• 제목/요약/키워드: band-pass amplifier

검색결과 83건 처리시간 0.05초

뇌전도 신호 처리용 아날로그 전단부 구현 (Implementation of an analog front-end for electroencephalogram signal processing)

  • 김민철;심재훈
    • 한국산업정보학회논문지
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    • 제18권5호
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    • pp.15-18
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    • 2013
  • 본 논문은 뇌전도 신호 처리를 위한 아날로그 전단부를 제시한다. 일반적으로 뇌전도 신호는 낮은 주파수 대역에 존재하고 신호의 크기가 미약하므로 이를 처리하기 위한 아날로그 전단부는 높은 전압 이득 및 공통모드 제거비를 가져야 하며 저주파 잡음을 효과적으로 억제해야 한다. 본 논문에서 제시하는 아날로그 전단부는 가변 이득 계측 증폭기와 대역통과 필터로 구성되어 있다. 낮은 주파수의 잡음을 제거하기 위하여 주파수 chopping을 적용하였다. 본 논문의 회로는 0.18um CMOS 공정을 이용하여 제작하였으며 측정 결과 최대 60dB의 전압이득과 100dB 이상의 공통모드 제거비를 내는 것을 확인하였다.

소스축퇴를 혼합하여 선형성을 개선시킨 차동 트랜스컨덕턴스 증폭기 (Highly Linear Differential Transconductance Amplifier With Mixed Source-degenerations)

  • 이상근;강소영;박철순
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2008년도 하계종합학술대회
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    • pp.547-548
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    • 2008
  • Linearity improvement technique of transconductor is presented in the paper. In order to certify the linearity improvement of proposed transconductor, the 3rd-order Elliptic low-pass Gm-C filter which provides 5MHz cutoff is implemented by using the transconductor. According to the IIP3 measurement result of filters, proposed filter has higher IIP3 than normal source-degeneration filter; the In-band IIP3 of proposed and normal filter are 10.1 dBm and 7.5 dBm respectively. The filter is fabricated in 1P6M $0.18-{\mu}m$ CMOS while consuming the 3.3mW with 1.8 Vdd. The in-band input-referred noise voltage is $62.3{\mu}Vrms$ and the SFDR is 54.1 dB.

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Ka-band 고감도 위성방송용/LNB 최적화 설계 (Implementation of Ka-band Satellite Broadcasting/LNB with High Dynamic Range)

  • 목광윤;이경보;이영철
    • 한국정보통신학회:학술대회논문집
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    • 한국정보통신학회 2016년도 추계학술대회
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    • pp.66-69
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    • 2016
  • 본 논문에서는 차세대 4K/8K-UHD 위성 방송용 고화질 영상전송을 고려한 Ka-band 위성 통신 방송용 수신기 저 잡음 하향 변환기의 설계방안을 제시하였다. Ka-band은 Ku-band 보다 대기 중의 감쇄가 크기 때문에 강우에 따른 고화질 전송신호 품질에 대한 보상을 위하여 최저 수신감도의 레벨을 향상시키기 위하여 수신기의 동적영역(Dynamic Range)을 크게 확장하도록 저 잡음하향변환기를 설계 하였다. 수신단에서 비선형 특성을 고려하여 저 잡음정합을 3단 증폭기(LNA), 이미지 제거용 대역통과필터(BPF), 주파수 혼합기(Mixer), 주파수 체배기, IF단을 구성하였으며 수신단의 동적영역에 직접 영향을 미치는 파라미터들 사이에서 최적화 과정을 거쳐 LNB를 설계하였다. 설계된 감쇄-대역 저 잡음 하향변환기는 전체 이득이 58.5~60.7dB이며, 잡음지수는 1.38dB로 매우 우수한 특성을 보이며 국부발진기의 위상잡음은 -63.10dBc@100Hz 특성을 나타내었다.

