• 대한화학회지
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• 제30권1호
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• pp.47-50
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• 1986

산화아연에 흡착된 $O_2^-$의 광탈착이 ZnO-$O_2(N_2)$-rubrene-bromobenzene계에서 연구되었다. 산화아연의 금지대 에너지(3.2eV)보다 큰 에너지를 가진 빛을 계에 조사할 때, 산화아연의 양이 증가함에 따라 변화된 rubrene의 양도 증가하였다. 그러나 3.2eV보다 적은 에너지의 빛을 조사시켰을 때는 산화아연의 양이 증가함에 따라 변화된 rubrene의 양은 감소하였다. ZnO-$O_2$-rubrene-bromobenzene계와 ZnO-$N_2$-rubrene-bromobenze계에서의 변화된 rubrene의 양은 현저한 차이가 있었다. 이 사실들로 부터 산화아연에 흡착된 $O_2^-$가 광탈착 과정에서 단일항 산소로 변화하고 변화된 단일항 산소가 rubrene과 반응하는 것으로 생각되었다.

• 한국재료학회지
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• 제15권8호
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• pp.543-547
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• 2005

Organic electroluminescence devices were made from 1,4-bis-(9-anthrylvinyl)benzene (AVB) and 1,4-bis-(9-aminoanthryl)benzene (AAB) anthracene derivatives. Device structure was ITO/AVB/PANI(EB)/Al (multi-layer device) and ITO/AAB:DCM/Al(single-layer device). In these devices, AVB, polyaniline(emeraldine base) (PANI(EB)) and AAB were used as the emitting material. 4-(dicyanomethylene)-2-methyl-6-p-(dimethylamino)styryl-4H -pyran(DCM) was used as red fluorescent dopant. We studied change of fluorescence wavelength with concentration of DCM doped in AAB. The ionization potential (IP) and optical band gap (Eg) were measured by cyclic voltammetry and UV-visible spectrum. We compared with difference of emitting wavelength between photoluminescence and electroluminescence spectrum. In case of the multi-layer device, PANI and AVB EL spectra have similar wave pattern to each PL spectrum and when PAM and AVB were used at the same time, and multi-layer device showed that a balanced recombination and radiation kom PANI and AVB. In case of the single-layer device, with the increase of DCM concentration, the blue emission decreases and red emission increases. This indicates that DCM was excited by the energy transfer from AAB to DCM or the direct recombination at the dopant sites due to carrier trapping, or both. The device with $1.0wt\%$ DCM concentration gave white light.

• 한국재료학회지
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• 제15권8호
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• pp.491-495
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• 2005

(Zn,Mg)O (ZMO) thin films doped with Ga $(0\~0.03mol\%)$ in the target source were prepared by pulsed laser deposition on c-plane sapphire substrates at $500^{\circ}C$, and the effect of Ga contents on the properties of the electrical, optical and crystal properties of the deposited films was investigated. From X-ray diffraction patterns, ZMO film doped with $0.02 mol\%$ Ga showed crystal structure with c-axis preferred orientation, showing only the (0002) and (0004) diffraction peaks. In contrast, ZMO film doped with $Ga=0.03 mol\%$ showed a randomly oriented crystal structure. All the samples were highly transparent, showing the transmittance values of above $85\%$ in the visible region. For all the Ga doped ZMO films, the value of energy band gap was found to be about 3.5 eV, regardless of their Ga contents. From the Hall measurements, the resistivity and the carrier density for the ZMO film doped with $0.01 mol\%$ Ga were about $5\times10^{-4}\Omega-cm$ and $2\times10^{21}cm^{-3}$, respectively.

• 한국재료학회지
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• 제27권4호
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• pp.216-220
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• 2017

The effect of electron beam (EB) irradiation on the electrical properties of Zn-Sn-O (ZTO) thin films fabricated using a sol-gel process was investigated. As the EB dose increased, the saturation mobility of ZTO thin film transistors (TFTs) was found to slightly decrease, and the subthreshold swing and on/off ratio degenerated. X-ray photoelectron spectroscopy analysis of the O 1s core level showed that the relative area of oxygen vacancies ($V_O$) increased from 10.35 to 12.56 % as the EB dose increased from 0 to $7.5{\times}10^{16}electrons/cm^2$. Also, spectroscopic ellipsometry analysis showed that the optical band gap varied from 3.53 to 3.96 eV with increasing EB dose. From the results of the electrical property and XPS analyses of the ZTO TFTs, it was found that the electrical characteristic of the ZTO thin films changed from semiconductor to conductor with increasing EB dose. It is thought that the electrical property change is due to the formation of defect sites like oxygen vacancies.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.461-461
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• 2013

