차세대 반도체 기술은 이종소자 집적화(heterogeneous integration)를 이용한 시스템-인-패키징(system-inpackage, SIP) 기술로 발전하고 있고, 저온 Cu 본딩은 SIP 구조의 성능 향상과 미세 피치 배선을 위해서 매우 중요한 기술이라 하겠다. 본 연구에서는 porous한 Ag 나노막을 이용하여 Cu 표면의 산화 방지 효과와 저온 Cu 본딩의 가능성을 조사하였다. 100℃에서 200℃의 저온 영역에서 Ag가 Cu로 확산되는 것보다 Cu가 Ag로 확산되는 것이 빠르게 관찰되었고, 이는 저온에서 Ag를 이용한 Cu간의 고상 확산 본딩이 가능함을 나타내었다. 따라서 Ag 나노막을 이용한 Cu 본딩을 200℃에서 진행하였고, 본딩 계면의 전단 강도는 23.27 MPa로 측정되었다.

반도체 3차원 칩 적층을 위한 미세 범프 조이닝 기술 (Micro-bump Joining Technology for 3 Dimensional Chip Stacking)

  • 고영기;고용호;이창우
    • 한국정밀공학회지
    • /
    • 제31권10호
    • /
    • pp.865-871
    • /
    • 2014
  • Paradigm shift to 3-D chip stacking in electronic packaging has induced a lot of integration challenges due to the reduction in wafer thickness and pitch size. This study presents a hybrid bonding technology by self-alignment effect in order to improve the flip chip bonding accuracy with ultra-thin wafer. Optimization of Cu pillar bump formation and evaluation of various factors on self-alignment effect was performed. As a result, highly-improved bonding accuracy of thin wafer with a $50{\mu}m$ of thickness was achieved without solder bridging or bump misalignment by applying reflow process after thermo-compression bonding process. Reflow process caused the inherently-misaligned micro-bump to be aligned due to the interface tension between Si die and solder bump. Control of solder bump volume with respect to the chip dimension was the critical factor for self-alignment effect. This study indicated that bump design for 3D packaging could be tuned for the improvement of micro-bonding quality.

Bonding And Anti-bonding Nature of Magnetic Semiconductor Thin Film of Fe(TCNQ:tetracyanoquinodimethane)

  • Jo, Junhyeon;Jin, Mi-jin;Park, Jungmin;Modepalli, Vijayakumar;Yoo, Jung-Woo
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
    • /
    • pp.294-294
    • /
    • 2014
  • Developing magnetic thin films with desirable physical properties is a key step to promote research in spintronics. Organic-based magnetic material is a relatively new kind of materials which has magnetic properties in a molecular and microscopic level. These materials have been constructed by the coordination between 3d transition metal and organic materials producing long-range magnetic orders with a relatively high transition temperature. However, these materials were mostly synthesized as a form of powder, which is difficult to study for their physical properties as well as apply for electronic/spintronic devices. In this study, we have employed physical vapor deposition (PVD) to develop a new organic-based hybrid magnetic film that is achieved by the coordination of Fe and tetracyanoquinodimethane (TCNQ). The IR spectra of the grown film show modified CN vibration modes in TCNQ, which suggest a strong bonding between Fe and TCNQ. The thin film has both ferromagnetic and semiconducting behaviors, which is suitable for molecular spintronic applications. The high resolution photoemission (HRPES) spectra also show shift of 1s peak point of nitrogen and the carbon 1s peaks display traces of charge transfer from Fe to TCNQ as well as shake-up features, which suggest strong bonding and anti-bonding nature of coordination between Fe and TCNQ.

  • PDF

Collective laser-assisted bonding process for 3D TSV integration with NCP

  • Braganca, Wagno Alves Junior;Eom, Yong-Sung;Jang, Keon-Soo;Moon, Seok Hwan;Bae, Hyun-Cheol;Choi, Kwang-Seong
    • ETRI Journal
    • /
    • 제41권3호
    • /
    • pp.396-407
    • /
    • 2019
  • Laser-assisted bonding (LAB) is an advanced technology in which a homogenized laser beam is selectively applied to a chip. Previous researches have demonstrated the feasibility of using a single-tier LAB process for 3D through-silicon via (TSV) integration with nonconductive paste (NCP), where each TSV die is bonded one at a time. A collective LAB process, where several TSV dies can be stacked simultaneously, is developed to improve the productivity while maintaining the reliability of the solder joints. A single-tier LAB process for 3D TSV integration with NCP is introduced for two different values of laser power, namely 100 W and 150 W. For the 100 W case, a maximum of three dies can be collectively stacked, whereas for the 150 W case, a total of six tiers can be simultaneously bonded. For the 100 W case, the intermetallic compound microstructure is a typical Cu-Sn phase system, whereas for the 150 W case, it is asymmetrical owing to a thermogradient across the solder joint. The collective LAB process can be realized through proper design of the bonding parameters such as laser power, time, and number of stacked dies.

미세 부품의 초음파 접합공정 개발 (Development of Ultrasonic Bonding Process for Micro Components)

  • 김정호;이지혜;유중돈;최두선
    • 소성∙가공
    • /
    • 제11권7호
    • /
    • pp.596-600
    • /
    • 2002
  • The ultrasonic bonding method and its feasibility are investigated in this work for joining the micro components and MEMS packaging. The ultrasonic bonding process is analyzed using a lumped mode, and preliminary experiments using the eutectic solder and copper pin were carried out to verify possibility to MEMS packaging. The ultrasonic bonding process appears to be adequate for MEMS packaging by providing localized heating at the selected area. Microscopic behavior of the bond joint through ultrasonic vibration needs further investigation.

TSV 기반 3차원 반도체 패키지 ISB 본딩기술 (ISB Bonding Technology for TSV (Through-Silicon Via) 3D Package)

  • 이재학;송준엽;이영강;하태호;이창우;김승만
    • 한국정밀공학회지
    • /
    • 제31권10호
    • /
    • pp.857-863
    • /
    • 2014
  • In this work, we introduce various bonding technologies for 3D package and suggest Insert-Bump bonding (ISB) process newly to stack multi-layer chips successively. Microstructure of Insert-Bump bonding (ISB) specimens is investigated with respect to bonding parameters. Through experiments, we study on find optimal bonding conditions such as bonding temperature and bonding pressure and also evaluate in the case of fluxing and no-fluxing condition. Although no-fluxing bonding process is applied to ISB bonding process, good bonding interface at $270^{\circ}C$ is formed due to the effect of oxide layer breakage.