• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1996년도 추계학술대회 논문집
• /
• pp.338-341
• /
• 1996

Anodic bonding is a key technology for micromechanical components. The main advantages of this method can be formed in a batch process, over large areas, and is permanent and irreversible. In this paper, the bonding was performed at temperatures ranging from 300 to 450 $^{\circ}C$, voltages 400 to 1000 V, and times 10 to 30 minutes. The sizes of the Si and the Pyrex #7740 glass were 6 mm $\times$6 mm, respectively. Bonding processes and voids were observed by the optical microscope, and the composition of the anodic bonding interface was analyzed by the SIMS. Optimum condition of the anodic bonding was at temperature above 40$0^{\circ}C$ without regard to voltage.

• 한국건축시공학회:학술대회논문집
• /
• 한국건축시공학회 2020년도 가을 학술논문 발표대회
• /
• pp.153-154
• /
• 2020

This study aims to find out the reason that tile adhesive(type III) for ceramic tile does not harden under some conditions especially high humidity even though long curing time. Bonding strength of adhesive between substrate and ceramic tile is evaluated depending on bonding conditions such as substrate kind(concrete, board), bonding material (tile adhesive, tile cement) and curing condition(humidity 50, 70%). Based on the results, this study aimed to establish the quality of tile adhesion strength under the relevant conditions.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
• /
• pp.387-390
• /
• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for 2 inch SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECVD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using IR camera and SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of $5.3 kgf/cm^2$ to $15.5 kgf/cm^2$

• 구강회복응용과학지
• /
• 제32권4호
• /
• pp.293-300
• /
• 2016

목적: 중합방식과 화학적 조성이 다른 본딩제들이 자가중합형 비스아크릴 임시수복 재료의 결합에 미치는 영향을 알아 보고자 하였다. 연구 재료 및 방법: 원반 형태의 비스아크릴 임시수복 재료 시편 40개를 준비한 후 본딩제의 중합특성에 따라 대조군을 포함 4개의 군으로 나누었다. 본딩제 도포 후 직경 4 mm의 원형 구멍을 가진 4 mm 두께의 테플론 몰드를 이용하여 동일한 비스아크릴 임시수복 재료을 첨상하였다. 전단결합강도시험을 시행하였으며 파절면을 현미경으로 관찰하였다. 일원배치 분산분석과 Tukey 사후분석을 사용하여 유의수준 0.05로 검증하였다. 결과: 화학중합형 본딩제를 사용한 군에서 통계적으로 유의한 가장 높은 전단결합강도를 보였으며($27.36{\pm}4.30 MPa$, P < 0.05) 모든 시편에서 비스아크릴 임시수복 재료 내에서 파절이 일어나는 응집성 파절 양상을 보였다(100%). 실험군중 가장 낮은 값은 광중합형 본딩제를 사용한 군에서 기록되었으며($13.29{\pm}2.56 MPa$) 이는 대조군과 거의 유사한 값을 보였다. 동일한 광중합 방식 이지만 화학중합 레진과의 호환성을 높인 본딩제를 사용한 군에서는 광중합형 본딩제를 사용한 군에 비해 통계적으로 유의하게 높은 값을 보였다(P = 0.043). 결론: 본딩제의 종류가 수리된 비스아크릴 임시수복 재료의 전단결합 강도에 영향을 주며, 비스아크릴 임시수복 재료의 수리 시 적절한 본딩제 선택이 중요하다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.228-228
• /
• 2008

본 논문에서는 epoxy bonding film의 phenoxy resin의 함량변화에 따른 특성 변화에 대하여 연구하였다. epoxy bonding film은 미세패턴 구현을 위해서 사용되는 기판재료로써 epoxy, hardener, silica, phenoxy resin 등이 첨가되어진다. phenoxy resin 함량을 변화를 주면서 tape casting 방법을 통해서 flim 형성을 한 후, 제작된 film의 phenoxy resin 함량변화에 따른 조도 특성의 연구를 위해서 sweller, desmear 공정을 후 RA(Roughness Average)를 측정하고, SEM으로 표면을 관찰하였다. 또한 제작된 bonding film을 가열 가압 후 구리 도금공정을 거쳐 peel strength를 측정하였다. phenoxy resin 함량이 증가 할수록 RA가 증가되어지는 것이 관찰되어졌고, 또 한 peel strength 증가하였다.

