• Journal of Welding and Joining
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• v.29 no.6
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• pp.77-81
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• 2011

In most industry, manual GTAW welding is preferred for formation of stable back bead in root weld of butt joint. However, manual GTAW welding has low productivity as compared with GMAW, also it has unstable bead quality which depend on skilled workers. So it is necessary to develop process of root pass welding by using automation GMAW that have stable back bead formation and high productivity. In this paper, the design of U-groove with 3mm root face was applied to extend the tolerance of misalignment in condition of standard root gap 1.5mm. Consequently, for the formation of stable back bead in root pass of butt welding, in case of the narrow root gap(0.5mm) the large arc force was applied by increasing the current and voltage. In case of the large root gap(2.5mm), the small arc force was applied by decreasing the current and voltage. Considering the various root gap, the required deposited metal was controlled by welding speed only.

• Journal of Welding and Joining
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• v.28 no.5
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• pp.86-92
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• 2010

In GMAW processes, bead geometry is a criterion to estimate welding quality. Bead geometry is affected by welding current, arc voltage, welding speed, shielding gas and so on. Thus the welding condition has to be selected carefully. In this paper, an experimental method for the selection of optimal welding condition was proposed in the root pass welding which was done along the GMA V-grooved butt weld joint. This method uses the response surface analysis in which the width and height of back bead were chosen as the quality variables of the weld. The overall desirability function, which is the combined desirability function for the two quality variables, was used as the objective function for getting the optimal welding condition. Through the experiments, the target values of the back bead width and the height were chosen as 4mm and 1mm respectively for the V-grooved butt weld joint. From a series of welding test, it was revealed that a uniform weld bead can be obtained by adopting the optimal welding condition which was determined according to the method proposed.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.8 no.1
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• pp.146-154
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• 1998

This study was designed to investigate the workers' exposure level to electromagnetic field(EMF) in accordance with the VDT arrangement in the work place and distance from VDT. Author compared the exposure strength of EMF in line group(workers exposed to EMF from both front and back side) and in shielding group(workers exposed to EMF exclusively from front side). The levels of EMF at 30cm and 50cm from front side and at 30cm from back side of VDT were also measured. The result were as follows: 1. Mean distance between a monitor and a worker in shielding group ($47.7{\pm}8.7cm$) significantly longer than that in line group($44.3{\pm}7.2cm$). Strength of EMF in shielding group [$1.3{\pm}0.7V/m$ (electric field) and $18.2{\pm}11.5mA/m$ (magnetic field) were lower than in line group [$1.4{\pm}0.6V/m$ and $26.6{\pm}11.6mA/m$, respectively] at the workers' position. 2. The strength of EMF was decreased with the distance from VDT. The strength at 70cm from VDT was nearly the same as the background strength in the ordinary office rooms. 3. Working distance from 9 inch monitor was significantly shorter than that from 14 inch and wider sized monitors. 4. The strength of EMF in extremely low frequency spectrum of color monitors was higher then that of black and white monitor. 5. Metal coated filters significantly decreased the electric field strength of EMF when earth line was connected. Metallic shield was effectively decreased the EMF strength from VDT, but wooden shield was not. From the above results, line type arrangement of VDT in the work place using metallic shield at the back side of VDT, and metal coated filter to monitor with application of earth line were recommended. It is also recommended to maintain workers position to be 60cm or more distance from monitor and 140cm or more between VDTs for minimizing workers' exposure to EMF.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1277-1279
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• 1994

In the structure of ZnO/nip-SiC: H/metal substrate amorphous silicon (a-Si:H) solar cells, the effects of inserting a rear textured ZnO in the p-SiC:H/metal interface and a graded bandgap buffer layer in the i/p-SiC:H have been analysed by computer simulation. The incident light was taken to have an intensity of $100mW/cm^2$(AM-1). The thickness of the a-Si:H n, ${\delta}$-doped a-SiC:H p, and buffer layers was assumed to be $200{\AA},\;66{\AA}$, and $80{\AA}$, respectively. The scattering coefficients of the front and back ZnO were taken to be 0.2 and 0.7, respectively. Inserting the rear buffer layer significantly increases the open circuit voltage($V_{oc}$) due to reduction of the i/p interface recombination rate. The use of textured ZnO markedly improves collection efficiency in the long wavelengths( above ${\sim}550nm$ ) by back scattering and light confinement effects, resulting in dramatic enhancement of the short circuit current density($J_{sc}$). By using the rear buffer and textured ZnO, the i-layer thickness of the ceil for obtaining the maximum efficiency becomes thinner(${\sim}2500{\AA}$). From these results, it is concluded that the use of textured ZnO and buffer layer at the backside of the ceil is very effective for enhancing the conversion efficiency and reducing the degradation of a-Si:H pin-type solar cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.334-334
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• 2013

