• Nuclear Engineering and Technology
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• 제54권12호
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• pp.4708-4714
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• 2022

The novelty in the present search, the Soda-Lime-Silica (SLS) glass waste to prepare free lead glass shielding was used in order to limit the accumulation of glass waste, which requires extensive time to decompose. This also saves on the consumption of pure SiO₂, which is a finite resource. Furthermore, the combining of BaO with Bi₂O₃ into a glass network leads to increased optical properties and improved attenuation. The UV-Visible Spectrophotometer was used to investigate the optical properties and the radiation shielding properties were reported for current glass samples utilizing the PhysX/PDS online software. The optical property results indicate that when BaO content increases in glass structure, the Urbach energy ΔE, and refractive index n increases while the energy optical band gap E_opt decreases. The result of the metallisation criteria (M) revealed that the present glass samples are nonmetallic (insulators). Furthermore, the radiation shielding parameter findings suggest that when BaO was increased in the glass structure, the linear attenuation coefficient and effective atomic number (Z_eff) rose. But the half-value layer HVL declined as the BaO concentration grew. According to the research, the glass samples are non-toxic, transparent to visible light, and efficient radiation shielding materials. The Ba5 sample is considered the best among all the samples due to its higher attenuation value and lower HVL and MFP values, which make it a suitable candidate as transparent glass shield shielding.

• 한국전기전자재료학회논문지
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• 제36권2호
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• pp.125-128
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• 2023

Recently, as the process of the MOS device becomes more detailed, and the degree of integration thereof increases, many problems such as leakage current due to an increase in electron tunneling due to the thickness of SiO₂ used as a gate oxide have occurred. In order to overcome the limitation of SiO₂, many studies have been conducted on HfO₂ that has a thermodynamic stability with silicon during processing, has a higher dielectric constant than SiO₂, and has an appropriate band gap. In this study, HfO₂, which is attracting attention in various fields, was doped with Al and the change in properties according to its concentration was studied. Al-doped HfO₂ thin film was deposited using Plasma Enhanced Atomic Layer Deposition (PEALD), and the structural and electrical characteristics of the fabricated MIM device were evaluated. The results of this study are expected to make an essential cornerstone in the future field of next-generation semiconductor device materials.

• 한국재료학회지
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• 제32권3호
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• pp.132-138
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• 2022

Zintl phase Mg₃Sb₂ is a promising thermoelectric material in medium to high temperature range due to its low band gap energy and characteristic electron-crystal phonon-glass behavior. P-type Mg₃Sb₂ has conventionally exhibited lower thermoelectric properties compared to its n-type counterparts, which have poor electrical conductivity. To address these problems, a small amount of Sn doping was considered in this alloy system. P-type Mg₃Sb₂ was synthesized by controlled melting, pulverizing, and subsequent vacuum hot pressing (VHP) method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to investigate phases and microstructure development during the process. Single phase Mg₃Sb₂ was successfully formed when 16 at.% of Mg was excessively added to the system. Nominal compositions of Mg_3.8Sb_2-xSn_x (0 ≤ x ≤ 0.008) were considered in this study. Thermoelectric properties were evaluated in terms of Seebeck coefficient, electrical conductivity, and thermal conductivity. A peak ZT value ≈ 0.32 was found for the specimen Mg_3.8Sb_1.994Sn_0.006 at 873 K, showing an improved ZT value compared to intrinsic one. Transport properties were also evaluated and discussed.

• Current Photovoltaic Research
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• 제11권2호
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• pp.39-43
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• 2023

Carrier-selective contacts (CSCs) solar cells are considerably attractive on highly efficient crystalline silicon heterojunction (SHJ) solar cells due to their advantages of high thermal tolerance and the simple fabrication process. CSCs solar cells require a hole selective contact (HSC) layer that selectively collects only holes. In order to selectively collect holes, it must have a work function characteristic of 5.0 eV or more when contacted with n-type Si. The VO_x, NiO_x, and CuI_x thin films were fabricated and analyzed respectively to confirm their potential usage as a hole-selective contact (HSC) layer. All thin films showed characteristics of band-gap engergy > 3.0 eV, work function > 5.0 eV and minority carrier lifetime > 1.5 ms.

