A Design of High Power Amplifier Predistortor using Carrier Complex Power Series Analysis

Carrier Complex Power Series 해석을 통한 대전력 증폭기용 전치 왜곡기 설계

  • 윤상영 (세원텔레텍(주) 부설연구소) ;
  • 정용채 (전북대학교 공과대학 전자정보공학부 및 정보통신연구소)
  • Published : 2001.08.01

Abstract

In this paper, a new carrier complex power series which represents nonlinear transfer function of high power amplifier is derived. Using this transfer function, the nonlinear transfer function of predistortive circuit for linearizing the distortion effect of a HPA(High Power Amplifier) is derived and fabricated. A measured gain and $P_{1dB}$ of the fabricated HPA in IMT-2000 basestation transmitting band are 34.06 dB and 35.4 dBm. The predistortive circuit using inverse carrier complex power series is fabricated and operated with HPA. The predistortive HPA improves C/I(Carrier to Intermodulation) ratio of HPA by 17.01 dB(@Pout=25.43 dBm/tone) with 2-tone at 2.1375 GHz and 2.1425 GHz.

본 논문에서는 대전력 증폭기의 비선형 전달 특성을 나타내는 Carrier Complex Power Series를 유도하였고, 이 전달함수를 이용하여 대전력 증폭기를 선형화하기 위한 전치 왜곡기의 비선형 전달 특성을 유도하고 구현하였다. 측정 시료로 제작된 IMT-2000 기지국 송신 대역 대전력 증폭기의 이득은 34.6 dB이고 P$_{1dB}$가 35.4 dBm이다. Inverse Carrier Complex Power Series를 이용한 전치 왜곡기를 제작하고, 대전력 증폭기에 부착하여 주파수가 각각 2.1375 GHz와 2.1425 GHz($\Delta$f=5 MHz)인 2-tone 신호의 출력이 25.43 dBm/tone일 때 17 dB의 개선 특성을 얻었다.다.

Keywords

References

  1. Dissertation, Sogang Univ. A design of predistortion linearizer by individual order control of intermodulation distortion signals Yong Chae Jeong
  2. Feedforward Linear Power Amplifiers Nick Pothecary
  3. IEEE Trans on Microwave Theory and Tech. v.44 no.12 Effects of Nonlinear Disortion on CDMA Communication Systems Seng-Woon Chen
  4. IEEE Trans. Microwave Theory and Tech. v.23 no.1 Design of Predistortion Linearizer using diodes W. W. Lee
  5. Solid-State Microwave Amplifier Design Tri T. Ha
  6. IEEE Trans. Microwave Theory and Tech. v.21 no.1 Baseband simulatin of RF power amplifiers using carrier vector transfer characteristics Seung-June Yi
  7. IEEE Trans on Microwave Theory and Tech. v.45 no.12 Transfer Characteristic of IM3 Relative Phase for a GaAs FET Amplifier Noriharu Suematsu