• 제목/요약/키워드: binary metal oxide

검색결과 33건 처리시간 0.024초

다양한 형태의 금속 산화물을 이용한 Pd계 복합 수소분리막의 2원계 중간층 형성에 관한 연구 (A Study of the Formation of Binary Intermediate Layer on Pd-based Hydrogen Separation Membrane Using Various Types of Metal Oxides)

  • 황인혁;김성수
    • 공업화학
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    • 제29권2호
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    • pp.196-200
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    • 2018
  • 본 연구에서는 복합 수소분리막 중간층의 pin hole, crack 및 defect를 최소화하기 위하여 powder type과 sol type의 금속산화물을 이용하여 복합화하였다. 중간층의 표면 형상과 투과 특성은 주사전자현미경(SEM) 분석과 $N_2$ 투과도 테스트를 통해 평가하였으며, 제조한 수소분리막의 성능평가를 위해 $N_2$$H_2$를 이용하여 단일가스 투과 테스트를 수행하였다. Powder type과 sol type의 금속산화물을 각각 이용하여 중간층을 적층한 결과 sol type 금속산화물을 이용하여 적층한 중간층의 표면 조도가 매우 낮았으며, 특히 $TiO_2$ sol로 형성된 중간층의 pin-hole, crack 및 defect가 현저히 감소하였다. Powder와 sol을 복합화하여 적층한 중간층은 sol로 형성된 중간층과 거의 유사한 특성을 보였으며, 이를 기반으로 제조한 수소분리막은 1 bar의 압력구배, 672 K의 온도에서 약 $0.32mol/m^2s$의 수소 투과도를 나타내었으며, 선택도는 약 10,890 이상으로 측정되었다.

고체산화물 연료전지를 위한 물성치 모델 및 단전지 해석 (Physical Property Models and Single Cells Analysis for Solid Oxide Fuel Cell)

  • 박준근;김선영;배중면
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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    • pp.379-381
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    • 2009
  • The simulation model for metal-supported Solid Oxide Fuel Cell(SOFC) is developed in this study. Open circuit voltage is calculated using Nernst equation and Gibbs free energy is required by thermodynamic. The exchange current densities are compared with experimental results since exchange current density is most effective factor for the activation loss. Liu's study is used for the exchange current density of cathode, BSCF, and Koide's result is applied for the exchange current density of anode, Ni/YSZ. For the ohmic loss, ionic conductivity of YSZ is described from Kilner's mode and the data are compared with Wanzenberg's experimental data. Diffusivity is an important factor for the mass transfer through the porous medium. Both binary diffusion and Knudsen diffusion are considered as the diffusion mechanism. For validation, simulation results at this work are compared with our experimental results.

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이원계 $SiO_2$$TiO_2$ 박막의 저항 변화 특성 (Resistance Switching Characteristics of Binary $SiO_2\;and\;TiO_2$ Films)

  • 박인성;김경래;안진호
    • 마이크로전자및패키징학회지
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    • 제13권2호
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    • pp.15-19
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    • 2006
  • 이원계 산화막인 비정질 $SiO_2$와 다결정 $TiO_2$의 저항 변화 특성을 연구하였다. Metal-Insulator-Metal의 저항 소자를 형성하여 전압 sweep에 의한 I-V를 측정하여 저항 상태를 확인하였다. 즉, 낮은 저항 상태 (LRS) 와 높은 저항 상태 (HRS) 의 두 가지 저항 상태가 존재하였으며, LRS는 전압에 의한 절연체의 불완전한 breakdown 후에, HRS는 전압에 의한 negative differential resistance 후에 각각 나타났다. LRS의 경우에는 Ohmic 전도 mechanism에 의해서, HRS의 경우에는 Schottky contact에 의한 potential barrier의 생성이 저항 상태를 결정한다고 제안하였다. 즉, potential barrier의 생성과 소멸이 두 저항 상태를 형성한다고 할 수 있다. 유전율이 높은 $TiO_2$$SiO_2$에 비하여, 낮은 동작 특성 전압을 나타내었으며, 1 V에서의 저항비도 높았다.

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나트륨 아지드와 금속산화물과의 혼합물에 대한 열분해 특성 (Thermal Decomposition Characteristics on Sodium Azide and Metallic Oxide Mixtures)

  • 이내우;최재욱;박광수;설수덕;왕석주
    • 한국안전학회지
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    • 제12권3호
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    • pp.106-113
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    • 1997
  • The thermal characteristics of two binary mixtures by sodium azide/manganese dioxide and ferric oxide, two ternary mixtures by sodium azide/silicon dioxide/manganese dioxide and ferric oxide were studied to obtain the basic data of gas-generating agents for air bags. The thermal reaction for all mixtures started at about $420^{\circ}C$, but the temperature at which the reaction rate reached a maximum was different with the states of samples. According to reaction results, nitrogen, nitrogen oxide and nitrogen dioxide were detected by GC-MS and so many kinds of new chemicals from sodium azide and metal oxide mixtures by XRD. NMS is considered as most stable and reasonable mixture for this types of gas-generating agents.

