• Journal of Applied Biological Chemistry
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• v.63 no.4
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• pp.387-392
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• 2020

Pseudomonas tolaasii is a pathogen causing brown blotch disease in cultivated mushrooms. In previous study, various strains of P. tolaasii were isolated from the mushrooms with disease symptoms and they were further divided into Ptα, Ptβ, and Ptγ subtypes according to the 16S rRNA gene analysis. To investigate the secretion of peptide toxins, tolaasin and its analog peptides, culture extracts of Pt group strains were analyzed by gel permeation chromatography. Those of Ptα subtype strains contained two chromatographic peaks, band A and B. Meanwhile, those of Ptβ and Ptγ subtype strains contained mainly band A component and a little of band B. Molecular weights of toxic peptides of culture extracts were measured by MALDI-TOF mass spectrometry. In Ptα subtype strains, the peptide compositions of band A and B were same including tolaasin I (1,987 Da), tolaasin II (1,943 Da), and its two analog peptides, 1,973 Da and 2,005 Da. The strains of Ptβ and Ptγ subtype secreted many components of MW 1,100-1,200 Da, but they did not synthesize any tolaasin-like peptides. These results suggest that the only Ptα subtype strains secrete tolaasin and its analog peptide toxins and the strains of Ptβ and Ptγ subtypes have different pathogenic characters causing brown blotch disease.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.541-544
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• 1998

A SiGe p-channel MESFET using $\delta-doped$ layers is designed and the considerable enhancement of the current driving capability of the device is observed from the result of simulation. The channel consists of double $\delta-doped$ layers separated by a low-doped spacer which consists of Si and SiGe. A quantum well is formed in the valence band of the Si/SiGe heterojunction and much more holes are accumulated in the SiGe spacer than those in the Si spacer. The saturation current is enhanced by the contribution of the holes inthe spacer. Among the design parameters that affect the performance of the device, the thickness of the SiGe layer and the Ge composition are studied. The thickness of $0~300\AA$ and the Ge composition of 0~30% are investigated, and the saturation current is observed to be increased by 45% compared with a double $\delta-doped$ Si p-channel MESFET.

• Journal of Powder Materials
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• v.19 no.6
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• pp.442-445
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• 2012

The quantum dots (QD) have unique electrical and optical properties due to quantum dot confinement effect. The optical properties of QDs are decided by various synthesis conditions. In a prior QDs study, a study on the QDs size with synthesis condition such as synthesis time and temperature is being extensively researched. However, the research on QDs size with composition ratio has hitherto received scant attention. In order to evaluate the ratio dependence of CdSe crystal, synthesis ratio of Se precursor is changed from 16.7 mol%Se to 44 mol%Se. As the increasing Se ratio, the band gap was increased. This is caused by red shift of emission. We confirmed optical property of CdSe QDs with composition ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.248-252
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• 1995

In this paper, the samples are made by the new three-composition seed grain method, in order to obtain the low voltage varistor distributed randomly large seed grain in its bulk. The oscillation phenomena of carriers appeared from current-voltage characteristics under knee voltage is shown by the transient flow of non trapped carriers group in the trap level of intergranular layer, surface state and/or depletion layer. Current oscillation phenomena is hardly shown in the high electric field. The injected carriers from both electrodes are directly flowed from the conduction band of forward biased grain through the intergranular layer into the reverse biased grain, because the trap level in the electric field above the knee voltage is mostly filled.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.216-216
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• 2010

ITO는 n- type 반도체 재료로 Sn의 첨가로 인한 매우 낮은 전기저항과 안정성때문에 널리 사용되고 있는 재료이며 비교적 높은 band gap(3.55Ev)를 가짐으로 인하여 가시광선 영역에서 높은 투과도를 가지는 특징이 있다. 단점으로는 박막 제조 시에 증착시간의 증가함에 따라 음이온 충격 및 온도 상공으로 인한 막의 표면손상이 발생하게 되고 이것은 전기저항이 증가하는 요인으로 작용하는 문제점이 있다. 본 연구에서는 3가지 조성의 ITO박막을 스퍼터 장치를 이용하여 증착하고 그에 따른 전기적, 구조적, 광학적 특성을 분석 하였다. 증착된 ITO성막의 표면분석을 위해 AFM (Atomic Force Microscope)으로 표면 거칠기값 분석, XRD (X-ray diffraction)을 이용 결정성장분석, SEM (Scanning Electron Microscope)으로 표면의 미세구조관찰, 4Point pobe로 면 저항분석, spectrophotometer로 박막의 투과율과 흡수율을 분석하였다. 조성변화와 공정변수에 따른 전기적, 구조적, 광학적 특성변화의 원인분석으로 고효율의 ITO 박막성장 가능성을 조사하였다.

