• 한국진공학회지
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• 제2권4호
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• pp.501-506
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• 1993

The spatial potential distribution of electron cyclotron resonance plasma is measured as a function of tehsubstrate DC bias by Langmuir probe method. It is observed that the substrate DC bias changes the slope of the plasma potential near the subsrate, resulting in changes in flux and energy of the impinging ions across plasma $_strate boundary along themagnetric field. The effect of the substrate DC bias on the low-temperature silicon homoepitaxy (below $560^{\circ}C$) is examine dby in situ reflection high energy electron diffraction (RHEED), cross-section transmission electron microscopy (XTEM),plan-view TEM and high resolution transmision electron microscopy(HRTEM). While the polycrystalline silicon layers are grow withnegative substrate biases, the single crystaline silicon layers are grown with negative substrate biases, the singel crystalline silicon layers are grown with positive substrate biases. As the substrate bias changes form negative to positive values, the growth rate decreases. It is concluded that the control of the ion energy during plasma deposition is very important in silicon epitaxy at low temperatures below $560^{\circ}C$ by UHV-ECRCVD.VD.

• 한국음향학회지
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• 제20권7호
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• pp.94-100
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• 2001

적응 정합장처리에서 어레이의 센서 수보다 부족한 신호단편 수로 표본 공분산행렬을 구성할 경우 행렬 계수의 부족으로 행렬의 역변환에 문제가 발생된다. 이를 해결하기 위해 표본 공분산행렬의 대각성분에 일정한 값을 더하거나 고유분해와 같은 기법을 사용하나, 그 결과로 프로세서 출력에서는 바이어스가 발생된다. 본 논문은 고정음원에서 신호단편의 수에 따른 적응 프로세서 출력의 바이어스와 음원 위치 추정 결과를 고찰하기 위해 표본 공분산행렬의 대각성분에 일정한 값을 첨가하는 방법으로 최소분산 기법을 사용하여 수치실험과 실측 자료를 분석하였다. 그 결과 센서 수보다 많은 신호단편을 사용하는 것이 바이어스가 적으며, 음원 위치 추정에서도 좋은 성능을 보였다.

• 대한기계학회논문집A
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• 제25권3호
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• pp.424-433
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• 2001

We present a new electrostatic repulsive-force microactuator using a lateral repulsive force induced by an asymmetric distribution of electrostatic field. The lateral repulsive force has been characterized by a simple analytical equation, derived from a finite element simulation. A set of repulsive force polysilicon microactuators has been designed and fabricated by a 4-mask surface-micromachining process. Static and dynamic micromechanical behavior of the fabricated microactuators has been measured at the atmospheric pressure for a varying bias voltage. The static displacement of the fabricated microactuator, proportional to the square of the DC bias voltage, is obtained as 1.27 $\mu\textrm{m}$ for the DC bias voltage of 140V. The resonant frequency of the repulsive-force microactuator increases from 11.7 kHz to 12.7 kHz when the DC bias voltage increases from 60V to 140V. The measured quality-factor varies from 12 to 13 for the bias volatge range of 60V∼140V. The characteristics of the electrostatic repulsive-force have been discussed and compared and compared with those of the conventional electrostatic attractive-force.

• Journal of Magnetics
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• 제13권3호
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• pp.97-101
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• 2008

We investigated the exchange bias fields at the NiFe/FeMn and FeMn/CoFe interfaces in 18.9-nm NiFe/15.0-nm FeMn/17.6-nm CoFe trilayer thin films as the annealing temperature was varied from room temperature to $250^{\circ}C$ in a vacuum for 1 hour in a magnetic field of 150 Oe. Interestingly, magnetic hysteresis (M-H) measurements showed that NiFe/FeMn/CoFe trilayer thin films exhibited a completely contrasting variation of the exchange bias fields at both the NiFe/FeMn and FeMn/CoFe interfaces with annealing temperatures. High-angle X-ray diffraction (XRD) measurements indicated the absence of any discernible effect of thermal treatment on the NiFe(111) and FeMn(111) peaks. The compositional depth profile obtained from X-ray photoelectron spectroscopy (XPS) results presented the asymmetric compositional depth profiles of the Mn and Fe atoms throughout the FeMn layer. We contend that this asymmetric compositional depth profile and the preferential Mn diffusion into the NiFe layer, compared to that into the CoFe layer, are conclusive experimental evidence of the contrasting variation of the exchange bias fields at two interfaces having a common polycrystalline FeMn(111) layer.

• 한국유기농업학회지
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• 제32권1호
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• pp.25-37
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• 2024

This study is to apply behavioral economics-an economics that studies actual human behavior based on cognitive psychology-to the farming decision-making process of onion and garlic farmers. Of behavioral economic theories, dual system theory and prospect theory (value function), heuristic and bias were surveyed and examined in the field. The reference point of farmers was farming experience of the previous year, and so they showed reference dependence and anchoring heuristic, not rational thinking on production cost plan. And they showed status quo bias that cultivated continuously the previous year or the present crop. This status quo bias is related to loss aversion propensity. Farmers did not usually change cultivating crops, in other words, they showed diminishing sensitivity-insensitive to those that the more revenue or loss was increased. This diminishing sensitivity is related to loss aversion propensity and status quo bias. Also, farmers had representativeness heuristic because they regarded auction price of Garakdong wholesale market as the standard price level despite various prices by production region. And farmers had the affect heuristic that they depended on producers' organization data more than the state-run research institute ones about cultivation intentions and actual situations.