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Electrodeposition of Mn-Ni Oxide/PEDOT and Mn-Ni-Ru Oxide/PEDOT Films on Carbon Paper for Electro-osmotic Pump Electrode

  • Baek, Jaewook;Shin, Woonsup
    • Journal of Electrochemical Science and Technology
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    • 제9권2호
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    • pp.93-98
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    • 2018
  • $MnO_2$, a metal oxide used as an electrode material in electrochemical capacitors (EDLCs), has been applied in binary oxide and conducting polymer hybrid electrodes to increase their stability and capacitance. We developed a method for electrodepositing Mn-Ni oxide/PANI, Mn-Ni oxide/PEDOT, and Mn-Ni-Ru oxide/PEDOT films on carbon paper in a single step using a mixed bath. Mn-Ni oxide/PEDOT and Mn-Ni-Ru oxide/PEDOT electrodes used in an electro-osmotic pump (EOP) have shown better efficiency compared to Mn-Ni oxide and Mn-Ni oxide/PANI electrodes through testing in water as a pumping solution. EOP using a Mn-Ni-Ru oxide/PEDOT electrode was also tested in a 0.5 mM $Li_2SO_4$ solution as a pumping solution to confirm the effect of the $Li^+$ insertion/de-insertion reaction of Ruthenium oxide on the EOP. Experimental results show that the flow rate increases with the increase in current in a 0.5 mM $Li_2SO_4$ solution compared to that obtained when water was used as a pumping solution.

MOM 커패시터를 사용한 디지털-아날로그 변환기를 가진 10-bit 10-MS/s 비동기 축차근사형 아날로그-디지털 변환기 (A 10-bit 10-MS/s Asynchronous SAR analog-to-digital converter with digital-to-analog converter using MOM capacitor)

  • 정연호;장영찬
    • 한국정보통신학회논문지
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    • 제18권1호
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    • pp.129-134
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    • 2014
  • 본 논문은 디지털-아날로그 변환기(DAC: digital-to-analog converter), SAR 로직, 그리고 비교기로 구성된 10-bit 10-MS/s 비동기 축차근사형(SAR: successive approximation register) 아날로그-디지털 변환기(ADC: analog-to-digital converter)를 제안한다. Rail-to-rail의 입력 범위를 가지는 설계된 비동기 축차근사형 아날로그-디지털 변환기는 샘플링 속도를 향상시키기 위해 MOM(metal-oxide-metal) 커패시터를 이용한 바이너리 가중치 기반의 디지털-아날로그 변환기를 사용하여 구현한다. 제안하는 10-bit 10-MS/s 비동기 축차근사형 아날로그-디지털 변환기는 0.18-${\mu}m$ CMOS 공정에서 제작되고 면적은 $0.103mm^2$를 차지한다. 1.1 V의 공급전압에서 전력소모는 0.37 mW를 나타낸다. 101.12 kHz와 5.12 MHz의 아날로그 입력 신호에 대해 측정된 SNDR은 각각 54.19 dB와 51.59 dB이다.

무정형 알루미늄 산화물에 의한 양이온 중금속의 표면착화 (Surface Complexation of Cationic Metal Adsorption Onto Amorphous Aluminum Oxide)

  • 박연종;양재규;최상일
    • 한국지하수토양환경학회지:지하수토양환경
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    • 제13권1호
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    • pp.101-109
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    • 2008
  • 국내 화학회사에서 발생되는 연마분진 폐기물에 대한 흡착제로서의 재이용성을 평가하기 위하여 연마분진을 $550^{\circ}C$에서 하소시켜 얻어진 무정형 알루미늄 산화물(AMA-L)을 이용하여 양이온 중금속인 구리, 카드뮴, 납 등에 대한 흡착특성을 파악하였으며 MINEQL + 프로그램을 적용하여 AMA-L과 양이온 중금속 이온간의 표면흡착결합 반응을 모사하여 흡착실험결과와 비교하였다. 구리와 카드뮴, 납의 단일성분에 대한 AMA-L의 흡착실험결과, 납 > 구리 > 카드뮴의 순서로 친화력의 차이가 발생하는 것을 확인하였다. 구리와 카드뮴의 농도변화에 따른 AMA-L 흡착실험 결과 구리와 카드뮴의 농도를 증가시킴에 따라 두 성분의 흡착효율은 모두 감소되는 것으로 나타났으며 구리와 카드뮴이 동시에 존재하는 이성분계 흡착의 경우에는 단일성분으로 존재하는 경우와 유사한 흡착율을 나타내었으며 경쟁이온의 영향을 거의 받지 않는 것으로 확인이 되었다. 또한, AMA-L에 대한 흡착특성에 대한 MINEQL+를 이용한 모사결과 단일성분과 이성분계 흡착에 대한 흡착특성은 비교적 잘 일치하는 것으로 나타났다.

