• Journal of Navigation and Port Research
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• v.27 no.2
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• pp.209-215
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• 2003

In this paper. We tested and fabricated the error amplifier for the 15 Watt linear power amplifier for the IMT-2000 baseband station. The error amplifier was comprised of subtractor for detecting intermodulation distortion, variable attenuator for control amplitude, variable phase shifter for control phase, low power amplifier and high power amplifier. This component was designed on the RO4350 substrate and integrated the aluminum case with active biasing circuit. For suppression of spurious, the through capacitance was used. The characteristics of error amplifier measured up to 45 dB gain, $\pm$0.66 dB gain flatness and -15 dB input return loss. Results of application to the 15 Watt feedforward Linear Power Amplifier, the error amplifier improved with 27 dB cancellation from 34 dBc to 61 dBc IM$_3$.

• Journal of the Korean Magnetics Society
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• v.11 no.3
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• pp.104-108
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• 2001

The effect of specular electron scattering on natural oxidation of free layer in NiO spin valves have been investigated. The magnetoresistance (MR) ratio and the exchange biasing field ( $H_{ex}$) of NiO(600 $\AA$)Ni$_{81}$$Fe_{19}$(50$\AA$)/Co(7 $\AA$)/Cu(20 $\AA$)/Co(7 $\AA$)Ni$_{81}$$Fe_{19}$(70 $\AA$) spin valves were increased from 4.9 % to 7.3 %, and 110 Oe to 170 Oe after natural oxidation in the atmosphere for 80 days, respectively. The sheet resistivity p decreased from 28$\mu$$\Omega$m to 17$\mu$$\Omega$m, but $\Delta$$\rho$ did not almost change after the oxidation. The spin valves enhanced by the specular electron scattering in the natural]y Co/NiFe/NiFe $O_{x}$ free layer were confirmed from the depth profiles using Auger electron spectroscopy.scopy..

• Journal of the Korean Magnetics Society
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• v.14 no.6
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• pp.228-231
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• 2004

We have studied local magnetization reversal and magnetic properties induced by Laser annealing method in the strip-patterned Ta/NiFe/FeMn/Ta and Ta/NiFe/FeMn/NiFe/Ta multilayers fabricated by ion-beam deposition. The films were exposed to the emission of the DPSS (Diode Pumped Solid State, Nd:YAG) laser under 600 G. The laser beam intensity increased up to 440 mW. When the laser illuminated the patterned film with the power of above 200 m W, the intensity of MR peak located in +87 Oe shrunk. A new MR peak was generated at -63 Oe. When the laser power is 400 mW, the location of positive MR peak(H$\sub$ex/) was changed slightly from +87 Oe to +76 Oe, and the MR ratio was decreased from 0.9% to 0.1 %. On the other hand, the new (negative) MR peak shifted from -63 Oe to -80 Oe, with the MR ratio increased up to 0.3%. As the illuminated area expanded, the intensity of opposite MR peak increased and it of negative MR peak decreased. This proved that the local reversal of exchange biasing should be realized by laser annealing.

• Journal of the Korean Magnetics Society
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• v.9 no.2
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• pp.111-120
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• 1999

The effects of annealing in rotating magnetic field after deposition on electromagnetic properties of $Co_{82}Zr_6Mo_{12}$ thin (200~1200 $\AA$) films prepared by RF-magnetron sputtering were investigated in terms of microstructure and surface morphology. The coercivity decreases, but $4{\pi}M_5$ does not change with increasing the film thickness. The coercivity of the films was decreased below 300 $^{\circ}C$ due to stress relief and decreasing the surface roughness, while increased at 400 $^{\circ}C$ due to partial grain growth. And then, $4{\rho}M_5$ was almost independent of annealing temperatures below 200 $^{\circ}C$, but increased from 7.4 kG to 8.0 kG at 300 $^{\circ}C$ and at 400 $^{\circ}C$, which was caused by precipitation and growth of fine Co particles in the films. The electrical resistivity of films was decreased with increasing annealing temperatures and the magnetoresistance was a negative value of nearly 0 $\mu$$\Omega$cm. After annealing at 300 $^{\circ}C$, maximum effective permeability was 1200 to the hard axis of the thin films according to high frequency change. Considering the practical application of biasing layers of the films for magnetoresistive heads, optimal annealing conditions was obtained after one hour annealing at 300 $^{\circ}C$ in 400 Oe rotating magnetic field.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.10 no.6
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• pp.558-569
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• 2017

In this paper, a 256Kb EEPROM IP aimed at battery applications using a single supply of 1.5V which is embedded into an MCU is designed. In the conventional cross-coupled VPP (boosted voltage) charge pump using a body-potential biasing circuit, cross-coupled PMOS devices of 5V in it can be broken by the junction or gate oxide breakdown due to a high voltage of 8.53V applied to them in exiting the program or erase mode. Since each pumping node is precharged to the input voltage of the pumping stage at the same time that the output node is precharged to VDD in the cross-coupled charge pump, a high voltage of above 5.5V is prevented from being applied to them and thus the breakdown does not occur. Also, all erase, even program, odd program, and all program modes are supported to reduce the times of erasing and programming 256 kilo bits of cells. Furthermore, disturbance test time is also reduced since disturbance is applied to all the 256 kilo bits of EEPROM cells at once in the cell disturb test modes to reduce the cell disturbance testing time. Lastly, a CG driver with a short disable time to meet the cycle time of 40ns in the erase-verify-read mode is newly proposed.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.3
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• pp.517-526
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• 2008

