• 제목/요약/키워드: band gap engineering

검색결과 729건 처리시간 0.027초

Design and implementation of electromagnetic band-gap embedded antenna for vehicle-to-everything communications in vehicular systems

  • Kim, Hongchan;Yeon, KyuBong;Kim, Wonjong;Park, Chul Soon
    • ETRI Journal
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    • 제41권6호
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    • pp.731-738
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    • 2019
  • We proposed a novel electromagnetic band-gap (EBG) cell-embedded antenna structure for reducing the interference that radiates at the antenna edge in wireless access in vehicular environment (WAVE) communication systems for vehicle-to-everything communications. To suppress the radiation of surface waves from the ground plane and vehicle, EBG cells were inserted between micropatch arrays. A simulation was also performed to determine the optimum EBG cell structure located above the ground plane in a conformal linear microstrip patch array antenna. The characteristics such as return loss, peak gain, and radiation patterns obtained using the fabricated EBG cell-embedded antenna were superior to those obtained without the EBG cells. A return loss of 35.14 dB, peak gain of 10.15 dBi at 80°, and improvement of 2.037 dB max at the field of view in the radiation beam patterns were obtained using the proposed WAVE antenna.

Investigation of thermal annealing effects on the optical transparency and luminescent characteristics of Eu-doped Y2O3 thin films

  • Chung, Myun Hwa;Kim, Joo Han
    • Journal of Ceramic Processing Research
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    • 제20권4호
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    • pp.431-435
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    • 2019
  • The thermal annealing effects on the optical transparency and luminescent characteristics of the Eu-doped Y2O3 thin films have been investigated. The as-deposited Y2O3:Eu films exhibited an optical band gap of 5.78 eV with a transparency of 89 % at a wavelength of 550 nm. As the annealing temperature increased from 1000 to 1300 ℃, the optical band gap and transparency of the films decreased from 5.77 to 4.91 eV and from 86.8 to 64.5 % at 550 nm, respectively. The crystalline quality of the films was improved with increasing annealing temperature. The annealed Y2O3:Eu films emitted a red-color photoluminescence (PL) with the highest emission peak near 612 nm. The PL intensity was increased with increasing annealing temperature to 1200 ℃, resulting from the improvement in the crystalline quality of the films. The PL intensity was decreased with further increasing temperature above 1200 ℃ due to the formation of Y2SiO5 phase by the reaction of the film with the quartz substrate.

압전 밴드 갭 구조물의 면내·외 방향 체적 탄성파 전파 특성 해석을 위한 유한요소 모델링 (Finite Element Modeling for the Analysis of In- and Out-of-plane Bulk Elastic Wave Propagation in Piezoelectric Band Gap Structures)

  • 김재은;김윤영
    • 대한기계학회논문집A
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    • 제35권8호
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    • pp.957-964
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    • 2011
  • 본 연구에서는 압전 밴드 갭 구조물(포논 결정) 에 대한 체적 탄성파의 전파 특성을 주파수 및 모드 별로 파악하기 위한 유한 요소법의 적용 방안을 제안하였다. 이를 위해 체적 탄성 진행파의 면내 모드 뿐만 아니라 면외 모드를 포함하도록 3 차원 주기 경계 조건을 고려하였다. 특히, 체적 탄성파 모드 간의 비연성 특성을 전기 분극 방향에 따라 유도한 다음, 그 결과를 유한 요소 모델링에 반영하였다. 제안된 방법은 실제 시뮬레이션을 통해 다양한 형태의 압전 밴드 갭 구조물의 파동 특성 분석에 적용될 수 있는 일반적이고 효율적인 방법임을 확인하였다.

