• 한국전기전자재료학회논문지
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• 제22권10호
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• pp.808-813
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• 2009

Indium nitride thin films were deposited by the radio-frequency reactive magnetron sputtering method. The indium target was sputtered by the mixture flow ratio of $N_2$ to Ar, 9:1. The effects of growth temperature on the structural, optical, and electrical properties of the films were investigated. With increasing the growth temperature, the crystallinity of the films was improved, and the crystalline size was increased. The energy bandgap for the film grown at $25^{\circ}C$ was 3.63 eV, and the bandgap showed an increasing tendency on the growth temperature. The carrier concentration, Hall mobility and electrical resistivity of the films depended significantly on the growth temperature and the maximum Hall mobility of $32.3\;cm^2$/Vsec was observed for the film grown at $400^{\circ}C$.

• Journal of Industrial and Engineering Chemistry
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• 제67권
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• pp.437-447
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• 2018

Visible-light-driven wide bandgap semiconductor photocatalysts were commonly developed via doping or coupling with another narrow bandgap metal oxide. However, these approaches required extra processing. The aim of study was to evaluate the photocatalytic performance of narrow bandgap $WO_x$ nanoparticles. A mixture of $WO_2$ and $WO_3$ nanoparticles were synthesized using solution precipitation technique. The photodegradation of RhB by these nanoparticles more effective in UV light than in visible light. In antibacterial susceptibility assay, $WO_x$ nanoparticles demonstrated good antibacterial against Gram-positive bacteria. The cell wall of bacterial was the main determinant in antibacterial effect other than $W^{4+}/W^{6+}$ ions and ROS.

• 한국통신학회논문지
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• 제26권4B호
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• pp.406-409
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• 2001

본 논문에서는 IMT-2000 대역에서 전방급전 전력증폭기의 선형성을 개선하여 효율과 대역폭을 극대화 하기 위해 Photonic Bandgap(PBG), 전치왜곡, 2차고조파 튜닝 방식으 f동시에 주 증폭기에 적용하였다. 2차 하모닉 성분이 2차고조파 튜닝 방식에 의해 우수하게 제거되고, 3차 하모닉 성분이 전치왜곡 방식에 의해 제거되며 출력단위 PBG느 s고아대역 특성으로 4차 하모닉 이상까지 제거하는 우수한 특성을 보여주었다. 총체적으로 기존의 전방급전 전력증폭기보다 IMD가 최고 15dBc, 효율은 4%, 대역폭은 2배이상 확대됨으로 전력효율과 대역폭을 극대화시킬 수 있었다.

• 한국ITS학회:학술대회논문집
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• 한국ITS학회 2007년도 제6회 추계학술대회 및 정기총회
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• pp.334-337
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• 2007

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권10호
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• pp.425-430
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• 2003

A CMOS Voltage-Controlled Oscillator(VCO) for application at temperature stable system is designed. The VCO consists of bandgap voltage reference circuit, comparator, and voltage-to-current converter and the VCO has a temperature stable characteristics. The difference between simulated and calculated values is less than about 5% in output characteristics when the input voltage range is from 1V to 3.25V. The CMOS VCO has error less than about $\pm$0.85% in the temperature range from $-25^{\circ}C$ to $75^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• 제29권9호
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• pp.1807-1810
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• 2008

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 ITC-CSCC -2
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• pp.612-614
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• 2000

We propose a new curvature-compensated CMOS bandgap reference circuit that is achieved by varying a current ratio. The proposed circuit is shown to have small temperature coefficient that the output voltage variation is 0.4mV.

• 한국광학회지
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• 제16권2호
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• pp.159-161
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• 2005

We report the selective area bandgap tuning of multiple quantum well structures by an impurity free vacancy induced quantum well intermixing technique. A 3dB waveguide directional coupler was fabricated in the disordered section of an intermixed quantum well sample as a demonstration of photonic device applications.

• 한국통신학회:학술대회논문집
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• 한국통신학회 2004년도 추계종합학술대회 논문 초록집
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• pp.229-229
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• 2004

• 전기의세계
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• 제65권2호
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• pp.15-26
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• 2016