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Evaluation of GaN Transistors Having Two Different Gate-Lengths for Class-S PA Design

  • Park, Jun-Chul;Yoo, Chan-Sei;Kim, Dongsu;Lee, Woo-Sung;Yook, Jong-Gwan
    • Journal of electromagnetic engineering and science
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    • 제14권3호
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    • pp.284-292
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    • 2014
  • This paper presents a characteristic evaluation of commercial gallium nitride (GaN) transistors having two different gate-lengths of $0.4-{\mu}m$ and $0.25-{\mu}m$ in the design of a class-S power amplifier (PA). Class-S PA is operated by a random pulse-width input signal from band-pass delta-sigma modulation and has to deal with harmonics that consider quantization noise. Although a transistor having a short gate-length has an advantage of efficient operation at higher frequency for harmonics of the pulse signal, several problems can arise, such as the cost and export license of a $0.25-{\mu}m$ transistor. The possibility of using a $0.4-{\mu}m$ transistor on a class-S PA at 955 MHz is evaluated by comparing the frequency characteristics of GaN transistors having two different gate-lengths and extracting the intrinsic parameters as a shape of the simplified switch-based model. In addition, the effectiveness of the switch model is evaluated by currentmode class-D (CMCD) simulation. Finally, device characteristics are compared in terms of current-mode class-S PA. The analyses of the CMCD PA reveal that although the efficiency of $0.4-{\mu}m$ transistor decreases more as the operating frequency increases from 955 MHz to 3,500 MHz due to the efficiency limitation at the higher frequency region, it shows similar power and efficiency of 41.6 dBm and 49%, respectively, at 955 MHz when compared to the $0.25-{\mu}m$ transistor.

저전력 용량성 센서 인터페이스를 위한 저잡음 CMOS LDO 레귤레이터 설계 (Design of the low noise CMOS LDO regulator for a low power capacitivesensor interface)

  • 권보민;정진우;김지만;박용수;송한정
    • 센서학회지
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    • 제19권1호
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    • pp.25-30
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    • 2010
  • This paper presents a low noise CMOS regulator for a low power capacitive sensor interface in a $0.5{\mu}m$ CMOS standard technology. Proposed LDO regulator circuit consist of a voltage reference block, an error amplifier and a new buffer between error amplifier and pass transistor for a good output stability. Conventional source follower buffer structure is simple, but has a narrow output swing and a low S/N ratio. In this paper, we use a 2-stage wide band OTA instead of source follower structure for a buffer. From SPICE simulation results, we got 0.8 % line regulation and 0.18 % load regulation.

밀리미터파 포락선 검파기를 이용한 무선통신 (Wireless Communication using Millimeter-Wave Envelope Detector)

  • 이원희;장성진
    • 한국인터넷방송통신학회논문지
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    • 제17권6호
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    • pp.79-82
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    • 2017
  • 본 논문에서는 밀리미터파 포락선 검파기를 이용한 무선통신시스템을 제안하였다. 송신기는 쇼트키 다이오드 기반의 서브 하모닉 믹서를 이용하였으며, 수신기는 밀리미터파 포락선 검파기를 이용하였다. 송신기는 쇼트키 다이오드 서브 하모닉 믹서, 주파수 3배기, 혼안테나로 구성되며, 수신기는 혼안테나, 밀리미터파 포락선 검파기, 저역통과필터, 베이스 밴드 증폭기, 리미팅 증폭기로 구성된다. 1.485 Gbps, 300 GHz에서 아이 다이어그램 (eye-diagram) 측정 결과 에러 프리 (error-free)로 아주 좋은 성능을 보였다. 헤테로다인 수신기에 비해 통신 거리는 줄었으나, 소형 경량화 제작이 가능하다.

A 0.13 ${\mu}m$ CMOS UWB RF Transmitter with an On-Chip T/R Switch

  • Kim, Chang-Wan;Duong, Quoc-Hoang;Lee, Seung-Sik;Lee, Sang-Gug
    • ETRI Journal
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    • 제30권4호
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    • pp.526-534
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    • 2008
  • This paper presents a fully integrated 0.13 ${\mu}m$ CMOS MB-OFDM UWB transmitter chain (mode 1). The proposed transmitter consists of a low-pass filter, a variable gain amplifier, a voltage-to-current converter, an I/Q up-mixer, a differential-to-single-ended converter, a driver amplifier, and a transmit/receive (T/R) switch. The proposed T/R switch shows an insertion loss of less than 1.5 dB and a Tx/Rx port isolation of more than 27 dB over a 3 GHz to 5 GHz frequency range. All RF/analog circuits have been designed to achieve high linearity and wide bandwidth. The proposed transmitter is implemented using IBM 0.13 ${\mu}m$ CMOS technology. The fabricated transmitter shows a -3 dB bandwidth of 550 MHz at each sub-band center frequency with gain flatness less than 1.5 dB. It also shows a power gain of 0.5 dB, a maximum output power level of 0 dBm, and output IP3 of +9.3 dBm. It consumes a total of 54 mA from a 1.5 V supply.

