• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.12
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• pp.2609-2614
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• 2010

Temperature compensation circuit is implemented by using the temperature sensor, and Intermodulation (IM) Specification of Power Amplifier is satisfied in the temperature range of $-30^{\circ}C{\sim}60^{\circ}C$ with this temperature compensation circuit. The output voltage of temperature compensation circuit which vary 170mV with the temperature is applied to the gate of TR in 3W output power Amplifier. As the result, right 3rd IM component is -18.5~-26dBm, left 3rd IM component is -18.5~-35dBm, and the left and right 5th IM component is -24~-26dBm in the temperature range of $-30^{\circ}C{\sim}60^{\circ}C$. It is confirmed that IM specification of power amplifier which is under -17dBm in the whole temperature range is satisfied.

• Proceedings of the Korean Society of Sericultural Science Conference
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• 1997.06a
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• pp.73-101
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• 1997

Baculoviruses are characterized by large double-stranded circular DNA genomes and rod-shaped enveloped virions. Bombyx mori nucleopolyhedrovirus(BmNPV) is a major pathogen, which causes severe damage in sericulture. Currently, BmNPV is recogtnized as an improtant tool in molecular biology, especially for expression of useful genes in B.mori cells and silkworm larvae. Our laboratories have focused on the studies of the molecular mechanisms of BmNPV replication and the application of BmNPV to agriculture and medicine. The entire nucleotide sequence of the BmNPV genome has recently determined. The BmNPV genome possessed 135 putative genes and 7 homologous repeated sequence (hrs) regions. Relatively little space, a few to a few hundred base-pairs, was observed between the open reading frames and hrs. Termination codons often overlapped. These results showed a compactly packde BmNPV genome. Based on comparative sequence analyses, we speculated that the ancestor of BmNPV was a baculovirus similar to Autographa californica NPV(AcNPV). The function of the BmNPV genes were characterized by gene deletion analysis; p35 was found to be involved in blocking apoptosis and cysteine proteinase was found to be involved in horizontal virus transmission by degrading viral-infected larval host. By AcNPV and BmNPV coinfection experiments, we identified a BmNPV gene involved in expanding host specificity of AcNPV. The identified gene was likely encoded a DNA helicase based on the amino acid sequence analysis; a few amino acid substitutions in the putative DNA helicase gene resulted in the expansion of host range of AcNPV. These findings indicate that BmNPV evolved within a short period from an AcNPV-like ancestral virus due to rapid evolution including specific amino acid substitutions and gene deletions/insertions.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.2
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• pp.262-265
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• 2012

In this paper, a Ka-band 8 W power amplifier module with WR-28 waveguide input and output ports is implemented and measured using four 2 W power amplifier modules and 4:1 waveguide power combiners with high isolation of 25 dB at 35 GHz. The 2 W power amplifier modules are fabricated using waveguide-to-microstrip transitions and show output power of 32.5~33.3 dBm and power gain of 26.9~28.7 dB at 35 GHz. Four 2 W power amplifier modules are combined through 4:1 waveguide power combiners with resistive septum and the combined power shows 39.0 dBm(8 W) under 6 V drain bias and 39.6 dBm(9.1 W) under 6.5 V drain bias at 35 GHz.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.11
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• pp.48-53
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• 2012

In this paper designed J-class amplifier that have high efficiency using parasitic of pHEMT. Measured results of the designed J-class amplifier is maxmum output power of 31.5dBm and gain of 16.5dB, minimum output power of 29.8dBm. when input power 15dBm. Maxmum drain efficiency is 76.2% at 2.95GHz, maxmum drain efficiency is 61%. The J-class amplifier has average gain of 15.35dB and average efficiency of 35%.

• International Journal of Industrial Entomology and Biomaterials
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• v.9 no.1
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• pp.35-40
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• 2004

