한국진공학회지 (Journal of the Korean Vacuum Society)
- 제2권4호
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- Pages.501-506
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- 1993
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- 1225-8822(pISSN)
초고진공 전자 사이클로트론 화학 기상 증착 장치에 의한 저온 실리콘 에피 성장에 기판 DC 바이어스가 미치는 영향
The Effect of Substrate DC Bias on the Low -Temperature Si homoepitaxy in a Ultrahigh Vacuum Electron Cyclotron Resonance Chemical Vapor Deposition
초록
The spatial potential distribution of electron cyclotron resonance plasma is measured as a function of tehsubstrate DC bias by Langmuir probe method. It is observed that the substrate DC bias changes the slope of the plasma potential near the subsrate, resulting in changes in flux and energy of the impinging ions across plasma
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