• Bulletin of the Korean Chemical Society
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• v.29 no.5
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• pp.939-942
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• 2008

Photoelectrochemical deposition of CdZnSe thin films on the Se-modified Au electrode using electrochemical quartz crystal microgravimetry (EQCM) and voltammetry is described. Corrosion of pre-deposited Se electrodes by illumination at a fixed potential resulted in $Se^{2-}$ species, which was manifest from the EQCM frequency changes. $Se^{2-}$ species generated from the photocorrosion reacted with $Cd^{2+}$ and $Zn^{2+}$ ions in the electrolyte to form CdZnSe films on the Au electrode. The effect of electrolyte composition on the composition and band gap of CdZnSe films was studied in detail. Also, photoelectrochemistry, EDX, Raman spectroscopy were used for the characterization of CdZnSe thin films.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.1019-1026
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• 1996

In this study, we may be presented the carrier oscillation properties for the low-voltage varistor fabricated by a new method of three composition seed grain, in order to analyze the behavior of carriers at the its equivalent circuit model. The oscillation phenomena of carriers appeared from current-voltage characteristics under knee voltage is shown by the transient flow of nontrapped carriers group in the trap level of intergranular layer, surface state and/or depletion layer. In particularly, current oscillation phenomena is hardly shown in the high electric field. It is that the injected carriers from both electrodes are directly from the conduction band of forward biased ZnO grain through the intergranular layer into the reverse biased ZnO grain, because the trap level in the electric field above the knee voltage is mostly filled.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1159-1161
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• 1993

This paper may be presented the carrier oscillation properties for the varistor fabricated by a new method of three-composition seed grain, in order to analyze the behavior of carriers at the its equivalent circuit model. The oscillation phenomena of carriers appeared from current-voltage characteristics under knee voltage is shown by the transient flow of non trapped carriers group in the trap level of intergranular layer, surface state and/or depletion layer. However, Current oscillation phenomena is hardly shown in the high electric field. The injected carriers from both electrodes are directly flowed from the conduction band of forward biased grain through the intergranular layer into the reverse biased grain, because the trap level in the electric field above the knee voltage is mostly filled.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.805-809
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• 1995

In order to widen the band-width of ferrite absorber, compositional effect on the complex permeability of Ni-Zn ferrite and the structure of grid absorber were studied. From the experimental results, we could determine the optimum composition composition of Ni-Zn ferrite and the structure of grid absorber. Also, we manufactured grid absorber and investigated its microwave absorbing characteristics. Calculation shows that the ferrite frid absorber suppresses reflection ${\leq}-20dB$ from 30 MHz to 700 MHz and the conventional ferrite tile absorber suppresses reflection ${\leq}20dB$ in the frequency range of 30 MHz-400 MHz. It was found that the microwave absorbing performance of the ferrite grid absorber was superior to the ferrite tile absorber.

• Journal of Plant Biology
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• v.39 no.3
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• pp.203-207
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• 1996

On the basis of karyotypic analysis performed by conventional staining and Giemas C-banding technique, cytological relationship was inferred for 21 lines of Paeonia lactiflora Pal. cultivated in Korea. It was very difficult to infer their organized karyotypic classification system using the composition of somatic chromosomes involving sat-chromosomes, relative length of chromosomes, arm ratio and karyotypic formulae by conventional staining. From the distribution and number of Giemsa C-bands on the chromosomes b and c, 21 lines can be subclassified into 5 groups. It seems that the karyotypic polymorphism is observed in 21 lines of cultivated P. lactiflora because peony mainly propagates by outbreeding.