• Title/Summary/Keyword: biasing

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Cross Type Domain in Exchange-Coupled NiO/NiFe Bilayers

  • Hwang, D.G;Kim, J.K;Lee, S.S;Gomez, R.D
    • Journal of Magnetics
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    • v.7 no.1
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    • pp.9-13
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    • 2002
  • The dependences of microscopic magnetic domain on film thickness in unidirectional and isotropic exchange-coupled NiO/NiFe bilayers were investigated by magnetic force microscopy to better understand for exchange biasing. As NiO thickness increases, microscopic domain structure of unidirectional biased film changed to smaller and more complicated domains. However, for isotropic-coupled film a new cross type domain appeared with out-of plane magnetization orientation. The density of the cross domain is proportional to exchange biasing fields and the fact that the domain was originated by the strongest exchange coupling region was confirmed from the dynamic domain configuration during a magnetization cycle.

1.9-GHz CMOS Power Amplifier using Adaptive Biasing Technique at AC Ground

  • Kang, Inseong;Yoo, Jinho;Park, Changkun
    • Journal of information and communication convergence engineering
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    • v.17 no.4
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    • pp.285-289
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    • 2019
  • A 1.9-GHz linear CMOS power amplifier is presented. An adaptive bias circuit (ABC) that utilizes an AC ground to detect the power level of the input signal is proposed to enhance the linearity and efficiency of the power amplifier. The ABC utilizes the second harmonic component as the input to mitigate the distortion of the fundamental signal. The input power level of the ABC was detected at the AC ground located at the VDD node of the power amplifier. The output of the ABC was fed into the inputs of the power stage. The input signal distortion was mitigated by detecting the input power level at the AC ground. The power amplifier was designed using a 180 nm RFCMOS process to evaluate the feasibility of the application of the proposed ABC in the power amplifier. The measured output power and power-added efficiency were improved by 1.7 dB and 2.9%, respectively.

Optic Link Performances on EOM′s Biasing in Fiber-radio System (주파수 천이를 이용한 광무선 시스템에서 EOM의 바이어스 방식에 따른 광링크 성능 분석)

  • O, Se-Hyeok;Yang, Hun-Gi;Choe, Yeong-Wan
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.38 no.2
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    • pp.128-136
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    • 2001
  • This paper evaluates the performance of an optic link in a frequency conversion based fiber-radio system. The proposed link structure simplifies a BS(base station) via making the MMW(millimeter wave) optical pilot tone generated in the CS(control station) be used in the uplink as well as in the downlink. To acquire the optical pilot tone, an EOM(electro-optic modulator) in the CS is biased in three different ways, i.e., MAB(maximum bias), MIB(minimum bias), QB(quadrature bias). We, depending on the biasing of the EOM, evaluate the link performances in two cases; one is for constant laser source power and the other for constant received DC optical power at a PD(photo detector). Based on the simulation results on the downlink CNR and the uplink SFDR(spurious free dynamic range), we finally deduce the effective EOM biasing for each case.

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A Fully-integrated High Performance Broadb and Amplifier MMIC for K/Ka Band Applications (K/Ka밴드 응용을 위한 완전집적화 고성능 광대역 증폭기 MMIC)

  • Yun Young
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.8 no.7
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    • pp.1429-1435
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    • 2004
  • In this work, high performance broadband amplifier MMIC including all the matching and biasing components, and electrostatic discharge (ESD) protection circuit was developed for K/Ka band applications. Therefore, external biasing or matching components were not required for the operation of the MMIC. STO (SrTiO3) capacitors were employed to integrate the DC biasing components on the MMIC, and miniaturized LC parallel ESD protection circuit was integrated on MMIC, which increased ESD breakdown voltage from 10 to 300 V. A pre-matching technique and RC parallel circuit were used for the broadband design of the amplifier MMIC. The amplifier MMIC exhibited good RF performances and good stability in a wide frequency range. The chip size of the MMICs was $1.7{\pm}0.8$ mm2.

The RF Power Amplifier Using Active Biasing Circuit for Suppression Drain Current under Variation Temperature (RF전력 증폭기의 온도 변화에 따른 Drain 전류변동 억제를 위한 능동 바이어스 회로의 구현 및 특성 측정)

  • Cho, Hee-Jea;Jeon, Joong-Sung;Sim, Jun-Hwan;Kang, In-Ho;Ye, Byeong-Duck;Hong, Tchang-Hee
    • Journal of Navigation and Port Research
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    • v.27 no.1
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    • pp.81-86
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    • 2003
  • In the paper, the power amplifier using active biasing for LDMOS MRF-21060 is designed and fabricated. Driving amplifier using AH1 and parallel power amplifier AH11 is made to drive the LDMOS MRF 21060 power amplifier. The variation of current consumption in the fabricated 5 Watt power amplifier has an excellent characteristics of less than 0.1A, whereas passive biasing circuit dissipate more than 0.5A. The implemented power amplifier has the gain over 12 dB, the gain flatness of less than $\pm$0.09dB and input and output return loss of less than -19dB over the frequency range 2.11~2.17GHz. The DC operation point of this power amplifier at temperature variation from $0^{\circ}C$ to $60^{\circ}C$ is fixed by active circuit.