• 문화기술의 융합
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• 제9권4호
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• pp.503-508
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• 2023

트립탄 유도체는 급성 편두통을 치료하는 물질로 크로마토그래피, 전기화학, 분광학 및 모세관 전기영동학 등의 분석법과 관련된 연구가 많이 진행되었다. 최근 분석화학자들의 약물 분석과 생물학적 중요성에 대한 근본적인 문제 해결에 더욱 관심이 깊어지고 있다. 따라서 본 연구에서는 트립탄 유도체의 분자단위 수준의 구조적 특성을 알아보기 위하여 HyperChem8.0의 반경험적 PM3 방법을 이용하여 수마트립탄, 리자트립탄, 나라트립탄 그리고 엘레트립탄의 전체에너지, 밴드갭, 정전포텐셜, 전하량을 계산하여 각 유도체의 분자 구조적 변화에 따른 화학적 특성을 조사하였다. 본 연구의 결과 수마트립탄, 나라트립탄 그리고 엘레트립탄의 경우 황 원자에 결합된 산소와 질소 원자를 중심으로 화학작용이 진행될 것으로 예상된다. 또한, 황원자가 없는 리자트립탄의 경우는 5원헤테로 고리화합물의 17, 19번 질소에서 화학작용이 진행될 것으로 나타났다.

• 산업경영시스템학회지
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• 제46권3호
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• pp.59-68
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• 2023

Currently, yellow phosphor of Y3Al5O12:Ce3+ (YAG:Ce) fluorescent material is applied to a 450~480nm blue LED light source to implement a white LED device and it has a simple structure, can obtain sufficient luminance, and is economical. However, in this method, in terms of spectrum analysis, it is difficult to mass-produce white LEDs having the same color coordinates due to color separation cause by the wide wavelength gap between blue and yellow band. There is a disadvantage that it is difficult to control optical properties such as color stability and color rendering. In addition, this method does not emit purple light in the range of 380 to 420nm, so it is white without purple color that can not implement the spectrum of the entire visible light spectrum as like sunlight. Because of this, it is difficult to implement a color rendering index(CRI) of 90 or higher, and natural light characteristics such as sunlight can not be expected. For this, need for a method of implementing sunlight with one LED by using a method of combining phosphors with one light source, rather than a method of combining red, blue, and yellow LEDs. Using this method, the characteristics of an artificial sunlight LED device with a spectrum similar to that of sunlight were demonstrated by implementing LED devices of various color temperatures with high color rendering by injecting phosphors into a 405nm deep blue LED light source. In order to find the spectrum closest to sunlight, different combinations of phosphors were repeatedly fabricated and tested. In addition, reliability and mass productivity were verified through temperature and humidity tests and ink penetration tests.

• 한국재료학회지
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• 제33권11호
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• pp.491-496
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• 2023

As the demand for p-type semiconductors increases, much effort is being put into developing new p-type materials. This demand has led to the development of novel new p-type semiconductors that go beyond existing p-type semiconductors. Copper iodide (CuI) has recently received much attention due to its wide band gap, excellent optical and electrical properties, and low temperature synthesis. However, there are limits to its use as a semiconductor material for thin film transistor devices due to the uncontrolled generation of copper vacancies and excessive hole doping. In this work, p-type CuI semiconductors were fabricated using the chemical vapor deposition (CVD) process for thin-film transistor (TFT) applications. The vacuum process has advantages over conventional solution processes, including conformal coating, large area uniformity, easy thickness control and so on. CuI thin films were fabricated at various deposition temperatures from 150 to 250 ℃ The surface roughness root mean square (RMS) value, which is related to carrier transport, decreases with increasing deposition temperature. Hall effect measurements showed that all fabricated CuI films had p-type behavior and that the Hall mobility decreased with increasing deposition temperature. The CuI TFTs showed no clear on/off because of the high concentration of carriers. By adopting a Zn capping layer, carrier concentrations decreased, leading to clear on and off behavior. Finally, stability tests of the PBS and NBS showed a threshold voltage shift within ±1 V.

