• Title/Summary/Keyword: bias effect

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The Effect of Bias in Data Set for Conceptual Clustering Algorithms

  • Lee, Gye Sung
    • International journal of advanced smart convergence
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    • v.8 no.3
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    • pp.46-53
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    • 2019
  • When a partitioned structure is derived from a data set using a clustering algorithm, it is not unusual to have a different set of outcomes when it runs with a different order of data. This problem is known as the order bias problem. Many algorithms in machine learning fields try to achieve optimized result from available training and test data. Optimization is determined by an evaluation function which has also a tendency toward a certain goal. It is inevitable to have a tendency in the evaluation function both for efficiency and for consistency in the result. But its preference for a specific goal in the evaluation function may sometimes lead to unfavorable consequences in the final result of the clustering. To overcome this bias problems, the first clustering process proceeds to construct an initial partition. The initial partition is expected to imply the possible range in the number of final clusters. We apply the data centric sorting to the data objects in the clusters of the partition to rearrange them in a new order. The same clustering procedure is reapplied to the newly arranged data set to build a new partition. We have developed an algorithm that reduces bias effect resulting from how data is fed into the algorithm. Experiment results have been presented to show that the algorithm helps minimize the order bias effects. We have also shown that the current evaluation measure used for the clustering algorithm is biased toward favoring a smaller number of clusters and a larger size of clusters as a result.

A Study on Air Traffic Controllers' Cultural bias and Their Response on Abnormal Situations (항공교통관제사의 문화적 편향(Cultural Bias)에 따른 위기 대응 연구)

  • Kim, Geun-Su;Cho, Sung-Hwan
    • Journal of the Korean Society for Aviation and Aeronautics
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    • v.26 no.4
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    • pp.64-75
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    • 2018
  • A status of air traffic controller is a government officer and air traffic controllers who work at airport are divided by duty rating and work experience. Abiding by law, rules and regulation, air traffic controllers are working together based on mutual trust. This paper's theoretical background is based on cultural bias theory. The theory divide people group into four groups according to cultural bias such as fatalism, hierarchy, individualism and egalitarianism. A research model was designed how such four cultural bias could affect air traffic controller's risk response in case of emergency or abnormal situation during their work. Depend on empirical research, it was found that air traffic controllers perceived they had been more biased to fatalism than hierarchy. The characteristics of fatalism group are as follows: first of all, they follow rigid rules and regulation. However, they have less self-efficacy compared to other government officers. According to structural equation model, air traffic controller's fatalism had a significant negative effect on organizational royalty. Their royalty, however, had a very significant positive effect on planning response and immediate response.

A Study on the Dual Mediating Effects of Individual Optimistic Bias and Information Security Intent in the Relationship between Information Security Attitude and Information Security Behavior of Social Welfare College Students (사회복지 전공대학생의 정보보안 태도와 정보보안 행위와의 관계에서 개인의 낙관적 편견과 정보보안 의도의 이중 매개효과)

  • Yun, Il-Hyun
    • Journal of Industrial Convergence
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    • v.19 no.6
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    • pp.145-153
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    • 2021
  • This study empirically verified whether there is a dual mediating effect of individual optimistic bias and information security intention in the relationship between information security attitude and information security behavior of social welfare college students. The subjects were 295 college students majoring in social welfare. Spss Process macro was used for analysis. As a result. first there was a significant positive correlation between the variables. Second in the relationship between information security attitude and information security behavior, individual optimistic bias and information security intent each had a simple mediating effect. Third when an individual's optimistic bias and information security intent were simultaneously input, each had a simple mediating effect. Fourth there was a double mediating effect between individual optimistic bias and information security intent. This study provided basic data for the expansion of information security model and information security education of social welfare students.

