• 제목/요약/키워드: blocking effect

검색결과 904건 처리시간 0.028초

두 개의 산악 위에서의 연속적으로 성층화된 흐름의 흐름 체계 (Flow Regimes of Continuously Stratified Flow over a Double Mountain)

  • 한지영;김재진;백종진
    • 대기
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    • 제17권3호
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    • pp.231-240
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    • 2007
  • The flow regimes of continuously stratified flow over a double mountain and the effects of a double mountain on wave breaking, upstream blocking, and severe downslope windstorms are investigated using a mesoscale numerical model (ARPS). According to the occurrence or non-occurrence of wave breaking and upstream blocking, three different flow regimes are identified over a double mountain. Higher critical Froude numbers are required for wave breaking and upstream blocking initiation for a double mountain than for an isolated mountain. This means that the nonlinearity and blocking effect for a double mountain is larger than that for an isolated mountain. As the separation distance between two mountains decreases, the degree of flow nonlinearity increases, while the blocking effect decreases. A rapid increase of the surface horizontal velocity downwind of each mountain near the critical mountain height for wave breaking initiation indicates that severe downslope windstorms are enhanced by wave breaking. For the flow with wave breaking, the numerically calculated surface drag is much larger than theoretically calculated one because the region with the maximum negative perturbation pressure moves from the top to the downwind slope of each mountain as the internal jump propagating downwind occurs.

시협처리시의 특성에 관한 연구I (A Study on the Characteristics of Fabrics Dyed with Astringent Unripe Persimmon juice)

  • 이혜선
    • 복식
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    • 제28권
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    • pp.205-212
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    • 1996
  • This paper is to study the characteristics of fabrics dyed with astringent unripe persimmon juice. The cotton silk rayon and nylon fabrics were dyed with astringet unripe persimmon juice. The structures of natural fabrics dyed fabrics and dyed fabrics followed by washing were examined by scanning electron mi-croscopy. Surface reflexibility of VIS trans-mittance of UV VIS and NIR were analyzed. The study conclues as follows: 1. Colour of cotton fabrics dyed with persim-mon juice became darkended as a function of exposing time to sunlight. That colour was chaged after washing. 2. Blocking effect of ultraciolet light and visible ray was increased in all dyed fabrics. Especially dyed cotton fabric blocked UV light perfectly and the blocking effect was still remained after 9 washings. 3. Persimmon juice dyeing produced coating effect to fabrics besides dyeing effect accord-ing to the scanning electron micrographs. In a word the cotton fabric dyed with per-simmon juice has blocking effect of UV light stiffness. Therefore I think persimmon juice dyeing is a very useful textile finishing and ex-pect a wide application of the technique in fu-ture.

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고내압 특성을 위한 진성영역과 트렌치 구조를 갖는 베이스 저항 사이리스터 (A Novel Trench Electrode BRT with Intrinsic Region for High Blocking Voltage)

  • 강이구;성만영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.243-246
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    • 2001
  • In this paper, we have proposed a novel trench electrode Base Resistance Thyristor(BRT) and trench electrode BRT with a intrinsic region. A new power BRTs have shown superior electrical characteristics including snab-back effect and forward blocking voltage more than the conventional BRT. Especially, the trench electrode BRT with intrinsic region has obtained high blocking voltage of 1600V. The blocking voltage of conventional BRT is about 400V at the same size. Because the breakdown mechanism of BRT is avalanch breakdown by impact ionization, the trench electrode BRT with intrinsic region has suppressed impact ionization, effectively. If we use this principle, we can develope super high voltage power devices and applicate to another power devices including IGBT, EST and etc.

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EST(Emitter Switched Thyristor) 소자의 트랜치 전극에 의한 특성 변화 연구 (A Study on the Change of Electrical Characteristics in the EST(Emitter Switched Thyristor) with Trench Electrodes)

  • 김대원;성만영;강이구
    • 한국전기전자재료학회논문지
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    • 제17권3호
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    • pp.259-266
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    • 2004
  • In this paper. a new two types of EST(Emitter Switched Thyristor) structures are proposed to improve the electrical characteristics including the current saturation capability. Besides, the two dimensional numerical simulations were carried out using MEDICI to verify the validity of the device and examine the electrical characteristics. First, a vortical trench electrode EST device is proposed to improve snap-back effect and its blocking voltage. Second, a dual trench gate EST device is proposed to obtain high voltage current saturation characteristics and high blocking voltage and to eliminate snap-back effect. The two proposed devices have superior electrical characteristics when compared to conventional devices. In the vertical trench electrode EST, the snap-back effect is considerably improved by using the vertical trench gate and cathode electrode and the blocking voltage is one times better than that of the conventional EST. And in the dual trench gate EST, the snap-back effect is completely removed by using the series turn-on and turn-off MOSFET and the blocking voltage is one times better than that of the conventional EST. Especially current saturation capability is three times better than that of the other EST.