• 한국전기전자재료학회논문지
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• 제36권6호
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• pp.582-587
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• 2023

The effects of the annealing temperature on the structural, morphological, and luminescent properties of SrWO₄:Sm³⁺ thin films grown on quartz substrates by radio-frequency magnetron sputtering were investigated. The thin films were annealed at various annealing temperatures for 20 min in a rapid thermal annealer after growing the thin films. The experimental results showed that the annealing temperature has a significant effect on the properties of the SrWO₄:Sm³⁺ thin films. The crystal structure of the as-grown SrWO₄:Sm³⁺ thin films was transformed from amorphous to crystalline after annealing at 800℃. The preferred orientation along (112) plane and a significant increase in average grain size by 820 nm were observed with increasing the annealing temperature. The average optical transmittance in the wavelength range of 500~1,100 nm was decreased from 72.0% at 800℃ to 44.2% at an annealing temperature of 1,000℃, where the highest value in the photoluminescence intensity was obtained. In addition to the red-shift of absorption edge, a higher annealing temperature caused the optical band gap energy of the SrWO₄:Sm³⁺ thin films to fall rapidly. These results suggest that the structural, morphological, and luminescent properties of SrWO₄:Sm³⁺ thin films can be controlled by varying annealing temperature.

• 한국전자통신학회논문지
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• 제18권6호
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• pp.1067-1072
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• 2023

본 연구에서는 본 연구에서는 펄스 레이저 증착법으로 기판온도에 따른 AZO(Al₂O₃ : 3 wt %)박막을 제작하여, 구조적 특성과 전기적 및 광학적 특성을 조사하였다. 기판온도 400℃ 에서 증착한 AZO박막에서 가장 우수한 (002) 배향성을 나타내었으며, 이때의 반가폭은 0.42° 였다. 전기적 특성을 조사한 결과, 기판온도가 상승함에 따라 캐리어 농도와 이동도는 증가하였고 비저항은 감소하였다. 가시광 영역에서의 평균 투과도는 기판온도에 상관없이 85% 이상의 높은 값을 나타내었고, 기판온도에 상승함에 따라 캐리어 농도가 증가하고 이로 인해 에너지 밴드갭이 넓어지는 Burstein-Moss효과도 관찰할 수 있었다. 기판온도 400℃ 에서 증착한 AZO박막의 비저항과 재료평가지수는 각각 6.77 × 10^-4 Ω·cm 과 1.02 × 10⁴ Ω^-1·cm^-1 로 가장 우수한 값을 나타내었다.

• Advances in nano research
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• 제16권1호
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• pp.41-52
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• 2024

In this study, rare-earth orthoferrites LnFeO₃ were synthesized using a facile hydrothermal reaction and their visible-light-induced photo-Fenton degradation of organics was optimized through Ln variation (Ln = La, Pr, or Gd). The morphological, structural, and chemical characteristics of as-prepared samples were examined in detail by using different methods, including XRD, SEM, TEM, XPS, etc. On the other side, under visible light illumination, the photo-Fenton-like catalytic activities of LnFeO₃ were assessed in terms of the removal of selected organic models, i.e., pharmaceuticals (ketoprofen and tetracycline) and dyes (rhodamine B and methyl orange). As compared with PrFeO₃ or GdFeO₃, the sample of LaFeO₃ displayed more structural distortion, larger specific surface area, and narrower band gap, resulting in its higher photo-Fenton-like catalytic activity toward the degradation of organics. In organic-containing solution, in which the initial solution pH = 5, catalyst dosage = 1 g/L and H₂O₂ concentration = 10 mM, 98.2% of rhodamine B, 31.1% of methyl orange, 67.7% of ketoprofen, or 96.4% of tetracycline was removed after 90-min exposure to simulated visible light. Our findings revealed that variation of Ln site on rare-earth orthoferrites was an effective strategy for optimizing their organic removal via visible-light-induced photo-Fenton reaction.