Over the last decade, zinc oxide (ZnO) thin films have attracted considerable attention owing to large band gap of 3.37 eV and large exciton binding energy of 60 meV at room temperature [1-3]. Recent interest in ZnO related researches has been switched into the fabrication and characterization of low-dimensional nanostructures, such as nano-wires and nano-dots that can be applicable to manufacture the optoelectronic devices such as ultraviolet lasers, light-emitting-diodes and detectors. Since the optical properties of ZnO nano-structures might be distinct from those of bulk materials or thin films, the low-dimensional phenomena should be examined further. In order to utilize such advanced optoelectronic devices, one of the challenges is how to control the surface state related emissions that are drastically increased with increasing the density of the nano-structures and the surface-to-volume ratio. This paper reports the synthesis and characterization of self-assembled ZnO hexagonal nano-disks grown by radio-frequency magnetron sputtering. X-ray diffraction data and scanning electron microscopy data showed that ZnO hexagonal nano-disks were nucleated on top of the flat surfaces as the film thickness reached to 1.56 ${\mu}m$ and then the number of nano-disks increased with increasing the film thickness. The lateral size of hexagonal nano-disks was ~720 nm and height was ~74 nm. The strong photo luminescence spectra obtained at 10 K was also observed, which was assigned to a surface exciton emission at 3.3628 eV arising from the surface sites of hexagonal nano-disks.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.389-389
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• 2013

HfOx (Hafnium oxide)는 ~25의 고유전상수, 5.25 eV의 비교적 높은 Band-gap을 갖는 물질로 MOSFET (metal-oxide semiconductor field-effect-transistor) 구조의 Oxide 박막을 대체 가능한 물질로 연구가 지속되고 있다. 현재까지 진행된 대다수의 연구는 증착 조건에 따른 박막의 결정학적 및 전기적 특성에 대한 주제로 진행되었고 다양한 연구 결과가 보고된바 있다. 하지만 기존의 연구 기법은 박막의 nanomechanics 특성에 대한 연구가 부족하여 이를 보완하기 위한 연구가 절실하다. 따라서 본 연구에서는 HfOx 박막 내 포함된 산소가 고온 열처리 과정에서 빠져나감으로 인한 박막의 nanomechanics 특성을 확인하고자 하였다. 시료는 rf magnetron sputter를 이용하여Si (silicon) 기판위에 Hafnium target으로 산소유량(5, 10, 15 sccm)을 달리하여 증착하였고, 이후 furnace에서 $400^{\circ}C$에서 $1,000^{\circ}C$까지 질소분위기에서 20분간 열처리를 실시하였다. 실험결과 시료의 전기적 특성을 I-V 곡선을 측정하여 확인하였고, 증착 시 산소 유량이 5 sccm에서 15 sccm으로 증가함에 따라서 누설전류 특성은 급격히 향상되었고, 열처리 온도가 증가함에 따라 감소하는 특성을 나타내었다. 또한 시료의 nanomechanics 특성을 확인하기 위하여 nano-indenter를 이용하여 시료의 표면강도(surface hardness)와 탄성계수(elastic modulus)를 확인하였다. 측정결과 5 sccm 시료의 표면강도와 탄성계수는 상온에서 열처리 온도가 증가함에 따라 각각 7.75 GPa에서 9.19 GPa로, 그리고 133.83 GPa에서 126.64 GPa로 10, 15 sccm의 박막의 비하여 상대적으로 균일한 특성을 나타내었다. 이는 증착 시 박막 내 과포화된 산소가 열처리 과정에서 빠져나감으로 인한 것이며, 또한 과포화된 정도에 따라 더 적은 열처리 에너지에 의하여 박막을 빠져나감으로 인한 것으로 판단된다. 또한 열처리 과정에서 산소가 빠져나가는 상대적인 flux의 영향으로 인하여 박막의 mechanical한 균일도의 변화가 나타났다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.630-630
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• 2013