High-Speed CMOS Binary Image Sensor with Gate/Body-Tied PMOSFET-Type Photodetector

  • Choi, Byoung-Soo;Jo, Sung-Hyun;Bae, Myunghan;Kim, Jeongyeob;Choi, Pyung;Shin, Jang-Kyoo
    • 센서학회지
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    • 제23권5호
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    • pp.332-336
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    • 2014
  • In this paper, we propose a complementary metal oxide semiconductor (CMOS) binary image sensor with a gate/body-tied (GBT) PMOSFET-type photodetector for high-speed operation. The GBT photodetector of an active pixel sensor (APS) consists of a floating gate ($n^+$-polysilicon) tied to the body (n-well) of the PMOSFET. The p-n junction photodiode that is used in a conventional APS has a good dynamic range but low photosensitivity. On the other hand, a high-gain GBT photodetector has a high level of photosensitivity but a narrow dynamic range. In addition, the pixel size of the GBT photodetector APS is less than that of the conventional photodiode APS because of its use of a PMOSFET-type photodetector, enabling increased image resolution. A CMOS binary image sensor can be designed with simple circuits, as a complex analog to digital converter (ADC) is not required for binary processing. Because of this feature, the binary image sensor has low power consumption and high speed, with the ability to switch back and forth between a binary mode and an analog mode. The proposed CMOS binary image sensor was simulated and designed using a standard CMOS $0.18{\mu}m$ process.

Structural Analysis of Simulated Fission-Produced Noble Metal Alloys and Their Superconductivities

  • 박용준;이광용;이종규;허용득;김원호
    • Bulletin of the Korean Chemical Society
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    • 제21권12호
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    • pp.1187-1192
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    • 2000
  • Ternary (Mo-Ru-Pd) and binary (Mo-Ru, Mo-Pd) alloys have been prepared using an Ar arc melting furnace. Mo and the noble metals, Ru and Pd, are the constituents of metallic insoluble residues, which were found in the early days of post-irradiation studies on uranium oxide fuels. In the present study, the structure of the alloys was evaluated using a powder X-ray diffractometer. Unit cell parameters were determined by least squares refinements of powder X-ray diffraction data. Scanning electron microscopic analyses of the surface of the alloys indicated that surface morphology was dependent on the crystallographic structure as well as its composition. Measurements of the magnetic susceptibility of the alloys showed evidence of superconducting transition from 3 to 9.2 K. Among the ternary and binary alloys, the ${\sigma}-phase$ showed the highest superconducting transition temperature,~9.2 K.

Radiation-hardened-by-design preamplifier with binary weighted current source for radiation detector

  • Minuk Seung;Jong-Gyun Choi ;Woo-young Choi;Inyong Kwon
    • Nuclear Engineering and Technology
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    • 제56권1호
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    • pp.189-194
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    • 2024
  • This paper presents a radiation-hardened-by-design preamplifier that utilizes a self-compensation technique with a charge-sensitive amplifier (CSA) and replica for total ionizing dose (TID) effects. The CSA consists of an operational amplifier (OPAMP) with a 6-bit binary weighted current source (BWCS) and feedback network. The replica circuit is utilized to compensate for the TID effects of the CSA. Two comparators can detect the operating point of the replica OPAMP and generate appropriate signals to control the switches of the BWCS. The proposed preamplifier was fabricated using a general-purpose complementary metal-oxide-silicon field effect transistor 0.18 ㎛ process and verified through a test up to 230 kGy (SiO2) at a rate of 10.46 kGy (SiO2)/h. The code of the BWCS control circuit varied with the total radiation dose. During the verification test, the initial value of the digital code was 39, and a final value of 30 was observed. Furthermore, the preamplifier output exhibited a maximum variation error of 2.39%, while the maximum rise-time error was 1.96%. A minimum signal-to-noise ratio of 49.64 dB was measured.