1 |
Z. Y. Liu, J. Cai, Q. Wang, L. Tan, and Y. Hu, "Low temperature Cu-Cu bonding using Ag nanostructure for 3D integration", ECS Solid State Lett., 4, 75-76 (2015).
|
2 |
T. Chou, S. Huang, P. Chen, H. Hu, D. Liu, C. Chang, T. Ni, C. Chen, Y. Lin, T. Chang, and K. Chen, "Electrical and Reliability Investigation of Cu-to-Cu Bonding with Silver Passivation Layer in 3D Integration", IEEE Trans. Comp. Packag. Manufact. Technol., 11(1), 36-42 (2020).
|
3 |
A. K. Panigrahi and K. N. Chen, "Low Temperature Cu-Cu Bonding Technology in 3D Integration: An Extensive Review.", J. Electron. Packag., 140(1), 010801 (2017).
DOI
|
4 |
P. Ramm, J. J. Lu, and M. M.V. Taklo, "Cu/SiO2 hybrid bonding.", John Wiley & Son, Handbook of Wafer Bonding, 237-259 (2012).
|
5 |
S. Choa, B. H. Ko, and H. Lee, "Recent Trends of MEMS Packaging and Bonding Technology." J. Microelectron. Packag. Soc., 24.4, 9-17 (2017).
DOI
|
6 |
C. S. Tan, D. F. Lim, X. F. Ang, J. Wei, and K. C. Leong, "Low temperature Cu-Cu thermo-compression bonding with temporary passivation of self-assembled monolayer and its bond strength enhancement.", Microelectron. Reliab., 52.2, 321-324 (2012).
DOI
|
7 |
S. L. Chua, J. M. Chan, S. C. K. Goh, and C. S. Tan, "Cu-Cu bonding in ambient environment by Ar/N2 plasma surface activation and its characterization", IEEE Trans. Comp. Packag. Manufact. Technol., 9(3), 596-605 (2018).
DOI
|
8 |
H. Park, H. Seo, Y. Kim, S. Park, and S. E. Kim, "Low Temperature (260℃) Solderless Cu-Cu Bonding for Fine Pitch 3D Packaging and Heterogeneous Integration", IEEE Trans. Comp. Packag. Manufact. Technol., 11(4), 565 - 572 (2021).
DOI
|
9 |
H. Park and S. E. Kim, "Two-Step Plasma Treatment on Copper Surface for Low-Temperature Cu Thermo-Compression Bonding", IEEE Trans. Comp. Packag. Manufact. Technol., 10(2), 332-338 (2018).
DOI
|
10 |
H. Seo, H. Park, and S. E. Kim, "Cu-SiO2 Hybrid Bonding", J. Microelectron. Packag. Soc., 27(1), 17-24 (2020).
|
11 |
S. Bonam, A. K. Panigrahi, C. H. Kumar, and S. R. K. Vanjari, "Interface and Reliability Analysis of Au-Passivated Cu-Cu Fine-Pitch Thermocompression Bonding for 3-D IC Applications", IEEE Trans. Comp. Packag. Manufact. Technol., 9(7), 1227-1234 (2019).
DOI
|
12 |
J. Lu and K. Rose, "3D Integration: Why, What, Who, When?", Future Fab International, 23, 25-27 (2007).
|
13 |
C. S. Tan, R. J. Gutmann, and L. R. Reif, "Overview of Wafer Level 3D ICs, in Wafer Level 3-D ICs Process Technology", 1-11, Springer, New York (2008).
|
14 |
M. Kim and H. Nishikawa, "Silver nanoporpus sheet for solid-state die attach in power device packaging", Scripta Mater., 92, 43-46 (2014).
DOI
|
15 |
M.X. Chen, X. H. Song, Z. Y. Fan, and S. Liu, "Low temperature thermo compression bonding between aligned carbon nanotubes and metallized substrate", Nanotechnology, 22, 345704 (2011).
DOI
|
16 |
Y. Huang, Y. Chien, R. Tzeng, M. Shy, T. Lin, K. Chen, C. Chiu, and J. Chiou. "Novel Cu-to-Cu Bonding with Ti Passivation at 180℃ in 3-D Integration", IEEE Electron Dev. Lett., 34(12), 1551-1553 (2013).
DOI
|
17 |
Z. Liu, J. Cai, Q. Wang, Z. Wang, L. Liu, and G. Zou, "Thermal-stable void-free interface morphology and bonding mechanism of low-temperature Cu-Cu bonding using Ag nanostructure as intermediate", J. Alloys and Compounds, 767, 575-582 (2018).
DOI
|
18 |
"Chapter 21 SiP and module system integration" and "Chapter 22 interconnects for 3D and 3D architectures", Heterogeneous Integration Roadmap (2020) from http://eps.ieee.org/hir
|