• 한국전기전자재료학회논문지
• /
• 제16권5호
• /
• pp.365-371
• /
• 2003

We prepared silicon on insulator(SOI) wafer pairs of Si/1800${\AA}$ -SiO$_2$ ∥ 1800${\AA}$ -SiO$_2$/Si using water direct bonding method. Wafer pairs bonded at room-temperature were annealed by a normal furnace system or a fast linear annealing(FLA) equipment, and the micro-structure of bonding interfaces for each annealing method was investigated. Upper wafer of bonded pairs was polished to be 50 $\mu\textrm{m}$ by chemical mechanical polishing(CMP) process to confirm the real application. Defects and bonding area of bonded water pairs were observed by optical images. Electrical and mechanical properties were characterized by measuring leakage current for sweeping to 120 V, and by observing the change of wafer curvature with annealing process, respectively. FLA process was superior to normal furnace process in aspects of bonding area, I-V property, and stress generation.

• 한국전기전자재료학회논문지
• /
• 제15권10호
• /
• pp.883-888
• /
• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECYD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of 5.3 kgf/cm$^2$to 15.5 kgf/cm$^2$.

• 한국전기전자재료학회논문지
• /
• 제30권10호
• /
• pp.615-624
• /
• 2017

This study investigated the various physical and electrical effects of silicon direct bonding. Direct bonding means the joining of two wafers together without an intermediate layer. If the surfaces are flat, and made clean and smooth using HF treatment to remove the native oxide layer, they can stick together when brought into contact and form a weak bond depending on the physical forces at room temperature. An IR camera and acoustic systems were used to analyze the voids and bonding conditions in an interface layer during bonding experiments. The I-V and C-V characteristics are also reported herein. The capacitance values for a range of frequencies were measured using a LCR meter. Direct wafer bonding of silicon is a simple method to fuse two wafers together; however, it is difficult to achieve perfect bonding of the two wafers. The direct bonding technology can be used for MEMS and other applications in three-dimensional integrated circuits and special devices.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
• /
• pp.303-304
• /
• 2005

In this paper, we report a fluxless eutectic die bonding process which uses 80Au-20Sn eutectic alloy. The chip LEDs are picked and placed on silicon substrate wafers. The bonding process temperatures and force are $305\sim345^{\circ}C$ and 10$\sim$100gf, respectively. The bonding process was performed on graphite heater with nitrogen atmosphere. The quality of bonding are evaluated by shear test and thermal resistance. Results of fluxless eutectic die bonding show that shear strength is Max. 3.85kgf at 345$^{\circ}C$ /100gf and thermal resistance of junction to die bonding is Min. 3.09K/W at 325$^{\circ}C$/100gf.

• International Journal of Advanced Culture Technology
• /
• 제8권2호
• /
• pp.246-251
• /
• 2020

Dimethyl Ether(DME) engine use a highly efficient alternative fuel having a great quantity of oxygen and has a advantage no polluting PM gas. The existing DME fuel cam material is a highly expensive carbide alloy, and it is difficult to take a price advantage. Therefore the study of replacing body area with inexpensive steel material excluding piston shoe and contact area which demands high characteristics is needed. The development of WC-Ni base carbide alloy optimal bonding composition technique was accomplished in this study. To check out the influence of bonding temperature and time, bonding characteristics of sintering temperature was experimented. The hardness of specimen and bonding rate were measured using ultrasound equipment. The bonding state of each condition was excellent, and the thickness of mid-layer, temperature and maintaining time were measured. The mid-layer thickness according to bonding temperature and maintaining time were observed with optical microscope. We analyzed the micro-structural analysis, formation of bonding specimen, wafer fabrication and fuel cam abrasion test. Throughout this study, we confirmed that the fuel cam for DME engine which demands high durability against velocity and pressure is excellent.