• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.239-244
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• 2017

We experimentally investigate the physical mechanism for asymmetrical degradation in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) under simultaneous gate and drain bias stresses. The transfer curves exhibit an asymmetrical negative shift after the application of gate-to-source ($V_{GS}$) and drain-to-source ($V_{DS}$) bias stresses of ($V_{GS}=24V$, $V_{DS}=15.9V$) and ($V_{GS}=22V$, $V_{DS}=20V$), but the asymmetrical degradation is more significant after the bias stress ($V_{GS}$, $V_{DS}$) of (22 V, 20 V) nevertheless the vertical electric field at the source is higher under the bias stress ($V_{GS}$, $V_{DS}$) of (24 V, 15.9 V) than (22 V, 20 V). By using the modified external load resistance method, we extract the source contact resistance ($R_S$) and the voltage drop at $R_S$ ($V_{S,\;drop}$) in the fabricated a-IGZO TFT under both bias stresses. A significantly higher RS and $V_{S,\;drop}$ are extracted under the bias stress ($V_{GS}$, $V_{DS}$) of (22 V, 20V) than (24 V, 15.9 V), which implies that the high horizontal electric field across the source contact due to the large voltage drop at the reverse biased Schottky junction is the dominant physical mechanism causing the asymmetrical degradation of a-IGZO TFTs under simultaneous gate and drain bias stresses.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.108-109
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• 2014

본 논문에서는 gate와 drain bias stress하에서의 a-IGZO thin-film transistors (TFTs)의 비대칭 열화 메커니즘 분석을 진행하였다. Gate와 drain bias stress하에서의 a-IGZO TFT의 열화 현상은 conduction band edge 근처에 존재하는 oxygen vacancy-related donor-like trap의 발생으로 예상되며, TFT의 channel layer 내에서의 비대칭 열화현상은 source의 metal과 a-IGZO layer간의 contact에 전압이 인가되었을 경우, reverse-biased Schottky diode에 의한 source 쪽에서의 높은 electric field가 trap generation을 가속화시킴으로써 일어나는 것임을 확인할 수 있었다.

• Journal of Magnetics
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• 제17권4호
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• pp.245-250
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• 2012

Ferromagnetic resonance and X-ray specular reflectivity measurements were performed on $Ni_{81}Fe_{19}/Ir_{20}Mn_{80}/Co_{90}Fe_{10}$ exchange bias trilayers, which were grown using the pulsed-DC magnetron sputtering technique on Si(100)/$SiO_2$(1000 nm) substrates, to investigate the evolution of the interface roughness and exchange bias and their dependence on the NiFe layer thickness. The interface roughness values of the samples decrease with increasing NiFe thickness. The in-plane ferromagnetic resonance measurements indicate that the exchange bias field and the peak-to-peak line widths of the resonance curves are inversely proportional to the NiFe thickness. Furthermore, both the exchange bias field and the interface roughness show almost the same dependence on the NiFe layer thickness. The out-of plane angular dependent measurements indicate that the exchange bias arises predominantly from a variation of exchange anisotropy due to changes in interfacial structure. The correlation between the exchange bias and the interface roughness is discussed.

• 한국자기학회지
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• 제15권5호
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• pp.265-269
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• 2005

강자성 공명 측정을 통하여 다양한 층 구성을 갖는 교환 바이어스 박막들의 교환 결합 특성에 대해 연구하였다. 공명자기장의 각도의존 실험을 통하여 일축방향이방성 자기장과 일축이방성 자기장을 구하여 분석하였다. NiFe 단일 박막과 비교하여 교환 바이어스된 NiFe/IrMn, IrMn/NiFe/IrMn, NiFe/IrMn/CoFe 박막들은 큰 일축방향이방성 자기장을 나타내었으며, 일축이방성 자기장 또한 큰 값을 나타내었다. 그러나 NiFe/Cu/IrMn의 경우, Cu의 두께가 두꺼울 때는 매우 작은 일축방향이방성 자기장을 나타내었으며, NiFe 단일 박막과 비슷한 크기의 일축이방성 자기장을 나타내었다. NiFe/IrMn/CoFe 박막의 경우 NiFe와 CoFe 강자성층들에 의해 두 개의 공명 자기장이 나타났다. 그 외에 공명 자기장의 선폭에 관한 분석이 교환 바이어스 특성과 연관하여 논의되어졌다.