인간 시각 모델을 이용한 블록 부호화에서의 경계 현사의 제거 (Reduction of the Blocking Effect in Block Coded Images Using Human Visual Model)

  • 김근형;박래홍
    • 대한전자공학회논문지
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    • 제25권6호
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    • pp.663-671
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    • 1988
  • In this paper, in order to reduce the blocking effect of block coded images, we propose the method considering the lowpass and bandpass components of Granrath's human visual model. This method consists of two-stage enhancement procedure. The first step is lowpass filtering which smooths out the blocking effect, and the second step is a high frequency enhancement procedure to increase the contrast decreased by the lowpass filtering in the first step. In the first step, the one-dimensional Gaussian filter which aligthns parallel to the edge direction is considered to preserve the edge in the block and the two-dimensional Gaussian filter is used to smooth out the blocking effect near the block boundaries. In the second step, the lowpass and bandpass components of the Granrath's model are considered to increase contrast in a restored image. The performance comparison of the proposed method and the existing mehtods is made by a computer simulation with several block coded images. We can see that the enhancement in the subjective quality of images of the proposed method is more significant than the enhancement in the subjective quality of images of the proposed method is more significant than the existing methods, though the proposed method does not show better performance on the PSNR gain, the poor measure of picture quality for block coded images.

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유리 개방형 균일 B 스플라인 곡선을 이용한 블록 효과 감소 (Reduction of Blocking Effect using a Rational Open Uniform B-Spline Curve)

  • 김희정;김지홍
    • 한국멀티미디어학회논문지
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    • 제5권4호
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    • pp.386-392
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    • 2002
  • 본 논문에서는 유리 B 스플라인 곡선을 이용한 새로운 블록 효과 감소 방법을 제안한다. 블록 효과는 매우 낮은 비트율로 블록 기반 부호화 방식을 수행할 때 복원 영상에서 나타나는 블록 형태의 왜곡을 의미한 다 제안된 기법에서는 컴퓨터 그래픽스 분야에서 제어점을 근사하는 부드러운 곡선을 생성하기 위해 사용되는 유리 B 스플라인 곡선을 이용하여 블록 효과를 감소시킨다 즉 블록 경계 영역의 화소들을 제어점으로 사용하며, 처리될 화소와 블록 경계간의 거리에 따라 가중치를 차등적으로 설정함으로써 블록 효과가 효율적으로 감소되도록 한다. 모의 실험은 제안된 방법이 기존 방법들에 비해 우수한 블록효과 감소 성능을 가지는 것을 나타낸다.

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Feasibility of ferroelectric materials as a blocking layer in charge trap flash (CTF) memory

  • Zhang, Yong-Jie;An, Ho-Myoung;Kim, Hee-Dong;Nam, Ki-Hyun;Seo, Yu-Jeong;Kim, Tae-Geun
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.119-119
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    • 2008
  • The electrical characteristics of Metal-Ferroelectric-Nitride-Oxide-Silicon (MFNOS) structure is studied and compared to the conventional Silicon-Oixde-Nitride-Oxide-Silicon (SONOS) capacitor. The ferroelectric blocking layer is SrBiNbO (SBN with Sr/Bi ratio 1-x/2+x) with the thickness of 200 nm and is fabricated by the RF sputter. The memory windows of MFNOS and SONOS capacitors with sweep voltage from +10 V to -10 V are 6.9 V and 5.9 V, respectively. The effect of ferroelectric blocking layer and charge trapping on the memory window was discussed. The retention of MFNOS capacitor also shows the 10-years and longer retention time than that of the SONOS capacitor. The better retention properties of the MFNOS capacitor may be attributed to the charge holding effect by the polarization of ferroelectric layer.

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Effect of Head of the Line Blocking on Session Initiation Protocol Session Establishment Delays

  • Camarillo, Gonzalo;Schulzrinne, Henning;Loreto, Salvatore;Hautakorpi, Jani
    • Journal of Communications and Networks
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    • 제11권1호
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    • pp.72-83
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    • 2009
  • We have studied the effect of head of the line blocking (HOLB) on session initiation protocol (SIP) session establishment delays. Our results are based on experiments performed in a test bed and on the public Internet. We used the stream control transmission protocol (SCTP) as a transport for SIP because SCTP can be configured to suffer or to avoid HOLB. Our experiments show that the effect of HOLB on session establishment delays generally starts to be significant starting at fairly low packet loss rates. However, there are scenarios where network conditions are good enough to make the effect of HOLB insignificant.

Bias stress effect in organic thin-film transistors with cross-linked PVA gate dielectric and its reduction method using $SiO_2$ blocking layer

  • Park, Dong-Wook;Lee, Cheon-An;Jung, Keum-Dong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.445-448
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    • 2006
  • Bias stress effect in pentacene organic thin-flim transistors with cross-linked PVA gate dielectric is analyzed. For negative gate bias stress, positive threshold voltage shift is observed. The injected charges from the gate electrode to the defect states of gate dielectric are regarded as the main origin of $V_T$ shift. The reduced bias stress effect using $SiO_2$ blocking layer confirms the assumed mechanism. It is also demonstrated that the inverter with $SiO_2$ blocking layer shows the negligible hysteresis owing to the reduced bias stress effect.

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WT평면에서의 디지탈 청각 보조 신호 처리 시스템의 설계 (A Study on the Design of a Digital Hearing Aids Signal Processing System in the Wavelet Transform Domain)

  • 이현철;석광원
    • 대한의용생체공학회:의공학회지
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    • 제17권3호
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    • pp.347-354
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    • 1996
  • This paper presents digital hearing aids signal processing system in WT(wavelet transform) domain. For implementation of hearing aids in WT domain, the gain in frequency domain is approximated in WT domain. We also present the gain selection algorithm to deal with the change of input signal power. Most transform methods produce blocking effect, and this effect degrades the convergence rate of feedback canceller. As a solution, we proposed wavelet transform bascd feedback canceller. To evaluate the performance, we compared it with LOT (lapped orthogonal transform) method in the frequency domain. This system has not shown the blocking effect, and improves convergence rate as compared with the LOT based feedback canceller.

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