• Title/Summary/Keyword: backplane

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A commercial-ready, high resolution AMOLED mobile display with amorphous silicon backplane

  • Church, Corbin;Chaji, Reza;Alexander, Stefan;Nathan, Arokia
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.1001-1004
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    • 2008
  • An advanced backplane circuit technology for AMOLED using amorphous silicon TFTs with commercial level reliability, uniformity and lifetime was recently integrated into a prototype device. Differential aging of T98>100 hrs at 200 cd/m2 brightness and >10,000hrs lifetime is demonstrated. A 2.2" QVGA ($240{\times}320$) prototype has been developed and shown having the above-mentioned high performance.

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Fabrication of OTFT-backplane with solution process for Electrophoretic Display panel

  • Lee, Myung-Won;Lee, Mi-Young;Park, Jong-Seung;Song, Chung-Kun
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.428-430
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    • 2009
  • We fabricated flexible OTFT-backplanes with combining printing technique and conventional photolithography process for the electrophoretic display(EPD). The active area size of backplane was 6" in diagonal direction and consisted of $192{\times}150$ pixels, containing 1 OTFT employed bottom contact structure and 1 capacitance in each pixel.

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Invited Paper: Oxide Thin Film Transistors for Use as Next Generation Active Matrix Backplanes

  • Kim, Hye-Dong;Park, Jin-Seong;Mo, Yeon-Gon;Kim, Sang-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.35-37
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    • 2009
  • In this work, we introduce new next generation activematrix backplane technologies for large-size AMOLED displays. Among the general requirements for successful market launch of AMOLED TVs, backplane issues are discussed. It will be shown that the amorphous oxide TFT is most suitable due to large scalability and superior cost effectiveness. Development status and current challenges of amorphous oxide TFTs are discussed.

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OLED 디스플레이 제작을 위한 Joule 유도 결정화 공정에서의 유리기판에 대한 열해석 (Thermal Analysis on Glass Backplane of OLED Displays During Joule Induced Crystallization Process)

  • 김동현;박승호;홍원의;정장균;노재상;이성혁
    • 대한기계학회논문집B
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    • 제33권10호
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    • pp.797-802
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    • 2009
  • Large area crystallization of amorphous silicon thin-films on glass substrates is one of key technologies in manufacturing flat displays. Among various crystallization technologies, the Joule induced crystallization (JIC) is considered as the highly promising one in the OLED fabrication industries, since the amorphous silicon films on the glass can be crystallized within tens of microseconds, minimizing the thermally and structurally harmful influence on the glass. In the JIC process the metallic layers can be utilized to heat up the amorphous silicon thin films beyond the melting temperatures of silicon and can be fabricated as electrodes in OLED devices during the subsequent processes. This numerical study investigates the heating mechanisms during the JIC process and estimates the deformation of the glass substrate. Based on the thermal analysis, we can understand the temporal and spatial temperature fields of the backplane and its warping phenomena.

HSTL을 이용한 전송선로에서의 데이터 전송특성 시뮬레이션 (Data Transmission Specific Simulation of Transmission Line using HSTL)

  • 김석환;허창우
    • 한국정보통신학회논문지
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    • 제15권8호
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    • pp.1777-1781
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    • 2011
  • 본 연구는 통신 시스템 설계 시 백플레인 (Backplane)에서 HSTL (High-Speed Transceiver Logic)의 데이터 전송 및 수신 특성을 HSPICE를 사용하여 시뮬레이션을 수행하고 FPGA에 실제 구현하여 데이터 전송특성 분석하여 시뮬레이션 결과 비교 설명 하였다. 시뮬레이션과 측정 조건은 point to point 배선 길이에 대해 데이터 전송 특성을 가능한 데이터 전송 및 수신 한계 속도에 대해 검토 하였다. 측정 결과 point to point 접속 신호 전송 및 수신 한계속도에 영향을 주는 요인은 배선 길이와 주변 전기적 잡음이 매우 중요한 역할을 함을 알 수 있었다.