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http://dx.doi.org/10.17661/jkiiect.2017.10.6.558

Design of 256Kb EEPROM IP Aimed at Battery Applications  

Kim, Young-Hee (Department of Electronic Engineering, Changwon National University)
Jin, RiJun (Department of Electronic Engineering, Changwon National University)
Ha, Pan-Bong (Department of Electronic Engineering, Changwon National University)
Publication Information
The Journal of Korea Institute of Information, Electronics, and Communication Technology / v.10, no.6, 2017 , pp. 558-569 More about this Journal
Abstract
In this paper, a 256Kb EEPROM IP aimed at battery applications using a single supply of 1.5V which is embedded into an MCU is designed. In the conventional cross-coupled VPP (boosted voltage) charge pump using a body-potential biasing circuit, cross-coupled PMOS devices of 5V in it can be broken by the junction or gate oxide breakdown due to a high voltage of 8.53V applied to them in exiting the program or erase mode. Since each pumping node is precharged to the input voltage of the pumping stage at the same time that the output node is precharged to VDD in the cross-coupled charge pump, a high voltage of above 5.5V is prevented from being applied to them and thus the breakdown does not occur. Also, all erase, even program, odd program, and all program modes are supported to reduce the times of erasing and programming 256 kilo bits of cells. Furthermore, disturbance test time is also reduced since disturbance is applied to all the 256 kilo bits of EEPROM cells at once in the cell disturb test modes to reduce the cell disturbance testing time. Lastly, a CG driver with a short disable time to meet the cycle time of 40ns in the erase-verify-read mode is newly proposed.
Keywords
Battery Applications; Cross-Coupled Charge Pump; Cell Disturb; Disturbance; EEPROM; Single Supply; Test Time;
Citations & Related Records
Times Cited By KSCI : 4  (Citation Analysis)
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