Collective laser-assisted bonding process for 3D TSV integration with NCP |
Braganca, Wagno Alves Junior
(Department of Advanced Device Technology, University of Science and Technology)
Eom, Yong-Sung (ICT Materials and Components Laboratory, ETRI) Jang, Keon-Soo (Department of Chemical and Materials Engineering (Polymer), The University of Suwon) Moon, Seok Hwan (ICT Materials and Components Laboratory, ETRI) Bae, Hyun-Cheol (ICT Materials and Components Laboratory, ETRI) Choi, Kwang-Seong (Department of Advanced Device Technology, University of Science and Technology) |
1 | P. Garrou, C. Bower, and P. Ramm, Handbook of 3d integration: Volume 1‐technology and applications of 3D integrated circuits, John Wiley & Sons, Hoboken, NJ, 2011, pp.13-24. |
2 | T. Nonaka et al., High throughput thermal compression NCF bonding, in Electron. Compon. Technol. Conf. (ECTC), Orlando, FL, USA, May 2014, pp. 913-918. |
3 | K. Matsumura et al., New non conductive film for high productivity process, in IEEE CPMT Symp. Japan (ICSJ), Kyoto, Japan, Nov. 2015, pp. 19-20. |
4 | H. G. Lee et al., Effects of thermocompression bonding parameters on Cu Pillar/Sn‐Ag microbump solder joint morphology using nonconductive films, IEEE Trans. Compon. Packag. Manuf. Technol. 7 (2017), 450-455. DOI |
5 | A. Tong and F. Qin, Effects of the intermetallic compound microstructure on the tensile behavior of Sn3.0Ag0.5Cu/Cu solder joint under various strain rates, Microelectron. Reliab. 54 (2014), 932-938. DOI |
6 | N. Asahi et al., High productivity thermal compression bonding for 3D‐IC, in IEEE 3D Syst. Integr. Conf. (3DIC), Sendai, Japan, 2015, pp. TS7.3:1-5. |
7 | N. Asahi, 3D‐IC thermo‐compression collective bonding process using high temperature stage, in IEEE Int. Conf. in Electron. Packag. (ICEP), Yamagata, Japan, Apr. 2017, pp. 536-529. |
8 | C. H. Kim et al., Development of extremely thin profile flip chip CSP using laser assisted bonding technology, in IEEE CPMT Symp. Japan (ICSJ), Kyoto, Japan, 2017, pp. 45-49. |
9 | A. B. Lim et al., High throughput thermo‐compression bonding with pre‐applied underfill for 3D memory applications, in IEEE Electron. Packag. Technol. Conf. (EPTC), Singapore, 2016, pp. 427-434. |
10 | Y. G. Jung et al., Development of next generation flip chip interconnection technology using homogenized laser‐assisted bonding, in IEEE Electron. Comp. Technol. Conf. (ECTC), Las Vegas, NV, USA, 2016, pp. 88-94. |
11 | K.‐S. Choi et al., Development of stacking process for 3D TSV (through silicon via) structure using laser, in Int. Symp. Microelectron. Assembly Packaging soc. (IMAPS), Raleigh, NC, USA, Oct. 9 -12, 2017, pp. 67-71 |
12 | Y.‐S. Eom et al., Characterization of fluxing and hybrid underfills with micro‐encapsulated catalyst for long pot life, ETRI J. 36 (2014), no. 3, 343-351. DOI |
13 | J. Piprek, Dielectric function, Semiconductor optoelectronic devices: Introduction to physics and simulation, Elsevier, San Diego, CA, 2013, pp. 87-91. |
14 | C. Tams and C. Enjalbert. The use of UV/Vis/NIR spectroscopy in the development of photovoltaic cells, PerkinElmer Resources, Feb. 18, 2018, available at https://www.perkinelmer.com/lab-solutions/resources/docs/APP_UseofUVVisNIRinDevelopmentPV.pdf. |
15 | F. Padera. Measuring absorptance (k) and refractive index (n) of thin films with the PerkinElmer LAMBDA 950/1050 high performance UV/Vis/NIR spectrometers, Feb. 18, 2018, available at https://www.perkinelmer.com/lab-solutions/resources/docs/APP_Thin-films.pdf. |
16 | J. Piprek, Heat generation and dissipation, Semiconductor optoelectronic devices: Introduction to physics and simulation, Elsevier, San Diego, CA, 2013, pp. 145-147. |
17 | W. A. Braganca, Properties of NCP with different silica filler for 3D TSV multi‐stack integration, Master Dissertation, University of Science and Technology, 2017. |
18 | W. Frei, Modeling laser‐material interactions with the Beer‐Lambert Law, COMSOL BLOG, 2016, Dec. 21, 2017, available at https://br.comsol.com/blogs/modeling-laser-material-interactions-with-the-beer-lambert-law/. |
19 | M. A. Green and M. J. Keevers, Optical properties of intrinsic silicon at 300 K, Prog. Photovoltaics 3 (1995), no. 3, 189-192. DOI |
20 | K. Rajkanan, R. Singh, and J. Shewchun, Absorption coefficient of silicon for solar cell calculations, Solid‐State Electron. 22 (1979), no. 9, 793-795. DOI |
21 | N. Zhao et al., Growth kinetics of Cu6Sn5 intermetallic compound at liquid‐solid interfaces in Cu/Sn/Cu interconnects under temperature gradient, Sci. Rep. 5 (2015), 1-5. |
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