• 한국수자원학회논문집
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• 제52권9호
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• pp.589-601
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• 2019

최근 수문기상학 분야에서 레이더 강수량을 활용한 응용연구가 활발하게 진행되고 있다. 하지만 레이더 강수량은 경험적인 레이더 반사도-강수강도 관계식을 활용하여 레이더 강수량을 추정하기 때문에 실제 지상에 도달하는 강수량과 정량적인 오차가 필연적으로 발생한다. 따라서 본 연구에서는 레이더 강수량 편의보정을 위하여 Bayesian 추론기법과 일반화 선형모형을 연계하여 불확실성을 고려한 편의보정 매개변수를 산정하였다. 일반화 선형모형을 적용한 레이더 강수량 편의보정 결과는 현재 널리 사용되고 있는 평균보정 기법보다 우수한 통계적 효율기준을 제시하였다. 추가로 지형학적 특성에 따른 편의보정 매개변수의 변동성을 분석하여 고도 및 이격거리에 따른 편의보정 매개변수의 지역화 공식을 제시하였다. 본 연구를 통하여 개발된 레이더 강수량 편의보정 매개변수 산정 및 지역화 결과는 레이더와 관련된 다양한 연구에 활용성이 클 것으로 판단된다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.36-37
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• 2006

Both negative and positive substrate bias effects on the structural properties and field-emission characteristics are investigated. carbon nanotubes (CNTs) are grown on Ni catalysts employing an inductively-coupled plasma chemical vapor deposition (ICP-CVD) method. Characterization using various techniques, such as field-emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), Auger spectroscopy (AES), and Raman spectroscopy, shows that the physical dimension as well as the crystal quality of CNTs grown can be changed and controlled by the application of substrate bias during CNT growth. It is for the first time observed that the prevailing growth mechanism of CNTs, which is either due to tip-driven growth or based-on-catalyst growth, may be influenced by substrate biasing. It is also seen that negative biasing would be more effectively role in the vertical-alignment of CNTs compared to positive biasing. However, the CNTs grown under the positively bias condition display much better electron emission capabilities than those grown under negative bias or without bias. The reasons for all the measured data regarding the structural properties of CNTs are discussed to confirm the correlation with the observed field-emissive properties.

• Journal of Magnetics
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• 제11권2호
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• pp.77-82
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• 2006

The structure and magnetic properties of Fe-Ni films, deposited by DC magnetron sputtering on Si(111) wafer, have been studied. The spin wave stiffness constant is determined by Brillouin light scattering (BLS) and compared with the value obtained from magnetization measurements. The range of exchange interaction was determined as 0.4 atomic distances in the film deposited in a bias magnetic field, which is 1/2 that in the film grown in no bias magnetic field. The results show that the dimensions of exchange coupling increased by the sputtering in the magnetic field.

• 전기학회논문지
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• 제56권1호
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• pp.132-138
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• 2007

Carbon nanotubes (CNTs) arc grown on Ni catalysts employing an inductively-coupled plasma chemical vapor deposition (ICP-CVD) method. The structural and field-emissive properties of the CNTs grown are characterized in terms of the substrate-bias applied. Characterization using the various techniques, such as field-omission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), Auger spectroscopy (AES), and Raman spectroscopy, shows that the structural properties of the CNTs, including their physical dimensions and crystal qualities, as well as the nature of vertical growth, are strongly dependent upon the application of substrate bias during CNT growth. It is for the first time observed that the provailing growth mechanism of CNTs, which is either due to tip-driven growth or based-on-catalyst growth, may be influenced by substrate biasing. It is also seen that negatively substrate-biasing would promote the vertical-alignment of the CNTs grown, compared to positively substrate-biasing. However, the CNTs grown under the positively-biased condition display a higher electron-emission capability than those grown under the negatively-biased condition or without any bias applied.

• 한국세라믹학회지
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• 제29권1호
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• pp.65-73
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• 1992

The effect of grain size on the time-dependent piezoelectrice degradation of a poled PZT of MPB composition Pb0.988Sr0.012 (Zr0.52Ti0.48)O3 with 2.4 mol% of Nb2O5 was studied, and the degradation mechanism was discussed. Changes in the internal bias field and the internal stress both responsible for the time-dependent degradation of poled PZT were examined by the polarization reveral technique, XRD and Vickers indentation, respectively. The piezoelectric degradation increased with increasing time and grain size, and the internal bias field due to space charge diffusion decreased with increasing grain size of poled PZT. The internal bias field, however, was almost insensitive to the degradation time regardless of the grain size. On the other hand, both the x-ray diffraction peak intensity ratio of (002) to (200) and the fracture behavior including the crack propagation support that the ferroelectric domain rearrangement of larger grain size showed rapid relaxation of the internal stress compared with smaller one, which is thought the origin of the larger piezoelectric degradation in the former. In conclusion, the contribution of space charge diffusion on the piezoelectric degradation of PZT is strongly dependent on both the grain size and the composition. Thus, the relaxation of internal stress due to the ferroelectric domain rearrangement as well as the amount and time-dependence of the internal bias field due to space charge diffusion should be considered simultaneously in the degradation mechanism of PZT.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.611-614
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• 2003

We have investigated electric field effect on the formation of phase separated composite organic film structure which is utilized by anisotropic phase separation from LC and prepolymer mixtures. Application of bias field resulted in a significant change in liquid crystal alignment between glass substrate and polymer layer. The liquid crystal molecules segregated into the inter-electrodes and formed twisted structure which is the result of imprinting of LC alignment by the bias field on polymer layers during polymerization process.