• 조명전기설비학회논문지
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• 제28권9호
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• pp.45-51
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• 2014

This work carried out for the effective synthesis characteristics of graphene nanowall film by controlling the electric field in a RF plasma CVD process. For that, the bipolar bias voltage was applied to the substrate such as Si and glass materials for the best chemical reaction of positive and negative charges existing in the plasma. For supplying the seed formation sites on substrate and removing the oxidation layer on the substrate surface, the electron bombardment into substrates was performed by a positive few voltage in hydrogen plasma. After that, hydrocarbon film, which is not a graphene nanowall, was deposited on substrates under a negative bias voltage with hydrogen and methane gases. At this step, the film on substrates could not easily identify due to its transparent characteristics. However, the transparent film was easily changed into graphene nanowall by the final hydrogen plasma treatment process. The resultant raman spectra shows the existence of significant large 2D peaks corresponding to the graphene.

• Journal of Astronomy and Space Sciences
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• 제34권1호
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• pp.19-30
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• 2017

The optical wide-field patrol network (OWL-Net) is a Korean optical surveillance system that tracks and monitors domestic satellites. In this study, a batch least squares algorithm was developed for optical measurements and verified by Monte Carlo simulation and covariance analysis. Potential error sources of OWL-Net, such as noise, bias, and clock errors, were analyzed. There is a linear relation between the estimation accuracy and the noise level, and the accuracy significantly depends on the declination bias. In addition, the time-tagging error significantly degrades the observation accuracy, while the time-synchronization offset corresponds to the orbital motion. The Cartesian state vector and measurement bias were determined using the OWL-Net tracking data of the KOMPSAT-1 and Cryosat-2 satellites. The comparison with known orbital information based on two-line elements (TLE) and the consolidated prediction format (CPF) shows that the orbit determination accuracy is similar to that of TLE. Furthermore, the precision and accuracy of OWL-Net observation data were determined to be tens of arcsec and sub-degree level, respectively.

• Journal of Korean Vacuum Science & Technology
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• 제3권1호
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• pp.79-84
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• 1999

the photolithographic patterning on an indium-tin oxide (ITO) glass and the electro-phoretic deposition were combined for preparing the screen of the full-color field emission display(FED). the patterns with a pixel of 400$\mu\textrm{m}$ on the ITO-glass were made by etching the ITO with well-prepared etchant consisting of HCL, H2O, and HNO3. Electrophoretic method was carried out in order to deposit each spherical red (R), green(G), and blue (B) phosphor on the patterned ITO-glass. The process parameters such as bias voltage, salt concentration, and deposition time were optimized to achieve clear boundaries. It was found that the etching process of ITO combined with electrophoretic method was cost-effective, provided distinct pattern, and even reduced process steps compared with conventional processes. The application of reverse bias to the dormant electrodes while depositing the phosphors on the stripe pattern was found to be very critical for preventing the cross-contamination of each phosphor in a pixel.

• 한국산학기술학회논문지
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• 제11권5호
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• pp.1592-1596
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• 2010

IGZO (indium gallium zinc oxide) 박막트랜지스터는, 활성층 채널의 폭과 길이의 비가 고정된 경우에도, 채널 길이가 길어지면 게이트전압에 대한 드레인 전류의 특성곡선이 양의 전압 방향으로 이동하고 전계효과이동도는 낮아졌다. 채널의 길이와 폭이 고정된 상태에서는, 드레인이 전압 높은 경우에 전계효과이동도가 낮고 문턱아래 기울기가 큰 특성을 보였다. 이러한 현상은 IGZO 채널층의 일함수가 커서 소스/드레인 전극과 채널층의 접합부 띠굽음이 규소반도체의 경우와 반대방향으로 나타나는 것에 기인하는 것으로 해석된다.

• 한국전기전자재료학회논문지
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• 제15권4호
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• pp.367-372
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• 2002

The vertically well-aligned carbon nanotubes(CNTs) were successfully grown on Ni coated silicon wafer substrate by DC bias-assisted PECVD(Plasma Enhanced Chemical Vapor Deposition). As a catalyst, Ni thin film of thickness ranging from 15~30nm was prepared by electron beam evaporator method. In order to find the optimum growth condition, the type of gas mixture such as $C_2H_2-NH_3$ was systematically investigated by adjusting the gas mixing ratio at $570^{\circ}C$ under 0.4Torr. The diameter of the grown CNTs was 40~200nm and the diameter of the CNTs increased with increasing the Ni particles size. TEM images clearly showed carbon nanotubes to be multiwalled. The measured turn-on field was $3.9V/\mu\textrm{m}$ and an emission current of $1.4{\times}10^4A/\textrm{cm}^2$ was $7V/\mu\textrm{m}$. The CNTs grown by bias-assisted PECVD was able to demonstrate high quality in terms of vertical alignment, crystallization of graphite and the processing technique at low temperature of $570^{\circ}C$ and this can be applied for the emitter tip of FEDs.