• 공업화학
• /
• 제27권6호
• /
• pp.627-632
• /
• 2016

PVDF-PVC 적층필름의 계면접착력을 향상시키기 위한 새로운 방법으로 PVDF 필름 표면에 유전체장벽 코로나 방전을 통한 EMA 단량체 커플링을 시도하였다. EMA 1% 분위기에서 코로나 표면처리한 PVDF 필름을 사용하여 제조한 PVDF-PVC 적층필름의 계면접착력은 코로나 처리하지 않은 PVDF에 비해 현저히 향상되었다. 코로나 방전처리에 의해 PVDF 필름 표면의 접촉각은 현저히 감소하였다. XPS 분석 결과, 코로나 처리에 의해 필름 표면의 탄소와 산소함량은 증가하는 반면 불소 함량은 감소하였다. XPS $C_{1s}$ 피크의 curve fitting 결과, 코로나 방전 처리에 의해 비극성 C-C 결합 탄소와 산소와 결합하는 탄소의 비율은 점차 증가한 반면, 불소와 결합하는 탄소의 비율은 크게 감소하는 경향을 나타내었다.

• 한국결정학회지
• /
• 제6권2호
• /
• pp.111-117
• /
• 1995

화학증착법에 의해 TiO2 박막을 Si-wafer(100)위에 제조하였다. Titanium tetraisopropoxide (TTIP)를 출발물질로 하여 200-500℃의 온도범위에서 증착을 행하였다. 증착된 박막의 두께는 Ellipsometry 및 SEM을 사용하여 측정하였으며, 산소의 함량에 따른 증착층의 성분분석은 ESCA를 사용하였다. TiO2 박막의 증착속도는 산소의 함량에 따라 증가하였고, 반응가스인 산소를 공급하지 않았을 때 증착층내에 불순물로 탄소가 존재하였으며, 증착층의 성분은 내부로 갈수록 TiO2에서 Ti로 변하였다. 산소를 600scm 공급하였을 때 증착층내에 소량의 탄소가 존재하였으며, 증착층의 성분은 내부로 갈수록 TiO2에서 TiO, Ti로 됨을 알 수 있었다. 산소를 1200scm공급하였을 때 증착층내에 탄소가 존재하지 않았으며, 증착층 성분은 표면에는 TiO2를 이루나 증착층 내부로 갈수록 Ti복합화합물을 이루고 있었다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1993년도 하계학술대회 논문집 B
• /
• pp.1197-1199
• /
• 1993

The molecular electronic devices of organic materials are of current interest. Langmuir-Blodgett(LB) method is the most possible candidate for the development of the molecular electronic devices. One of the critical problems for applications of the LB films to the commercial products will be an electrical conductivity within a LB film. We studied the monolayer characteristics and electrical conductivity of the 1:1 mixture LB films of N-docosylquinolium-TCNQ and $TCNQ^0$. There were some differences in the $\pi-A$ isotherm and UV-visible absorption spectrum of N-docosylquinolium-TCNQ and 1:1 mixture. The small critical area of the $\pi-A$ isotherm for 1:1 mixture may result from the bilayer formation. We confirmed the incorporation of the $TCNQ^0$ with the N-docosylquinolium-TCNQ from the UV-visible absorption spectrum. But the electrical conductivity measured was $10^{-7}$ S/cm for the 1:1 mixture film layered at the surface pressure of 35 mN/m. We couldn't gain any electrical conductivity by mixing the $TCNQ^0$ into the N-docosylquinolium-TCNQ layer. We supposed that $TCNQ^0$ mixed in was not packed parallel to the TCNQ anion radical faces.

• 한국자기학회지
• /
• 제12권4호
• /
• pp.132-136
• /
• 2002

유리기관 위에 이온 빔 증착(ion beam deposition ; IBD)법으로 제작한 버퍼층(buffer layer) Si의 두께에 따른 ［NiFe/FeMn/NiFe］3층박막의 결정성과 교환결합세기(exchange bias field ; H$_{ex}$)를 조사하였다. 버퍼층 Si는 NiFe층을 fcc(111)로 매우 우세하게 초기에 결정성장 시켰다. Si/NiFe 위의 증착된 FeMn층은 ${\gamma}$-fcc(111)구조로 성장함에 따라 안정되고 큰 H$_{ex}$를 가졌고, 버퍼 110 Oe로 거의 일정하였으며, 상부 FeMn/NiFe 이중구조의 H$_{ex}$는 300 Oe까지 증가하였다. 버퍼층이 Ta일 경우와 비교해서 Si일 때 H$_{ex}$와 결정성이 향상되었다.이 향상되었다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.444-444
• /
• 2011

Recently, patterned magnetic films and elements attract a wide interest due to their technological potentials in ultrahigh-density magnetic recording and spintronic devices. Among those patterned magnetic structures, magnetic anti-dot patterning induces a strong shape anisotropy in the film, which can control the magnetic properties such as coercivity, permeability, magnetization reversal process, and magneto-resistance. While majority of the previous works have been concentrated on anti-dot arrays with a single magnetic layer, there has been little work on multilayered anti-dot arrays. In this work, we report on study of the magnetic properties of bilayered anti-dot system consisting of upper perforated Co layer of 40 nm and lower continuous Ni layer of 5 nm thick, fabricated by photolithography and wet-etching processes. The magnetic hysteresis (M-H) loops were measured with a superconducting-quantum-interference-device (SQUID) magnetometer (Quantum Design: MPMS). For comparison, investigations on continuous Co thin film and single-layer Co anti-dot arrays were also performed. The magnetic-domain configuration has been measured by using a magnetic force microscope (PSIA: XE-100) equipped with magnetic tips (Nanosensors). An external electromagnet was employed while obtaining the MFM images. The MFM images revealed well-defined periodic domain networks which arise owing to the anisotropies such as magnetic uniaxial anisotropy, configurational anisotropy, etc. The inclusion of holes in a uniform magnetic film and the insertion of a uniform thin Ni layer, drastically affected the coercivity as compared with single Co anti-dot array, without severely affecting the saturation magnetization ($M_s$). The observed changes in the magnetic properties are closely related to the patterning that hinders the domain-wall motion as well as to the magneto-anisotropic bilayer structure.

