• 센서학회지
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• 제30권5호
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• pp.295-299
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• 2021

In this study, we present a complementary metal-oxide-semiconductor (CMOS) binary image sensor. It can shoot an object rotating at a high-speed by using a gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector. The GBT PMOSFET-type photodetector amplifies the photocurrent generated by light. Therefore, it is more sensitive than a standard N+/P-substrate photodetector. A binary operation is installed in a GBT PMOSFET-type photodetector with high-sensitivity characteristics, and the high-speed operation is verified by the output image. The binary operations circuit comprise a comparator and memory of 1- bit. Thus, the binary CMOS image sensor does not require an additional analog-to-digital converter. The binary CMOS image sensor is manufactured using a standard CMOS process, and its high- speed operation is verified experimentally.

• 센서학회지
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• 제30권2호
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• pp.82-87
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• 2021

In this paper, we propose a high-speed, low-power complementary metal-oxide semiconductor (CMOS) binary image sensor featuring a gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector based on a double-tail comparator. The GBT photodetector forms a structure in which the floating gate (n+ polysilicon) and body of the PMOSFET are tied, and amplifies the photocurrent generated by incident light. The double-tail comparator compares the output signal of a pixel against a reference voltage and returns a binary signal, and it exhibits improved power consumption and processing speed compared with those of a conventional two-stage comparator. The proposed sensor has the advantages of a high signal processing speed and low power consumption. The proposed CMOS binary image sensor was designed and fabricated using a standard 0.18 ㎛ CMOS process.

• 대한치과보철학회지
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• 제27권1호
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• pp.143-179
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• 1989

To observe the bonding behavior of palladium-based alloys to porcelain; 1. Pd-Co binary alloy with the higher cobalt content, 2. Pd-Co binary alloy with the lower cobalt content, 3. Pd-Ag-Sn ternary alloy, 4. Pd-Ag binary alloy, 5. Pd-Cu-Au ternary alloy and 6. Pd-Cu binary alloy were made as 6 groups of experimental alloys. Each group of alloy was divided into 4 sub-groups such as one sub-group that was not degassed and three sub-groups that degassed for 5 minutes, 10 minutes and 15 minutes. On each specimen, weight changes after degassing, morphological changes of oxide layer by changing the degassing time, compositional changes at metal-ceramic interface and bond strength of metal-ceramic measured with planar shear test were observed and compared. The results of the present study allow the following conclusions to be drawn: 1. The alloy showing the greatest bond strength was Pd-Cu alloy without gold and bond strength was decreased by alloying gold to them. 2. Although Pd-Co alloy showed the most prominent oxidation behavior, bond strength of them to porcelain was not greatly high by the formation of porosities at metal-ceramic interfaces. 3. Likewise tin, cobalt formed the peaks on line profiles at metal-ceramic interface, however copper did not exhibit such peaks on line profiles. 4. Mainly, oxide layer on Pd-Co alloy was composed with cobalt, and for Pd-Co alloy with higher cobalt content the rise of bond strength was not significant by increased degassing time. 5. On Pd-Ag alloy not containing tin, during degassing for 15 minutes silver content was increased at metal-ceramic interface. 6. As an oxidized element, tin formed the oxide layers that widen their area by increasing the degassing time, while cobalt and copper showed the morphological changes of particle or crystal on oxide layer.

• 센서학회지
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• 제27권6호
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• pp.362-367
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• 2018

A complementary metal oxide semiconductor (CMOS) binary image sensor is proposed for low-power and low-noise operation. The proposed binary image sensor has the advantages of reduced power consumption and fixed pattern noise (FPN). A gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector is used as the proposed CMOS binary image sensor. The GBT PMOSFET-type photodetector has a floating gate that amplifies the photocurrent generated by incident light. Therefore, the sensitivity of the GBT PMOSFET-type photodetector is higher than that of other photodetectors. The proposed CMOS binary image sensor consists of a pixel array with $394(H){\times}250(V)$ pixels, scanners, bias circuits, and column parallel readout circuits for binary image processing. The proposed CMOS binary image sensor was analyzed by simulation. Using the dynamic comparator, a power consumption reduction of approximately 99.7% was achieved, and this performance was verified by the simulation by comparing the results with those of a two-stage comparator. Also, it was confirmed using simulation that the FPN of the proposed CMOS binary image sensor was successfully reduced by use of the double sampling process.

• 센서학회지
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• 제30권1호
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• pp.61-65
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• 2021

In this study, we propose a 2500 frame per second (fps) high-speed binary complementary metal oxide semiconductor (CMOS) image sensor using a gate/body-tied (GBT) p-channel metal oxide semiconductor field effect transistor-type high-speed photodetector. The GBT photodetector generates a photocurrent that is several hundred times larger than that of a conventional N+/P-substrate photodetector. By implementing an additional binary operation for the GBT photodetector with such high-sensitivity characteristics, a high-speed operation of approximately 2500 fps was confirmed through the output image. The circuit for binary operation was designed with a comparator and 1-bit memory. Therefore, the proposed binary CMOS image sensor does not require an additional analog-to-digital converter (ADC). The proposed 2500 fps high-speed operation binary CMOS image sensor was fabricated and measured using standard CMOS process.

