Browse > Article
http://dx.doi.org/10.6117/kmeps.2021.28.2.059

Effect of Ag Nanolayer in Low Temperature Cu/Ag-Ag/Cu Bonding  

Kim, Yoonho (Department of Protection and Safety Engineering, Seoul National University of Science and Technology)
Park, Seungmin (Department of Protection and Safety Engineering, Seoul National University of Science and Technology)
Kim, Sarah Eunkyung (Department of Nano-IT Convergence Engineering, Seoul National University of Science and Technology)
Publication Information
Journal of the Microelectronics and Packaging Society / v.28, no.2, 2021 , pp. 59-64 More about this Journal
Abstract
System-in-package (SIP) technology using heterogeneous integration is becoming the key of next-generation semiconductor packaging technology, and the development of low temperature Cu bonding is very important for high-performance and fine-pitch SIP interconnects. In this study the low temperature Cu bonding and the anti-oxidation effect of copper using porous Ag nanolayer were investigated. It has been found that Cu diffuses into Ag faster than Ag diffuses into Cu at the temperatures from 100℃ to 200℃, indicating that solid state diffusion bonding of copper is possible at low temperatures. Cu bonding using Ag nanolayer was carried out at 200℃, and the shear strength after bonding was measured to be 23.27 MPa.
Keywords
Ag nanolayer; Cu bonding; 3D packaging; metal passivation; solid state diffusion;
Citations & Related Records
연도 인용수 순위
  • Reference
1 Z. Y. Liu, J. Cai, Q. Wang, L. Tan, and Y. Hu, "Low temperature Cu-Cu bonding using Ag nanostructure for 3D integration", ECS Solid State Lett., 4, 75-76 (2015).
2 T. Chou, S. Huang, P. Chen, H. Hu, D. Liu, C. Chang, T. Ni, C. Chen, Y. Lin, T. Chang, and K. Chen, "Electrical and Reliability Investigation of Cu-to-Cu Bonding with Silver Passivation Layer in 3D Integration", IEEE Trans. Comp. Packag. Manufact. Technol., 11(1), 36-42 (2020).
3 A. K. Panigrahi and K. N. Chen, "Low Temperature Cu-Cu Bonding Technology in 3D Integration: An Extensive Review.", J. Electron. Packag., 140(1), 010801 (2017).   DOI
4 P. Ramm, J. J. Lu, and M. M.V. Taklo, "Cu/SiO2 hybrid bonding.", John Wiley & Son, Handbook of Wafer Bonding, 237-259 (2012).
5 S. Choa, B. H. Ko, and H. Lee, "Recent Trends of MEMS Packaging and Bonding Technology." J. Microelectron. Packag. Soc., 24.4, 9-17 (2017).   DOI
6 C. S. Tan, D. F. Lim, X. F. Ang, J. Wei, and K. C. Leong, "Low temperature Cu-Cu thermo-compression bonding with temporary passivation of self-assembled monolayer and its bond strength enhancement.", Microelectron. Reliab., 52.2, 321-324 (2012).   DOI
7 S. L. Chua, J. M. Chan, S. C. K. Goh, and C. S. Tan, "Cu-Cu bonding in ambient environment by Ar/N2 plasma surface activation and its characterization", IEEE Trans. Comp. Packag. Manufact. Technol., 9(3), 596-605 (2018).   DOI
8 H. Park, H. Seo, Y. Kim, S. Park, and S. E. Kim, "Low Temperature (260℃) Solderless Cu-Cu Bonding for Fine Pitch 3D Packaging and Heterogeneous Integration", IEEE Trans. Comp. Packag. Manufact. Technol., 11(4), 565 - 572 (2021).   DOI
9 H. Park and S. E. Kim, "Two-Step Plasma Treatment on Copper Surface for Low-Temperature Cu Thermo-Compression Bonding", IEEE Trans. Comp. Packag. Manufact. Technol., 10(2), 332-338 (2018).   DOI
10 H. Seo, H. Park, and S. E. Kim, "Cu-SiO2 Hybrid Bonding", J. Microelectron. Packag. Soc., 27(1), 17-24 (2020).
11 S. Bonam, A. K. Panigrahi, C. H. Kumar, and S. R. K. Vanjari, "Interface and Reliability Analysis of Au-Passivated Cu-Cu Fine-Pitch Thermocompression Bonding for 3-D IC Applications", IEEE Trans. Comp. Packag. Manufact. Technol., 9(7), 1227-1234 (2019).   DOI
12 J. Lu and K. Rose, "3D Integration: Why, What, Who, When?", Future Fab International, 23, 25-27 (2007).
13 C. S. Tan, R. J. Gutmann, and L. R. Reif, "Overview of Wafer Level 3D ICs, in Wafer Level 3-D ICs Process Technology", 1-11, Springer, New York (2008).
14 M. Kim and H. Nishikawa, "Silver nanoporpus sheet for solid-state die attach in power device packaging", Scripta Mater., 92, 43-46 (2014).   DOI
15 M.X. Chen, X. H. Song, Z. Y. Fan, and S. Liu, "Low temperature thermo compression bonding between aligned carbon nanotubes and metallized substrate", Nanotechnology, 22, 345704 (2011).   DOI
16 Y. Huang, Y. Chien, R. Tzeng, M. Shy, T. Lin, K. Chen, C. Chiu, and J. Chiou. "Novel Cu-to-Cu Bonding with Ti Passivation at 180℃ in 3-D Integration", IEEE Electron Dev. Lett., 34(12), 1551-1553 (2013).   DOI
17 Z. Liu, J. Cai, Q. Wang, Z. Wang, L. Liu, and G. Zou, "Thermal-stable void-free interface morphology and bonding mechanism of low-temperature Cu-Cu bonding using Ag nanostructure as intermediate", J. Alloys and Compounds, 767, 575-582 (2018).   DOI
18 "Chapter 21 SiP and module system integration" and "Chapter 22 interconnects for 3D and 3D architectures", Heterogeneous Integration Roadmap (2020) from http://eps.ieee.org/hir