• Proceedings of the KSMRM Conference
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• 2002.11a
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• pp.98-98
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• 2002

목적： RF Coil sensitivity 또는 MRI system의 여러 요인들로 인해서 생길 수 있는 영상의 Bias field 즉, 유난히 밝거나 어두운 부분을 raw data 의 low frequency 값들을 임의로 변화를 줌으로써 어느 정도 보정이 가능하다. 대상 및 방법： Bias field로 인해서 분석에 어려움이 있는 이미지의 k-space 데이터를 가지고 있으면 부위에 상관없이 모두 가능하다. k-space에서 얻어진 raw data를 Kx와 Ky의 2-D로 표현한 후에 DC 성분에 해당하는 영점을 그대로 놔둔 상태에서 영점 주변으로 일정 범위 안에 있는 low frequency 성분 값들을 FT(Fourier Transform)를 거치기 전에 0으로 바꾼 후에 image processing을 거치도록 한다.

• Proceedings of the Korean Magnestics Society Conference
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• 2006.11a
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• pp.37-37
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• 2006

• Proceedings of the Korean Magnestics Society Conference
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• 2015.05a
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• pp.130-130
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• 2015

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.612-615
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• 2009

We need to control the growth orientation of CNTs on a substrate for applications to various electric devices. Generally, the flow direction of feed gases and electric field between two electrode affect to growth orientations of CNTs. In this paper, we varied tilt degrees $(0^{\circ},\;20^{\circ},\;35^{\circ},\;50^{\circ},\;65^{\circ},\;90^{\circ})$ of substrates on a cathode and DC bias voltages (0, 500, 700 V) applied between two electrodes in order to change growth orientations of CNTs. We confirmed that tilt degrees of the substrate and variation of DC bias voltages affected to the shape and orientation of the grown CNTs on the substrate.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.113-117
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• 2016

Temperature dependent reverse-bias current-voltage (I-V) characteristics in Cu Schottky contacts to oxygen plasma treated n-InP were investigated. For untreated sample, current transport mechanisms at low and high temperatures were explained by thermionic emission (TE) and TE combined with barrier lowering, respectively. For plasma treated sample, experimental I-V data were explained by TE or TE combined with barrier lowering models at low and high temperatures. However, the current transport was explained by a thermionic field emission (TFE) model at intermediate temperatures. From X-ray photoemission spectroscopy (XPS) measurements, phosphorus vacancies (VP) were suggested to be generated after oxygen plasma treatment. V_P possibly involves defects contributing to the current transport at intermediate temperatures. Therefore, minimizing the generation of these defects after oxygen plasma treatment is required to reduce the reverse-bias leakage current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.309-312
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• 2002

Ferroelectric $Sr_{0.3}Ba_{0.7}Nb_{2}O_{6}$ (SBN30) thin films were deposited on Pt/Ti/$SiO_{2}$/Si(100) substrates by ion beam sputtering. During annealing treatment at $750^{\circ}C$, poling was attempted by applying dc voltage bias across polished surfaces. Phase relation, microstructure and crystallization behavior were examined using XRD and FE-SEM. Ferroelectric hysteresis characteristics were also determined where both remanent polarization and coercive values decreased with the increase of bias voltage. The measured remanent polarization and coercive field values at 5 V and 10 V bias were $36{\mu}C/cm^2$, $10{\mu}C/cm^2$ and 100kV /cm, 80kV /cm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.354-355
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• 2008

The sensitivity and sensing margin of SOI(silicon on insulator) nano-wire BioFET(field effect transistor) were investigated by using back-gate bias. The channel conductance modulation was affected by doping concentration, channel length and channel width. In order to obtain high sensitivity and large sensing margin, low doping concentration, long channel and narrow width are required. We confirmed that the electrical sensing by back-gate bias is effective method for evaluation and optimization of bio-sensor.

• Journal of Magnetics
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• v.10 no.1
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• pp.36-39
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• 2005

We report element-resolved and interface-sensitive magnetization reversals investigated from an oppositely exchange-biased NiFe/FeMn/Co structure by employing soft x-ray resonant Kerr rotation measurements. We have found not only switchable uncompensated antiferromagnetic regions with its sizable thicknesses at both interfaces of the FeMn layer but also their strong coupling to the individual ferromagnetic layers. These experimental results provide a better insight into experimentally observed reductions in exchange-bias field on the basis of an interface-proximity model proposed in this work.

• Electrical & Electronic Materials
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• v.8 no.5
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• pp.626-632
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• 1995

In this paper, The effect of the impedances in SNOSFET's memory devices has been developed. The effect of source and drain impedances measured by means of two bias resistances - field effect bias resistance by inner region, external bias resistance. The effect of the impedances by source and drain resistance shows the dependence of the function of voltages applied to the gate. It shows the differences of change in source drain voltage by means of low conductance state and high conductance state. It shows the delay of threshold voltages. The delay time of low conductance state and high conductance state by the impedances effect shows 3[.mu.sec] and 1[.mu.sec] respectively.

• Journal of Multimedia Information System
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• v.5 no.4
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• pp.245-256
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• 2018

This study estimated rainfall information more effectively by image signals through the information system of weather radar. Based on this, we suggest the way to estimate quantitative precipitation utilizing overlapped observation area of radars. We used the overlapped observation range of ground hyetometer observation network and radar observation network which are dense in our country. We chose the southern coast where precipitation entered from seaside is quite frequent and used Sungsan radar installed in Jeju island and Gudoksan radar installed in the southern coast area. We used the rainy season data generated in 2010 as the precipitation data. As a result, we found a reflectivity bias between two radar located in different area and developed the new quantitative precipitation estimation method using the bias. Estimated radar rainfall from this method showed the apt radar rainfall estimate than the other results from conventional method at overall rainfall field.