Multi-Layer 구조를 사용한 다중 대역 내장형 칩 안테나 (Multi-Band Internal Chip Antenna Using Multi-Layer Substrate for Mobile Handset)

  • 조상혁;조일훈;이인영;표성민;백정우;김영식
    • 한국전자파학회논문지
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    • 제19권7호
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    • pp.778-784
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    • 2008
  • 본 논문에서는 다층 구조를 이 용하여 다중 대 역(GSM, DCS, PCS, WCDMA, 2.3 GHz WiMAX)에서 동작하며, 다층 구조이므로 공간 재활용이 가능하여 안테나 크기를 효율적으로 줄일 수 있는 칩 안테나를 제안하였다. 또한, 중간층에 air-gap을 삽입하여 병렬 캐피시턴스 성분을 감소시켜 넓은 대역폭을 얻을 수 있었다. 제안한 안테나는 RO4003 유전체(${\varepsilon}_r=3.4$)를 사용한 다층 구조의 PIFA이고, 안테나 부피는 $22{\times}5.5{\times}4.0\;mm^3$이다. 측정 결과, 안테나 효율 45 % 이상인 대역폭은 low-band에서 80 MHz($880{\sim}960\;MHz$)이며, high-band에서 690 MHz($1,710{\sim}2,400\;MHz$)을 보였으며, 안테나의 고차 모드와 최상위 층의 공진으로 인해 high-band에서 넓은 대역폭을 갖게 되는 것으로 사료된다.

호이슬러 화합물 Co2MnSi에서 전자구조계산을 통한 에너지 간격의 원인에 대한 고찰 (Investigation on the Origin of Band Gap in Heusler Alloy Co2MnSi through First-principles Electronic Structure Calculation)

  • 김동철;이재일
    • 한국자기학회지
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    • 제18권6호
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    • pp.201-205
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    • 2008
  • 호이슬러 구조의 대표적 반쪽금속인, $Co_2MnSi$에서 에너지 간격이 생기는 원인을 실제적인 전자구조 계산을 통해 검토하기 위해 호이슬러 구조에서 부분을 이루는 zinc-blende 구조의 CoMn과 하프 호이슬러 구조를 가진 CoMnSi, 그리고 가상적인 화합물인 $Co_2Mn$의 전자구조를 제일원리 방법을 통해 계산하였다. 각 화합물에서 계산된 상태밀도를 이용하여 띠 혼성이나 에너지 간격 등을 고찰한 결과 $Co_2MnSi$에서 에너지 간격이 생기는 원인이 Galanakis 등이 설명한 방식이 그대로 적용되지 않았으며, Si 원자의 역할 또한 중요함을 알게 되었다. 각 화합물에서 얻은 다수스핀과 소수스핀 전자수를 통해 이들 화합물의 자성도 고찰하였다.

Properties of CdS:In Thin Films according to Substrate Temperature

  • Park, G.C;Lee, J.;Chang, H.D.;Jeong, W.J.;Park, J.Y.;Kim, Y.J.;Yang, H.H.;Yoon, J.H.;Park, H.R.;Lee, K.S.;Gu, H.B.
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.857-860
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    • 2004
  • Cubic CdS thin film with the strongest XRD peak (111) at diffraction angle $(\theta)$ of 26.5 was well made at substrate temperature of $150^{\circ}C$. At that time, lattice constant a of the thin film was $5.79{\AA}$, grain size of that was more over ${\mu}m$ and it's resistivity was over $10^3{\Omega}cm$. And the peak of diffraction intensityat miller index (111) of CdS:In thin film with dopant In of 1 atom% was shown higher about 20 % than undoped CdS thin film. Also, CdS:In thin film had in part hexagonal structure among cubic structure as secondary phase. Lattice constant of a and grain size of secondary phase of the film with dopant In of 1 atom% was $5.81{\AA}$ and around $1{\mu}m$ respectively The lowest resistivity of $5.1{\times}10^{-3}{\Omega}cm$ was appeared on dopant In of 1.5 atom%. Optical band gap of undoped CdS thin film was 2.43 eV and CdS:In thin film with dopant In of 0.5 atom% had the largest band gap 2.49 eV.