• 한국응용과학기술학회지
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• 제31권2호
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• pp.190-196
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• 2014

The sol-gel method was used to prepare binary metal oxide ($IrO_2-RuO_2$) pH sensor. The electrodes that mole percent compositions (mol%) of $IrO_2$ and RuO2 were 70:30 and 30:70 were selected. The characterizations of Nernstian response over pH range, response rate, interference on alkaline metals and reproducibility were investigated. Also the electroanalytical properties of these electrodes were evaluated in comparison with a commercial glass pH electrode. The composition of $IrO_2:RuO_2$ 70:30 mol% was chosen as better electrode formulation. The electrode was not susceptible to the action of interfering ions such as $Li^+$, $Na^+$ and $K^+$.

• 한국산학기술학회논문지
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• 제13권1호
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• pp.456-461
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• 2012

본 연구에서는 글리세롤과 우레아를 이용하여 글리세롤카보네이트를 합성하는 반응을 진행하였다. ZnO와 Zn-Al 이원계 금속 산화물 촉매를 제조하고, 제조되어진 촉매를 사용하여 글리세롤의 전환율과 글리세롤카보네이트의 수율을 확인하였고, Al의 첨가에 따른 촉매 특성의 분석과 글리세롤카보네이트 합성반응에서의 역할에 대해 확인하였다. 글리세롤카보네이트 합성 반응에서 ZnO를 단독으로 촉매를 사용한 경우보다 Zn-Al 혼합 산화물을 촉매로 사용하여 반응하였을 때, 부반응이 억제되어 전환율 및 수율이 증가함을 확인하였다.

• 센서학회지
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• 제29권2호
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• pp.82-88
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• 2020

In this paper, we propose a complementary metal-oxide semiconductor (CMOS) binary image sensor with a gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector using a double-tail comparator for high-speed and low-power operations. The GBT photodetector is based on a PMOSFET tied with a floating gate (n+ polysilicon) and a body that amplifies the photocurrent generated by incident light. A double-tail comparator compares an input signal with a reference voltage and returns the output signal as either 0 or 1. The signal processing speed and power consumption of a double-tail comparator are superior over those of conventional comparator. Further, the use of a double-sampling circuit reduces the standard deviation of the output voltages. Therefore, the proposed CMOS binary image sensor using a double-tail comparator might have advantages, such as low power consumption and high signal processing speed. The proposed CMOS binary image sensor is designed and simulated using the standard 0.18 ㎛ CMOS process.

• 한국자동차공학회논문집
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• 제10권1호
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• pp.32-44
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• 2002

Selective catalytic reduction of nitric oxide by methane in the presence of excess oxygen was investigated over copper and cobalt ion-exchanged ZSM-5 zeolites. Copper ion-exchanged ZSM-5(Cu-ZSM-5) has the limitations for commercial applications to lean-bum gasoline and diesel engines due to low thermal stability and resistance to water vapor and sulfur dioxide. But cobalt ion-exchanged ESM-5(Co-ZSM-5) is more active at high temperatures and also stable to water vapor and sulfur dioxide for catalytic reduction of nitric oxide by methane. The catalytic activity of Cu-ZSM-5 for NO reduction increases with increasing temperatures, reaches the maximum conversion of 23.0% at 350\"C. and then decreases with higher temperatures. In the meantime catalytic activities of Co-ZSM-5 show the maximum conversion of 25.8% at $500^{\circ}C$ Therefore Co-ZSM-5 catalysts have higher thermal stability at high temperatures. Catalytic activities of both zeolites were remarkably enhanced with the existence of oxygen in the exhaust. It is noted that the catalytic activity of Cu-ZSM-5 decreases with the increasing concentration of methane while the catalytic activity of Co-ZSM-5 decreases with increasing contents of methane in the exhaust. This may imply the existence of different paths of NO reduction by methane in the presence of excess oxygen fur Cu-ZSM-5 and Co-ZSM-5 catalysts. For binary metal ionexchanged ZSM-5, the primary ion-exchanged metal may be masked by secondary ion-exchanged component, which plays the important role for catalytic activities of binary metal ion-exchanged ZSM-5, Therefore CuCo-ZSM-5 catalysts show the similar volcano-shaped curves to Cu-ZSM-5 catalysts between the activity and temperature. It Is interesting that the activities of CoCu-ZSM-5 catalysts indicate almost no dependence on the concentration of methane in the exhaust.aust.

• 한국항행학회논문지
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• 제17권6호
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• pp.700-704
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• 2013

양자 셀룰라 오토마타(QCA)는 CMOS의 기술을 상속받을 차세대 나노 전자 소자 중 하나이다. QCA는 원자규모 및 초저전력화로 이목이 집중되고 있으며 다양한 QCA 회로들이 제안되었다. 십진 출력을 요하는 전자회로와 마이크로프로세서에서 주로 사용되는 이진화 십진법(BCD)은 연산을 위한 변환은 편하지만 데이터 낭비가 심하다. 본 논문에서는 QCA 회로에서 감산 및 반올림에 효과적으로 이용될 수 있는 BCD-3초과 코드를 제안한다. 제안된 구조는 잡음을 최소화하고 공간 및 시간 복잡도를 고려하여 효율적으로 설계되었으며 시뮬레이션을 통해 검증하였다.