A one-chip DC-DC converter circuit for OLED(Organic Light-Emitting Diode) display module of automotive clusters is newly proposed. OLED panel driving voltage circuit, which is a charge-pump type, has improved characteristics in miniaturization, low cost and EMI(Electro-Magnetic Interference) compared with DC-DC converter of PWM(Pulse Width Modulator) type. By using bulk-potential biasing circuit, charge loss due to parasitic PNP BJT formed in charge pumping, is prevented. In addition, the current dissipation in start-up circuit of band-gap reference voltage generator is reduced by 42% and the layout area of ring oscillator is reduced by using a logic voltage VLP in ring oscillator circuit using VDD supply voltage. The driving current of VDD, OLED driving voltage, is over 40mA, which is required in OLED panels. The test chip is being manufactured using $0.25{\mu}m$ high-voltage process and the layout area is $477{\mu}m{\times}653{\mu}m$.

• The Journal of the Korea Contents Association
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• v.21 no.1
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• pp.541-551
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• 2021

Among the numerous duties of a librarian in a library, the work of arranging books is a job that the librarian has to do one by one. Thus, the cost of labor and time is large. In order to solve this problem, the interest in book-arranging robots based on artificial intelligence has recently increased. In this paper, we propose the K-ACO algorithm, which is the shortest path algorithm for multi-stops that can be applied to the library book arrangement robots. The proposed K-ACO algorithm assumes multiple robots rather than one robot. In addition, the K-ACO improves the ANT algorithm to create K clusters and provides the shortest path for each cluster. In this paper, the performance analysis of the proposed algorithm was carried out from the perspective of book arrangement time. The proposed algorithm, the K-ACO algorithm, was applied to a university library and compared with the current book arrangement algorithm. Through the simulation, we found that the proposed algorithm can allocate fairly, without biasing the work of arranging books, and ultimately significantly reduce the time to complete the entire work. Through the results of this study, we expect to improve quality services in the library by reducing the labor and time costs required for arranging books.

• Journal of the Korean Magnetics Society
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• v.13 no.5
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• pp.187-192
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• 2003

The magnetic and thermal properties of NiFe/[IrMn-Mn]/CoFe with Mn additions have been studied. As-deposited CoFe pinned layers with [IrMn-Mn]layer had dominantly larger exchange biasing field ( $H_{ex}$) and blocking temperature ( $T_{b}$) than those with pure I $r_{22}$M $n_{78}$ used. The $H_{ex}$ and $T_{b}$ improved with 76.8-78.1 vol% Mn, but those of the NiFe/IrMn/CoFe dropped considerably with more addition of 0.6 vol % Mn. The average x-ray diffraction peak ratios of fcc [(111)CoFe, NiFe]/(111)IrM $n_3$ textures for the Mn inserted total vol of 75.5, 77.5, and 79.3% were about 1.4, 0.8, and 0.6, respectively. For the sample without Mn inserted layer, the $H_{ex}$ between IrMn and CoFe layers was almost zero, but it increased to 100 Oe after annealing of 250 $^{\circ}C$. For as-grown two multilayers samples with ultra-thin Mn layers of 77.5 and 78.7 vol %, the $H_{ex}$s were 259 and 150 Oe, respectively. In case of IrMn with 77.5 vol% Mn, the $H_{ex}$ was increased up to 475 Oe at 350 $^{\circ}C$ but decreased to 200 Oe at 450 $^{\circ}C$, respectively. The magnetic properties and thermal stabilities of NiFe/[IrMn-Mn]/CoFe multilayer were enhanced with Mn additions. In applications where higher $H_{ex}$ and $T_{b}$ are required, proper contents of Mn can be used. be used. used.

• Journal of the Korean Magnetics Society
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• v.7 no.5
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• pp.265-273
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• 1997

The MR ratios and the exchange biasing field and interlayer coupling field were investigated in $Ni_{91}Fe_{19}/Co_{90}Fe_{10}/Cu/Co_{90}Fe_{10}/NiO$ spin-valve sandwiches grown on antiferromagnetic NiO films as a function of the NiO thickness, the thickness of Cu and pinning layer $Co_{90}Fe_{10}$. The spin-valve sandwiches were deposited on the Corning glass 7059 by means of the 3-gun dc and 1-gun rf magnetron sputtering at a 5 mtorrpartial Ar pressure and room temperature. The deposition field was 50 Oe. The MR curve was measured by the four-terminal method with applied magnetic soft bilayer [NiFe/CoFe] (90$\AA$) decreased dramatically to less than 10 Oe when the NiFe/CoFe bilayer used an NiFe bilayer thicker that 20$\AA$. So NiFe layer improved the softmagnetic properties in the NiFe/CoFe bilayer. The GMR ratio and the magnetic field sensitivity of the spin-valve film $Ni_{91}Fe_{19}(40{\AA})/Co_{90}Fe_{10}(50{\AA}) /Cu(30{\AA})/Co_{90}Fe_{10}(35{\AA})/NiO(800{\AA})$ was 6.3% and about 0.5 (%/Oe), respectively. The MR ratio had 5.3% below an annealing temperature of 20$0^{\circ}C$ which slowly decreased to 3% above 30$0^{\circ}C$. The large blocking temperature of the spin-valve film was taken (as being) due to the good stability of the NiO films. Thus, the spin-valve films with a free NiFe/CoFe layer clearly had a high large GMR output and showed a effective magnetic field sensitivity for a suitable spin-valve head material.