Bombyx mori densonucleosis virus type 1 (BmDNV1)- a non occluded virus causes flacherie disease in the susceptible stocks of the silkworm, Bombyx mori. However, some stocks are non-susceptible. Non-susceptibility to BmDNV1 in B. mori is a unique case where the virus infection is completely inhibited by a single gene of the host. A survey conducted by this institute in some parts of Karnataka state has revealed that, 43.05% of the total incidence of flacherie disease caused by non-occluded viruses, are due to the synergistic infection of B. mori densonucleosis and infectious flacherie virus. Earlier study indicated that rearing of BmDNV1 resistant silkworm stock is effective in protecting silkworm against BmIFV also. In the present study the response of 78 silkworm stocks which include 42 of non-diapausing and 36 of diapausing groups, to BmDNV1 is investigated. Newly ecdysed third instar larvae were inoculated per-os with 10% inoculum of BmDNV1 extracted from the mid-gut of infected silkworm. One non-diapausing and three diapausing silkworm stocks were found to be resistant to BmDNV1. Eleven silkworm stocks were found to possess moderate resistance whereas rest sixty three were found to be susceptible to BmDNV1. Genetic analysis has shown that the resistance to BmDNV1 is autosomally inherited and controlled by a major dominant or a major recessive gene in different silkworm stocks. These resistant stocks can be utilized as the resource material to develop BmDNV1 resistant commercial hybrids. The selection strategies, depending upon the mode of inheritance of resistance in the resource material chosen, are discussed.

• Journal of IKEEE
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• v.24 no.4
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• pp.1093-1097
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• 2020

This work describes the design and characterization of a Ku-band monolithic microwave integrated circuit (MMIC) power amplifier (PA) for satellite communication applications. The device technology used relies on 0.25 ㎛ gate length gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) of wireless information networking (WIN) semiconductor foundry. The developed Ku-band PHEMT MMIC power amplifier has a small-signal gain of 22.2~23.1 dB and saturated output power of 34.8~35.4 dBm over the entire band of 13.75 to 14.5 GHz. Maximum saturated output power is a 35.4 dBm (3.47 W) at 13.75 GHz. Its power added efficiency (PAE) is 30.6~37.83% and the chip dimensions are 4.4 mm×1.9 mm. The developed 3 W PHEMT MMIC power amplifier is expected to be applied in a variety of Ku-band satellite communication applications.

• Journal of Advanced Marine Engineering and Technology
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• v.35 no.4
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• pp.506-511
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• 2011

In this paper, a rectenna for wireless power transmission at 900MHz is proposed. Rectenna is a device transforming RF power into DC power and it may consist of a antenna, rectifying and charging circuits. In this paper, we designed a slot antenna to receive 900MHz signal, a rectifying circuit of about 40% efficiency at 0dBm input, and a charging circuit to store a weak power signal and supply constant voltage to load. From the experiment using a RFID reader as a transmitter for 1W power, it was found that the proposed rectenna receiving about 0dBm power can supply 3.3V constant voltage to 50$k{\Omega}$ load during 280sec.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.3C
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• pp.234-240
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• 2002

A power amplifier with AlGaAs/InGaAs/GaAs HBT's has been developed for customer premise equipments of the quasi millimeter-wave frequency-band broadband wireless local loop(BWLL) system. Parameters of the linear and nonlinear equivalent circuits for a common base HBT have been extracted by a fitting method. The amplifier has been designed through the linear and nonlinear circuit simulations and fabricated on a ceramic substrate for a hybrid IC. The amplifier has produced a 25.5-dBm output power with 35% power-added efficiency(PAE) at 24.4 GHz and achieved a 7.5-dB linear power gain at 24.8 GHz. In 24.25 ∼24.75 GHz band, the amplifier has exhibited a saturated output over larger than 22 dBm and PAE higher than 25%.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.5
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• pp.686-693
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• 2001

In this paper, a new carrier complex power series which represents nonlinear transfer function of high power amplifier is derived. Using this transfer function, the nonlinear transfer function of predistortive circuit for linearizing the distortion effect of a HPA(High Power Amplifier) is derived and fabricated. A measured gain and $P_{1dB}$ of the fabricated HPA in IMT-2000 basestation transmitting band are 34.06 dB and 35.4 dBm. The predistortive circuit using inverse carrier complex power series is fabricated and operated with HPA. The predistortive HPA improves C/I(Carrier to Intermodulation) ratio of HPA by 17.01 dB(@Pout=25.43 dBm/tone) with 2-tone at 2.1375 GHz and 2.1425 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.2
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• pp.148-153
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• 2011

In this paper, an inverse class E frequency multiplier has been designed to generate 5.8 GHz wireless LAN signal by multiplying 2.9 GHz input. The inverse class E frequency multiplier is operating with low inductance value and low peak drain voltage than the class E frequency multiplier. Measurement shows the output power of 21 dBm, the mutiplier gain of 6 dB, and the PAE(Power Added Efficiency) of 35 % with 15 dBm input power.