Recently, atomically smooth hexagonal boron nitride(h-BN) known as a white graphene has drawn great attention since the discovery of graphene. h-BN is a III-V compound and has a honeycomb structure very similar to graphene with smaller lattice mismatch. Because of strong covalent sp2bonds like graphene, h-BN provides a high thermal conductivity and mechanical strength as well as chemical stability of h-BN superior to graphene. While graphene has a high electrical conductivity, h-BN has a highly dielectric property as an insulator with optical band gap up to 6eV. Similar to the graphene, h-BN can be applied to a variety of field, such as gate dielectric layers/substrate, ultraviolet emitter, transparent membrane, and protective coatings. However, up until recently, obtaining and controlling good quality monolayer h-BN layers have been too difficult and challenging. In this work, we investigate the controlled synthesis of h-BN layers according to the growth condition, time, temperature, and gas partial pressure. h-BN is obtained by using chemical vapor deposition on Cu foil with ammonia borane (BH3NH3) as a source for h-BN. Scanning Transmission Electron Microscopy (STEM, JEOL-JEM-ARM200F) is used for imaging and structural analysis of h-BN layer. Sample's surface morphology is characterized by Field emission scanning electron microscopy (SEM, JEOL JSM-7100F). h-BN is analyzed by Raman spectroscopy (HORIBA, ARAMIS) and its topographic variations by Atomic force microscopy (AFM, Park Systems XE-100).

• Journal of Microbiology and Biotechnology
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• 제28권6호
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• pp.957-967
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• 2018

A novel $g-C_3N_4$/ZnO/stellerite (CNZOS) hybrid photocatalyst, which was synthesized by coupled hydro thermal-thermal polymerization processing, was applied as an efficient visible-light-driven photocatalyst against Staphylococcus aureus. The optimum synthesized hybrid photocatalyst showed a sandwich structure morphology with layered $g-C_3N_4$ (doping amount: 40 wt%) deposited onto micron-sized ZnO/stellerite particles (ZnO average diameter: ~18 nm). It had a narrowing band gap (2.48 eV) and enlarged specific surface area ($23.05m^2/g$). The semiconductor heterojunction effect from ZnO to $g-C_3N_4$ leads to intensive absorption of the visible region and rapid separation of the photogenerated electron-hole pairs. In this study, CNZOS showed better photocatalytic disinfection efficiency than $g-C_3N_4/ZnO$ powders. The disinfection mechanism was systematically investigated by scavenger-quenching methods, indicating the important role of $H_2O_2$ in both systems. Furthermore, $h^+$ was demonstrated as another important radical in oxidative inactivation of the CNZOS system. In respect of the great disinfection efficiency and practicability, the CNZOS heterojunction photocatalyst may offer many disinfection applications.

• 한국응용과학기술학회지
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• 제33권1호
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• pp.23-29
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• 2016

육방정계 우르자이츠형의 산화아연은 n형 반도체로써 3.37 eV의 넓은 밴드갭 에너지와 60 meV의 큰 엑시톤 바인딩 에너지를 가진 물질이다. 가스센서, 발광 다이오드, 염료 감응 태양 전지, 염료오염의 분해 등의 넓은 범위에서 활용이 가능하다. 합성 시 마이크로파 수열합성법을 사용하게 되면 높은 수율, 빠른 반응속도, 에너지 절약의 장점이 있다. 아민첨가제는 수산이온 생성 및 킬레이트 효과로 인해 산화아연 입자 형상을 조정하는 역할을 한다. 본 논문에서는 전구체로는 질산아연육수화물을 사용하였고, 형상조정제로는 에탄올아민, 에틸렌디아민, 디에틸렌트리아민, 헥사메틸렌테트라민을 사용하였다. 수산화소듐을 사용하여 용액을 pH 11로 조정하였다. 합성된 산화아연은 별모양, 막대형, 꽃모양, 원추형의 다양한 형상을 확인할 수 있었다. 아민첨가제에 의한 물리 화학적 특성과 광학적 특성을 분석하기 위해 XRD, SEM, EDS, FT-IR, UV-vis 스펙트럼, PL 스펙트럼을 사용하였다.

• 한국인터넷방송통신학회논문지
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• 제20권5호
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• pp.135-141
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• 2020

본 논문은 다양하게 적용 가능한 슬리브 구조를 갖는 모노폴 안테나 자료를 정리한 것이다. 슬리브 모노폴 안테나는 광대역 특성을 갖고 다주파수용으로 사용된다. 슬리브 모노폴 안테나는 복사기(radiator)인 수직 도체부분과 동축 케이블과 같은 구조를 갖는 슬리브(sleeve)로 구성되어져 있다. 슬리브는 복사기와 개방 스터브 동작을 한다. 슬리브 길이는 안테나 전체 길이의 1/3~2/3로 되어야 한다. 슬리브 구조를 갖는 모노폴 안테나는 차량용 와이퍼 안테나에 적용 가능하다. 더불어, 로딩 코일을 이용한 광대역 슬리브 안테나, ISM 밴드용 광대역 프린티드 슬리브 모노폴 안테나, 갭 슬리브와 이중 슬리브, 하프 커팅을 이용한 UWB 평면형 모노폴 안테나에 적용한 사례를 구조와 광대역 측면에서 정리 분석하였다.