• Journal of Biomedical Engineering Research
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• v.10 no.2
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• pp.131-138
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• 1989

In this paper the feature of background EEG is extracted by LS Prony Method for the analysis of background EEG in the time domain. Autocorrelation leg estimates are not required with the LS Prony method. The Prony method is required any the solution of two serfs of simultaneous linear equation and a polynominal rooting. That the optimal order of this model is the 6-th order is determined by using Akaike' s Information Criterial test. From the experimential results the alpha band amplitude is the largest among alpha band beta band theta band delta band and beta band amplitude is larger than that of the delta band and theta band. The sustained time for the alph a band, the beta band, the delta band and the theta band is 2, 3461 (sec), 0.6490(sec), 0.3120(sec), 0.7046(sec) respectively. Consequenty the alpha band is maintained in the whole subjects, the beta band, the delta band, the theta band are existed intermittently in each subjects.

• Proceedings of the KIEE Conference
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• 2000.07e
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• pp.56-59
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• 2000

$CdGaInS_4$ and $CdGaInS_4:Er^{3+}$ single crystals crystallized in the rhombohedral(hexagonal) structure. with lattice constants $a=3.913{\AA},\;c=37.245{\AA}$ for $CdGaInS_4$, and $a=3.899{\AA}$ and $c=36.970{\AA}$ for $CdGaInS_4:Er^{3+}$. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of these compounds had a direct and indirect band gap. the direct and indirect energy gaps are found to be 2.771 and 2.503 eV for $CdGaInS_4$, and 2.665 and 2.479 eV for $CdGaInS_4:Er^{3+}$ at 10 K. The temperature dependence of the optical energy gap was well represented by the Varshni equation. In $CdGaInS_4$, the values of ${\alpha},\;{\beta}$ of the direct and the indirect energy gap were found to be $7.57{\times}10^{-4}eV/K$. $6.53{\times}10^{-4}eV/K$ and 240K. 197K. and the values of ${\alpha}$ and ${\beta}$ of the direct and the indirect energy gap in the $CdGaInS_4:Er^{3+}$ were given by $8.28{\times}10^{-4}eV/K,\;2.08{\times}10^{-4}eV/K$ and 425 K, 283 K, respectively.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.8
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• pp.15-27
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• 2008

In this paper, an EBG(Electromagnetic BandGap) resonator antenna with a stripline type FSS(Frequency Selective Surface) superstrate for PCS-band base station antennas is proposed. The characteristics of resonant frequency and -3dB bandwidth of a unit cell of a superstrate are first analyzed by varing several design parameters such as a strip width and a unit cell width in order to design an EBG resonator antenna satisfying the required antenna gain and bandwidth for PCS-band base station antennas. Among various unit cell shapes, strip dipole and stripline are considered and their characteristics are compared. It was found that a resonant length of the EBG resonator antenna becomes smaller when the stripline shape is used and the control of the bandwidth is also much easier. By using the unit cell simulation results, planar and cylindrical EBG resonator antennas at PCS-band are designed.

• Korean Journal of Materials Research
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• v.12 no.7
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• pp.587-590
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• 2002

A silver indium sulfide ($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The crystal field splitting, $\Delta_{cr}$ , and the spin orbit splitting, $\Delta_{so}$ , have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_{g}$(T), was determined.d.

• Journal of IKEEE
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• v.24 no.4
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• pp.1122-1128
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• 2020

Bandwidth Extension refers to restoring and expanding a narrow band signal(NB) that is damaged or damaged in the encoding and decoding process due to the lack of channel capacity or the characteristics of the codec installed in the mobile communication device. It means converting to a wideband signal(WB). Bandwidth extension research mainly focuses on voice signals and converts high bands into frequency domains, such as SBR (Spectral Band Replication) and IGF (Intelligent Gap Filling), and restores disappeared or damaged high bands based on complex feature extraction processes. In this paper, we propose a model that outputs an bandwidth extended signal based on an autoencoder among deep learning models, using the residual connection of one-dimensional convolutional neural networks (CNN), the bandwidth is extended by inputting a time domain signal of a certain length without complicated pre-processing. In addition, it was confirmed that the damaged high band can be restored even by training on a dataset containing various types of sound sources including music that is not limited to the speech.

• Advances in materials Research
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• v.2 no.2
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• pp.77-91
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• 2013

High quality nanoparticles of neodymium barium niobium ($NdBa_2NbO_6$) perovskites have been synthesized using an auto ignition combustion technique for the first time. The nanoparticles thus obtained have been characterized by powder X-ray diffraction, thermo gravimetric analysis, differential thermal analysis, Fourier transform infrared spectroscopy, Raman spectroscopy and transmission electron microscopy. UV-Visible absorption and photoluminescence spectra of the samples are also recorded. The structural analysis shows that the nano powder is phase pure with the average particle size of 35 nm. The band gap determined for $NdBa_2NbO_6$ is 3.9 eV which corresponds to UV-radiation for optical inter band transition with a wavelength of 370nm. The nanopowder could be sintered to 96% of the theoretical density at $1325^{\circ}C$ for 2h. The ultrafine cuboidal nature of nanopowders with fewer degree of agglomeration improved the sinterability for compactness at relatively lower temperature and time. During the sintering process the wide band gap semiconducting behavior diminishes and the material turns to a high permittivity dielectric. The microstructure of the sintered surface was examined using scanning electron microscopy. The striking value of dielectric constant ${\varepsilon}_r=43$, loss factor tan ${\delta}=1.97{\times}10^{-4}$ and the observed band gap value make it suitable for many dielectric devices.

• Korean Journal of Materials Research
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• v.33 no.5
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• pp.189-194
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• 2023

This study uses first-principles calculations to investigate the mechanical properties and effect of strain on the electronic properties of the 2D material 1H-PbX₂ (X: S, Se). Firstly, the stability of the 1H Pb-dichalcogenide structures was evaluated using Born's criteria. The obtained results show that the 1H-PbS₂ material possesses the greatest ideal strength of 3.48 N/m, with 3.68 N/m for 1H-PbSe₂ in biaxial strain. In addition, 1H-PbS₂ and 1H-PbSe₂ are direct semiconductors at equilibrium with band gaps of 2.30 eV and 1.90 eV, respectively. The band gap was investigated and remained almost unchanged under the strain ε_xx but altered significantly at strains ε_yy and ε_bia. At the fracture strain in the biaxial direction (19 %), the band gap of 1H-PbS₂ decreases about 60 %, and that of 1H-PbSe₂ decreases about 50 %. 1H-PbS₂ and 1H-PbSe₂ can convert from direct to indirect semiconductor under the strain ε_yy. Our findings reveal that the two structures have significant potential for application in nanoelectronic devices.

• Proceedings of the Optical Society of Korea Conference
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• 2005.07a
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• pp.266-267
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• 2005

• Information and Communications Magazine
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• v.19 no.12
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• pp.14-25
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• 2002

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.1
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• pp.65-68
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• 2004

The performances of millimeter wave Power amplifier have been improved by using PBG (photonic bandgap structure) in this paper. The PBG structure has been optimized to obtain the lowpass characteristics in Ka band and employed at output port of Ka band power amplifier. The harmonics of the power amplifier have been suppressed by the PBG of output port and the proposed PBG has suppressed the second harmonic to 40dBc around 50 GHz. The improvements of IMD and PAE of the amplifier employing the PBG structure are obtained $15\%$ and $25\%$, compared with those of the conventional Ka band power amplifier, respectively.