Effect of Interface Roughness on Exchange Bias of an Uncompensated Interface: Monte Carlo Simulation

  • Li, Ying;Moon, Jung-Hwan;Lee, Kyung-Jin
    • Journal of Magnetics
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    • v.16 no.4
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    • pp.323-327
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    • 2011
  • By means of Monte Carlo simulation, we investigate the effects of interface roughness and temperature on the exchange bias and coercivity in ferromagnetic (FM)/antiferromagnetic (AFM) bilayers. Both exchange bias and coercivity are strongly dependent on interface roughness. For a perfect uncompensated interface a domain wall is formed in the AFM system during FM reversal, which results in a very small exchange bias. However, a finite interface roughness leads to a finite value of the exchange bias due to the existence of pinned spins at the AFM surface adjacent to the mixed interface. It is observed that the exchange bias decreases with increasing temperature, consistent with the experimental results. It is also observed that a bump in coercivity occurs around the blocking temperature.

Effect of Alternate Bias Stress on p-channel poly-Si TFT`s (P-채널 다결정 실리콘 박막 트랜지스터의 Alternate Bias 스트레스 효과)

  • 김영호;조봉희;강동헌;길상근;임석범;임동준
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.11
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    • pp.869-873
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    • 2001
  • The effects of alternate bias stress on p-channel poly-Si TFT\`s has been systematically investigated. We alternately applied positive and negative bias stress on p-channel poly-Si TFT\`s, device Performance(V$\_$th/, g$\_$m/, leakage current, S-slope) are alternately appeared to be increasing and decreasing. It has been shown that device performance degrade under the negative bias stress while improve under the positive bias stress. This effects have been related to the hot carrier injection into the gate oxide rather than the generation of defect states within the poly-Si/SiO$_2$ interface under alternate bias stress.

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Effect of DC Bias on the Growth of Nanocrystalline Diamond Films by Microwave Plasma CVD (마이크로웨이브 플라즈마 CVD에 의한 나노결정질 다이아몬드 박막 성장 시 DC 바이어스 효과)

  • Kim, In-Sup;Kang, Chan Hyoung
    • Journal of the Korean institute of surface engineering
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    • v.46 no.1
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    • pp.29-35
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    • 2013
  • The effect of DC bias on the growth of nanocrystalline diamond films on silicon substrate by microwave plasma chemical vapor deposition has been studied varying the substrate temperature (400, 500, 600, and $700^{\circ}C$), deposition time (0.5, 1, and 2h), and bias voltage (-50, -100, -150, and -200 V) at the microwave power of 1.2 kW, working pressure of 110 torr, and gas ratio of Ar/1%$CH_4$. In the case of low negative bias voltages (-50 and -100 V), the diamond particles were observed to grow to thin film slower than the case without bias. Applying the moderate DC bias is believed to induce the bombardment of energetic carbon and argon ions on the substrate to result in etching the surfaces of growing diamond particles or film. In the case of higher negative voltages (-150 and -200 V), the growth rate of diamond film increased with the increasing DC bias. Applying the higher DC bias increased the number of nucleation sites, and, subsequently, enhanced the film growth rate. Under the -150 V bias, the height (h) of diamond films exhibited an $h=k{\sqrt{t}}$ relationship with deposition time (t), where the growth rate constant (k) showed an Arrhenius relationship with the activation energy of 7.19 kcal/mol. The rate determining step is believed to be the surface diffusion of activated carbon species, but the more subtle theoretical treatment is required for the more precise interpretation.

The Delay time of CMOS inverter gate cell for design on digital system (디지털 시스템설계를 위한 CMOS 인버터게이트 셀의 지연시간)

  • 여지환
    • Proceedings of the Korea Society for Industrial Systems Conference
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    • 2002.06a
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    • pp.195-199
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    • 2002
  • This paper describes the effect of substrate back bias of CMOS Inverter. When the substrate back bias applied in body, the MOS transistor threshold voltage increased and drain saturation current decreased. The back gate reverse bias or substrate bias has been widely utilized and the following advantage has suppressing subthreshold leakage, lowering parasitic junction capacitance, preventing latch up or parasitic bipolar transistor, etc. When the reverse voltage applied substrate, this paper stimulated the propagation delay time CMOS inverter.

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Back-Gate Bias Effect of Ultra Thin Film SOI MOSFET's (초 박막 SOI MOSFET's 의 Back-Gate Bias 효과)

  • 이제혁;변문기;임동규;정주용;이진민
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.485-488
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    • 1999
  • In this paper, the effects of back-gate bias on n-channel SOI MOSFETs has been systematically investigated. Back-gate surface is accumulated when negative bias is applied. It is found that the driving current ability of SOI MOSFETs is reduced because the threshold voltage and subthreshold slope are increased and transconductance is decreased due to the hole accumulation in Si body.