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Annealing Temperature Dependence on the Physicochemical Properties of Copper Oxide Thin Films

  • Park, J.Y.;Kwon, T.H.;Koh, S.W.;Kang, Y.C.
    • Bulletin of the Korean Chemical Society
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    • 제32권4호
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    • pp.1331-1335
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    • 2011
  • We report the results of the characterization of Cu oxide thin films deposited by radio frequency (r.f.) magnetron sputtering at different annealing temperatures. The deposited Cu oxide thin films were investigated by scanning electron microscopy, spectroscopic ellipsometry, X-ray diffraction, atomic force microscopy, Xray photoelectron spectroscopy, and contact angle measurements. The thickness of the films was about 180 nm and the monoclinic CuO phase was detected. The $CuO_2$ and $Cu(OH)_2$ phases were grown as amorphous phase and the ratio of the three phases were independent on the annealing temperature. The surface of Cu oxide films changed from hydrophilic to hydrophobic as the annealing temperature increased. This phenomenon is due to the increase of the surface roughness. The direct optical band gap was also obtained and laid in the range between 2.36 and 3.06 eV.

Signal Integrity Analysis of High Speed Interconnects In PCB Embedded with EBG Structures

  • Sindhadevi, M.;Kanagasabai, Malathi;Arun, Henridass;Shrivastav, A. K.
    • Journal of Electrical Engineering and Technology
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    • 제11권1호
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    • pp.175-183
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    • 2016
  • This paper brings out a novel method for reducing Near end and Far end Crosstalk using Electromagnetic Band Gap structures (EBG) in High Speed RF transmission lines. This work becomes useful in high speed closely spaced Printed Circuit Board (PCB) traces connected to multi core processors. By using this method, reduction of −40dB in Near-End Crosstalk (NEXT) and −60 dB in Far End Crosstalk (FEXT) is achieved. The results are validated through experimental measurements. Time domain analysis is performed to validate the signal integrity property of coupled transmission lines.

커플링 급전을 이용한 이중 모드 Annular Ring 안테나 설계 (Design of a Dual-mode Annular Ring Antenna with a Coupling Feed)

  • 김재희;우대웅;박위상
    • 한국전자파학회논문지
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    • 제20권4호
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    • pp.351-356
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    • 2009
  • 본 논문에서는 GPS와 위성 DMB에 사용할 수 있는 이중 모드 annular ring 패치 안테나를 제안하였다. 제안된 안테나는 커플링 급전과 annular ring 패치의 네 개의 슬롯을 특징으로 한다. 급전 선로와 패치 사이의 간격은 입력 임피던스를 조절하는 역할을 하고, 패치의 슬롯의 길이는 DMB 주파수에 해당하는 $TM_{21}$ 모드의 공진 주파수를 조절하는 역할을 한다. 제안된 안테나를 제작 및 측정을 하였다. 제작된 안테나는 GPS와 DMB 주파수에서 만족할만한 대역폭을 가지고 공진을 일으키며, GPS 대역에서는 broadside 방사 패턴을 가지고 DCS 대역에서는 코니컬 빔 방사 패턴을 가진다.

가시광 수소생산용 CdSe/ZnO nanorod 투명전극 (CdSe Sensitized ZnO Nanorods on FTO Glass for Hydrogen Production under Visible Light Irradiation)

  • 김현;양비룡
    • 한국수소및신에너지학회논문집
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    • 제24권2호
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    • pp.107-112
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    • 2013
  • The ZnO is able to produce hydrogen from water however it can only absorb ultraviolet region due to its 3.37eV of wide band gap. Therefore efficiency of solar hydrogen production is low. In this work we report investigation results of improved visible light photo-catalytic properties of CdSe quantum dots(QDs) sensitized ZnO nanorod heterostructures. Hydrothermally vertically grown ZnO nanorod arrays on FTO glass were sensitized with CdSe by using SILAR(successive ionic layer adsorption and reaction) method. Morphology of grown ZnO and CdSe sensitized ZnO nanorods had been investigated by FE-SEM that shows length of $2.0{\mu}m$, diameter of 120~150nm nanorod respectively. Photocatalytic measurements revealed that heterostructured samples show improved photocurrent density under the visible light illumination. Improved visible light performance of the heterostructures is resulting from narrow band gap of the CdSe and its favorable conduction band positions relative to potentials of ZnO band and water redox reaction.