In the past decade, the infrared detectors based on intersubband transition in quantum dots (QDs) have attracted much attention due to lower dark currents and increased lifetimes, which are in turn due a three-dimensional confinement and a reduction of scattering, respectively. In parallel, focal plane array development for infrared imaging has proceeded from the first to third generations (linear arrays, 2D arrays for staring systems, and large format with enhanced capabilities, respectively). For a step further towards the next generation of FPAs, it is envisioned that a two-dimensional metal hole array (2D-MHA) structures will improve the FPA structure by enhancing the coupling to photodetectors via local field engineering, and will enable wavelength filtering. In regard to the improved performance at certain wavelengths, it is worth pointing out the structural difference between previous 2D-MHA integrated front-illuminated single pixel devices and back-illuminated devices. Apart from the pixel linear dimension, it is a distinct difference that there is a metal cladding (composed of a number of metals for ohmic contact and the read-out integrated circuit hybridization) in the FPA between the heavily doped gallium arsenide used as the contact layer and the ROIC; on the contrary, the front-illuminated single pixel device consists of two heavily doped contact layers separated by the QD-absorber on a semi-infinite GaAs substrate. This paper is focused on analyzing the impact of a two dimensional metal hole array structure integrated to the back-illuminated quantum dots-in-a-well (DWELL) infrared photodetectors. The metal hole array consisting of subwavelength-circular holes penetrating gold layer (2DAu-CHA) provides the enhanced responsivity of DWELL infrared photodetector at certain wavelengths. The performance of 2D-Au-CHA is investigated by calculating the absorption of active layer in the DWELL structure using a finite integration technique. Simulation results show the enhanced electric fields (thereby increasing the absorption in the active layer) resulting from a surface plasmon, a guided mode, and Fabry-Perot resonances. Simulation method accomplished in this paper provides a generalized approach to optimize the design of any type of couplers integrated to infrared photodetectors.

• Korean Journal of Materials Research
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• v.27 no.2
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• pp.107-112
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• 2017

The BCBJ (Back Contact and Back Junction) or back-lit solar cell design eliminates shading loss by placing the pn junction and metal electrode contacts all on one side that faces away from the sun. However, as the electron-hole generation sites now are located very far from the pn junction, loss by minority-carrier recombination can be a significant issue. Utilizing Medici, a 2-dimensional semiconductor device simulation tool, the interdependency between the substrate thickness and the minority-carrier recombination lifetime was studied in terms of how these factors affect the solar cell power output. Qualitatively speaking, the results indicate that a very high quality substrate with a long recombination lifetime is needed to maintain the maximum power generation. The quantitative value of the recombination lifetime of minority-carriers, i.e., electrons in p-type substrates, required in the BCBJ cell is about one order of magnitude longer than that in the front-lit cell, i.e., $5{\times}10^{-4}sec$ vs. $5{\times}10^{-5}sec$. Regardless of substrate thickness up to $150{\mu}m$, the power output in the BCBJ cell stays at nearly the maximum value of about $1.8{\times}10^{-2}W{\cdot}cm^{-2}$, or $18mW{\cdot}cm^{-2}$, as long as the recombination lifetime is $5{\times}10^{-4}s$ or longer. The output power, however, declines steeply to as low as $10mW{\cdot}cm^{-2}$ when the recombination lifetime becomes significantly shorter than $5{\times}10^{-4}sec$. Substrate thinning is found to be not as effective as in the front-lit case in stemming the decline in the output power. In view of these results, for BCBJ applications, the substrate needs to be only mono-crystalline Si of very high quality. This bars the use of poly-crystalline Si, which is gaining wider acceptance in standard front-lit solar cells.

