• Journal of Advanced Marine Engineering and Technology
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• v.28 no.1
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• pp.109-115
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• 2004

The spatter and porosity could be occurred during$CO_2$CW laser welding of Primer- coated steel for shipbuilding. This study has suggested an alternative idea by examining of weld-defect formation mechanism. The primer-coated plate induced the spatter humping bead and porosity and these are main part of the welding defect. attributed to the powerful vaporizing pressure of primer attached on the base metal The zinc of Primer has a boiling point that is the lower temperature than melting point of steel zinc vapor will build up at the interface between the two sheets and this tends to deteriorate the quality of the weld by ejecting weld material from lap position or leaving porosity. Therefore introducing a small gap clearance in the lap position. the zinc vapor could escape through it and sound weld beads can be acquired. In conclusion, we suggested the occurred and prevented mechanism of weld defects with searching the factor.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2001.05a
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• pp.1130-1135
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• 2001

This paper investigated the dynamic performance of HDD disk-spindle system to reduce disk fluttering. Rocking frequencies of the disk-spindle system and radial NRRO are measured to escape the ball defect frequencies and to determine the relative optimal position of the disk in the motor. It was found that disk fluttering was reduced by increasing disk thickness, inserting viscoelastic material between the disk and the spacer and decreasing the gap between the disk and the base.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.414-423
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• 2016

In the present study, the $CuN_x-Cu-CuN_x$ layer the partial pressure ratio Cu metal of Ar and $N_2$ gas using a DC magnetron sputtering device, was generated by the In-situ method. $CuN_x$ layer was able to obtain a surface reflectance reduction effect from the advantages of the process and the external light. $CuN_x$ layer is gas partial pressure, DC the Power, the deposition time variable transmittance in response to the thickness and partial pressure ratio, the reflectance was measured. $Ar:N_2$ gas ratio 10:10(sccm), DC power 0.35 A, was derived Deposition time 90 sec optimum conditions. Thus, according to the optimal thickness and the composition ratio was derived surface reflectance of 20.75%. In addition, to derive the value of ${\Delta}$ Ra surface roughness of 0.467. It was derived $CuN_x$ band-gap energy of about 2.2 eV. Thus, to ensure a thickness and process conditions can be absorbed to maximize the light in a wavelength band in the visible light region. As a result, the implementation of the $12k{\Omega}$ base line resistance of using the Cu metal. This is, 5 inch Metal mesh TSP(L/S: $4/270{\mu}m$) is in the range of the reference operation.

• Korean Journal of Materials Research
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• v.12 no.4
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• pp.308-316
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• 2002

The cavitation erosion behavior of wear-resistant hardfacing alloys such as Co-base Stellite 6, Fe-base Norem 02 and new Fe-base alloy were investigated up to 50 hours by using a 20kHz vibratory cavitation erosion test equipment. The crack, initiated easily at the interfaces between matrix and hard second phase, was repressed effectively in Stellite 6 because the matrix was hardened by phase transformation. For this reason, Stellite 6 showed an excellent cavitation erosion resistance compared to Norem 02. The phase transformation also occurred in Norem 02, but the increase of volume fraction of the interfaces caused the crack to be initiated frequently, thus resulting in a 1arge material loss. The matrix of NewAlloy was hardened effectively by vlongrightarrow$\alpha$' phase transformation and the volume fraction of the interfaces was very small compared to Norem 02. This caused the propagation of crack to the matrix to be repressed effectively. Therefore, NewAlloy showed a very excellent cavitation erosion resistance. It wasn't considered that the cavitation erosion resistance of NewAlloy was influenced the temperature of the bath filled with a distilled water up to $80^{\circ}C$.

• Journal of Soil and Groundwater Environment
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• v.22 no.2
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• pp.10-16
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• 2017

Recently, the gap between demand and supply of natural aggregate has increased owing to the depletion of aggregate sources. Therefore, policy support is necessary for the stable supply of aggregate resources. Public and construction works experience problems when they do not receive a steady supply of aggregate. Further, instabilities in aggregate supply lead to increases in aggregate prices, and consequently construction costs. As a result, the likelihood of poor construction using low-grade aggregate increases. It is therefore crucial to put measures in place that deal with these issues. This study aims to reduce the load imposed by aggregate use on the environment by recycling soil dredged from sewage ducts to reduce the gap between supply and demand of fine aggregate. The dredged soil is assessed using an applicability test for quality characteristics and solidification with basic properties. This study aims to secure the safety of dredging soil and solidified objects through interior physical and chemical analyses and to utilize it as a base material for concrete solidification in the future.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.94-100
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• 2002