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DBF 수신기를 이용한 DOA 측정시스템의 평가 (Estimation of DOA Measurement System using DBF Receiver)

  • 민경식;박철근;고지원
    • 한국전자파학회:학술대회논문집
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    • 한국전자파학회 2003년도 종합학술발표회 논문집 Vol.13 No.1
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    • pp.219-223
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    • 2003
  • This paper describes an estimation of DOA(Direction Of Arrival) measurement system using DBF receiver with linear array antenna. This DBF receiver is composed of resistive FET mixer using low IF mettled. A radio frequency(RF), a local oscillator(LO) and ail intermediate frequency(IF) considered in this research are 2.09 GHz, 2.08 GHz and 10 MHz, respectively. This receiver is composed of a band-pass filter, a low-pass filter, a DC bias circuit. DOA measurement system is consist of linear array antenna, DBF receiver, AD control box and computer in the anechoic chamber. Receiving antenna is 4-array monopole antenna and DBF receiver is 4-Ch resistive FET mixer without amplifier. DOA algorithm is implemented using MUSIC algorithm with high resolution. We show that the results of DOA is $-30^{\circ},\;0^{\circ}$ and $60^{\circ}$, respectively. And we know that DOA estimation error occur by antenna radiation pattern and fabrication error of antenna array.

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SF6 가스중의 공진주파수에 따른 신호특성 (Characteristic as a Resonance Frequency of $SF_6$ Gas)

  • 이용희;이현동;박정남;신양섭;박장수;서정민
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 하계학술대회 논문집 C
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    • pp.1867-1869
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    • 2003
  • In this paper, chamber(Circuit breaker compartment of C-GIS) made of stainless steel with 4 mm width is used. Artificial defect was made on enclosure or HV conductor of chamber and $SF_6$ gas was injected into it according to pressure. In this experiment, Acoustic emission sensors of different types was used to compare sensitivity to detect acoustic signal occurred by Partial discharge(PD) of according to types and resonance frequency in $SF_6$ gas atmosphere. Sensors used in tests was R6I, R15I and 2/4/6 Pre-Amplifier connected with R6IU without pre. amp. In case of R6IU, gain was adjusted with 40 dB like other sensors and operated by differential mode. Post amplifier(post. amp) and band pass filter(BPF) were developed Gain of post. amp. is 60 dB and BPF has band width of $50{\sim}300$ kHz. Also, envelope circuit developed reduces frequency of AE sensor. As a result, in $SF_6$ atmosphere, R6IU and R6I had resonance frequency of 60 Hz was better than R15I. Also, R6IU was better than R6I because of type property of pre.amp. had differential mode.

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다이폰을 이용한 한국어 문자-음성 변환 시스템의 설계 및 구현 (Design and Implementation of Korean Tet-to-Speech System)

  • 정준구
    • 한국음향학회:학술대회논문집
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    • 한국음향학회 1994년도 제11회 음성통신 및 신호처리 워크샵 논문집 (SCAS 11권 1호)
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    • pp.91-94
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    • 1994
  • This paper is a study on the design and implementation of the Korean Tet-to-Speech system. In this paper, parameter symthesis method is chosen for speech symthesis method and PARCOR coeffient, one of the LPC analysis, is used as acoustic parameter, We use a diphone as synthesis unit, it include a basic naturalness of human speech. Diphone DB is consisted of 1228 PCM files. LPC synthesis method has defect that decline clearness of synthesis speech, during synthesizing unvoiced sound In this paper, we improve clearness of synthesized speech, using residual signal as ecitation signal of unvoiced sound. Besides, to improve a naturalness, we control the prosody of synthesized speech through controlling the energy and pitch pattern. Synthesis system is implemented at PC/486 and use a 70Hz-4.5KHz band pass filter for speech imput/output, amplifier and TMS320c30 DSP board.

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