• Nuclear Engineering and Technology
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• v.41 no.8
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• pp.1101-1108
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• 2009

The ocean contains around eighty elements of the periodic table and uranium is also one among them, with a uniform concentration of 3.3 ppb and a relative abundance factor of 23. With a large coastline, India has a large stake in exploiting the 4 billion tonnes of uranium locked in seawater. The development of radiation grafting techniques, which are useful in incorporating the required functional groups, has led to more efficient adsorbent preparations in various geometrical configurations. Separation based on a polymeric adsorbent is becoming an increasingly popular technique for the extraction of trace heavy metals from seawater. Radiation grafting has provided definite advantages over chemical grafting. Studies related to thermally bonded non woven porous polypropylene fiber sheet substrate characterization and parameters to incorporate specific groups such as acrylonitrile (AN) into polymer back bones have been investigated. The grafted polyacrylonitrile chains were chemically modified to convert acrylonitrile group into an amidoxime group, a chelating group responsible for heavy metal uptake from seawater/brine. The present work has been undertaken to concentrate heavy metal ions from lean solutions from constant potential sources only. A scheme was designed and developed for investigation of the recovery of heavy metal ions such as uranium and vanadium from seawater.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.454-457
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• 1997

The purpose of this study is to develop an optimal model, using existing models, that is able to estimate the amount of spatter utilizing artificial neural network in the short circuit transfer mode of gas metal arc (GMA) welding. The amount of spatter generated during welding can become a barometer which represents the process stability of metal transfer in GMA welding, and it depends on some factors which constitute a periodic waveforms of welding current and arc voltage in short circuit GMA welding. So, the 12 factors, which could express the characteristics for the waveforms, and the amount of spatter are used as input and output variables of the neural network, respectively. Two neural network models to estimate the amount of spatter are proposed: A neural network model, where arc extinction is not considered, and a combined neural network model where it is considered. In order to reduce the calculation time it take to produce an output, the input vector and hidden layers for each model are optimized using the correlation coefficients between each factor and the amount of spattcr. The est~mation performance of each optimized model to the amount of spatter IS assessed and compared to the est~mation performance of the model proposed by Kang. Also, through the evaluation for the estimation performance of each optimized model, it is shown that the combined neural network model can almost perfectly predict the amount of spatter.

• Korean Journal of Materials Research
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• v.15 no.7
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• pp.458-464
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• 2005

In microelectronics packaging, the reliability of the metal/polymer interfaces is an important issue because the adhesion strength between dissimilar materials is often inherently poor. The modification of polymer surfaces by ion beam irradiation and rf plasma is commonly used to enhance the adhesion strength of the interface. T-peel strengths were measured using a Cu/polyimide system under varying $N_2^+$ ion beam irradiation conditions for pretreatment. The measured T-peel strength showed reversed camel back shape regarding the fixed metal-layer thickness, which was quite different from the results of the 90° peel test. The elementary analysis suggests that the variation of the T-peel strength is a combined outcome of the plastic bending work of the metal and polymer strips. The results indicate that the peel strength increases with $N_2^+$ ion beam irradiation energy at the fixed metal-layer thickness.

• Korean Journal of Materials Research
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• v.15 no.1
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• pp.42-46
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• 2005

In microelectronics packaging, the reliability of the metal/polymer interfaces is an important issue because the adhesion strength between dissimilar materials is often inherently poor. The modification of polymer sufaces by ion beam irradiation and rf plasma are commonly used to enhance the adhesion strength of the interface. T-peel strengths were measured using a Cu/polyimide system under varying $Ar^+$ ion beam irradiation pretreatment conditions. The measured T-peel strength showed reversed camel back shape regarding the fixed metal-layer thickness, which was quite different from the results of the $90^{\circ}$ peel test. The elementary analysis suggests that the variation of the T-peel strength is a combined outcome of the plastic bending work of the metal and polymer strips. The results indicate that the peel strength increases with $Ar^+$ ion beam irradiation energy at the fixed metal-layer thickness.