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The Effects of Luck in Belief and Positive Cognitive Bias on Entrepreneurial Self-Efficacy (행운신념이 긍정적 인지편향과 창업효능감에 미치는 영향)

  • Ha, Hwan Ho;Byun, Chung Gyu
    • Asia-Pacific Journal of Business Venturing and Entrepreneurship
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    • v.18 no.5
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    • pp.33-44
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    • 2023
  • Entrepreneurial self-efficacy is an important variable that explains people's attitudes and behaviors toward start-ups. In this study, we focused on individual psychological characteristics variables such as luck in belief and positive cognitive bias that affect entrepreneurial self-efficacy. Among these variables, we paid particular attention to luck in belief. The belief that business success depends on luck is widespread, but scientific verification about it has not been much. The reason for the academic indifference is that luck is a kind of superstition, related to precognition or extrasensory perception, and randomly caused by the external environment. The study of luck began in earnest as a measure to measure luck as an individual characteristic variable such as personality was developed. The purpose of this study is to examine the existing studies on luck in belief and to examine the effect of this luck in belief on positive cognitive bias and entrepreneurial self-efficacy through empirical analysis. For empirical analysis, this study conducted an on-line survey of 400 ordinary people and conducted a structural equation model analysis using AMOS 21.0 to verify the hypothesis. As a result of hypothesis testing, all hypotheses that luck in belief would have a positive effect on positive cognitive bias(self-enhancement bias, illusion of control bias, unrealism optimistic bias) were adopted. The hypothesis that positive cognitive bias(self-enhancement bias, illusion of control bias, unrealistic optimism bias) will have a positive effect on entrepreneurial self-efficacy was also adopted. Additional analysis was conducted to examine the mediating role of positive cognitive bias in the relationship between luck in belief and entrepreneurial self-efficacy, which showed that 'luck in belief→positive cognitive bias →entrepreneurial self-efficacy' were statistically significant. Through this, we confirmed the mediating effect of positive cognitive bias in the relationship between luck in belief and entrepreneurial self-efficacy. In the conclusion, the implications and limitations of the study were presented based on the results of this study.

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A Study on the Low Temperature Epitaxial Growth of $CoSi_2$ Layer by Multitarget Bias cosputter Deposition and Phase Sequence (Multitarget Bias Cosputter증착에 의한 $CoSi_2$층의 저온정합성장 및 상전이에 관한 연구)

  • Park, Sang-Uk;Choe, Jeong-Dong;Gwak, Jun-Seop;Ji, Eung-Jun;Baek, Hong-Gu
    • Korean Journal of Materials Research
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    • v.4 no.1
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    • pp.9-23
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    • 1994
  • Epitaxial $CoSi_2$ layer has been grown on NaCl(100) substrate at low deposition temperature($200^{\circ}C$) by multitarget bias cosputter deposition(MBCD). The phase sequence and crystallinity of deposited silicide as a function of deposition temperature and substrate bias voltage were studied by X-ray diffraction(XRD) and transmission electron microscopy(TEM) analysis. Crystalline Si was grown at $200^{\circ}C$ by metal induced crystallization(M1C) and self bias effect. In addition to, the MIC was analyzed both theoretically and experimentally. The observed phase sequence was $Co_2Si \to CoSi \to Cosi_2$ and was in good agreement with that predicted by effective heat of formation rule. The phase sequence, the CoSi(l11) preferred orientation, and the crystallinity had stronger dependence on the substrate bias voltage than the deposition temperature due to the collisional cascade mixing, the in-situ cleaning, and the increase in the number of nucleation sites by ion bombardment of growing surface. Grain growth induced by ion bombardment was observed with increasing substrate bias voltage at $200^{\circ}C$ and was interpreted with ion bombardment dissociation model. The parameters of $E_{Ar}\;and \alpha(V_s)$ were chosen to properly quantify the ion bombardment effect on the variation in crystallinty at $200^{\circ}C$ with increasing substrate bias voltage using Langmuir probe.

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