• 한국전기전자재료학회논문지
• /
• 제30권4호
• /
• pp.199-203
• /
• 2017

$ZrO_2/PSS$ thin film with a high refractive index was fabricated on a glass substrate by a layer-by-layer self-assembly method. The surface morphology and thickness of the fabricated $ZrO_2/PSS$ thin films were measured as a function of the number of $(ZrO_2/PSS)n$. As the number of $(ZrO_2/PSS)n$ increased from n = 5 to n = 20, RMS roughness decreased from 29.01 nm to 8.368 nm. The $ZrO_2$ thin films exhibited high transmittance of 85% or more; and the 15-bilayer thin film exhibited the highest transmittance among the samples. The transmittance of the fabricated $(ZrO_2/PSS)_{15}$ thin film was ca. 90.8% in the visible range. The refractive index of the glass substrate coated by a $(ZrO_2/PSS)_{15}$ thin film with a thickness of 160 nm increased from ca. 1.52 to 1.74 at the 632 nm wavelength.

• 한국자기학회지
• /
• 제2권2호
• /
• pp.119-124
• /
• 1992

조성변조 Co/Pd 초격자 박막 제조시 스퍼터링 Ar기압이 박막의 미세조직에 미치는 방향과 이로 인한 자기 및 자기광학적 특성에 미치는 영향을 조사하였다. 초격자 박막은 dc-magnetron 스퍼터링 방법으로 각 sublayer의 두께가 $2\;\AA-Co/9\;\AA-Pd$일때, 스퍼터링 Ar가스압력을 2에서 30 mTorr 까지 변화시키면서 제조하였다. Ar기압이 10 mTorr 이상에서 초 격자 박막은 주상구조(columnar structure)를 형성시키면서 성장됨이 관측되었다. Ar기압의 증가에 따라 포화자화값, 자기이방성에너지 및 Kerr 회전각등은 감소하고 보자력은 증가함을 보였다. 이러한 자기 및 자기광학적 특성의 변화는 Ar압력에 따른 초격자 박막의 미세구조 변화에 기인되는 현상으로 설명될 수 있다.

• 공업화학
• /
• 제29권6호
• /
• pp.734-739
• /
• 2018

PVA를 PEDOT : PSS에 첨가해줌으로써 CVD 그래핀 상에 효과적으로 코팅할 수 있었다. PVA의 검화도 및 분자량에 따른 코팅성 및 필름의 전기적 특성을 검토한 결과, DS는 89%, 분자량은 $100,000gmol^{-1}$ 이하인 것이 바람직하였다. 또한, PVA의 첨가량은 PEDOT : PSS의 고형분 대비 5%가 최적으로 나타났다. 이와 같은 PVA를 사용하여 PEDOT : PSS를 CVD 그래핀 위에 코팅한 필름은 CVD 그래핀 필름에 비해서 표면조도, 부착성, 굴곡 내구성 및 고온($160^{\circ}C$)에서의 저항 안정성 등이 현저하게 개선되는 것으로 나타났다.

• 전자공학회논문지D
• /
• 제34D권1호
• /
• pp.23-29
• /
• 1997

Effects of Co thickness on the formation of epitaxial $CoSi_2$ from the Co/Ti bilayer have been investigated. Ti and Co were sequentially deposited with the Ti thickness fixed at 5 or 10nm, while the Co thickness was varied from 5 to 30nm. The metal-deposited samples were then rapidly thermal-annealed in $N_2$ at $900^{\circ}C$ for 20 sec. Material properties of $CoSi_2$ thin films were analyzed by the 4-point probe, XRD, AES, andXTEM. When the as-deposited Co thickness was below 15nm, the $CoSi_2$ with high resistivity and rough interface was formed. On the other hand, when the Co thickness was above 15 nm, the epitaxial $CoSi_2$ with the resistivity of about 16 ~ 19 $\mu\Omega.cm$, uniform composition and thickness and flat interface was formed. Initial Ti thickness has sizable effect on the formation of $CoSi_2$, when the Co layer was very thin (~ 5 nm). But there was no significant effect of the Ti thickness for the initial Co thickness of above 15 nm.

• Transactions on Electrical and Electronic Materials
• /
• 제16권4호
• /
• pp.169-172
• /
• 2015

Although, there are several research studies on the engineering of the graphene layers using different etching techniques, there is not any comprehensive study on the effects of using different etching masks in the reactive ion etching (RIE) method on the quality and uniformity of the etched graphene films. This study investigated the effects of using polystyrene and conventional photolithography resist as a etching mask on the engineering of the number of graphene layers, using RIE. The effects were studied using Raman spectroscopy. This analysis indicated that the photo-resist mask is better than the polystyrene mask because of its lower post processing effects on the graphene surface during the RIE process. A single layer graphene was achieved from a bi-layer graphene after 3 s of the RIE process using oxygen plasma, and the bi-layer graphene was successfully etched after 6 s of the RIE process. The bilayer etching time was significantly smaller than reported values for graphene flakes in previous research.