During the last years, great progress has been made in the fields of welding power sources and filler materials for the MIG-welding of magnesium alloys. This advice resulted in a better welding process, md, therefore, in highly improved welding results. Furthermore the gap between short-circuiting- and spray-arc-trunsfer could be closed by the triggered short-circuiting- and the short-circuiting-arc with pulse overlay. A crucial contribution to the welding process is the energy input into the filler material. Many problems result from the physical properties of magnesium, for instance its narrow interval between melting point 600$^{\circ}C$ and vaporization point 1100$^{\circ}C$. The energy input into the filler material has to be regulated in such a way that the wire will melt but not vaporize. For th is reason, special characteristics of power sources hue been examined and optimized with the help of high-speed-photographs of the welding process with particular consideration of the drop detachment. An important improvement of the weld seam profile has been achieved by using filler material of only 1.2 mm in diameter. The experiments hue been made with 2.5 mm thick extruded profiles of AZ31 and AZ6l. The results of tensile testing showed strength values of 80 to 100% of the base metal. B ending angles up to 60$^{\circ}$ have been reached. The fatigue strength under reversed bending of the examined magnesium alloys after welding reaches 50% of the strength of the base metal. When the seam reinforcement is ground of the fatigue strength can be raised up to 75% of the base metal.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.91-95
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• 2017

We were designed the hole transport layer of the new composite skeleton structure having a high charge mobility and thermal stability. In this paper, a hole transport layer material based on thiophene molecular structure capable of hole mobility characteristics and high triplet energy was designed and synthesized. The structures and properties of the synthesized compounds were characterized by NMR, fluorescence spectroscopy and energy band gap. As a result of NMR measurement, it was confirmed that when analyzing the integrated type with the position where the measured peak is displayed, it agrees with the structure of hole transport materials. The emission characteristics of the hole transport layer material showed absorption characteristics at 412 nm and 426 nm, respectively, and exhibited emission characteristics in the range of 469 nm and 516 nm.

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.77-85
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• 2011

The silicon-germanium (SiGe) alloy, which is compatible with silicon semiconductor technology and has a smaller band gap and a lower thermal conductivity than silicon, has been used to fabricate electronic devices such as transistors, photodetectors, solar cells, and thermoelectric devices. This paper reviews the application of SiGe alloys to electronic devices and related technical issues. Since the SiGe alloy comprises germanium whose band gap is smaller than silicon, its band gap is also smaller than that of silicon irrespective of the ratio of silicon to germanium. This narrow band gap of SiGe enables the base thickness of bipolar transistors to decrease without a loss in current gain so that it is possible to improve the speed of bipolar transistors by adopting the SiGe-base. In addition, the conversion efficiency of solar cells is enhanced by the absorption of long-wavelength light in the SiGe absorption layer. Phonon scattering caused by the irregular distribution of alloying elements induces the lower thermal conductivity of SiGe than those of pure silicon and germanium. Because a thin film layer with a low thermal conductivity suppresses thermal conduction through a thermal sink, the SiGe alloy is considered to be a promising material for silicon-based thermoelectric systems.

• Journal of Dental Rehabilitation and Applied Science
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• v.24 no.4
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• pp.325-335
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• 2008

The junction between resilient denture liner and the denture base is difficult to finish and polish due to difference of the physical property of the materials. Gaps tend to be formed during finishing and polishing procedures. The purpose of this study was measuring the width of junctional gap between $Molloplast-B^{(R)}$ and denture base material after finishing and polishing procedure, and evaluating the effect of method and direction on gap width. $Molloplast-B^{(R)}$ was processed (according to the manufacturer's instruction) against Lucitone $199^{(R)}$ acrylic resin. 50 specimens were fabricated with a raised center section. All of specimens were examined and photographed with a stereoscopic microscope(x120), and the largest gap along the junction of $Molloplast-B^{(R)}$ and acrylic resin on each specimen was measured. One-way analysis of variance(ANOVA) and independent t-test at 95% confidence level were used to analyze the data and to compare groups. The results of this study were as follows. In comparison with finishing tools, the gap width was the largest in $Molloplast^{(R)}$-Cutter and the smallest in FSQ-cross cut bur. There was statistically significant difference between FSQ-cross cut bur and $Molloplast^{(R)}$-Cutter(p<0.05). There was no significant difference in gap width between the direction of polishing. The mean value of gap width was the smallest in case of no polishing, and the largest in case of polishing with pumice & tin oxide. There was statistically significant difference between pumice and pumice & tin oxide. From the results, it is concluded that the use of $Molloplast^{(R)}$-Cutter in clinic need serious consideration even though it has good cutting ability. Further careful study is needed for finishing and polishing methods for decreasing gap width in junction of two materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.785-789
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• 2013

Silicon Carbide (SiC) is the material with the wide band-gap (3.26 eV), high critical electric field (~2.3 MV/cm), and high bulk electron mobility (~900 $cm^2/Vs$). These electronic properties allow attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. In general, device design has a significant effect on the switching and electrical characteristics. It is known that in this paper, we demonstrated that the switching performance and breakdown voltage of IGBT is dependent with doping concentration of p-base region and drift layer by using 2-D simulations. As a result, electrical characteristics of SiC-IGBT deivce is higher breakdown voltage ($V_B$= 1,600 V), lower on-resistance ($R_{on}$= 0.43 $m{\Omega}{\cdot}cm^2$) than Si-IGBT. Also, we determined that processing time and cost is reduced by the depth of n-drift region of IGBT was reduced.