• The Transactions of the Korean Institute of Power Electronics
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• v.23 no.3
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• pp.168-173
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• 2018

In this paper, an auxiliary power supply (APS) for railroad cars is proposed. The APS can reduce the number of devices required to supply power through structural modification and operates at a high switching frequency by application of a SiC device. The voltage stress on the device in the proposed circuit can be reduced to less than half of the input voltage of the system; thus, a device with low breakdown voltage can be designed. By adapting a SiC device instead of an IGBT device, the proposed circuit can reduce switching and conduction losses and operate at a high switching frequency, thereby reducing output voltage and inductor current ripples in the proposed circuit. The theoretical analysis results of the proposed APS are verified with a 40 kW computer-based simulation and a 2 kW experiment.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.3
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• pp.304-310
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• 2008

Generally U-slotted patch antenna with PEC(Perfect Electric Conductor) ground plane is used for mobile telecommunication. However the improvement of the bandwidth is required to enlarge the capability of mobile telecommunication, In this paper, U-slotted patch antenna with EBG(Electromagnetic Band-Gap) ground plane is proposed to enlarge thr bandwidth and its radiation characteristics are investigated. To conform the bandwidth improvement, two kinds of U-slotted patch antennas with EBG and PEC ground plane are designed, fabricated, and radiation characteristics are measured. It is shown that the proposed antenna is wider than U-slotted patch antenna with PEC ground plane in bandwidth.

• Journal of the Korean Ceramic Society
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• v.48 no.2
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• pp.200-204
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• 2011

Increase of surface area and decrease of band gap in $TiO_2$ semiconductors are significant to improve the efficiency of water splitting by photoelectrolysis. In this study $TiO_2$ nanotube arrays with ~7 um length and ~100 nm diameter were fabricated by an anodizing technique of titanium foils using DMSO (dimethyl sulfoxide)-based electrolytes. Then to control the band gap of the $TiO_2$ arrays, they were annealed at $550^{\circ}C$ for up to 180 min in $NH_3$ gas ambient. The samples annealed in $NH_3$ gas for 30 min and 60 min showed superior photo-conversion efficiency for water splitting under white and visible light. A $TiO_2$ nanotube annealed in $NH_3$ gas ambient for a period longer than 120 min showed 1 order higher leakage current. It is believed that the decrease of band gap and increase of conductivity in $TiO_2$ nanotube arrays due to $NH_3$ gas treatments result in the superior water-splitting performance.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.425.2-425.2
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• 2014

$TiO_2$ possesses great photocatalytic properties but absorbs only UV light owing to high band gap energy (Eg = 3.2 eV). By narrowing the band gap through doping a metal ion, the photocatalytic activity can be enhanced in condition of the light of a higher than 365 nm wavelength. Main purpose for this study is to evaluate the activities of metal doped $TiO_2$ for degrading the volatile organic compounds (VOCs); p-xylene is chosen in the VOC removal test. Vanadium is selected in this study because an ionic radius of vanadium is almost the same as titanium ion and vanadium can be easily doped into $TiO_2$. V-doped $TiO_2$ was synthesized by sol-gel methods and compared with pure $TiO_2$. Pure TiO2 powder and V-doped $TiO_2$ powder were coated on glasses by spray coating method. UV-Visible spectrophotometer was used for the measurement of the band gap changes. VOC concentration degradation level was tested with using various UV light sources in an enclosed chamber. Catalytic activities of prepared samples were evaluated based on the experimental results and compared with coated pure $TiO_2$ sample.

• ETRI Journal
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• v.41 no.6
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• pp.731-738
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• 2019

We proposed a novel electromagnetic band-gap (EBG) cell-embedded antenna structure for reducing the interference that radiates at the antenna edge in wireless access in vehicular environment (WAVE) communication systems for vehicle-to-everything communications. To suppress the radiation of surface waves from the ground plane and vehicle, EBG cells were inserted between micropatch arrays. A simulation was also performed to determine the optimum EBG cell structure located above the ground plane in a conformal linear microstrip patch array antenna. The characteristics such as return loss, peak gain, and radiation patterns obtained using the fabricated EBG cell-embedded antenna were superior to those obtained without the EBG cells. A return loss of 35.14 dB, peak gain of 10.15 dBi at 80°, and improvement of 2.037 dB max at the field of view in the radiation beam patterns were obtained using the proposed WAVE antenna.

• Bulletin of the Korean Chemical Society
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• v.30 no.7
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• pp.1611-1615
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• 2009

We designed new anthracene-based host material to increase color purity as well as device efficiency. The new blue host, 9,10-bis(2,4-dimethylphenyl)anthracene (BDA), has highly twisted structure and wide band gap due to ortho interaction between anthracene and introduced 2,4-dimethylphenyl substituents. BDA exhibited deep blue fluorescence in solution (${\lambda}_{max}$ = 410 nm) and in solid state (${\lambda}_{max}$ = 429 nm), respectively, with the wide optical band gap (E = 3.12 eV). Blue-light-emitting OLEDs using obtained host and 2% Flu-DPAN as emitter showed 8 cd/A of high efficiency as well as high color purity [CIE coordinates = (0.15, 015)].

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.10
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• pp.945-948
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• 2016

Recent premium smartphones commonly employ a metal frame and this trend is currently spreading over mid-range smartphones. However, the metal frame becomes a good coupling path of electromagnetic noises emitted from digital components in smartphones and then increases radio-frequency interference(RFI) to RF antennas located at top and bottom sides of smartphones. This paper proposed a metal frame with EBG(Electromagnetic Band Gap) structure to reduce the noise coupling to antenna by suppressing surface wave on the metal frame. By simulation, it is confirmed that the proposed metal frame with $7{\times}6$ mushroom-type EBG array pattern with multi-via can reduce the noise coupling to RF antenna by about 20 dB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.99-100
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• 2007

ZnO films on $Al_2O_3$ substrates were grown using a pulsed laser deposition method. Through photoluminescence (PL) and X-ray diffraction (XRD) measurements, the optimum growth conditions for the ZnO growth were established. The results of the XRD measurements indicate that ZnO films were strongly oriented to the c-axis of the hexagonal structure and epitaxially crystallized under constraints created by the substrate. The full width half maximum for a theta curve of the (0002) peak was $0.201^{\circ}$. Also, from the PL measurements, the grown ZnO films were observed to give free exciton behaviour, which indicates a high quality of the epilayer. The Hall mobility and carrier density of the ZnO films at 293 K were estimated to be $299\;cm^2/V\;s$ and $8.27\;{\times}\;10^{16}\;cm^{-3}$, respectively. The absorption spectra revealed that the temperature dependance of the optical band gap on the ZnO films was $E_g(T)\;=\;3.439\;eV\;-\;(5.30\;{\times}\;10^{-4}\;ev/K)T^2(367\;+\;T)$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.121-122
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• 2007

Single crystal $CuAlSe_2$ layers were grown on thoroughly etched sem-insulating GaAs(l00) substrate at $410^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$ source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}l0^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;155\;K)$.

• Journal of IKEEE
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• v.22 no.4
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• pp.1202-1205
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• 2018

In this paper, we proposed ggNMOS based on 4H-SiC material and analyzed its electrical characteristics. 4H-SiC is a wide band-gap meterial, which is superior in area contrast and high voltage characteristics to Si material, and is attracting attention in the power semiconductor field. The proposed device has high robustness and strong snapback characteristics. The process consisted of SiC process and electrical characteristics were analyzed by TLP measurement equipment.